CN117867473A - Vapor deposition equipment - Google Patents

Abstract

The invention provides vapor deposition equipment, which comprises a reaction cavity; the first gas injection mechanism is positioned in the middle area at the top of the reaction cavity; the second gas injection mechanism is positioned in the peripheral area at the top of the reaction cavity and surrounds the first gas injection mechanism; the shielding piece is arranged around the inner side wall of the reaction cavity, an annular cavity is formed by the shielding piece, the inner side wall of the reaction cavity and the second gas injection mechanism in an adaptive manner, and purge gas is injected into the annular cavity by the second gas injection mechanism; the shielding piece and the first gas injection mechanism are arranged in an enclosed mode in an adaptive mode to form a space area with the radial size gradually increasing from top to bottom, the outer diameter of the bottommost end of the shielding piece is matched with the inner diameter of the reaction cavity, and the purging channels are distributed on the shielding piece to introduce purging gas into the space area. The vapor deposition equipment provided by the invention can improve the output efficiency and quality of the growth materials of the equipment and prolong the maintenance period of the reaction cavity.

Description

Vapor deposition equipment

Technical Field

The invention relates to the technical field of semiconductor equipment, in particular to vapor deposition equipment.

Background

Vapor deposition on semiconductor wafers to grow semiconductor thin films is a very important module in semiconductor manufacturing processes. Typical vapor deposition apparatuses mainly include chemical vapor deposition apparatuses, physical vapor deposition apparatuses, plasma-enhanced vapor deposition apparatuses, metal Organic Chemical Vapor Deposition (MOCVD) apparatuses, and the like. Commercially, these devices are used to fabricate solid state (semiconductor) microelectronic, optical and optoelectronic devices, as well as other electronic/optoelectronic materials and devices.

In general, in the vapor deposition process, a susceptor is disposed in a reaction chamber, and a wafer is placed on the susceptor. Process gases are introduced into the reaction chamber through a gas inlet device (e.g., a showerhead) and delivered to the surface of one or more wafers placed on a carrier plate for processing, thereby growing films of a particular crystal structure. Meanwhile, in order to realize uniform deposition, the bearing disc rotates at a high speed under the drive of the rotating shaft. Because the carrier plate drags the gas to rotate, gas flow vortex is easy to generate near the side wall of the reaction zone (namely, near the edge of the carrier plate in the gas inflow direction), and particularly, the gas flow vortex is obvious under the condition of high rotating speed (the rotating speed is more than or equal to 200 RPM) of the carrier plate.

In the presence of a certain vortex of gas, the inner side walls of the reaction chamber may have a relatively severe deposition of reaction byproducts, and even in the absence of a vortex of gas, the inner side walls of the reaction chamber may have a small deposition of reaction byproducts due to diffusion of the reactants. These reaction byproducts can present several problems:

1. the presence of reaction byproducts can become a source of particle defects during the growth of the material, thereby reducing the yield of the grown material.

2. The reaction by-products are generally solid in a polycrystalline or amorphous form, and the reflectivity of the side wall of the reaction zone can change gradually along with the progress of growth, so that the temperature field stability of the reaction zone is affected.

3. The generation and accumulation of reaction byproducts also force the cleaning and maintenance frequency of the reaction cavity to be improved, and the effective growth productivity of the reaction cavity is reduced, thereby increasing the use cost.

Disclosure of Invention

The invention aims to provide vapor deposition equipment, which can improve the output efficiency and quality of equipment growth materials and prolong the maintenance period of a reaction cavity.

To achieve the above object, the present invention provides a vapor deposition apparatus comprising:

a reaction chamber;

the first gas injection mechanism is positioned in the middle area of the top of the reaction cavity and is used for injecting reaction gas into the reaction cavity;

the second gas injection mechanism is positioned in the peripheral area at the top of the reaction cavity and surrounds the first gas injection mechanism;

the bearing plate is positioned in the reaction cavity and is opposite to the first gas injection mechanism, and a reaction area is formed above the bearing plate;

the rotating shaft is connected with the bearing disc and drives the bearing disc to rotate during vapor deposition;

the shielding piece is positioned in the reaction cavity and surrounds the inner side wall of the reaction cavity, an annular cavity is formed by the shielding piece, the inner side wall of the reaction cavity and the second gas injection mechanism in an adaptive manner during vapor deposition, and purge gas is injected into the annular cavity by the second gas injection mechanism; the shielding piece and the first gas injection mechanism are arranged in a surrounding way to form a space area in an adapting way, the radial dimension of the space area is gradually increased from top to bottom, the outer diameter of the bottommost end of the shielding piece is adapted to the inner diameter of the reaction cavity,

The purging channels are distributed on the shielding piece and penetrate through the shielding piece, and the purging channels conduct the annular cavity with the space area so as to introduce purging gas into the space area.

The vapor deposition equipment provided by the invention has the beneficial effects that: through increasing a shielding piece in the inner side of the reaction cavity, during vapor deposition, the shielding piece and the first gas injection mechanism are adaptively surrounded to form a space area with gradually increased radial size and covering the reaction area, an annular cavity is adaptively surrounded between the shielding piece and the inner side wall of the reaction cavity and between the shielding piece and the second gas injection mechanism, a purging channel is arranged on the shielding piece, the second gas injection mechanism injects purging gas into the annular cavity, the purging gas in the annular cavity is injected into the space area through the purging channel, the purging effect is achieved on the inner side wall of the shielding piece, compared with vapor deposition equipment without the shielding piece, the shielding piece can replace the inner side wall of the reaction cavity to be exposed in the reaction area, the inner side wall of the reaction cavity is protected, and the purging function can effectively inhibit or improve deposition of reaction byproducts on the shielding piece, improve the output efficiency and quality of equipment growth materials, prolong the service cycle of the shielding piece, and accordingly prolong the maintenance cycle of the reaction cavity.

In some embodiments, the purge channel comprises a vertical purge gas flow channel having a centerline parallel to the axial direction of the rotating shaft such that the gas flow velocity of the purge gas introduced into the spatial region comprises only an axial component.

In some embodiments, the purge channel further comprises a rotating purge gas flow channel that is inclined circumferentially through the shield at an angle β such that the gas flow velocity of the purge gas introduced into the spatial region comprises only an axial component and a tangential component, thereby forming a rotating purge gas flow, the rotating purge gas flow channel being circumferentially arranged on the shield such that the direction of rotation of the rotating purge gas flow is the same as the direction of rotation of the rotating shaft.

In some embodiments, the angle β of the rotating purge gas flow channel at the lowermost level of the shield is greater than or equal to the angle β of the rotating purge gas flow channel at the uppermost level of the shield, or increases progressively from top to bottom along the shield.

In some embodiments, the rotating purge gas flow channel is located on the shield in a circumferential region proximate to the carrier platter.

In some embodiments, the shield includes a first side proximate to the interior sidewall of the reaction chamber and a second side distal from the interior sidewall of the reaction chamber, the purge channel extends from the first side to the second side without exceeding the second side, and an inner diameter of an air outlet formed by the purge channel on the second side is greater than or equal to an inner diameter of an air inlet formed by the purge channel on the first side.

In some embodiments, the purge channels are circumferentially distributed about the shield and form multiple layers of purge channels along the axis of the rotating shaft.

In some embodiments, from the top of the reaction chamber to the direction of the carrier plate, a distance between a purge gas outlet surface formed by the purge channel on the uppermost layer and the first gas injection mechanism outlet surface is defined as H, and a distance between the first gas injection mechanism outlet surface and the carrier surface of the carrier plate is defined as H, so that the following conditions are satisfied: h is less than or equal to 0.25H.

In some embodiments, the purge channels at the lowest layer form a purge gas outlet surface that is not higher than the bearing surface of the bearing plate.

In some embodiments, a distance H between the gas outlet face of the first gas injection mechanism and the bearing face of the bearing disk, and a radial distance d between the edge of the bearing disk and the shield are defined, so as to satisfy: d is more than or equal to 0.1H and less than or equal to 2H.

In some embodiments, the gas outlet surface of the second gas injection mechanism is higher than the gas outlet surface of the first gas injection mechanism, so that an upward concave step exists between the gas outlet surface of the second gas injection mechanism and the gas outlet surface of the first gas injection mechanism.

In some embodiments, the shielding member comprises a straight barrel part with uniform radial dimension at the upper end and a horn part with gradually increased radial dimension from top to bottom at the lower end, the purging channels are distributed in the horn part, and the straight barrel part is adaptively inserted into the upward concave step when vapor deposition is carried out in the reaction cavity.

In some embodiments, the shielding member is provided with at least one blocking member, the blocking member is a cylinder body coaxial with the reaction cavity, the upper end of the blocking member is abutted against the second gas injection mechanism, the lower end of the blocking member is abutted against the first side surface of the shielding member, the annular cavity is divided into a plurality of sub annular cavities from inside to outside by the blocking member, and the air outlets of the second gas injection mechanism are communicated with the sub annular cavities in a one-to-one correspondence manner, so that the purge gas conveyed by at least two sub annular cavities is independently regulated and controlled.

In some embodiments, the flow rate of the purge gas delivered in each of the sub-annular chambers is equal, or gradually increases from inside to outside.

In some embodiments, the average molecular weight of the purge gas delivered in each of the sub-annular chambers is equal, or gradually increases from inside to outside.

In some embodiments, an opening is formed in a side wall of the reaction chamber, the opening is used for placing or taking out the carrying disc, a lifting mechanism is located on the top wall or the bottom wall of the reaction chamber, the lifting mechanism is connected with the shielding piece, and the lifting mechanism drives the shielding piece to move up and down along the axial direction of the rotating shaft, so that the shielding piece shields the opening or exposes the opening.

In some embodiments, when the carrier tray needs to be put in or taken out, the lifting mechanism drives the shielding piece to move downwards along the axial direction of the rotating shaft, so that the opening is exposed, and at the moment, the straight barrel part leaves the upward concave step;

when vapor deposition is carried out in the reaction cavity, the lifting mechanism drives the shielding piece to move upwards along the axial direction of the rotating shaft, so that the straight barrel part is adaptively inserted into the upward concave step, the top end of the shielding piece is abutted to the second gas injection mechanism, and the opening is shielded by the shielding piece.

Drawings

FIG. 1 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention;

FIG. 2 is a schematic perspective view of a view from an oblique top of a tubular shutter as a purge channel according to an embodiment of the present invention;

FIG. 3 is a schematic perspective view of a shield with slit segments as purge passages according to an embodiment of the present invention;

FIG. 4 is a schematic perspective view of a shielding member with a large opening at the air outlet of a purge channel according to an embodiment of the present invention;

FIG. 5 is an enlarged view of FIG. 4 at A;

FIG. 6 is a schematic cross-sectional view of another vapor deposition apparatus according to an embodiment of the present invention;

FIG. 7 is a schematic perspective view of a top-tilting view of a shield having a rotary purge flow channel according to an embodiment of the present invention;

FIG. 8 is an enlarged view at B in FIG. 7;

FIG. 9 is a schematic perspective view of a shielding member with a barrier in an embodiment of the present invention in a top-down oblique view;

FIG. 10 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention when the opening of the reaction chamber is exposed.

FIG. 11 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention when shielding an opening of a reaction chamber.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items. In the description of the present invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate describing the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.

Example 1

Fig. 1 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention.

Referring to fig. 1, the present embodiment provides a vapor deposition apparatus including a reaction chamber 1, a gas injection mechanism 2, a carrier plate 3, a rotation shaft 4, and a shutter 5. The vapor deposition apparatus may be, for example, a chemical vapor deposition device, a physical vapor deposition device, a plasma enhanced vapor deposition device, a Metal Organic Chemical Vapor Deposition (MOCVD) device, or the like. The cross section of the reaction chamber 1 is generally circular or circular-like in structure. The gas injection mechanism 2 includes a first gas injection mechanism 21 and a second gas injection mechanism 22, where the first gas injection mechanism 21 is located in a middle area at the top of the reaction chamber 1, and is configured to inject a reaction gas into the reaction chamber 1. The second gas injection mechanism 22 is located in the peripheral area at the top of the reaction chamber 1 and is disposed around the first gas injection mechanism 21. The reaction chamber 1 is provided with the carrying disc 3, and the first gas injection mechanism 21 is disposed opposite to the carrying disc 3, and a reaction zone 6 is formed above the carrying disc 3. The rotation shaft 4 is connected to the carrier plate 3 for driving the carrier plate 3 to rotate during vapor deposition. The shielding member 5 is located in the reaction chamber 1 and is disposed around the inner side wall of the reaction chamber 1. The shielding member 5, the inner side wall of the reaction chamber 1 and the second gas injection mechanism 22 are adaptively surrounded to form an annular chamber 53, and the second gas injection mechanism 22 is used for injecting purge gas into the annular chamber 53. The shielding member 5 and the first gas injection mechanism 21 are adaptively surrounded to form a space area, the radial dimension of the space area is gradually increased from top to bottom, and the outer diameter of the bottommost end of the shielding member 5 is adaptive to the inner diameter of the reaction cavity 1.

Most importantly, a plurality of purge channels 51 are distributed on the shielding member 5, the purge channels 51 penetrate through the shielding member 5, and the purge channels 51 conduct the annular cavity 53 and the space area so as to introduce purge gas into the space area.

In this embodiment, by adding the shielding member 5 inside the reaction chamber 1, the shielding member 5 and the first gas injection mechanism 21 are adaptively surrounded to form a space region with gradually increased radial dimension and covering the reaction zone 6, and at this time, the shielding member 5 replaces the inner side wall of the reaction chamber 1 to be exposed in the reaction zone 6, so as to protect the inner side wall of the reaction chamber. The shielding member 5 is enclosed with the inner side wall of the reaction cavity 1 and the second gas injection mechanism 22 in an adaptive manner to form an annular cavity 53, the purging channel 51 is arranged on the shielding member 5, purging gas is injected into the annular cavity 53 through the second gas injection mechanism 22, and the purging gas in the annular cavity 53 flows into the reaction cavity 1 through the purging channel 51, so that the shielding member 5 is purged, deposition of reaction byproducts on the inner side wall of the shielding member 5 can be effectively inhibited or improved, the output efficiency and quality of equipment growth materials are improved, and the maintenance period of the reaction cavity 1 is prolonged.

In this embodiment, the thickness of the shutter 5 is greater than 5mm, so that the purge channel 51 formed in the shutter 5 can have a certain length, which can guide the purge gas flowing into the space region.

In this embodiment, the portion of the shielding member 5 located in the space region is substantially surrounded in a horn-like structure having a small upper part and a large lower part. The part of the shielding member 5 located in the space region may be configured as an inclined surface, an arc surface, a curved surface, inclined surfaces with different inclination angles, a combination surface of the inclined surface and the arc surface, or a combination surface of the inclined surface and the curved surface. By adopting the shielding pieces 5 with different shapes, the distribution of the purge gas in the space area can be more finely matched with the size proportion of the reaction cavity 1, the process, the gas flow conditions and the like, and the gas flow stability in the reaction cavity 1 is further improved.

In some embodiments, the shape of the shutter 5 is such that the line between the two end points of the axial section line of the spatial region (CD segment as shown in fig. 1) makes an angle α with the axis of the rotary shaft 4, said α satisfying: the portion of the shield 5 located in the space region is formed to be substantially inclined, and the purge passage 51 in the shield 5 can be formed to have a predetermined directivity, so that the flow rate of the purge gas can be formed to have a predetermined directivity. The magnitude of the angle alpha is coupled by the height H of the reaction zone 6, the dimension L of the gas injection mechanism 2, and the vapor deposition process conditions (e.g., temperature, pressure, gas flow, rotational speed, etc.).

In this embodiment, the shielding member 5 includes a first side 521 adjacent to the inner sidewall of the reaction chamber 1 and a second side 522 distant from the inner sidewall of the reaction chamber 1, the purge passage 51 penetrates from the first side 521 to the second side 522, and the purge passage 51 does not protrude beyond the second side 522. If the purge channel 51 extends beyond the second side 522 into the reaction zone 6, the flow of the reaction gas is blocked, which becomes a source of local turbulence.

In this embodiment, the purge channel 51 has a shape including any one of a tube shape and a slit section. Fig. 2 shows a case where the purge passage 51 is tubular in shape, and fig. 3 shows a case where the purge passage 51 is slit-shaped. The purge channel 51 may also be shaped as a combination of tubular and slit segments. The tubular purge channel 51 is adopted, so that the processing of the shielding piece 5 is facilitated, and purge channels 51 with different air guide directions are easily obtained. And the purge passage 51 of the slit section can increase the purge area of the shutter 5.

In this embodiment, the purge passage 51 has an inner diameter of 0.2-2mm.

In this embodiment, the inner diameter of the air outlet formed on the second side 522 by the purge passage 51 is equal to or greater than the inner diameter of the air inlet formed on the first side 521 by the purge passage 51. That is, the inner diameter is unchanged from the air inlet of the purge channel 51 to the air outlet of the purge channel 51, or the inner diameter of the air outlet of the purge channel 51 is larger than the inner diameter of the air inlet of the purge channel 51. If the inner diameter of the air outlet of the purge channel 51 is larger, the area between the air outlets of the adjacent purge channels 51 can be reduced, and the purge area is increased, so that the adhesion of reaction byproducts on the shielding piece 5 is reduced, and further, in this case, the arrangement of the purge channels 51 on the shielding piece 5 can be more sparse, so that the processing difficulty of the shielding piece 5 is reduced, and the cost is reduced.

Referring to fig. 4 and 5, in some embodiments, the purge passage 51 includes a first passage 511 and a second passage 512 communicating with the first passage 511, and an inner diameter of the second passage 512 is gradually increased and is larger than an inner diameter of the first passage 511. Wherein the second channel 512 is in communication with the spatial region. In a further embodiment, the length of the first channel 511 is greater than the length of the second channel 512 in the direction along the centre line of the purge channel 51, wherein the first channel 511 guides the purge gas and the second channel 512 flares to increase the purge area of the purge gas on the shield 5. Preferably, the length of the first channel 511 is greater than or equal to 2 times the length of the second channel 512, so as to ensure the air guiding effect of the first channel 511.

In this embodiment, the sum of the areas of the air outlets of the purge channel 51 formed on the second side 522 is 30% or more of the area of the second side 522, so as to ensure a purge area, and minimize the adhesion of reaction byproducts on the shielding member 5.

In the present embodiment, referring to fig. 1 to 5, the purge passage 51 includes a vertical purge gas flow passage having a center line parallel to the axis of the rotary shaft 4 such that the gas flow velocity of the purge gas introduced into the space region includes only an axial component.

It should be noted that, in the reaction chamber 1, the first gas injection mechanism 21 is disposed opposite to the carrier plate 3, and the first gas injection mechanism 21 is disposed at an upper portion and the carrier plate 3 is disposed at a lower portion, preferably, the axis of the reaction chamber 1 coincides with the axis of the rotating shaft 4, that is, the reaction chamber 1 is a vertical flow chamber, so by designing the direction in which the purge passage 51 penetrates the shielding member 5, the vertical purge gas flow passage is formed, and the direction in which the purge gas flows into the reaction chamber 1 is downward along the axis direction of the reaction chamber 1, that is, the gas flow velocity of the purge gas flowing into the reaction chamber 1 includes only an axial component. The design can ensure that the purge gas does not generate extra disturbance on the gas in the reaction zone 6, effectively inhibit or improve the deposition of reaction byproducts on the inner side wall of the shielding piece 5 and simultaneously reduce and inhibit the generation of vortex near the inner side wall of the shielding piece 5.

In this embodiment, the shutter 5 surrounds the carrier plate 3, and the distribution range of the purge passages 51 on the shutter 5 satisfies: the purge passage 51 at the lowermost end of the shutter 5 forms a purge gas outlet surface not higher than the bearing surface of the bearing plate 3. Further, the distribution of the purge channels 51 over the shutter 5 also covers at least part of the area comprised from the first gas injection means 21 to the bearing surface of the carrier plate 3. Preferably, the purge channels 51 are distributed on the shutter 5 from the first gas injection mechanism 21 to the region comprised by the bearing surface of the bearing plate 3, so as to ensure the maximum purge area. It is necessary that the distance between the purge gas outlet surface formed by the purge channel 51 located at the uppermost end of the shutter 5 and the outlet surface from which the reaction gas is ejected from the first gas injection mechanism 21 is smaller as the flow field of the reaction gas which does not affect the outlet from the edge of the first gas injection mechanism 21 is smaller. Defining a distance H between a purge gas outlet surface formed by the uppermost purge channel 51 and an outlet surface of the reaction gas sprayed from the first gas injection mechanism 21, and defining a distance H between an outlet surface of the reaction gas sprayed from the first gas injection mechanism 21 and a bearing surface of the bearing plate 3, wherein the distance H satisfies the following conditions: h is less than or equal to 0.25H. This allows the space above the carrier plate 3 to be kept as little as possible free of unswept areas, minimizing the likelihood of reaction by-products adhering to the shield 5.

In some embodiments, the radial distance d between the edge of the carrier disc 3 and the shutter 5 is such that: d is more than or equal to 0.1H and less than or equal to H, wherein H is defined as the distance between the gas outlet surface of the reaction gas sprayed out from the first gas injection mechanism 21 and the bearing surface of the bearing disc 3. If d is too small, the exhaust of the gas in the reaction chamber 1 is not facilitated, and if d is too large, the gas is wasted and the utilization rate of the reaction gas is not high.

In this embodiment, the purge passages 51 are circumferentially distributed in the shutter 5, and a plurality of layers of the purge passages 51 are formed along the axial direction of the rotary shaft 4.

In some embodiments, the air outlets formed by adjacent circumferential purge channels 51 on the second side 522 are aligned or offset. Fig. 2 shows a case where the air outlets are arranged in a staggered manner.

Further, the inner diameters of the purge channels 51 of the layers are the same, or the inner diameters of the purge channels 51 of the layers gradually increase from the top of the reaction chamber 1 to the direction of the carrying disc 3.

In some embodiments, the number of purge channels 51 is the same for each layer, or, from the top of the reaction chamber 1 to the direction of the carrier plate 3, the number of purge channels 51 at the lowest layer is multiple than the number of purge channels 51 at the uppermost layer.

Illustratively, 6 circles of the purge channels 51 are disposed on the shielding member 5 along the axial direction of the rotating shaft 4, the number of the purge channels 51 on each circle is the same, or, assuming that the number of the purge channels 51 on the circle closest to the first gas injection mechanism 21 is N, the number of the purge channels 51 on each circle is N, 2N, 3N, 4N, 5N, 6N, or may be N, N, 2N, 3N, or N, N, N, 3N, and so on, and other distribution manners are not repeated herein, where the specific number distribution of the purge channels 51 is determined by the distribution situation of the purge gas required by the process.

Thereby, the distribution of the purge gas from top to bottom of the shutter 5 can be finely adjusted by the size of the purge channel 51 and the distribution density on the shutter 5, and the maximum purge area is ensured without affecting the flow field of the reaction chamber.

In some specific embodiments, with continued reference to fig. 1, the gas outlet surface of the first gas injection mechanism 21 and the gas outlet surface of the second gas injection mechanism 22 are flat or substantially flat, the shielding member 5 is an inclined surface, the space region is surrounded by a circular truncated cone structure, the radial dimension from the top of the shielding member 5 to the inner side wall of the reaction chamber 1 is equivalent to the dimension of the second gas injection mechanism 22, when vapor deposition is performed in the reaction chamber 1, the top of the shielding member 5 abuts against the second gas injection mechanism 22, and the top of the annular cavity 53 is the gas outlet surface of the second gas injection mechanism 22. The first gas injection mechanism 21 is used for delivering reaction gas into the space region, the second gas injection mechanism 22 is used for delivering purge gas into the annular cavity 53, and the purge gas is introduced into the space region through the purge channel 51 after entering the annular cavity 53, so as to avoid deposition of reaction byproducts on the inner side wall of the shielding member 5.

In other specific embodiments, since the shutter 5 has a certain wall thickness, in order to allow purge gas to be ejected in a region closest to the first gas injection mechanism 21, see fig. 6, the shutter 5 is provided in a structure including a straight cylindrical portion and a flare portion. The radial dimension of the straight cylinder portion is equal to the dimension of the second gas injection mechanism 22, the horn portion is located at the lower end of the shielding member 5, the radial dimension of the horn portion is gradually increased from top to bottom, and the purge channels 51 are distributed in the horn portion. In order to match with the installation of the shielding member 5, the air outlet surface of the second air injection mechanism 22 is higher than the air outlet surface of the first air injection mechanism 21, so that an upward concave step exists between the air outlet surface of the second air injection mechanism 22 and the air outlet surface of the first air injection mechanism 21. When vapor deposition is performed in the reaction chamber 1, the straight barrel portion is adaptively inserted into the upward recessed step, so that the top end of the straight barrel portion is abutted against the second gas injection mechanism 22, the horn portion and the first gas injection mechanism 21 are matched to form the space region, the second gas injection mechanism 22 is used for conveying purge gas into the annular chamber 53, and the purge gas is introduced into the space region through the purge channel 51 after entering the annular chamber 53, so that deposition of reaction byproducts on the inner side wall of the shielding member 5 is avoided.

Example two

Referring to fig. 7 to 8, the present embodiment provides a vapor deposition apparatus, which is the same as the first embodiment and will not be described again, and which is different from the first embodiment in that: in the first embodiment, the purge passage 51 is a vertical purge gas passage, that is, the center line of the purge passage 51 is parallel to the axis of the rotary shaft 4, so that the gas flow rate of the purge gas introduced into the space region includes only an axial component. In this embodiment, the purge passage 51 is not a vertical purge flow passage, but a rotating purge flow passage, which extends through the shutter 5 in a circumferential direction at an angle β, so that the flow velocity of the purge gas introduced into the space region includes an axial component and a tangential component, thereby forming a rotating purge flow, and the rotating purge flow passages are circumferentially arranged on the shutter 5 so that the rotating direction of the rotating purge flow is the same as the rotating direction of the rotating shaft 4. In order to avoid that the flow field in the reaction chamber is affected by the purge gas introduced into the reaction chamber, the angle β should be such that the flow velocity of the purge gas introduced into the space region includes only an axial component and a tangential component, and does not include a radial component, i.e., the direction of the purge passage 51 cannot be inclined toward the axis of the rotary shaft 4 in the radial direction of the reaction chamber 1.

Wherein beta is: a tangential plane to the rotation axis 4 defining a bottom centroid of an air outlet formed on the second side 522 through the purge passage 51 is a tangential plane to which the bottom centroid is located, a center line of the purge passage 51 is located in the tangential plane to which the bottom centroid is located, and an angle β is formed between the center line of the purge passage 51 and the axis of the rotation axis 4, the β being not equal to 0 °.

In this embodiment, the rotating purge gas flow is formed by spraying the purge gas near the rotating carrying disk 3 by using the rotating purge gas flow channel, and the direction of the rotating purge gas flow is consistent with the rotating direction of the carrying disk 3 in the vapor deposition apparatus in the reaction process, and the rotating purge gas flow has tangential speed and momentum, so that the flow impact mixing and streamline steering process of the flow field in the reaction cavity 1 in the edge area is smoother, thereby inhibiting the generation of vortex in the reaction cavity 1, and the laminar flow characteristic of the flow field in the reaction cavity 1 is more stable.

In some embodiments, the angle β of the rotating purge gas flow channel at the lowermost level of the shield 5 is greater than or equal to the angle β of the rotating purge gas flow channel at the uppermost level of the shield 5, or increases gradually from top to bottom along the shield 5. In this way, the impact on the flow field at the upper part of the reaction cavity 1 can be reduced while the flow impact mixing and streamline steering process of the flow field in the reaction cavity 1 at the edge area is more stable.

Preferably, the ratio of the tangential component to the axial component of the flow velocity of the purge gas is not too large, which would have a large influence on the flow in the reaction zone and would be detrimental to the uniform injection of the reaction gas into the reaction chamber 1. Preferably, 0 DEG < beta < 60 deg.

Example III

The present embodiment provides a vapor deposition apparatus, which is different from the first and second embodiments in that the purge passage 51 is a combination of a vertical purge flow passage and a rotational purge flow passage.

It should be noted that, since the carrier plate 3 rotates at a high speed, the region near the carrier plate 3 only needs to rotate the purge gas flow to reduce the vortex, it is preferable to provide the rotating purge gas flow passage on the shield 5 near the circumferential region of the carrier plate 3. In addition, since the reaction chamber 1 of the vapor deposition apparatus is a vertical flow chamber, in order to avoid affecting the flow field of the reaction chamber 1, the purge channels 51 in other areas on the shielding member 5 are all arranged as vertical purge gas flow channels except for the purge channels 51 in the circumferential area near the carrier plate 3.

Example IV

The present embodiment provides a vapor deposition apparatus having a structure similar to that of any one of the first to third embodiments. In this embodiment, referring to fig. 1, 2 and 6, the purge gas in the annular chamber 53 is uniformly controlled, the same purge gas is introduced into the annular chamber 53, and the purge gas enters the annular chamber 53 and is uniformly distributed, and then is discharged through each purge channel 51 on the shielding member 5. The kind and composition of the purge gas delivered by the annular chamber 53 into the purge channel 51 are the same. It should be noted that the same purge gas mentioned above does not refer to a single gas species, but refers to the same gas that is fed into the reaction chamber 1 from each of the purge channels 51, and may be a single gas or a mixed gas, and the purge gases do not react with each other, or the purge gases react with each other but do not generate the target product. For example, for group III-V MOCVD, the purge gas may include one or more of H2, N2, and an inert gas, and may also be a group V hydride source gas and a carrier gas.

A control unit (not shown), such as a valve, a mass flow controller, a pressure controller, etc., is further provided before the second gas injection mechanism 22 introduces the purge gas into the annular chamber 53, and the control unit uniformly regulates and controls the purge gas in the annular chamber 53, so that the types and components of the purge gas in the purge channel 51 are the same.

Example five

The difference between the present embodiment and the fourth embodiment is that, referring to fig. 9, at least one blocking member 54 is disposed on the shielding member 5, the blocking member 54 is a cylinder coaxial with the reaction chamber 1, the upper end of the blocking member 54 abuts against the second gas injection mechanism 22, the lower end of the blocking member 54 abuts against the first side 521 of the shielding member 5, the blocking member 54 separates the annular chamber 53 into a plurality of sub annular chambers 531 from inside to outside, and the air outlets of the second gas injection mechanism 22 are in one-to-one correspondence with the sub annular chambers 531, so that the purge gas delivered by at least two sub annular chambers 531 is independently regulated and controlled.

In some embodiments, when the number of the blocking members 54 is plural, the blocking members 54 are coaxially distributed from inside to outside in the radial direction of the reaction chamber 1, and the height of the blocking members 54 in the axial direction of the reaction chamber 1 is gradually increased from inside to outside.

The blocking member 54 divides the annular cavity 53 into a plurality of sub-annular cavities 531 from inside to outside, and accordingly, the blocking member 54 divides the shielding member 5 into a plurality of sub-areas from top to bottom, a plurality of purge channels 51 are correspondingly disposed in each sub-area, and a control unit (not shown) such as a valve, a mass flow controller, a pressure controller, etc. is further disposed before the second gas injection mechanism 22 injects purge gas into the annular cavity 53, and the purge gas delivered by each sub-annular cavity 531 is individually regulated and controlled by the control unit, so that the purge gas delivered by the purge channels 51 in at least two sub-areas is independently regulated and controlled.

Further, the flow rate of the purge gas supplied in each of the sub annular chambers 531 is equal, or the flow rate of the purge gas supplied in each of the sub annular chambers from inside to outside is gradually increased. In this way, the flow rate of the purge gas introduced into the space region through the purge passage 51 in each of the sub-regions is made equal from top to bottom, or the flow rate of the purge gas introduced into the space region through the purge passage 51 in each of the sub-regions from top to bottom is gradually increased.

In some embodiments, the average molecular weight of the purge gas delivered in each of the sub-annular chambers 531 is equal, or the average molecular weight of the purge gas delivered in each of the sub-annular chambers 531 gradually increases from inside to outside. In this way, the average molecular weight of the purge gas introduced into the space region through the purge passage 51 in each of the sub-regions is made equal from top to bottom, or the average molecular weight of the purge gas introduced into the space region through the purge passage 51 in each of the sub-regions from top to bottom is gradually increased.

In this embodiment, the baffle member 54 is disposed on the shielding member 5 to divide the annular cavity 53 into a plurality of sub annular cavities 531 from inside to outside, so that the purge gas is more properly distributed after entering the reaction zone, and the distribution of the purge gas from top to bottom of the shielding member 5 is further finely adjusted, so that the size ratio of the reaction cavity 1, the process, the gas flow conditions, and the like can be more finely matched, and the gas flow stability in the reaction cavity 1 is greatly improved.

Example six

The present embodiment provides a vapor deposition apparatus, which is similar to any one of the first to fifth embodiments, and differs in that, referring to fig. 10 and 11, in this embodiment, an opening 11 is provided on a side wall of the reaction chamber 1, the opening 11 is used for placing or taking out the carrier tray 3, a lifting mechanism (not shown in the drawing) is located on a top wall or a bottom wall of the reaction chamber, the lifting mechanism is connected with the shielding member 5, and the lifting mechanism drives the shielding member 5 to move up and down along an axis direction of the rotation shaft 4, so that the shielding member 5 shields the opening 11 or exposes the opening 11, thereby facilitating the taking and placing of the carrier tray 3.

In this embodiment, when the carrier plate 3 needs to be put in or taken out, referring to fig. 10, the lifting mechanism drives the shielding member 5 to move downward along the axial direction of the rotating shaft 4, so that the opening 11 is exposed, and the carrier plate 3 can be taken out through the opening 11. When vapor deposition is required in the reaction chamber 1, referring to fig. 11, the lifting mechanism drives the shielding member 5 to move upwards along the axial direction of the rotating shaft 4, so that the shielding member 5 is abutted against the second gas injection mechanism 22, at this time, the annular chamber 53 is adaptively surrounded between the shielding member 5 and the inner side wall of the reaction chamber 1 and between the shielding member 5 and the second gas injection mechanism 22, the space area is adaptively surrounded by the shielding member 5 and the first gas injection mechanism 21, the reaction area is covered by the space area, the opening 11 is shielded by the shielding member 5, the first gas injection mechanism 21 injects the reaction gas into the space area, at this time, deposition reaction can be performed in the reaction chamber 1, the second gas injection mechanism 22 injects the purge gas into the annular chamber 53, and the purge gas enters the space area through the purge channel 51, so as to purge the shielding member 5.

In one embodiment, referring to fig. 1, when the gas outlet surface of the first gas injection mechanism 21 and the gas outlet surface of the second gas injection mechanism 22 are equal or substantially equal, the shielding member 5 is an inclined surface, the space region is surrounded by a circular truncated cone structure, and the radial dimension between the top of the shielding member 5 and the inner side wall of the reaction chamber 1 is equal to the dimension of the second gas injection mechanism 22.

When vapor deposition is required to be performed in the reaction chamber 1, the lifting mechanism moves upwards to abut the top of the shielding member 5 with the second gas injection mechanism 22, the top of the annular chamber 53, that is, the gas outlet surface of the second gas injection mechanism 22, and the opening 11 is shielded by the shielding member 5. The first gas injection means 21 is then used to deliver a reactive gas to the region of space and the second gas injection means 22 is used to deliver a purge gas into the annular chamber 53, which purge gas is introduced into the region of space via the purge channel 51 after entering the annular chamber 53 to inhibit or avoid adhesion of reaction by-products to the inner side walls of the shield 5.

When the carrier plate 3 needs to be put in or taken out, the lifting mechanism drives the shielding member 5 to move downwards along the axial direction of the rotating shaft 4, the second gas injection mechanism 22 is separated from the top end of the shielding member 5, and the carrier plate is further lowered until the opening 11 is exposed, so that the carrier plate 3 can be taken out through the opening 11.

In another embodiment, referring to fig. 10 and 11, since the shutter 5 has a certain wall thickness, the shutter 5 is provided in a structure including a straight cylindrical portion and a flare portion in order to make the purge gas be ejected in a region closest to the first gas injection mechanism 21. The radial dimension of the straight cylinder portion is equal to the dimension of the second gas injection mechanism 22, the horn portion is located at the lower end of the shielding member 5, the radial dimension of the horn portion is gradually increased from top to bottom, and the purge channels 51 are distributed in the horn portion. Suitably, in order to match the installation of the shutter 5, the air outlet surface of the second air injection mechanism 22 is higher than the air outlet surface of the first air injection mechanism 21, so that an upwardly concave step exists between the air outlet surface of the second air injection mechanism 22 and the air outlet surface of the first air injection mechanism 21.

When vapor deposition is required in the reaction chamber 1, the lifting mechanism moves upwards, the straight cylinder portion is inserted into the upward concave step in an adaptive manner to be abutted against the second gas injection mechanism 22, the opening 11 is shielded by the shielding piece 5, and the horn portion and the first gas injection mechanism 21 are matched to form the space region. The first gas injection means 21 is then used to deliver a reactive gas into the spatial region and the second gas injection means 22 is used to deliver a purge gas into the annular chamber 53.

When the carrier plate 3 needs to be put in or taken out, the lifting mechanism drives the shielding member 5 to move downwards along the axial direction of the rotating shaft 4, the straight barrel part leaves the upward concave step, the second gas injection mechanism 22 is separated from the shielding member 5, and the lifting mechanism drives the shielding member 5 to continuously descend until the opening 11 is exposed, so that the carrier plate 3 can be taken out through the opening 11.

While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims (17)

1. A vapor deposition apparatus, comprising:

a reaction chamber;

the first gas injection mechanism is positioned in the middle area of the top of the reaction cavity and is used for injecting reaction gas into the reaction cavity;

the second gas injection mechanism is positioned in the peripheral area at the top of the reaction cavity and surrounds the first gas injection mechanism;

The bearing plate is positioned in the reaction cavity and is opposite to the first gas injection mechanism, and a reaction area is formed above the bearing plate;

the rotating shaft is connected with the bearing disc and drives the bearing disc to rotate during vapor deposition;

the shielding piece is positioned in the reaction cavity and surrounds the inner side wall of the reaction cavity, an annular cavity is formed by the shielding piece, the inner side wall of the reaction cavity and the second gas injection mechanism in an adaptive manner during vapor deposition, and purge gas is injected into the annular cavity by the second gas injection mechanism; the shielding piece and the first gas injection mechanism are adaptively surrounded to form a space area, the radial size of the space area is gradually increased from top to bottom, and the outer diameter of the bottommost end of the shielding piece is adaptive to the inner diameter of the reaction cavity;

the purging channels are distributed on the shielding piece and penetrate through the shielding piece, and the purging channels conduct the annular cavity with the space area so as to introduce purging gas into the space area.

2. The vapor deposition apparatus according to claim 1, wherein the purge passage includes a vertical purge gas flow passage, a center line of which is parallel to an axial direction of the rotation shaft, such that a gas flow velocity of the purge gas introduced into the space region includes only an axial component.

3. The vapor deposition apparatus according to claim 2, wherein the purge passage further comprises a rotating purge gas flow passage that is inclined circumferentially through the shutter at an angle β such that a gas flow velocity of the purge gas introduced into the space region includes only an axial component and a tangential component, thereby forming a rotating purge gas flow, the rotating purge gas flow passage being circumferentially arranged on the shutter such that a rotation direction of the rotating purge gas flow is the same as a rotation direction of the rotating shaft.

4. A vapor deposition apparatus according to claim 3, wherein the angle β of the rotary purge gas flow channel located at the lowermost layer of the shutter is equal to or greater than the angle β of the rotary purge gas flow channel located at the uppermost layer of the shutter, or the angle β of the rotary purge gas flow channel gradually increases from top to bottom along the shutter.

5. A vapor deposition apparatus according to claim 3, wherein the rotating purge gas flow channel is located on the shield in a circumferential region adjacent the carrier plate.

6. The vapor deposition apparatus according to claim 1, wherein the shield includes a first side surface near an inner side wall of the reaction chamber and a second side surface distant from the inner side wall of the reaction chamber, the purge passage penetrates from the first side surface to the second side surface without exceeding the second side surface, and an inner diameter of an air outlet formed by the purge passage on the second side surface is equal to or larger than an inner diameter of an air inlet formed by the purge passage on the first side surface.

7. The vapor deposition apparatus according to claim 1, wherein the purge passages are circumferentially distributed in the shutter, and a plurality of layers of the purge passages are formed in an axial direction of the rotation shaft.

8. The vapor deposition apparatus according to claim 7, wherein a distance between a purge gas outlet surface formed by the purge passage of the uppermost layer and the first gas injection mechanism outlet surface is defined as H from a top of the reaction chamber to the direction of the carrier plate, and a distance between the first gas injection mechanism outlet surface and the carrier surface of the carrier plate is defined as H, satisfying: h is less than or equal to 0.25H.

9. The vapor deposition apparatus according to claim 8, wherein the purge passage at the lowermost layer forms a purge gas outlet surface not higher than a bearing surface of the carrier tray.

10. The vapor deposition apparatus according to claim 9, wherein a radial distance d between an edge of the carrier tray and the shield is defined as: d is more than or equal to 0.1 and less than or equal to H.

11. The vapor deposition apparatus of claim 1, wherein the gas outlet face of the second gas injection mechanism is higher than the gas outlet face of the first gas injection mechanism such that an upwardly concave step exists between the gas outlet face of the second gas injection mechanism and the gas outlet face of the first gas injection mechanism.

12. The vapor deposition apparatus according to claim 11, wherein the shutter includes a straight cylindrical portion having a uniform radial dimension at an upper end and a flare portion having a gradually increasing radial dimension from top to bottom at a lower end, the purge passages being distributed in the flare portion, and the straight cylindrical portion being fittingly inserted into the upwardly recessed step when vapor deposition is performed in the reaction chamber.

13. The vapor deposition apparatus according to claim 12, wherein at least one blocking member is provided on the shielding member, the blocking member is a cylinder coaxial with the reaction chamber, an upper end of the blocking member abuts against the second gas injection mechanism, a lower end of the blocking member abuts against the first side surface of the shielding member, the blocking member divides the annular chamber into a plurality of sub annular chambers from inside to outside, and an air outlet of the second gas injection mechanism is in one-to-one communication with the sub annular chambers, so that the purge gas conveyed by at least two sub annular chambers is independently regulated.

14. The vapor deposition apparatus according to claim 13, wherein a flow rate of the purge gas supplied in each of the sub-annular chambers is equal or a flow rate of the purge gas supplied in each of the sub-annular chambers from inside to outside is gradually increased.

15. The vapor deposition apparatus according to claim 14, wherein an average molecular weight of the purge gas supplied in each of the sub-annular chambers is equal, or an average molecular weight of the purge gas supplied in each of the sub-annular chambers from inside to outside is gradually increased.

16. The vapor deposition apparatus according to claim 12, wherein the side wall of the reaction chamber is provided with an opening for putting in or taking out the carrier tray, a lifting mechanism is provided on the top wall or the bottom wall of the reaction chamber, the lifting mechanism is connected with the shielding member, and the lifting mechanism drives the shielding member to move up and down along the axis direction of the rotating shaft so that the shielding member shields the opening or exposes the opening.

17. The vapor deposition apparatus according to claim 16, wherein when the carrier tray is required to be put in or taken out, the elevating mechanism drives the shutter to move downward in the axial direction of the rotation shaft so that the opening is exposed, and the straight tube portion is separated from the upward recessed step;

when vapor deposition is carried out in the reaction cavity, the lifting mechanism drives the shielding piece to move upwards along the axial direction of the rotating shaft, so that the straight barrel part is adaptively inserted into the upward concave step, the top end of the shielding piece is abutted to the second gas injection mechanism, and the opening is shielded by the shielding piece.