CN117926206A - Shielding device with purging function and vapor deposition equipment - Google Patents

Abstract

The invention provides a shielding device with purging and vapor deposition equipment, wherein the shielding device comprises a shielding piece, is arranged around the inner side wall of a reaction cavity and is provided with a separation wall, the separation wall comprises a first side surface and a second side surface, the separation wall comprises a straight barrel part positioned at the upper end and a horn part positioned at the lower end, the radial dimension of the straight barrel part is consistent, the radial dimension of the horn part is gradually increased from top to bottom, the horn part is enclosed into a space area, the space area covers the reaction area, and the outer diameter of the bottommost end of the shielding piece is matched with the inner diameter of the reaction cavity; the gas guide channels are distributed in the horn part and used for injecting purge gas into the space area, and the gas guide channels penetrate through the separation wall from the first side face to the second side face in a certain direction, so that the component of the gas flow speed of the purge gas injected into the space area in the central axis direction of the reaction cavity is not 0. The shielding device provided by the invention can improve the output efficiency and quality of the growth material of the vapor deposition equipment and prolong the maintenance period of the reaction cavity.

Description

Shielding device with purging function and vapor deposition equipment

Technical Field

The invention relates to the technical field of semiconductor equipment, in particular to a shielding device with a purging function and vapor deposition equipment.

Background

Vapor deposition on semiconductor wafers to grow semiconductor thin films is a very important module in semiconductor manufacturing processes. Typical vapor deposition apparatuses mainly include chemical vapor deposition apparatuses, physical vapor deposition apparatuses, plasma-enhanced vapor deposition apparatuses, metal Organic Chemical Vapor Deposition (MOCVD) apparatuses, and the like. Commercially, these devices are used to fabricate solid state (semiconductor) microelectronic, optical and optoelectronic devices, as well as other electronic/optoelectronic materials and devices.

In general, in the vapor deposition process, a susceptor is disposed in a reaction chamber, and a wafer is placed on the susceptor. Process gases are introduced into the reaction chamber through a gas inlet device (e.g., a showerhead) and delivered to the surface of one or more wafers placed on a carrier plate for processing, thereby growing films of a particular crystal structure. Meanwhile, in order to realize uniform deposition, the bearing disc rotates at a high speed under the drive of the rotating shaft. Because the carrier plate drags the gas to rotate, gas flow vortex is easy to generate near the side wall of the reaction zone (namely, near the edge of the carrier plate in the gas inflow direction), and particularly, the gas flow vortex is obvious under the condition of high rotating speed (the rotating speed is more than or equal to 200 RPM) of the carrier plate.

In the presence of a certain vortex of gas, the inner side walls of the reaction chamber may have a relatively severe deposition of reaction byproducts, and even in the absence of a vortex of gas, the inner side walls of the reaction chamber may have a small deposition of reaction byproducts due to diffusion of the reactants. These reaction byproducts can present several problems:

1. The presence of reaction byproducts can become a source of particle defects during the growth of the material, thereby reducing the yield of the grown material.

2. The reaction by-products are generally solid in a polycrystalline or amorphous form, and the reflectivity of the side wall of the reaction zone can change gradually along with the progress of growth, so that the temperature field stability of the reaction zone is affected.

3. The generation and accumulation of reaction byproducts also force the cleaning and maintenance frequency of the reaction cavity to be improved, and the effective growth productivity of the reaction cavity is reduced, thereby increasing the use cost.

Disclosure of Invention

The invention aims to provide a shielding device with a purging function and vapor deposition equipment, which can improve the output efficiency and quality of equipment growth materials and prolong the maintenance period of a reaction cavity.

In order to achieve the above object, the present invention provides a shielding device with purge, disposed in a reaction chamber having a cylindrical shape, comprising:

The shielding piece is arranged around the inner side wall of the reaction cavity and provided with a separation wall close to one side of a reaction zone of the reaction cavity, the separation wall comprises a first side face close to the inner side wall of the reaction cavity and a second side face far away from the inner side wall of the reaction cavity, the separation wall comprises a straight barrel part positioned at the upper end and a horn part positioned at the lower end, the radial dimension of the straight barrel part is consistent, the radial dimension of the horn part is gradually increased from top to bottom, the horn part is enclosed into a space area, the space area covers the reaction zone, and the outer diameter of the bottommost end of the shielding piece is matched with the inner diameter of the reaction cavity;

The air guide channels are distributed in the horn part and used for injecting purge gas into the space area, and the air guide channels penetrate through the separation wall from the first side face to the second side face in a certain direction, so that the component of the velocity of the purge gas injected into the space area in the direction of the central axis of the reaction cavity is not 0.

In some embodiments, the air guide channel penetrates from the first side surface to the second side surface and does not exceed the second side surface, and the inner diameter of an air outlet formed on the second side surface by the air guide channel is not smaller than the inner diameter of an air inlet formed on the first side surface by the air guide channel.

In some embodiments, the sum of the areas of the air outlets formed by the air guide channels on the second side surface is not less than 30% of the area of the second side surface.

In some embodiments, the air guide channel includes a first channel and a second channel in communication with the first channel, the second channel having an inner diameter that gradually increases and is greater than the inner diameter of the first channel.

In some embodiments, the length of the first channel is greater than the length of the second channel in a direction along a centerline of the air guide channel.

In some embodiments, the length of the first channel is greater than or equal to 2 times the length of the second channel.

In some embodiments, the thickness of the dividing wall is greater than 5mm.

In some embodiments, the air guide channel has an inner diameter of 0.2-2 mm.

In some embodiments, the centerline of the gas guide channel is parallel to the central axis of the reaction chamber.

In some embodiments, the axial section line of the horn is any one of a straight line, an arc line, a curve, or a combination of a straight line and an arc line, or a combination of a straight line and a curve line.

In some embodiments, an angle α is formed between a line between upper and lower end points of an axial section line of the horn portion and a central axis of the reaction chamber, the α satisfying: a is more than 0 and less than or equal to 45 degrees.

In some embodiments, the shield comprises an annular chamber comprising an outer wall adjacent to the inner side wall of the reaction chamber and an inner wall adjacent to the reaction zone, the inner wall of the annular chamber being formed as the dividing wall, the outer wall of the annular chamber being adapted to the inner side wall of the reaction chamber, the annular chamber being provided with a purge gas inlet.

In a second aspect, the present invention provides a vapor deposition apparatus comprising:

a reaction chamber;

The shielding device with the purging function;

The first gas injection mechanism is positioned in the middle area of the top of the reaction cavity and is used for injecting reaction gas into the reaction cavity;

The second gas injection mechanism is positioned in the peripheral area at the top of the reaction cavity and surrounds the first gas injection mechanism, an upward concave step is arranged between the gas outlet surface of the second gas injection mechanism and the gas outlet surface of the first gas injection mechanism, when vapor deposition is carried out in the reaction cavity, the straight barrel part is adaptively inserted into the upward concave step, so that the horn part and the first gas injection mechanism form the space area, and the second gas injection mechanism is communicated with the first side surface side to convey purge gas to the gas guide channel;

the bearing disc is positioned in the reaction cavity and is arranged opposite to the first gas injection mechanism;

And the rotating shaft is connected with the bearing disc and drives the bearing disc to rotate during vapor deposition.

In some embodiments, the air guide channels are circumferentially distributed in the horn portion, and a plurality of layers of the air guide channels are formed along the axial direction of the rotating shaft.

In some embodiments, a distance between a purge gas outlet surface formed by the uppermost layer of the gas guide channels and the first gas injection mechanism outlet surface is defined as H, and a distance between the first gas injection mechanism outlet surface and the bearing surface of the bearing disk is defined as H, so that: h is less than or equal to 0.25H.

In some embodiments, the purge gas outlet surface formed by the lowermost gas guide channel is not higher than the bearing surface of the bearing disc.

In some embodiments, the inner diameters of the air guide channels of the layers are the same, or the inner diameters of the air guide channels gradually increase from top to bottom.

In some embodiments, the number of air guide channels of each layer is the same, or the number of air guide channels of the lowermost layer is a multiple of the number of air guide channels of the uppermost layer.

In some embodiments, at least one blocking member is arranged on the shielding member, the blocking member is a cylinder body coaxial with the reaction cavity, the blocking member divides the horn part into a plurality of independent subareas from top to bottom in the circumferential direction of the horn part, the air guide channels are positioned in the plurality of independent subareas, and the purge gas conveyed by the air guide channels in at least two subareas is independently regulated and controlled.

In some embodiments, the flow rate of the purge gas delivered by the gas guide channel in each of the subareas is equal, or the flow rate of the purge gas delivered by the gas guide channel in each of the subareas from top to bottom is gradually increased.

In some embodiments, the average molecular weight of the purge gas delivered by the gas guide channel in each of the sub-regions is equal, or the average molecular weight of the purge gas delivered by the gas guide channel in each of the sub-regions gradually increases from top to bottom.

In some embodiments, an opening is formed in a side wall of the reaction chamber, the opening is used for placing or taking out the carrying disc, a lifting mechanism is located on the top wall or the bottom wall of the reaction chamber, the lifting mechanism is connected with the shielding piece, and the lifting mechanism drives the shielding piece to move up and down along the axial direction of the rotating shaft, so that the shielding piece shields the opening or exposes the opening.

In some embodiments, when the carrier tray needs to be put in or taken out, the lifting mechanism drives the shielding piece to move downwards along the axial direction of the rotating shaft, so that the opening is exposed, and at the moment, the straight barrel part leaves the upward concave step;

When vapor deposition is carried out in the reaction cavity, the lifting mechanism drives the shielding piece to move upwards along the axial direction of the rotating shaft, so that the straight barrel part is adaptively inserted into the upward concave step, and the opening is shielded by the shielding piece.

Compared with the prior art, the shielding device with the purging and the vapor deposition equipment have the following beneficial effects:

According to the invention, the shielding device with the purging function is added on the inner side of the reaction cavity, the shielding device is provided with the separation wall close to one side of the reaction area of the reaction cavity, the separation wall comprises the straight barrel part positioned at the upper end and the horn part positioned at the lower end, the horn part is provided with the air guide channel, the purging gas is injected into the space area surrounded by the horn part, compared with the vapor deposition equipment without the shielding device, the separation wall of the shielding device can replace the inner side wall of the reaction cavity to be exposed in the reaction area, the inner side wall of the reaction cavity is protected, and the purging function can effectively inhibit or improve the deposition of reaction byproducts on the separation wall, so that the production efficiency and quality of growth materials of the vapor deposition equipment can be improved, and the service period of the shielding device can be prolonged, thereby prolonging the maintenance period of the reaction cavity.

According to the invention, the air guide channel is used for injecting the purge gas into the space area in a certain direction penetrating through the partition wall, so that the component of the velocity of the flow of the purge gas injected into the space area in the central axis direction of the reaction cavity is not 0, therefore, the disturbance of the flow in the reaction area can be reduced, the generation of vortex near the partition wall is reduced or inhibited, and the quality of the equipment growth material is further improved.

Drawings

FIG. 1 is a schematic perspective view of a shielding device with purge according to an embodiment of the present invention;

FIG. 2 is a schematic cross-sectional view of a shielding device with purge in a reaction chamber according to an embodiment of the present invention;

FIG. 3 is a schematic perspective view of a vent channel with a purging device according to another embodiment of the present invention;

FIG. 4 is a schematic cross-sectional view of an air duct of a shielding device with purge according to another embodiment of the present invention;

FIG. 5 is an enlarged view of FIG. 4 at A;

FIG. 6 is a schematic perspective view of a shielding device with purge according to another embodiment of the present invention;

FIG. 7 is a schematic cross-sectional view of a shielding device with purge in a reaction chamber according to another embodiment of the present invention;

FIG. 8 is a schematic perspective view of a shielding device with purge according to another embodiment of the present invention;

FIG. 9 is an enlarged view at B in FIG. 8;

FIG. 10 is a schematic perspective view of a view from an oblique top of a purged shielding apparatus with a barrier according to an embodiment of the present invention;

FIG. 11 is a schematic cross-sectional view of a vapor deposition apparatus according to an embodiment of the present invention when the opening of the sidewall of the reaction chamber is opened.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items. In the description of the present invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like indicate or are based on the orientation or positional relationship shown in the drawings, merely to facilitate describing the present invention and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.

Example 1

Referring to fig. 1 and 2, the shielding device with purging provided in this embodiment is disposed in a reaction chamber 1, and the cross section of the reaction chamber 1 is generally in a circular or quasi-circular structure. Wherein the shielding device with purge comprises a shielding member 5, the shielding member 5 is positioned in the reaction chamber 1 and is arranged around the inner side wall of the reaction chamber 1, and the shielding member 5 comprises a separation wall 52 close to one side of a reaction zone 6 of the reaction chamber 1. The partition wall 52 includes a first side 521 adjacent to the inner sidewall of the reaction chamber 1 and a second side 522 distant from the inner sidewall of the reaction chamber 1, at which time the shutter 5 is exposed in the reaction zone 6 instead of the inner sidewall of the reaction chamber 1, the second side 522, that is, the inner sidewall of the shutter 5, and reaction byproducts adhere to the second side 522 of the partition wall 52 when a deposition reaction is performed in the reaction chamber 1. Since the partition wall 52 has a certain wall thickness, in order to make the partition wall 52 have the largest purge area, referring to fig. 2, the partition wall 52 is configured to include a straight barrel portion 523 at an upper end and a flare portion 524 at a lower end, the radial dimensions of the straight barrel portion 523 are uniform, the radial dimensions of the flare portion 524 gradually increase from top to bottom, and the flare portion 524 is surrounded to form a space area, preferably, the space area covers the reaction zone 6. The height of the extension of the straight portion 523 is determined by the specific structure, the size ratio, the process, the gas flow conditions, etc. of the reaction chamber 1. The outer diameter of the lowermost end of the shielding member 5 is adapted to the inner diameter of the reaction chamber 1. Most importantly, a plurality of gas guide channels 51 are provided on the flare 524 to inject purge gas into the space region, and the gas guide channels 51 penetrate the partition wall 52 from the first side 521 to the second side 522 in a certain direction, so that the component of the flow velocity of the purge gas injected into the space region in the central axis direction of the reaction chamber 1 is not 0.

In this embodiment, by adding a shielding device with purging to the inner side of the reaction chamber 1, the shielding device includes a shielding member 5, the shielding member 5 surrounds the inner side wall of the reaction chamber 1 and has a partition wall 52 near one side of the reaction zone 6, the partition wall 52 includes a straight barrel portion 523 located at the upper end and a horn portion 524 located at the lower end, the horn portion 524 is further provided with an air guide channel 51, and purge gas is injected into a space region surrounded by the horn portion 524, compared with a vapor deposition apparatus not provided with the shielding device, the partition wall 52 of the shielding device can replace the inner side wall of the reaction chamber 1 to be exposed in the reaction zone 6, so as to protect the inner side wall of the reaction chamber 1, and the purging function can effectively inhibit or improve deposition of reaction byproducts on the partition wall 52, so that the output efficiency and quality of growth materials of the vapor deposition apparatus can be improved, and the service period of the shielding device can be prolonged, thereby prolonging the maintenance period of the reaction chamber 1. In addition, the gas guide passage 51 injects the purge gas into the space region so as to penetrate the partition wall 52 in a certain direction, so that the component of the gas flow velocity of the purge gas injected into the space region in the central axis direction of the reaction chamber 1 is not 0, and therefore, disturbance of the gas flow in the reaction region 6 can be reduced, generation of vortex near the partition wall 52 can be reduced or suppressed, and quality of the device growth material can be further improved.

In this embodiment, the thickness of the partition wall 52 is greater than 5mm, so that the gas guide passage 51 formed on the partition wall 52 can have a certain length, which can guide the purge gas flowing into the space region.

In this embodiment, the horn 524 may be configured as a slope, an arc surface, a curved surface, a slope with multiple different inclination angles, a combination surface of the slope and the arc surface, or a combination surface of the slope and the curved surface. Accordingly, the axial section line of the flare 524 is any one of a straight line, an arc line, and a curve, or a combination of a straight line and an arc line, or a combination of a straight line and a curve. The shielding member 5 adopts the partition walls 52 with different shapes, so that the distribution of the purge gas in the space area can be more finely matched with the size proportion of the reaction cavity 1, the process, the gas flow conditions and the like, and the gas flow stability in the reaction cavity 1 is further improved.

In some embodiments, the shape of the horn 524 is such that the line between the two ends of the axial section line of the horn 524 (as in the CD section shown in fig. 2) makes an angle α with the central axis of the reaction chamber 1, which satisfies: the horn 524 may be formed substantially in an inclined plane such that 0 ° < a+.ltoreq.45°, and the gas guide passage 51 in the horn 524 may have a certain directivity, thereby allowing the flow rate of the purge gas to have a certain directivity. The angle α is obtained by coupling the structure, the size and the process conditions (such as temperature, pressure, gas flow, rotation speed, etc.) of the reaction chamber 1.

In this embodiment, the air guide channel 51 extends from the first side 521 to the second side 522, and the air guide channel 51 does not extend beyond the second side 522. If the gas guide channel 51 extends beyond the second side 522 into the reaction zone 6, the flow of the reaction gas is blocked, which becomes a source of local turbulence and affects the quality of the growth material of the apparatus.

In this embodiment, the shape of the air guide passage 51 includes any one of a tube shape and a slit section. Fig. 1 and 2 show a case where the shape of the air guide passage 51 is tubular, and fig. 3 shows a case where the shape of the air guide passage 51 is a slit section. The shape of the air guide channel 51 may also be a combination of tubular and slit segments.

In this embodiment, the inner diameter of the gas guide passage 51 is 0.2-2mm to form a certain flow resistance to the purge gas so that the purge gas injected into the space region has a certain direction, and if the inner diameter of the gas guide passage 51 is too large, the purge gas is caused to enter the space region in a diffused form without difficulty to obtain a component in the central axis direction of the reaction chamber 1 so that a disturbance is generated to the gas flow in the reaction zone 6.

In this embodiment, the inner diameter of the air outlet formed on the second side 522 by the air guide channel 51 is greater than or equal to the inner diameter of the air inlet formed on the first side 521 by the air guide channel 51. That is, the inner diameter is unchanged from the air inlet of the air guide channel 51 to the air outlet of the air guide channel 51, or the inner diameter of the air outlet of the air guide channel 51 is larger than the inner diameter of the air inlet of the air guide channel 51. If the inner diameter of the air outlet of the air guide channel 51 is larger, the area between the air outlets of the adjacent air guide channels 51 can be reduced, and the purging area can be increased, so that the adhesion of reaction byproducts on the partition wall 52 is reduced, and further, in this case, the arrangement of the air guide channels 51 on the horn 524 can be more sparse, so that the processing difficulty of the shielding device with purging is reduced, and the cost is reduced.

Referring to fig. 4 and 5, in some embodiments, the air guide passage 51 includes a first passage 511 and a second passage 512 communicating with the first passage 511, and an inner diameter of the second passage 512 is gradually increased and is larger than an inner diameter of the first passage 511. Wherein the second channel 512 is in communication with the spatial region. In a further embodiment, the length of the first channel 511 is greater than the length of the second channel 512 in a direction along the centerline of the gas guide channel 51, wherein the first channel 511 guides the purge gas and the second channel 512 flares to increase the purge area of the purge gas on the partition wall 52. Preferably, the length of the first channel 511 is greater than or equal to 2 times the length of the second channel 512, so as to ensure the air guiding effect of the first channel 511.

In this embodiment, the sum of the areas of the air outlets formed by the air guide channels 51 on the second side 522 is greater than or equal to 30% of the area of the second side 522, so as to ensure a purge area, and minimize the adhesion of reaction byproducts on the partition wall 52.

In this embodiment, referring to fig. 1 to 5, the gas guide passage 51 includes a vertical purge gas flow passage having a center line parallel to the center axis of the reaction chamber 1 such that the flow velocity of the purge gas introduced into the space region includes only an axial component.

In the case that the reaction chamber 1 is a vertical flow chamber, the vertical purge gas flow path is formed by designing the direction in which the gas guide path 51 penetrates the shield 5, and the direction in which the purge gas flows into the reaction chamber 1 is downward along the central axis direction of the reaction chamber 1, that is, the gas flow rate of the purge gas flowing into the reaction chamber 1 includes only an axial component. The design can ensure that the purge gas does not generate extra disturbance on the gas flow of the reaction zone 6, effectively inhibit or improve the deposition of reaction byproducts on the separation wall 52 and simultaneously reduce and inhibit the generation of vortex near the separation wall 52.

In this embodiment, the distribution range of the air guide channels 51 on the flare 524 covers the reaction zone 6.

In this embodiment, the air guide channels 51 are circumferentially distributed in the horn 524, and multiple layers of air guide channels 51 are formed along the central axis direction of the reaction chamber 1.

In some embodiments, the air outlets formed by adjacent circumferential air guide channels 51 on the second side 522 are aligned or offset. Fig. 1 shows a case where the air outlets are arranged in a staggered manner.

Further, the inner diameters of the air guide channels 51 of the layers are the same, or the inner diameters of the air guide channels 51 of the layers are gradually increased from top to bottom.

In some embodiments, the number of the air guide channels 51 of each layer is the same, or the number of the air guide channels 51 of the lowest layer is multiple than the number of the air guide channels 51 of the uppermost layer from top to bottom.

For example, 6 circles of the air guiding channels 51 are disposed on the trumpet portion 524 from top to bottom, the number of the air guiding channels 51 on each circle is the same, or assuming that the number of the air guiding channels 51 on the uppermost circle is N, the number of the air guiding channels 51 on each circle is N, 2N, 3N, 4N, 5N, 6N, or may also be N, N, 2N, 3N, or may also be N, N, N, 3N, and so on, and other distribution manners are not repeated herein, and the specific number distribution of the air guiding channels 51 is determined by the distribution situation of the purge gas required by the process.

Therefore, the distribution of the purge gas from top to bottom of the shielding member 5 can be finely adjusted by the size of the gas guide channel 51 and the distribution density on the flare 524, and the maximum purge area is ensured without affecting the flow field of the reaction chamber.

In this embodiment, referring to fig. 1 and 2, the shielding member 5 includes an annular cavity 53, the annular cavity 53 includes an outer wall near the inner sidewall of the reaction cavity 1 and an inner wall near the reaction zone 6, the inner wall of the annular cavity 53 is formed as the partition wall 52, the outer wall of the annular cavity 53 is adapted to the inner sidewall of the reaction cavity 1, a purge gas inlet 55 is provided on the annular cavity 53, and the annular cavity 53 is in communication with the gas guide channel 51. In order to improve the uniformity of the purge gas, a plurality of purge gas inlets 55 may be uniformly provided on the annular chamber 53. The purge gas inlet 55 may be located at a top end or a side wall of the annular cavity 53, and correspondingly, the reaction cavity 1 is further provided with a mechanism for delivering purge gas to the annular cavity 53, the mechanism is communicated with the annular cavity 53 through the purge gas inlet 55, and the purge gas is injected into the space region through the gas guide channel 51 after passing through the annular cavity 53.

In other embodiments, referring to fig. 6 and 7, the shutter 5 is no longer an annular chamber 53, but an annular chamber 53 'is adaptively defined between the partition wall 52 and the inner side wall of the reaction chamber 1 and the top of the reaction chamber 1 during vapor deposition, the reaction chamber 1 is provided with a mechanism for supplying purge gas to the annular chamber 53', the annular chamber 53 'is in communication with the gas guide channel 51, and the purge gas is introduced into the space region after entering the gas guide channel 51 through the annular chamber 53'.

Example two

Referring to fig. 8 to 9, the present embodiment provides a shielding device with purging, which is the same as the first embodiment and is not described in detail, and is different from the first embodiment in that: in the first embodiment, the gas guide channel 51 is a vertical purge gas flow channel, that is, the center line of the gas guide channel 51 is parallel to the center axis of the reaction chamber 1, so that the gas flow velocity of the purge gas introduced into the space region includes only an axial component. In this embodiment, the air guide passage 51 is not a vertical purge air passage, but is a rotating purge air passage, and the rotating purge air passage extends through the partition wall 52 in a circumferential direction by an angle β, so that the air flow velocity of the purge air introduced into the space region includes an axial component and a tangential component, thereby forming a rotating purge air flow, and the rotating purge air passages are circumferentially arranged on the partition wall 52 so that the rotating direction of the rotating purge air flow is the same as the rotating direction of the rotating shaft 4. In order to avoid the influence of the purge gas introduced into the reaction chamber on the flow field in the reaction chamber, the angle β should be such that the flow velocity of the purge gas introduced into the space region includes only an axial component and a tangential component, and does not include a radial component, that is, the direction of the gas guide passage 51 cannot be inclined toward the central axis of the reaction chamber 1 in the radial direction of the reaction chamber 1.

Wherein beta is: the tangential plane of the central axis of the reaction chamber 1, which defines the bottom surface centroid passing through the air outlet formed on the second side 522 of the air guide channel 51, is the tangential plane of the bottom surface centroid, the central line of the air guide channel 51 is located in the tangential plane of the bottom surface centroid, an angle β is formed between the central line of the air guide channel 51 and the central axis of the reaction chamber 1, and the β is not equal to 0 °.

For a vertical flow chamber with a bearing disc which rotates at a high speed under the drive of a rotating shaft in the reaction chamber 1, a shielding device with a sweeping function is adopted, wherein the sweeping function is provided with a sweeping airflow channel, the sweeping airflow channel can jet sweeping gas nearby the rotating bearing disc to form a sweeping airflow, the direction of the sweeping airflow is consistent with the rotating direction of the bearing disc in the reaction process, the sweeping airflow has tangential speed and momentum, the flow of the flow field in the reaction chamber 1 in the edge area is enabled to collide and mix and the streamline steering process is enabled to be more stable, the generation of vortex in the reaction chamber 1 is restrained, and the laminar flow characteristic of the flow field of the reaction chamber 1 is enabled to be more stable.

In some embodiments, the angle β of the rotating purge gas flow channel at the lowermost level of the flare 524 is greater than or equal to the angle β of the rotating purge gas flow channel at the uppermost level of the flare 524, or increases gradually from top to bottom along the flare 524. In this way, the impact on the flow field at the upper part of the reaction cavity 1 can be reduced while the flow impact mixing and streamline steering process of the flow field in the reaction cavity 1 at the edge area is more stable.

Preferably, the ratio of the tangential component to the axial component of the flow velocity of the purge gas is not too large, which would have a large influence on the flow in the reaction zone and would be detrimental to the uniform injection of the reaction gas into the reaction chamber 1. Preferably, 0 DEG < beta < 60 deg.

Example III

The present embodiment provides a shielding device with purging, which is different from the first embodiment and the second embodiment in that the air guide channel 51 is a combination of a vertical purging air flow channel and a rotating purging air flow channel.

It should be noted that, in the case of the vertical flow chamber in which the carrier plate is provided in the reaction chamber 1 to rotate at a high speed by the rotation shaft, since the carrier plate rotates at a high speed, the region close to the carrier plate needs to rotate the purge gas flow to reduce the vortex, it is preferable to provide the rotating purge gas flow passage on the shutter 5 close to the circumferential region of the carrier plate. Meanwhile, in order to avoid influencing the flow field of the reaction chamber 1, the air guide channels 51 of other areas on the shielding member 5 are all arranged as the vertical purge air flow channels except that the air guide channels 51 of the circumferential area close to the carrying disc are arranged as the rotating purge air flow channels.

Example IV

Referring to fig. 2, the vapor deposition apparatus provided in the present embodiment may be, for example, a chemical vapor deposition device, a physical vapor deposition device, a plasma enhanced vapor deposition device, a Metal Organic Chemical Vapor Deposition (MOCVD) device, or the like. The vapor deposition equipment comprises a reaction cavity 1, a first gas injection mechanism 21, a second gas injection mechanism 22, a bearing disc 3, a rotating shaft 4 and a shielding device with purging, wherein the shielding device with purging is any one of the first embodiment to the third embodiment. The cross section of the reaction chamber 1 is generally circular or circular-like in structure. The central axis of the reaction chamber 1 is parallel to the axis of the rotary shaft 4, and preferably, the central axis of the reaction chamber 1 coincides with the axis of the rotary shaft 4.

The first gas injection mechanism 21 is located in the middle area at the top of the reaction chamber 1, and is used for injecting reaction gas into the reaction chamber 1; the second gas injection mechanism 22 is located in the peripheral area at the top of the reaction chamber 1 and is disposed around the first gas injection mechanism 21. The carrying tray 3 is located in the reaction chamber 1 and is opposite to the first gas injection mechanism 21, and a reaction zone 6 is formed above the carrying tray 3; the rotation shaft 4 is connected to the carrier plate 3 for driving the carrier plate 3 to rotate during vapor deposition. Since the partition wall 52 is configured to include the straight barrel portion 523 at the upper end and the horn portion 524 at the lower end, correspondingly, in order to match with the installation of the shielding device with purge, the air outlet surface of the second air injection mechanism 22 is higher than the air outlet surface of the first air injection mechanism 21, so that an upward concave step exists between the air outlet surface of the second air injection mechanism 22 and the air outlet surface of the first air injection mechanism 21. When vapor deposition is performed in the reaction chamber 1, the straight tube portion 523 is fittingly inserted into the upward recessed step, so that the flare 524 and the first gas injection mechanism 21 enclose the space region, and the second gas injection mechanism 22 communicates with the first side 521 side to deliver purge gas to the gas guide 51.

Referring to fig. 2, when the shutter 5 includes an annular chamber 53, the top end of the annular chamber 53 mates with the second gas injection mechanism 22. For example, the shape and size of the top end of the annular chamber 53 is substantially the same as the second gas injection mechanism 22. The top end of the annular cavity 53 is provided with a purge gas inlet 55, and the annular cavity 53 is communicated with the gas guide channel 51. After the straight tube portion 523 is adaptively inserted into the upward recessed step, the top end of the annular cavity 53 abuts against the second gas injection mechanism 22, and the gas outlet of the second gas injection mechanism 22 is in abutting communication with the purge gas inlet 55, and the horn portion cooperates with the first gas injection mechanism 21 to form the space region. The second gas injection mechanism 22 is configured to deliver a purge gas into the annular chamber 53, and the purge gas is introduced into the space region through the gas guide channel 51 after entering the annular chamber 53, so as to inhibit or improve deposition of reaction byproducts on the partition wall 52.

Referring to fig. 7, when the shielding member 5 is not an annular cavity 53, but the main frame structure of the shielding member is formed by the partition wall 52, the straight barrel portion 523 of the partition wall 52 is adaptively inserted into the upwardly recessed step when vapor deposition is performed in the reaction chamber 1, an annular cavity 53' is adaptively defined between the horn portion 524 of the partition wall 52 and the inner side wall of the reaction chamber 1, and the second gas injection mechanism 22, and the horn portion 524 of the partition wall 52 cooperates with the first gas injection mechanism 21 to form the space region. The second gas injection mechanism 22 is configured to deliver a purge gas into the annular cavity 53', the annular cavity 53' is in communication with the gas guide channel 51, and the purge gas enters the gas guide channel 51 through the annular cavity 53' and is then introduced into the space region.

In some embodiments, the air guide channels 51 are circumferentially distributed in the horn 524, and multiple layers of the air guide channels 51 are formed along the axial direction of the rotating shaft 4.

Further, the inner diameters of the air guide channels 51 of the layers are the same, or the inner diameters of the air guide channels 51 of the layers gradually increase from top to bottom from the top of the reaction chamber 1 to the bearing plate 3. In some embodiments, the number of the gas guide channels 51 of each layer is the same, or the number of the gas guide channels 51 of the lowest layer is multiple than the number of the gas guide channels 51 of the uppermost layer from top to bottom in the direction from the top of the reaction chamber 1 to the carrier plate 3.

In some embodiments, the flare 524 surrounds the carrier plate 3, and the distribution range of the air guide channels 51 on the flare 524 satisfies: the purge gas outlet surface formed by the gas guide channel 51 at the lowest layer of the flare 524 is not higher than the bearing surface of the bearing plate 3. Further, the distribution range of the air guide channels 51 on the flare 524 also covers at least part of the area from the first gas injection mechanism 21 to the bearing surface of the bearing plate 3. Preferably, the air guide channels 51 are distributed on the horn 524 from the first gas injection mechanism 21 to the area of the carrying surface of the carrying tray 3, so as to ensure the maximum purge area. It is necessary that the distance between the purge gas outlet surface formed by the gas guide channel 51 located at the uppermost layer of the trumpet portion 524 and the outlet surface of the reaction gas ejected from the first gas injection mechanism 21 is smaller as the flow field of the reaction gas from the edge of the first gas injection mechanism 21 is not affected. Defining a distance H between the purge gas outlet surface formed by the uppermost gas guide channel 51 and the outlet surface sprayed by the reaction gas from the first gas injection mechanism 21, and defining a distance H between the outlet surface sprayed by the reaction gas from the first gas injection mechanism 21 and the bearing surface of the bearing plate 3, where the distance H satisfies the following conditions: h is less than or equal to 0.25H. This minimizes the possibility of reaction by-products adhering to the dividing wall 52 by keeping the flare 524 above the carrier plate 3 as free as possible of unswept areas.

In some embodiments, the radial distance d between the edge of the carrier plate 3 and the partition wall 52 is such that: d is more than or equal to 0.1H and less than or equal to H, wherein H is defined as the distance between the gas outlet surface of the reaction gas sprayed out from the first gas injection mechanism 21 and the bearing surface of the bearing disc 3. If d is too small, the exhaust of the gas in the reaction chamber 1 is not facilitated, and if d is too large, the gas is wasted and the utilization rate of the reaction gas is not high.

Example five

Referring to fig. 1, the present embodiment provides a vapor deposition apparatus, which has a similar structure to that of the fourth embodiment, and in this embodiment, the purge gas delivered to the gas guide channel 51 is uniformly controlled so as to have the same kind and composition. For example, the same purge gas is introduced into the annular chamber 53 or the annular chamber 53' by the second gas injection mechanism 22. It should be noted that the same purge gas mentioned above does not refer to a single gas species, but refers to the same gas that is fed into the reaction chamber 1 from each of the gas guide channels 51, and may be a single gas or a mixed gas, and the purge gases do not react with each other, or the purge gases react with each other but do not generate the target product. For example, for group III-V MOCVD, the purge gas may include one or more of H2, N2, and an inert gas, and may also be a group V hydride source gas and a carrier gas.

A control unit (not shown), such as a valve, a mass flow controller, a pressure controller, etc., is further disposed between the second gas injection mechanism 22 and the annular chamber 53 or the annular chamber 53', and the control unit uniformly controls the purge gas in the annular chamber 53 or the annular chamber 53', so that the types and the components of the purge gas in the gas guide channel 51 are the same.

Example six

The difference between the vapor deposition apparatus provided in this embodiment and the fifth embodiment is that, referring to fig. 10, at least one blocking member 54 is disposed on the shielding member 5, the blocking member 54 partitions the flare 524 into a plurality of independent sub-areas from top to bottom in the circumferential direction of the flare 524, so that the gas guide channels 51 are distributed in the plurality of independent sub-areas, and the purge gas conveyed by the gas guide channels 51 in at least two sub-areas is independently regulated.

In some embodiments, referring to fig. 10, the barrier 54 is a cylinder coaxial with the reaction chamber 1. When the number of the blocking members 54 is plural, the blocking members 54 are coaxially distributed from inside to outside in the radial direction of the reaction chamber 1, and the height of the blocking members 54 in the axial direction of the reaction chamber 1 is gradually increased from inside to outside.

Correspondingly, the blocking member 54 divides the annular cavity 53 or the annular cavity 53' into a plurality of sub annular cavities 531 from inside to outside, and a sub purge gas inlet 551 communicating with the gas outlet of the second gas injection mechanism 22 is provided at the top end of each sub annular cavity 531, so that the purge gas delivered by at least two sub annular cavities 531 is independently regulated and controlled. The purge gas delivered by the sub annular cavity 531 is controlled so that the purge gas delivered by the gas guide channels 51 in at least two of the sub areas is independently controlled.

Further, the flow rate of the purge gas supplied in each of the sub annular chambers 531 is equal, or the flow rate of the purge gas supplied in each of the sub annular chambers from inside to outside is gradually increased. In this way, the flow rate of the purge gas introduced into the space region through the gas guide passage 51 in each sub-region is made equal, or the flow rate of the purge gas introduced into the space region through the gas guide passage 51 in each sub-region from top to bottom is gradually increased.

In some embodiments, the average molecular weight of the purge gas delivered in each of the sub-annular chambers 531 is equal, or the average molecular weight of the purge gas delivered in each of the sub-annular chambers 531 gradually increases from inside to outside. In this way, the average molecular weight of the purge gas introduced into the space region through the gas guide passage 51 in each of the sub-regions is made equal, or the average molecular weight of the purge gas introduced into the space region through the gas guide passage 51 in each of the sub-regions from top to bottom is gradually increased.

In this embodiment, the baffle member 54 is disposed on the shielding member 5, so that the air guide channel is located in a plurality of independent sub-areas from top to bottom in the circumferential direction of the flare portion, so that the distribution of the purge gas after entering the reaction area is more suitable, and the distribution of the purge gas from top to bottom of the shielding member 5 is further finely adjusted, thereby more finely matching the size ratio of the reaction chamber 1, the process, the air flow conditions, and the like, and greatly improving the air flow stability in the reaction chamber 1.

Example seven

The present embodiment provides a vapor deposition apparatus, which is similar to any one of the fourth to sixth embodiments, and the difference is that, referring to fig. 2 and 11, in this embodiment, an opening 11 is provided on a side wall of the reaction chamber 1, the opening 11 is used for placing or taking out the carrier tray 3, a lifting mechanism (not shown in the drawing) is located on a top wall or a bottom wall of the reaction chamber 1, the lifting mechanism is connected with the shielding member 5, and the lifting mechanism drives the shielding member 5 to move up and down along an axial direction of the rotation shaft 4, so that the shielding member 5 shields the opening 11 or exposes the opening 11, thereby facilitating the taking and placing of the carrier tray 3.

Referring to fig. 2 and 11, the partition wall 52 has a structure including a straight tube portion 523 at an upper end and a horn portion 524 at a lower end, and an upwardly concave step is provided between the gas outlet surface of the second gas injection mechanism 22 and the gas outlet surface of the first gas injection mechanism 21.

Referring to fig. 2, when vapor deposition is required in the reaction chamber 1, the lifting mechanism moves upwards to drive the shielding member 5 to move upwards along the axial direction of the rotating shaft 4, so that the straight barrel portion 523 is adaptively inserted into the upward recessed step to be abutted against the second gas injection mechanism 22, the gas outlet of the second gas injection mechanism 21 is communicated with the side of the first side 521, and the horn portion 524 and the first gas injection mechanism 21 enclose the space region covering the reaction region 6, and the opening 11 is shielded by the shielding member 5. The first gas injection means 21 is then used to deliver a reaction gas to the reaction zone and the second gas injection means 22 is used to deliver a purge gas.

Referring to fig. 11, when the carrier plate 3 needs to be put in or taken out, the lifting mechanism drives the shielding member 5 to move downwards along the axial direction of the rotating shaft 4, the straight barrel portion 523 leaves the step recessed upwards, and the carrier plate continues to descend until the opening 11 is exposed, so that the carrier plate 3 can be taken out through the opening 11.

While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims (23)

1. The utility model provides a shielding device of area sweep sets up in cylindrical reaction chamber of class, its characterized in that includes:

The shielding piece is arranged around the inner side wall of the reaction cavity and provided with a separation wall close to one side of a reaction zone of the reaction cavity, the separation wall comprises a first side face close to the inner side wall of the reaction cavity and a second side face far away from the inner side wall of the reaction cavity, the separation wall comprises a straight barrel part positioned at the upper end and a horn part positioned at the lower end, the radial dimension of the straight barrel part is consistent, the radial dimension of the horn part is gradually increased from top to bottom, the horn part is enclosed into a space area, the space area covers the reaction zone, and the outer diameter of the bottommost end of the shielding piece is matched with the inner diameter of the reaction cavity;

The air guide channels are distributed in the horn part and used for injecting purge gas into the space area, and the air guide channels penetrate through the separation wall from the first side face to the second side face in a certain direction, so that the component of the velocity of the purge gas injected into the space area in the direction of the central axis of the reaction cavity is not 0.

2. The purged shielding apparatus according to claim 1, wherein the air guide passage penetrates from the first side surface to the second side surface without exceeding the second side surface, and an inner diameter of an air outlet formed by the air guide passage on the second side surface is not smaller than an inner diameter of an air inlet formed by the air guide passage on the first side surface.

3. The purged occlusion device of claim 2, wherein the sum of the areas of the air outlets formed by said air guide channels on said second side is not less than 30% of the area of said second side.

4. The purged occlusion device of claim 2, wherein said air guide channel comprises a first channel and a second channel in communication with said first channel, said second channel having an inner diameter that gradually increases and is greater than an inner diameter of said first channel.

5. The purged occlusion device of claim 4, wherein the length of said first channel is greater than the length of said second channel in a direction along a centerline of said air guide channel.

6. The purged occlusion device of claim 5, wherein the length of said first passageway is greater than or equal to 2 times the length of said second passageway.

7. The purged occlusion device of claim 2, wherein said barrier wall has a thickness greater than 5mm.

8. The purged occlusion device of claim 7, wherein said air guide channel has an inner diameter of 0.2-2 mm.

9. The purged occlusion device of claim 1, wherein a centerline of said gas directing channel is parallel to a central axis of said reaction chamber.

10. The purged occlusion device of claim 1, wherein the cross-sectional line of the horn is any one of a straight line, an arc, a curve, a combination of a straight line and an arc, or a combination of a straight line and a curve.

11. The purged shielding apparatus according to claim 10, wherein a line between upper and lower end points of an axial section line of the horn portion forms an angle α with a central axis of the reaction chamber, the α satisfying: a is more than 0 and less than or equal to 45 degrees.

12. The purged shielding apparatus according to claim 1, wherein the shielding member comprises an annular chamber including an outer wall near an inner side wall of the reaction chamber and an inner wall near the reaction region, the inner wall of the annular chamber being formed as the partition wall, the outer wall of the annular chamber being fitted with the inner side wall of the reaction chamber, and the annular chamber being provided with a purge gas inlet.

13. A vapor deposition apparatus, comprising:

a reaction chamber;

A purged shielding apparatus as claimed in any one of claims 1 to 12;

The first gas injection mechanism is positioned in the middle area of the top of the reaction cavity and is used for injecting reaction gas into the reaction cavity;

The second gas injection mechanism is positioned in the peripheral area at the top of the reaction cavity and surrounds the first gas injection mechanism, an upward concave step is arranged between the gas outlet surface of the second gas injection mechanism and the gas outlet surface of the first gas injection mechanism, when vapor deposition is carried out in the reaction cavity, the straight barrel part is adaptively inserted into the upward concave step, so that the horn part and the first gas injection mechanism form the space area, and the second gas injection mechanism is communicated with the first side surface side to convey purge gas to the gas guide channel;

the bearing disc is positioned in the reaction cavity and is arranged opposite to the first gas injection mechanism;

And the rotating shaft is connected with the bearing disc and drives the bearing disc to rotate during vapor deposition.

14. The vapor deposition apparatus according to claim 13, wherein the gas guide channels are circumferentially distributed in the horn section and form a plurality of layers of the gas guide channels in an axial direction of the rotating shaft.

15. The vapor deposition apparatus of claim 14, wherein a distance between a purge gas outlet surface formed by defining the uppermost gas guide channel and the first gas injection mechanism outlet surface is H, and a distance between the first gas injection mechanism outlet surface and the bearing surface of the bearing plate is H, which satisfies: h is less than or equal to 0.25H.

16. The vapor deposition apparatus of claim 15, wherein the purge gas outlet surface formed by the lowermost gas guide channel is not higher than the bearing surface of the bearing plate.

17. The vapor deposition apparatus of claim 14, wherein the inner diameter of each layer of the gas guide channel is the same or gradually increases from top to bottom.

18. The vapor deposition apparatus of claim 14, wherein the number of gas guide channels of each layer is the same or the number of gas guide channels of a lowermost layer is a multiple of the number of gas guide channels of an uppermost layer.

19. The vapor deposition apparatus according to claim 13, wherein at least one blocking member is provided on the shielding member, the blocking member is a cylinder coaxial with the reaction chamber, the blocking member divides the horn into a plurality of independent sub-areas from top to bottom in the circumferential direction of the horn, the gas guide channels are located in the plurality of independent sub-areas, and the purge gas conveyed by the gas guide channels in at least two of the sub-areas is independently regulated.

20. The vapor deposition apparatus according to claim 19, wherein the flow rate of the purge gas supplied from the gas guide passage in each of the sub-regions is equal or the flow rate of the purge gas supplied from the gas guide passage in each of the sub-regions from top to bottom is gradually increased.

21. The vapor deposition apparatus according to claim 20, wherein an average molecular weight of the purge gas supplied from the gas guide passage in each of the sub-regions is equal, or an average molecular weight of the purge gas supplied from the gas guide passage in each of the sub-regions from top to bottom is gradually increased.

22. The vapor deposition apparatus according to claim 13, wherein the side wall of the reaction chamber is provided with an opening for putting in or taking out the carrier tray, a lifting mechanism is provided on the top wall or the bottom wall of the reaction chamber, the lifting mechanism is connected with the shielding member, and the lifting mechanism drives the shielding member to move up and down along the axis direction of the rotating shaft so that the shielding member shields the opening or exposes the opening.

23. The vapor deposition apparatus according to claim 22, wherein when the carrier tray is required to be put in or taken out, the elevating mechanism drives the shutter to move downward in the axial direction of the rotation shaft so that the opening is exposed, and the straight tube portion is separated from the upward recessed step;

When vapor deposition is carried out in the reaction cavity, the lifting mechanism drives the shielding piece to move upwards along the axial direction of the rotating shaft, so that the straight barrel part is adaptively inserted into the upward concave step, and the opening is shielded by the shielding piece.