CN117604495B - Vapor deposition equipment - Google Patents
Vapor deposition equipment Download PDFInfo
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- CN117604495B CN117604495B CN202410096477.8A CN202410096477A CN117604495B CN 117604495 B CN117604495 B CN 117604495B CN 202410096477 A CN202410096477 A CN 202410096477A CN 117604495 B CN117604495 B CN 117604495B
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- purge
- gas
- vapor deposition
- injection mechanism
- reaction
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 66
- 238000010926 purge Methods 0.000 claims abstract description 285
- 238000006243 chemical reaction Methods 0.000 claims abstract description 178
- 230000007246 mechanism Effects 0.000 claims abstract description 136
- 238000002347 injection Methods 0.000 claims abstract description 118
- 239000007924 injection Substances 0.000 claims abstract description 118
- 238000005192 partition Methods 0.000 claims abstract description 66
- 230000001965 increasing effect Effects 0.000 claims abstract description 17
- 238000000926 separation method Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 319
- 230000000903 blocking effect Effects 0.000 claims description 24
- 239000012495 reaction gas Substances 0.000 claims description 14
- 238000004891 communication Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 230000001105 regulatory effect Effects 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 2
- 230000003028 elevating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 7
- 238000012423 maintenance Methods 0.000 abstract description 5
- 239000006227 byproduct Substances 0.000 description 15
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010408 sweeping Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
Abstract
The invention provides vapor deposition equipment, which comprises a reaction cavity; the gas injection mechanism is positioned at the top of the reaction cavity; the bearing plate is positioned in the reaction cavity, and a reaction zone is formed above the bearing plate; the rotating shaft is connected with the bearing disc; the shielding piece is arranged in the reaction cavity and surrounds the inner side wall of the reaction cavity, the shielding piece comprises a separation wall close to one side of the reaction area, the separation wall and the gas injection mechanism are adaptively surrounded into a space area, the space area covers the reaction area, the radial size of the space area is gradually increased from top to bottom, and the outer diameter of the bottommost end of the shielding piece is matched with the inner diameter of the reaction cavity; the purging channels are distributed on the partition wall, penetrate through the partition wall and are communicated with the space area so as to introduce purging gas into the space area. The vapor deposition equipment provided by the invention can improve the output efficiency and quality of the growth materials of the equipment and prolong the maintenance period of the reaction cavity.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to vapor deposition equipment.
Background
Vapor deposition on semiconductor wafers to grow semiconductor thin films is a very important module in semiconductor manufacturing processes. Typical vapor deposition apparatuses mainly include chemical vapor deposition apparatuses, physical vapor deposition apparatuses, plasma-enhanced vapor deposition apparatuses, metal Organic Chemical Vapor Deposition (MOCVD) apparatuses, and the like. Commercially, these devices are used to fabricate solid state (semiconductor) microelectronic, optical and optoelectronic devices, as well as other electronic/optoelectronic materials and devices.
In general, in the vapor deposition process, a susceptor is disposed in a reaction chamber, and a wafer is placed on the susceptor. Process gases are introduced into the reaction chamber through a gas inlet device (e.g., a showerhead) and delivered to the surface of one or more wafers placed on a carrier plate for processing, thereby growing films of a particular crystal structure. Meanwhile, in order to realize uniform deposition, the bearing disc rotates at a high speed under the drive of the rotating shaft. Because the carrier plate drags the gas to rotate, gas flow vortex is easy to generate near the side wall of the reaction zone (namely, near the edge of the carrier plate in the gas inflow direction), and particularly, the gas flow vortex is obvious under the condition of high rotating speed (the rotating speed is more than or equal to 200 RPM) of the carrier plate.
In the presence of a certain vortex of gas, the inner side walls of the reaction chamber may have a relatively severe deposition of reaction byproducts, and even in the absence of a vortex of gas, the inner side walls of the reaction chamber may have a small deposition of reaction byproducts due to diffusion of the reactants. These reaction byproducts can present several problems:
1. the presence of reaction byproducts can become a source of particle defects during the growth of the material, thereby reducing the yield of the grown material.
2. The reaction by-products are generally solid in a polycrystalline or amorphous form, and the reflectivity of the side wall of the reaction zone can change gradually along with the progress of growth, so that the temperature field stability of the reaction zone is affected.
3. The generation and accumulation of reaction byproducts also force the cleaning and maintenance frequency of the reaction cavity to be improved, and the effective growth productivity of the reaction cavity is reduced, thereby increasing the use cost.
Disclosure of Invention
The invention aims to provide vapor deposition equipment, which can improve the output efficiency and quality of equipment growth materials and prolong the maintenance period of a reaction cavity.
To achieve the above object, the present invention provides a vapor deposition apparatus comprising:
a reaction chamber;
the gas injection mechanism is positioned at the top of the reaction cavity;
the bearing plate is positioned in the reaction cavity and is opposite to the gas injection mechanism, and a reaction area is formed above the bearing plate;
the rotating shaft is connected with the bearing disc and drives the bearing disc to rotate during vapor deposition;
the shielding piece is positioned in the reaction cavity and surrounds the inner side wall of the reaction cavity, the shielding piece comprises a separation wall close to one side of the reaction area, the separation wall and the gas injection mechanism are adaptively surrounded to form a space area, the space area covers the reaction area, the radial dimension of the space area is gradually increased from top to bottom, and the outer diameter of the bottommost end of the shielding piece is matched with the inner diameter of the reaction cavity;
The purging channels are distributed on the partition wall, penetrate through the partition wall and are communicated with the space area, so that purging gas is introduced into the space area.
The vapor deposition equipment provided by the invention has the beneficial effects that: through increasing a shielding piece in the reaction chamber inboard, this shielding piece encloses into a radial size with gas injection mechanism adaptation and increases gradually and cover the space region of reaction zone to set up the sweeping channel on the shielding piece, play the sweeping effect, compare and do not set up the vapor deposition equipment of shielding piece, this shielding piece can replace the reaction chamber inside wall to expose in the reaction zone, play the guard action to the reaction chamber inside wall, and its sweeping function can effectively restrain or improve the deposition of reaction accessory substance on the shielding piece moreover, improve the output efficiency and the quality of equipment growth material, prolong the life cycle of shielding piece, thereby prolong the maintenance cycle of reaction chamber.
In some embodiments, the purge channel comprises a vertical purge gas flow channel having a centerline parallel to the axis of the rotating shaft such that the gas flow velocity of the purge gas introduced into the spatial region comprises only an axial component.
In some embodiments, the purge channel further comprises a rotating purge gas flow channel that is inclined circumferentially through the partition wall at an angle β such that the gas flow velocity of the purge gas introduced into the spatial region comprises an axial component and a tangential component, thereby forming a rotating purge gas flow, the rotating purge gas flow channel being circumferentially arranged on the partition wall such that the direction of rotation of the rotating purge gas flow is the same as the direction of rotation of the rotating shaft.
In some embodiments, the angle β of the rotating purge gas flow channel at the lowermost level of the dividing wall is greater than or equal to the angle β of the rotating purge gas flow channel at the uppermost level of the dividing wall, or increases gradually from top to bottom along the dividing wall.
In some embodiments, the rotating purge gas flow channel is located on the shield in a circumferential region proximate to the carrier platter.
In some embodiments, the partition wall includes a first side surface near the inner side wall of the reaction chamber and a second side surface far away from the inner side wall of the reaction chamber, the purge passage penetrates from the first side surface to the second side surface and does not exceed the second side surface, and an inner diameter of an air outlet formed on the second side surface by the purge passage is greater than or equal to an inner diameter of an air inlet formed on the first side surface by the purge passage.
In some embodiments, the shield surrounds the carrier platter and the distribution of the purge passages over the dividing wall is such that: and a purge gas outlet surface formed by the purge channel at the lowest end of the partition wall is not higher than the bearing surface of the bearing plate.
In some embodiments, the distribution of the purge channels over the dividing wall also covers at least a portion of the area encompassed from the gas injection mechanism to the load-bearing surface of the load-bearing disk.
In some embodiments, the shield comprises an annular cavity comprising an outer wall adjacent to the inner side wall of the reaction cavity and an inner wall adjacent to the reaction zone, the inner wall of the annular cavity being formed as the partition wall, the outer wall of the annular cavity being adapted to the inner side wall of the reaction cavity, a purge gas inlet being provided in the annular cavity, the annular cavity being in communication with the purge channel.
In some embodiments, at least one blocking member is arranged on the shielding member, the blocking member is located in the annular cavity, the blocking member divides the annular cavity into a plurality of sub annular cavities, and the purge gas conveyed by at least two sub annular cavities is independently regulated and controlled.
In some embodiments, the barrier is a cylinder coaxial with the outer wall of the annular cavity, an upper end of the barrier abutting an inner top wall of the annular cavity, a lower end of the barrier abutting the partition wall; alternatively, the blocking piece is an annular plate parallel to the top of the annular cavity, the outer edge of the blocking piece abuts against the outer wall of the annular cavity, and the inner edge of the blocking piece abuts against the isolation wall.
In some embodiments, the flow rate of the purge gas delivered in each of the sub-annular chambers is equal, or gradually increases from inside to outside.
In some embodiments, the average molecular weight of the purge gas delivered in each of the sub-annular chambers is equal, or gradually increases from inside to outside.
In some embodiments, the gas injection mechanism comprises a first gas injection mechanism and a second gas injection mechanism, wherein the first gas injection mechanism is positioned in a middle area at the top of the reaction chamber and is used for injecting reaction gas into the reaction chamber; the second gas injection mechanism is located in the peripheral area at the top of the reaction cavity and surrounds the first gas injection mechanism, the annular cavity is located below the second gas injection mechanism, the purge gas inlet is located at the top end of the annular cavity, the gas outlet of the second gas injection mechanism is communicated with the purge gas inlet in an abutting mode and used for conveying purge gas to the annular cavity, and the purge gas enters the annular cavity and is guided into the space area through the purge channel.
In some embodiments, an opening is formed in a side wall of the reaction chamber, the opening is used for placing or taking out the carrying disc, a lifting mechanism is located on the top wall or the bottom wall of the reaction chamber, the lifting mechanism is connected with the shielding piece, and the lifting mechanism drives the shielding piece to move up and down along the axial direction of the rotating shaft, so that the shielding piece shields the opening or exposes the opening.
In some embodiments, when the carrying disc needs to be put in or taken out, the lifting mechanism drives the shielding piece to move downwards along the axial direction of the rotating shaft so as to expose the opening; when vapor deposition is required to be carried out in the reaction cavity, the lifting mechanism drives the shielding piece to move upwards along the axial direction of the rotating shaft, so that the air outlet of the second gas injection mechanism is communicated with the purge gas inlet in an abutting mode, and the opening is shielded by the shielding piece.
In some embodiments, the top end of the annular cavity mates with the second gas injection mechanism.
In some embodiments, the gas outlet face of the first gas injection mechanism is flush with the gas outlet face of the second gas injection mechanism.
In some embodiments, the partition wall includes a straight cylindrical portion at an upper end of uniform radial dimension and a flared portion at a lower end of gradually increasing radial dimension from top to bottom.
In some embodiments, the gas outlet surface of the second gas injection mechanism is higher than the gas outlet surface of the first gas injection mechanism, so that an upward concave step exists between the gas outlet surface of the second gas injection mechanism and the gas outlet surface of the first gas injection mechanism, and the straight barrel portion is adaptively inserted into the upward concave step when vapor deposition is performed in the reaction chamber.
In some embodiments, the purge channels are circumferentially distributed on the partition wall, and a plurality of layers of purge channels are formed along the axial direction of the rotating shaft.
In some embodiments, the purge channels of each layer have the same inner diameter, or the purge channels of each layer have an inner diameter that gradually increases from the top of the reaction chamber to the carrier plate.
In some embodiments, the number of purge channels in each layer is the same, or the number of purge channels in the lowest layer is multiple than the number of purge channels in the uppermost layer in the direction from the top of the reaction chamber to the carrier plate.
Drawings
FIG. 1 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic perspective view of a shield in an oblique top view according to an embodiment of the present invention;
FIG. 3 is a schematic perspective view of another shield in accordance with an embodiment of the present invention from an oblique top view;
FIG. 4 is a cross-sectional view of yet another shield according to an embodiment of the present invention taken along the axial direction thereof;
FIG. 5 is an enlarged view of FIG. 4 at A;
FIG. 6 is a schematic cross-sectional view of another vapor deposition apparatus according to an embodiment of the present invention;
FIG. 7 is a schematic perspective view of a shielding member in a top-down oblique view according to another embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention when the opening of the reaction chamber is closed;
FIG. 9 is a schematic cross-sectional view of another vapor deposition apparatus according to an embodiment of the present invention;
FIG. 10 is a schematic perspective view of a shielding member in a top-down oblique view according to an embodiment of the present invention;
FIG. 11 is an enlarged view at B in FIG. 10;
FIG. 12 is a schematic perspective view of a shield with barrier according to an embodiment of the present invention in a top-down oblique view;
FIG. 13 is a schematic perspective view of another embodiment of a shield with a barrier in a top-down oblique view;
FIG. 14 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention when the opening of the reaction chamber is opened.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.
Example 1
Fig. 1 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention.
Referring to fig. 1, the present embodiment provides a vapor deposition apparatus including a reaction chamber 1, a gas injection mechanism 2, a carrier plate 3, a rotation shaft 4, and a shutter 5. The vapor deposition apparatus may be, for example, a chemical vapor deposition device, a physical vapor deposition device, a plasma enhanced vapor deposition device, a Metal Organic Chemical Vapor Deposition (MOCVD) device, or the like. The cross section of the reaction chamber 1 is generally circular or circular-like in structure. Wherein the gas injection mechanism 2 is located at the top of the reaction chamber 1 and is used for delivering the reaction gas into the reaction chamber 1. The reaction chamber 1 is provided with the carrying disc 3, the gas injection mechanism 2 is arranged opposite to the carrying disc 3, and a reaction zone 6 is formed above the carrying disc 3. The rotation shaft 4 is connected to the carrier plate 3 for driving the carrier plate 3 to rotate during vapor deposition. The shielding member 5 is disposed in the reaction chamber 1 and around the inner side wall of the reaction chamber 1, and the shielding member 5 is exposed to the reaction region 6 instead of the inner side wall of the reaction chamber 1, and the shielding member 5 includes a partition wall 52 adjacent to one side of the reaction region 6. The partition wall 52 and the gas injection mechanism 2 are adaptively surrounded to form a space area covering the reaction zone 6, the radial dimension of the space area gradually increases from top to bottom, and the outer diameter of the bottommost end of the shielding member 5 is adaptive to the inner diameter of the reaction chamber 1. Most importantly, a plurality of purge channels 51 are arranged on the partition wall 52 at intervals, and the purge channels 51 penetrate through the partition wall 52 and are communicated with the space area so as to introduce purge gas into the space area.
In this embodiment, by adding the shielding member 5 inside the reaction chamber 1, the shielding member 5 and the gas injection mechanism 2 are adaptively surrounded to form a space region with gradually increased radial dimension and covering the reaction zone 6, and the purging channel 51 is disposed on the shielding member 5, and the purging gas flows into the reaction chamber 1 through the purging channel 51 to perform a purging function, compared with a vapor deposition device without the shielding member 5, the shielding member 5 can replace the inner side wall of the reaction chamber 1 to be exposed in the reaction zone, thereby protecting the inner side wall of the reaction chamber 1, and the purging function can effectively inhibit or improve deposition of reaction byproducts on the shielding member 5, improve the yield efficiency and quality of equipment growth materials, and prolong the service period of the shielding member 5, thereby prolonging the maintenance period of the reaction chamber 1.
In the present embodiment, the thickness of the partition wall 52 is greater than 5mm, so that the purge passage 51 formed on the partition wall 52 can have a certain length, which can guide the purge gas flowing into the space region.
In this embodiment, the portion of the partition wall 52 located in the space region is substantially surrounded by a horn-like structure having a small upper part and a large lower part. The portion of the partition wall 52 located in the space region may be configured as an inclined surface, an arc surface, a curved surface, a plurality of inclined surfaces with different inclination angles, a combination surface of the inclined surface and the arc surface, or a combination surface of the inclined surface and the curved surface. The shielding member 5 adopts the partition walls 52 with different shapes, so that the distribution of the purge gas in the space area can be more finely matched with the size proportion of the reaction cavity 1, the process, the gas flow conditions and the like, and the gas flow stability in the reaction cavity 1 is further improved.
In some embodiments, the line between the two ends of the axial section line of the portion of the partition wall 52 located in the spatial region (CD segment as shown in fig. 1) makes an angle α with the axis of the rotary shaft 4, the α satisfying: the portion of the partition wall 52 located in the space region is formed to be substantially inclined, and the purge passage 51 in the partition wall 52 may have a predetermined directivity, so that the flow rate of the purge gas may have a predetermined directivity. The magnitude of the angle alpha is coupled by the height H of the reaction zone 6, the dimension L of the gas injection mechanism 2, and the vapor deposition process conditions (e.g., temperature, pressure, gas flow, rotational speed, etc.).
In this embodiment, the partition wall 52 includes a first side 521 adjacent to the inner side wall of the reaction chamber 1 and a second side 522 distant from the inner side wall of the reaction chamber 1, and the second side 522 is the inner side wall of the shutter 5, and the inner side wall of the shutter 5 is exposed to the reaction region 6 instead of the inner side wall of the reaction chamber 1. The purge channel 51 extends from the first side 521 to the second side 522, and the purge channel 51 does not extend beyond the second side 522. If the purge channel 51 extends beyond the second side 522 into the reaction zone 6, the flow of the reaction gas is blocked, which becomes a source of local turbulence.
In this embodiment, the purge channel 51 has a shape including any one of a tube shape and a slit section. Fig. 2 shows a case where the purge passage 51 is tubular in shape, and fig. 3 shows a case where the purge passage 51 is slit-shaped. The purge channel 51 may also be shaped as a combination of tubular and slit segments.
In this embodiment, the purge passage 51 has an inner diameter of 0.2-2mm.
In this embodiment, the inner diameter of the air outlet formed on the second side 522 by the purge passage 51 is equal to or greater than the inner diameter of the air inlet formed on the first side 521 by the purge passage 51. That is, the inner diameter is unchanged from the air inlet of the purge channel 51 to the air outlet of the purge channel 51, or the inner diameter of the air outlet of the purge channel 51 is larger than the inner diameter of the air inlet of the purge channel 51. If the inner diameter of the air outlet of the purge channel 51 is larger, the area between the air outlets of the adjacent purge channels 51 can be reduced, and the purge area is increased, so that the adhesion of reaction byproducts on the partition wall 52 is reduced, and further, in this case, the arrangement of the purge channels 51 on the partition wall 52 can be more sparse, so that the processing difficulty of the shielding piece 5 is reduced, and the cost is reduced.
Referring to fig. 4 and 5, in some embodiments, the purge passage 51 includes a first passage 511 and a second passage 512 communicating with the first passage 511, and an inner diameter of the second passage 512 is gradually increased and is larger than an inner diameter of the first passage 511. Wherein the second channel 512 is in communication with the spatial region. In a further embodiment, the length of the first channel 511 is greater than the length of the second channel 512 in a direction along the centerline of the purge channel 51, wherein the first channel 511 guides the purge gas and the second channel 512 flares to increase the purge area of the purge gas on the partition wall 52. Preferably, the length of the first channel 511 is greater than or equal to 2 times the length of the second channel 512, so as to ensure the air guiding effect of the first channel 511.
In this embodiment, the sum of the areas of the air outlets of the purge channel 51 formed on the second side 522 is greater than or equal to 30% of the area of the second side 522, so as to ensure a purge area, and minimize the adhesion of reaction byproducts on the partition wall 52.
In the present embodiment, referring to fig. 1 to 5, the purge passage 51 includes a vertical purge gas flow passage having a center line parallel to the axis of the rotary shaft 4 such that the gas flow velocity of the purge gas introduced into the space region includes only an axial component.
It should be noted that, in the reaction chamber 1, the gas injection mechanism 2 is disposed opposite to the carrying plate 3, and the gas injection mechanism 2 is disposed at an upper portion, and the carrying plate 3 is disposed at a lower portion, preferably, the axis of the reaction chamber 1 coincides with the axis of the rotating shaft 4, that is, the reaction chamber 1 is a vertical flow chamber, so by designing the direction in which the purge passage 51 penetrates through the shielding member 5, the vertical purge gas flow passage is formed, and the direction in which the purge gas flows into the reaction chamber 1 is downward along the axis direction of the reaction chamber 1, that is, the gas flow velocity of the purge gas flowing into the reaction chamber 1 includes only an axial component. The design can ensure that the purge gas does not generate extra disturbance on the gas in the reaction zone 6, effectively inhibit or improve the deposition of reaction byproducts on the inner side wall of the shielding piece 5 and simultaneously reduce and inhibit the generation of vortex near the inner side wall of the shielding piece 5.
In this embodiment, the shutter 5 surrounds the carrier plate 3, and the distribution range of the purge passages 51 on the partition wall 52 satisfies: the purge passage 51 at the lowermost end of the partition wall 52 forms a purge gas outlet surface not higher than the carrying surface of the carrying tray 3. Further, the distribution range of the purge passages 51 on the partition wall 52 also covers at least part of the area contained from the gas injection mechanism 2 to the carrying surface of the carrying tray 3. Preferably, the purge channels 51 are distributed on the partition wall 52 from the gas injection mechanism 2 to the region of the carrying surface of the carrying tray 3, so as to ensure the maximum purge area. It is necessary that the distance between the purge gas outlet surface formed by the purge channel 51 located at the uppermost end of the partition wall 52 and the outlet surface from the gas injection mechanism 2 is smaller as the flow field of the reaction gas discharged from the edge of the gas injection mechanism 2 is not affected. Defining a distance H between a purge gas outlet surface formed by the uppermost purge channel 51 and an outlet surface of the reaction gas sprayed from the gas injection mechanism 2, and defining a distance H between an outlet surface of the reaction gas sprayed from the gas injection mechanism 2 and a bearing surface of the bearing plate 3, wherein the distance H satisfies the following conditions: h is less than or equal to 0.25 and is H. This allows the dividing wall 52 above the carrier plate 3 to be kept as free of unswept areas as possible, minimizing the likelihood of reaction by-products adhering to the dividing wall 52.
In some embodiments, the radial distance d between the edge of the carrier disc 3 and the shutter 5 is such that: d is more than or equal to 0.1H and less than or equal to H, wherein H is defined as the distance between the gas outlet surface of the reaction gas sprayed from the gas injection mechanism 2 and the bearing surface of the bearing disc 3. If d is too small, the exhaust of the gas in the reaction chamber 1 is not facilitated, and if d is too large, the gas is wasted and the utilization rate of the reaction gas is not high.
In the present embodiment, the purge passages 51 are circumferentially distributed in the partition wall 52, and a plurality of layers of the purge passages 51 are formed along the axial direction of the rotary shaft 4.
In some embodiments, the air outlets formed by adjacent circumferential purge channels 51 on the second side 522 are aligned or offset. Fig. 2 shows a case where the air outlets are arranged in a staggered manner.
Further, the inner diameters of the purge channels 51 of the layers are the same, or the inner diameters of the purge channels 51 of the layers gradually increase from the top of the reaction chamber 1 to the direction of the carrying disc 3.
In some embodiments, the number of purge channels 51 is the same for each layer, or, from the top of the reaction chamber 1 to the direction of the carrier plate 3, the number of purge channels 51 at the lowest layer is multiple than the number of purge channels 51 at the uppermost layer.
Illustratively, 6 circles of the purge channels 51 are disposed on the partition wall 52 along the axial direction of the rotating shaft 4, and the number of the purge channels 51 on each circle is the same, or, assuming that the number of the purge channels 51 on the circle closest to the gas injection mechanism 2 is N, the number of the purge channels 51 on each circle is N, 2N, 3N, 4N, 5N, 6N, or may be N, N, 2N, 3N, or N, N, N, 3N, and so on, in the direction from the top of the reaction chamber 1 to the carrier plate 3, and the specific number distribution of the purge channels 51 is determined by the distribution of the purge gas required by the process, which will not be repeated herein.
Thereby, the distribution of the purge gas from top to bottom of the shutter 5 can be finely adjusted by the size of the purge passage 51 and the distribution density on the partition wall 52, and the maximum purge area is ensured while the flow field of the reaction chamber is not affected.
In this embodiment, referring to fig. 1 and 2, the shielding member 5 includes an annular cavity 53, the annular cavity 53 includes an outer wall near the inner sidewall of the reaction cavity 1 and an inner wall near the reaction zone 6, the inner wall of the annular cavity 53 is formed as the partition wall 52, the outer wall of the annular cavity 53 is adapted to the inner sidewall of the reaction cavity 1, a purge gas inlet 55 is provided on the annular cavity 53, and the annular cavity 53 is in communication with the purge channel 51. In order to improve the uniformity of the purge gas, a plurality of purge gas inlets 55 may be uniformly provided on the annular chamber 53. The purge gas inlet 55 may be located at the top end of the annular chamber 53, and the gas injection mechanism 2 is also adapted to deliver purge gas to the annular chamber 53 through the purge gas inlet 55 located at the top end of the annular chamber 53. In another embodiment, the purge gas inlet 55 may be located on a side wall of the annular chamber 53, and accordingly, the purge gas may not be fed into the annular chamber 53 by the gas injection mechanism 2 any more, but a purge gas supply mechanism (such as a gas pipe) may be further disposed on a side wall of the reaction chamber 1, and the purge gas supply mechanism is in communication with the annular chamber 53 through the purge gas inlet 55 located on the side wall of the annular chamber 53.
In other embodiments, referring to fig. 6 and 7, the shutter 5 is no longer an annular cavity 53, but an annular cavity 53 'is adaptively defined between the partition wall 52 and the inner sidewall of the reaction chamber 1 and the gas injection mechanism 2 during vapor deposition, and the gas injection mechanism 2 is further configured to inject a purge gas into the annular cavity 53', wherein the annular cavity 53 'is in communication with the purge channel 51, and the purge gas is introduced into the space region after entering the purge channel 51 through the annular cavity 53'. In another embodiment, instead of the purge gas being supplied from the gas injection mechanism 2 to the annular chamber 53', a purge gas supply mechanism (e.g., a gas pipe) is provided on the side wall of the reaction chamber 1, and the purge gas supply mechanism is in communication with the annular chamber 53'.
In some specific embodiments, with continued reference to fig. 1 and 2, the gas injection mechanism 2 includes a first gas injection mechanism 21 and a second gas injection mechanism 22, where the first gas injection mechanism 21 is located in a middle region at the top of the reaction chamber 1, and is used to inject a reaction gas into the reaction chamber 1. The second gas injection mechanism 22 is located in the peripheral area at the top of the reaction chamber 1 and is arranged around the first gas injection mechanism 21, the second gas injection mechanism 22 is matched with the top end of the annular chamber 53, the annular chamber 53 is located below the second gas injection mechanism 22, and the gas outlet of the second gas injection mechanism 22 is in abutting communication with the purge gas inlet 55. When vapor deposition is performed in the reaction chamber 1, the second gas injection mechanism 22 is configured to deliver a purge gas into the annular chamber 53, and the purge gas is introduced into the space region through the purge channel 51 after entering the annular chamber 53, so as to perform a purge function, so as to inhibit or improve deposition of reaction byproducts on the inner side wall of the shielding member 5.
In some specific embodiments, the top end of the annular cavity 53 mates with the second gas injection mechanism 22. For example, the shape and size of the top end of the annular chamber 53 is substantially the same as the second gas injection mechanism 22.
In some specific embodiments, with continued reference to fig. 1, the gas outlet surface of the first gas injection mechanism 21 and the gas outlet surface of the second gas injection mechanism 22 are flush or substantially flush, and when vapor deposition is performed in the reaction chamber 1, the top of the annular chamber 53 abuts against the second gas injection mechanism 22, and the gas outlet of the second gas injection mechanism 22 is in abutting communication with the purge gas inlet 55, and then the first gas injection mechanism 21 is used to deliver a reaction gas to the reaction zone 6, and the second gas injection mechanism 22 is used to deliver a purge gas into the annular chamber 53, and the purge gas is introduced into the space region through the purge channel 51 after entering the annular chamber 53, so as to inhibit or improve deposition of reaction byproducts on the inner side wall of the shutter 5.
In other specific embodiments, since the partition wall 52 has a certain wall thickness, in order to allow purge gas to be ejected from a region closest to the gas injection mechanism, see fig. 2, the partition wall 52 is provided in a structure in which a straight tube portion and a horn portion are spliced. The straight tube portion is located at the upper end of the shielding member 5, the radial dimensions of the straight tube portion are identical, the horn portion is located at the lower end of the shielding member 5, the radial dimensions of the horn portion are gradually increased from top to bottom, and the purging channels 51 are distributed in the horn portion. In order to fit the installation of the shielding member 5, referring to fig. 8, the air outlet surface of the second air injection mechanism 22 is higher than the air outlet surface of the first air injection mechanism 21, so that an upward concave step exists between the air outlet surface of the second air injection mechanism 22 and the air outlet surface of the first air injection mechanism 21. When vapor deposition is performed in the reaction chamber 1, the straight cylinder portion is adaptively inserted into the upward recessed step, the top end of the annular chamber 53 is abutted against the second gas injection mechanism 22, the gas outlet of the second gas injection mechanism 22 is abutted against and communicated with the purge gas inlet 55, the horn portion is matched with the first gas injection mechanism 21 to form the space region, the second gas injection mechanism 22 is used for conveying purge gas into the annular chamber 53, and the purge gas is introduced into the space region through the purge channel 51 after entering the annular chamber 53 so as to inhibit or improve deposition of reaction byproducts on the inner side wall of the shielding member 5.
Example two
Referring to fig. 9 to 11, the present embodiment provides a vapor deposition apparatus, which is the same as the first embodiment and will not be described again, and which is different from the first embodiment in that: in the first embodiment, the purge passage 51 is a vertical purge gas passage, that is, the center line of the purge passage 51 is parallel to the axis of the rotary shaft 4, so that the gas flow rate of the purge gas introduced into the space region includes only an axial component. In this embodiment, the purge passage 51 is not a vertical purge flow passage, but a rotating purge flow passage, which extends through the partition wall 52 in a circumferential direction at an angle β, so that the flow velocity of the purge gas introduced into the space region includes an axial component and a tangential component, thereby forming a rotating purge flow, and the rotating purge flow passages are circumferentially arranged on the partition wall 52 so that the rotating direction of the rotating purge flow is the same as the rotating direction of the rotating shaft 4. In order to avoid that the flow field in the reaction chamber is affected by the purge gas introduced into the reaction chamber, the angle β should be such that the flow velocity of the purge gas introduced into the space region includes only an axial component and a tangential component, and does not include a radial component, i.e., the direction of the purge passage 51 cannot be inclined toward the axis of the rotary shaft 4 in the radial direction of the reaction chamber 1.
Wherein beta is: a tangential plane to the rotation axis 4 defining a bottom centroid of an air outlet formed on the second side 522 through the purge passage 51 is a tangential plane to which the bottom centroid is located, a center line of the purge passage 51 is located in the tangential plane to which the bottom centroid is located, and an angle β is formed between the center line of the purge passage 51 and the axis of the rotation axis 4, the β being not equal to 0 °.
In this embodiment, the rotating purge gas flow is formed by spraying the purge gas near the rotating carrying disk 3 by using the rotating purge gas flow channel, and the direction of the rotating purge gas flow is consistent with the rotating direction of the carrying disk 3 in the vapor deposition apparatus in the reaction process, and the rotating purge gas flow has tangential speed and momentum, so that the flow impact mixing and streamline steering process of the flow field in the reaction cavity 1 in the edge area is smoother, thereby inhibiting the generation of vortex in the reaction cavity 1, and the laminar flow characteristic of the flow field in the reaction cavity 1 is more stable.
In some embodiments, the angle β of the rotating purge gas flow channel at the lowermost level of the dividing wall 52 is greater than or equal to the angle β of the rotating purge gas flow channel at the uppermost level of the dividing wall 52, or increases gradually from top to bottom along the dividing wall 52. In this way, the impact on the flow field at the upper part of the reaction cavity 1 can be reduced while the flow impact mixing and streamline steering process of the flow field in the reaction cavity 1 at the edge area is more stable.
Preferably, the ratio of the tangential component to the axial component of the flow velocity of the purge gas is not too large, which would have a large influence on the flow in the reaction zone and would be detrimental to the uniform injection of the reaction gas into the reaction chamber 1. Preferably, 0 DEG < beta < 60 deg.
Example III
The present embodiment provides a vapor deposition apparatus, which is different from the first and second embodiments in that the purge passage 51 includes a vertical purge flow passage and a rotational purge flow passage.
It should be noted that, since the carrier plate 3 rotates at a high speed, the region near the carrier plate 3 only needs to rotate the purge gas flow to reduce the vortex, it is preferable to provide the rotating purge gas flow passage on the shield 5 near the circumferential region of the carrier plate 3. In addition, since the reaction chamber 1 of the vapor deposition apparatus is a vertical flow chamber, in order to avoid affecting the flow field of the reaction chamber 1, the purge channels 51 in other areas on the shielding member 5 are all arranged as vertical purge gas flow channels except for the purge channels 51 in the circumferential area near the carrier plate 3.
Example IV
Referring to fig. 1, the vapor deposition apparatus according to this embodiment is similar to any one of the first to third embodiments in structure, wherein the shielding member 5 includes an annular cavity 53, an inner wall of the annular cavity 53 is formed as the partition wall 52, an outer wall of the annular cavity 53 is adapted to an inner wall of the reaction cavity 1, a purge gas inlet 55 is provided in the annular cavity 53, and the annular cavity 53 is in communication with the purge channel 51. In order to improve the uniformity of the purge gas, a plurality of purge gas inlets 55 may be uniformly provided on the annular chamber 53. In this embodiment, the purge gas in the annular cavity 53 is uniformly regulated, the same purge gas is introduced into the annular cavity 53, and the purge gas entering the annular cavity 53 through the purge gas inlet 55 is uniformly distributed and then is introduced into the space region through each purge channel 51 on the partition wall 52. The kind and composition of the purge gas delivered by the annular chamber 53 into the purge channel 51 are the same. It should be noted that the same purge gas mentioned above does not refer to a single gas species, but refers to the same gas that is fed into the reaction chamber 1 from each of the purge channels 51, and may be a single gas or a mixed gas, and the purge gases do not react with each other, or the purge gases react with each other but do not generate the target product. For example, for group III-V MOCVD, the purge gas may include one or more of H2, N2, and an inert gas, and may also be a group V hydride source gas and a carrier gas.
A control unit (not shown), such as a valve, a mass flow controller, a pressure controller, etc., is further disposed before the purge gas inlet 55, and the control unit uniformly controls the purge gas in the annular cavity 53, so that the types and the components of the purge gas in the purge channel 51 are the same.
Example five
The difference between the vapor deposition apparatus provided in this embodiment and the fourth embodiment is that, referring to fig. 12, at least one blocking member 54 is disposed on the shielding member 5, the blocking member 54 is located in the annular cavity 53, the annular cavity 53 is divided into a plurality of sub annular cavities 531 by the blocking member 54, and the purge gas delivered by at least two sub annular cavities 531 is independently regulated.
In some embodiments, the blocking member 54 is a cylindrical body coaxial with the outer wall of the annular cavity 53, and referring to fig. 12, an upper end of the blocking member 54 abuts against the inner top wall of the annular cavity 53, and a lower end of the blocking member 54 abuts against the partition wall 52. When the number of the blocking members 54 is plural, the blocking members 54 are coaxially distributed from inside to outside in the radial direction of the reaction chamber 1, and the height of the blocking members 54 in the axial direction of the reaction chamber 1 is gradually increased from inside to outside. The blocking member 54 divides the annular cavity 53 into a plurality of sub annular cavities 531 from inside to outside, and a sub purge gas inlet 551 is provided at the top end or side wall of each sub annular cavity 531, so that the purge gas delivered by at least two sub annular cavities 531 is independently controlled. Accordingly, the partition member 54 divides the partition wall 52 into a plurality of sub-areas from top to bottom, and a plurality of purge passages 51 are correspondingly disposed in each sub-area, so that the purge gas delivered by the purge gas passages 51 in at least two sub-areas is independently controlled by controlling the purge gas delivered by the sub-annular cavity 531.
In other embodiments, the baffle 54 is an annular plate parallel to the top of the annular cavity 53, and referring to fig. 13, the outer edge of the baffle 54 abuts the outer wall of the annular cavity 53 and the inner edge of the baffle 54 abuts the partition wall 52. When the number of the blocking members 54 is plural, the blocking members 54 are stacked in parallel in the axial direction of the reaction chamber 1, and the width of the blocking members 54 in the radial direction of the reaction chamber 1 is gradually reduced from top to bottom. The blocking member 54 divides the annular cavity 53 into a plurality of sub annular cavities 531 from top to bottom, and a sub purge gas inlet 551 is provided on a sidewall of each sub annular cavity 531, so that the purge gas delivered by at least two sub annular cavities 531 is independently controlled. Accordingly, the partition member 54 divides the partition wall 52 into a plurality of sub-areas from top to bottom, and a plurality of purge passages 51 are correspondingly disposed in each sub-area, so that the purge gas delivered by the purge gas passages 51 in at least two sub-areas is independently controlled by controlling the purge gas delivered by the sub-annular cavity 531.
Further, the flow rate of the purge gas supplied in each of the sub-annular chambers 531 is equal, or the flow rate of the purge gas supplied in each of the sub-annular chambers 531 from inside to outside is gradually increased. In this way, the flow rate of the purge gas introduced into the space region through the purge passage 51 in each of the sub-regions is made equal from top to bottom, or the flow rate of the purge gas introduced into the space region through the purge passage 51 in each of the sub-regions from top to bottom is gradually increased.
In some embodiments, the average molecular weight of the purge gas delivered in each of the sub-annular chambers 531 is equal, or the average molecular weight of the purge gas delivered in each of the sub-annular chambers 531 gradually increases from inside to outside. In this way, the average molecular weight of the purge gas introduced into the space region through the purge passage 51 in each of the sub-regions is made equal from top to bottom, or the average molecular weight of the purge gas introduced into the space region through the purge passage 51 in each of the sub-regions from top to bottom is gradually increased.
In this embodiment, the baffle member 54 is disposed on the shielding member 5 to divide the annular cavity 53 into a plurality of sub annular cavities 531 from inside to outside, so that the purge gas is more properly distributed after entering the reaction zone, and the distribution of the purge gas from top to bottom of the shielding member 5 is further finely adjusted, so that the size ratio of the reaction cavity 1, the process, the gas flow conditions, and the like can be more finely matched, and the gas flow stability in the reaction cavity 1 is greatly improved.
Example six
The present embodiment provides a vapor deposition apparatus, which has a structure similar to that of any one of the first to fifth embodiments, wherein the shielding member 5 includes an annular cavity 53, an inner wall of the annular cavity 53 is formed as the partition wall 52, an outer wall of the annular cavity 53 is adapted to an inner wall of the reaction chamber 1, a purge gas inlet 55 is provided at a top end of the annular cavity 53, and the annular cavity 53 is in communication with the purge channel 51; the gas injection mechanism 2 comprises a first gas injection mechanism 21 and a second gas injection mechanism 22, wherein the first gas injection mechanism 21 is positioned in the middle area at the top of the reaction chamber 1 and is used for injecting reaction gas into the reaction chamber 1; the second gas injection mechanism 22 is located in the peripheral area at the top of the reaction chamber 1 and is disposed around the first gas injection mechanism 21; the annular cavity 53 is located below the second gas injection mechanism 22, and an outlet of the second gas injection mechanism 22 is in abutting communication with the purge gas inlet 55, so as to convey purge gas to the annular cavity 53, and the purge gas enters the annular cavity 53 and is then led into the space region through the purge channel 51. The difference is that, referring to fig. 14, in this embodiment, the side wall of the reaction chamber 1 is provided with an opening 11, the opening 11 is used for putting in or taking out the carrier plate 3, a lifting mechanism (not shown in the drawing) is located on the top wall or the bottom wall of the reaction chamber, the lifting mechanism is connected with the shielding member 5, and the lifting mechanism drives the shielding member 5 to move up and down along the axial direction of the rotating shaft 4, so that the shielding member 5 shields the opening 11 or exposes the opening 11, and the carrier plate 3 is convenient to take and place.
In this embodiment, when the carrier plate 3 needs to be put in or taken out, the lifting mechanism drives the shielding member 5 to move downwards along the axial direction of the rotating shaft 4, so that the opening 11 is exposed, and the carrier plate 3 can be taken out through the opening 11. When vapor deposition is required to be performed in the reaction chamber 1, the lifting mechanism drives the shielding member 5 to move upwards along the axial direction of the rotating shaft 4, so that the air outlet of the second gas injection mechanism 22 is in abutting connection with the purge gas inlet 55, and the opening 11 is shielded by the shielding member 5, so that a deposition reaction can be performed in the reaction chamber 1.
In one embodiment, referring to fig. 1, when the gas outlet surface of the first gas injection mechanism 21 and the gas outlet surface of the second gas injection mechanism 22 are flat or substantially flat, and the shielding member 5 is inclined, the space region is surrounded by a circular truncated cone structure.
When vapor deposition is required in the reaction chamber 1, the lifting mechanism moves upwards, the top of the shielding member 5 is abutted against the second gas injection mechanism 22, the gas outlet of the second gas injection mechanism 22 is abutted against and communicated with the purge gas inlet 55, and the opening 11 is shielded by the shielding member 5. The first gas injection means 21 is then used to deliver a reaction gas to the reaction zone and the second gas injection means 22 is used to deliver a purge gas into the annular chamber 53, which purge gas is introduced into the spatial region via the purge channel 51 after entering the annular chamber 53 to inhibit or avoid adhesion of reaction by-products to the inner side walls of the shield 5.
When the carrier plate 3 needs to be put in or taken out, the lifting mechanism drives the shielding member 5 to move downwards along the axial direction of the rotating shaft 4, the air outlet of the second air injection mechanism 22 is separated from the purge air inlet 55, and the carrier plate is continuously lowered until the opening 11 is exposed, so that the carrier plate 3 can be taken out through the opening 11.
In another embodiment, referring to fig. 8 and 14, when the partition wall 52 is configured by splicing a straight cylindrical portion and a flare portion, where the straight cylindrical portion is located at the upper end of the shielding member 5 and has a uniform radial dimension, the flare portion is located at the lower end of the shielding member 5 and has a radial dimension that gradually increases from top to bottom, the flare portion and the first gas injection mechanism 21 cooperate to form the space region, and, adaptively, in order to cooperate with the installation of the shielding member 5, the gas outlet surface of the second gas injection mechanism 22 is higher than the gas outlet surface of the first gas injection mechanism 21, so that an upward concave step exists between the gas outlet surface of the second gas injection mechanism 22 and the gas outlet surface of the first gas injection mechanism 21.
When vapor deposition is required in the reaction chamber 1, the lifting mechanism moves upwards, the straight cylinder portion is inserted into the upward concave step in an adapting way to be abutted against the second gas injection mechanism 22, and the gas outlet of the second gas injection mechanism 22 is abutted against and communicated with the purge gas inlet 55, and at the moment, the opening 11 is blocked by the blocking piece 5. The first gas injection means 21 is then used to deliver a reactive gas to the reaction zone and the second gas injection means 22 is used to deliver a purge gas into the annular chamber 53.
When the carrier plate 3 needs to be put in or taken out, the lifting mechanism drives the shielding member 5 to move downwards along the axial direction of the rotating shaft 4, the air outlet of the second air injection mechanism 22 is separated from the purge air inlet 55, and the carrier plate is continuously lowered until the opening 11 is exposed, so that the carrier plate 3 can be taken out through the opening 11.
While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (23)
1. A vapor deposition apparatus, comprising:
a reaction chamber;
the gas injection mechanism is positioned at the top of the reaction cavity;
the bearing plate is positioned in the reaction cavity and is opposite to the gas injection mechanism, and a reaction area is formed above the bearing plate;
the rotating shaft is connected with the bearing disc and drives the bearing disc to rotate during vapor deposition;
The shielding piece is positioned in the reaction cavity and surrounds the inner side wall of the reaction cavity, the shielding piece comprises a separation wall close to one side of the reaction area, the separation wall and the gas injection mechanism are adaptively surrounded to form a space area, the space area covers the reaction area, the radial dimension of the space area is gradually increased from top to bottom, and the outer diameter of the bottommost end of the shielding piece is matched with the inner diameter of the reaction cavity;
the purging channels are distributed on the partition wall, penetrate through the partition wall and are communicated with the space area, so that purging gas is introduced into the space area.
2. The vapor deposition apparatus according to claim 1, wherein the purge passage comprises a vertical purge gas flow passage having a center line parallel to an axis of the rotary shaft such that a gas flow velocity of the purge gas introduced into the space region includes only an axial component.
3. The vapor deposition apparatus according to claim 2, wherein the purge passage further comprises a rotating purge gas flow passage that is inclined circumferentially through the partition wall at an angle β such that a gas flow velocity of the purge gas introduced into the space region includes an axial component and a tangential component, thereby forming a rotating purge gas flow, the rotating purge gas flow passage being circumferentially arranged on the partition wall such that a rotation direction of the rotating purge gas flow is the same as a rotation direction of the rotating shaft.
4. A vapor deposition apparatus according to claim 3, wherein the angle β of the rotating purge gas flow channel located at the lowermost layer of the partition wall is equal to or greater than the angle β of the rotating purge gas flow channel located at the uppermost layer of the partition wall, or the angle β of the rotating purge gas flow channel gradually increases from top to bottom along the partition wall.
5. A vapor deposition apparatus according to claim 3, wherein the rotating purge gas flow channel is located on the shield in a circumferential region adjacent the carrier plate.
6. The vapor deposition apparatus according to claim 1, wherein the partition wall includes a first side surface near an inner side wall of the reaction chamber and a second side surface distant from the inner side wall of the reaction chamber, the purge passage penetrates from the first side surface to the second side surface without exceeding the second side surface, and an inner diameter of an air outlet formed by the purge passage on the second side surface is equal to or larger than an inner diameter of an air inlet formed by the purge passage on the first side surface.
7. The vapor deposition apparatus of claim 1, wherein the shield surrounds the carrier tray and the purge channel is distributed over the dividing wall in a range that satisfies: and a purge gas outlet surface formed by the purge channel at the lowest end of the partition wall is not higher than the bearing surface of the bearing plate.
8. The vapor deposition apparatus of claim 7, wherein the distribution of the purge channels over the dividing wall further covers at least a portion of an area encompassed from the gas injection mechanism to the load-bearing surface of the load-bearing disk.
9. The vapor deposition apparatus according to any one of claims 1 to 8, wherein the shield comprises an annular chamber including an outer wall adjacent to an inner side wall of the reaction chamber and an inner wall adjacent to the reaction zone, the inner wall of the annular chamber being formed as the partition wall, the outer wall of the annular chamber being adapted to the inner side wall of the reaction chamber, a purge gas inlet being provided on the annular chamber, the annular chamber being in communication with the purge passage.
10. The vapor deposition apparatus according to claim 9, wherein at least one barrier member is provided on the shutter member, the barrier member being located in the annular chamber, the barrier member dividing the annular chamber into a plurality of sub-annular chambers, the purge gas being supplied from at least two of the sub-annular chambers being independently regulated.
11. The vapor deposition apparatus of claim 10, wherein the barrier is a cylinder coaxial with an outer wall of the annular chamber, an upper end of the barrier abutting an inner top wall of the annular chamber, a lower end of the barrier abutting the partition wall; alternatively, the blocking piece is an annular plate parallel to the top of the annular cavity, the outer edge of the blocking piece abuts against the outer wall of the annular cavity, and the inner edge of the blocking piece abuts against the isolation wall.
12. The vapor deposition apparatus according to claim 10, wherein the flow rate of the purge gas supplied in each of the sub-annular chambers is equal, or the flow rate of the purge gas supplied in each of the sub-annular chambers from inside to outside is gradually increased.
13. The vapor deposition apparatus according to claim 12, wherein an average molecular weight of the purge gas supplied in each of the sub-annular chambers is equal, or an average molecular weight of the purge gas supplied in each of the sub-annular chambers from inside to outside is gradually increased.
14. The vapor deposition apparatus according to claim 9, wherein the gas injection mechanism comprises a first gas injection mechanism and a second gas injection mechanism, the first gas injection mechanism being located in an intermediate region of the top of the reaction chamber for injecting a reaction gas into the reaction chamber; the second gas injection mechanism is located in the peripheral area at the top of the reaction cavity and surrounds the first gas injection mechanism, the annular cavity is located below the second gas injection mechanism, the purge gas inlet is located at the top end of the annular cavity, the gas outlet of the second gas injection mechanism is communicated with the purge gas inlet in an abutting mode and used for conveying purge gas to the annular cavity, and the purge gas enters the annular cavity and is guided into the space area through the purge channel.
15. The vapor deposition apparatus according to claim 14, wherein the side wall of the reaction chamber is provided with an opening for putting in or taking out the carrier tray, a lifting mechanism is provided on the top wall or the bottom wall of the reaction chamber, the lifting mechanism is connected with the shielding member, and the lifting mechanism drives the shielding member to move up and down along the axis direction of the rotating shaft so that the shielding member shields the opening or exposes the opening.
16. The vapor deposition apparatus according to claim 15, wherein when the loading tray is required to be put in or taken out, the elevating mechanism drives the shutter to move downward in the axial direction of the rotation shaft so that the opening is exposed;
when vapor deposition is required to be carried out in the reaction cavity, the lifting mechanism drives the shielding piece to move upwards along the axial direction of the rotating shaft, so that the air outlet of the second gas injection mechanism is communicated with the purge gas inlet in an abutting mode, and the opening is shielded by the shielding piece.
17. The vapor deposition apparatus of claim 14, wherein a top end of the annular chamber mates with the second gas injection mechanism.
18. The vapor deposition apparatus of claim 17, wherein the gas outlet face of the first gas injection mechanism is flush with the gas outlet face of the second gas injection mechanism.
19. The vapor deposition apparatus according to claim 17, wherein the partition wall includes a straight cylindrical portion having a uniform radial dimension at an upper end and a flare portion having a gradually increasing radial dimension from top to bottom at a lower end.
20. The vapor deposition apparatus of claim 19, wherein the gas outlet face of the second gas injection mechanism is higher than the gas outlet face of the first gas injection mechanism such that there is an upwardly recessed step between the gas outlet face of the second gas injection mechanism and the gas outlet face of the first gas injection mechanism, the straight barrel portion being adapted to be inserted into the upwardly recessed step when vapor deposition is performed in the reaction chamber.
21. The vapor deposition apparatus according to claim 1, wherein the purge passages are circumferentially distributed in the partition wall, and a plurality of layers of the purge passages are formed in an axial direction of the rotation shaft.
22. The vapor deposition apparatus of claim 21, wherein the purge channels of each layer have the same inner diameter or the purge channels of each layer have an inner diameter that gradually increases from the top of the reaction chamber to the carrier plate.
23. The vapor deposition apparatus of claim 21, wherein the number of purge channels for each layer is the same, or the number of purge channels for a lowermost layer is a multiple of the number of purge channels for an uppermost layer in a direction from a top of the reaction chamber to the susceptor.
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| TW200720456A (en) * | 2005-09-13 | 2007-06-01 | Applied Materials Inc | Large-area magnetron sputtering chamber with individually controlled sputtering zones |
| CN102839358A (en) * | 2011-06-20 | 2012-12-26 | 上海永胜半导体设备有限公司 | Hot purging structure of metal organic chemical vapor deposition device |
| KR20140000884A (en) * | 2012-06-26 | 2014-01-06 | 주식회사 에스에프에이 | Metal organic chemical vapor deposition apparatus |
| CN109735822A (en) * | 2018-11-14 | 2019-05-10 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor equipment |
| KR20210099232A (en) * | 2020-02-03 | 2021-08-12 | 주식회사 제이엔케이 | Apparatus for low pressure chemical vapor deposition |
| CN217026075U (en) * | 2022-01-25 | 2022-07-22 | 楚赟精工科技(上海)有限公司 | Chemical vapor deposition equipment |
| CN115874281A (en) * | 2022-12-16 | 2023-03-31 | 楚赟精工科技(上海)有限公司 | Isolation baffle device of MOCVD reaction chamber |
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