KR102104799B1 - Large volume cvd apparatus - Google Patents

Abstract

The present invention relates to a CVD apparatus with large capacity, which is capable of performing deposition on a plurality of substrates of various shapes and sizes. The CVD apparatus with large capacity comprises: a CVD reaction chamber in which a substrate is installed; a gas injection unit installed at the center of the CVD reaction chamber to spray reaction gas; and one or more gas discharge units formed in the CVD reaction chamber. The gas injection unit includes a nozzle for spraying reaction gas toward the side surface of the CVD reaction chamber, and a nozzle moving apparatus for rotating a spray direction of the nozzle. According to the present invention, the CVD apparatus with large capacity includes the gas injection unit which is installed with the nozzle for spraying the reaction gas toward the side surface of the CVD reaction chamber with large capacity from the center of the same, and the plurality of gas discharge units which are formed on the side surface thereof, wherein a spray direction of the nozzle of the gas injection unit is configured to rotate, thereby forming supply, flow and distribution of optimized reaction gas through reaction gas spray controlled inside the DVD reaction chamber with large capacity such that a thick film or a molded article of the uniform thickness can be manufactured on a substrate surface of various shapes and sizes.

Description

LARGE VOLUME CVD APPARATUS

The present invention relates to a large-capacity chemical vapor deposition apparatus, more specifically, a large capacity capable of performing uniform thick film deposition by forming an optimized reaction gas supply, flow, and distribution in a reaction chamber in which a variety of substrates of various sizes and shapes are disposed. It relates to a chemical vapor deposition apparatus.

In general, silicon carbide is a strong covalent bonding material and has been manufactured in the form of a high-purity single crystal or polycrystalline powder at high temperature and low pressure, and has been manufactured as a bulk-type component through various sintering techniques. In particular, a single crystal silicon carbide wafer is produced through sublimation of high-purity powder. Advances in technology are driving the development of the SiC semiconductor industry. In addition, recently, due to the development of ultra-high integration and ultra-fine semiconductor technology, the use of polycrystalline silicon carbide molded parts as semiconductor process equipment parts to improve the process equipment and component characteristics used in the semiconductor manufacturing process, improve yield and reduce the final manufacturing cost. Is increasing.

The sintered silicon carbide used as a semiconductor component is a reaction sintering method that synthesizes silicon carbide by atmospheric pressure sintering or pressure sintering and reaction of molten silicon (Si, Silicon) and carbon (C, Carbon) using high-purity silicon carbide powder as a raw material. It has been used through the method and additional chemical vapor deposition (CVD) silicon carbide coating method, but due to limitations of pores, impurities, and low material properties of the sintered body, polycrystalline carbonization produced through CVD thick film deposition Silicon molded bodies are manufactured and used as parts.

The CVD method injects highly reactive gaseous raw materials into the chamber of the reactor, activates and decomposes them using light, heat, plasma, microwave, X-ray, electric field, etc. And a technique for forming a thick film. In addition to the case of forming a polycrystalline silicon carbide molded body, these CVD processes are widely used in various fields such as semiconductors and power semiconductors, LEDs, autonomous vehicles, and energy fields in the form of single crystals, epitaxial films, and polycrystals.

In order to form a uniform thin film and thick film by a large-capacity CVD method, the reaction gas type, gas mixing ratio, gas mixing uniformity and gas injection method into the reaction chamber, deposition temperature and temperature uniformity or temperature gradient in the chamber, deposition pressure, reaction gas flow It is necessary to optimize various process conditions such as speed and distribution of flow rate in the substrate in the reaction chamber, deposition rate, reaction chamber structure, exhaust of reactive gas and reaction by-products, and loading method of the substrate in the chamber, among them, in the CVD reaction chamber It is very important that the raw material gas is evenly injected and sprayed and uniformly distributed on all the substrates loaded in the large-capacity CVD reaction chamber. In particular, the raw material gas must be uniformly supplied on various types and sizes of substrates loaded in the large-capacity CVD reaction chamber, and the laminar flow or turbulent flow or the mixed flow of laminar and turbulent flow must be controlled. Unreacted raw material gas and reactive by-product gases must be discharged in a timely manner through an exhaust port.

For uniform deposition, a number of gas supply nozzles are installed into a large-capacity CVD reaction chamber to supply raw material gas from the top to the bottom or from the bottom to the top or from the side to the side or from the side to the bottom or from the bottom to the top again. Reaction using a variety of ways (U.S. Patent No. 5,474,613, U.S. Patent No. 6,299,683) or a large number of independent triangular inner cell chamber structures in a large CVD reaction chamber to control injection and flow and uniformly supply reaction gas onto a substrate A method of forming a radial silicon carbide molded body in the vertical direction of the gas flow (US Patent No. 5,354,580) or injecting and exhausting the reaction gas in a horizontal direction in a large-capacity CVD reaction chamber to the front of the substrate vertically stacked in the reaction gas flow Development of a method for manufacturing a large amount of silicon carbide molded body (Korean Patent No. 10-1631796), etc. It has been. Generally, a more uniform polycrystalline silicon carbide thick film is deposited through a method of rotating a substrate or a laminated substrate during deposition of a large-capacity CVD thick film, but a large-capacity CVD apparatus for mass production is equipped with dozens to hundreds of substrates inside the reaction chamber. Since the CVD process is performed at high temperature, it is difficult to supply the raw material gas uniformly to the substrate surface of various shapes and sizes, and considering the weight of the loaded heavy substrate portion and graphite parts for fixing it, the substrate rotates at a low speed. There is a limitation that it is difficult to uniformly deposit a high-yield uniform thick film by only applying the structure to be used.

Therefore, it is possible to mount hundreds to hundreds of substrates of various shapes and sizes inside the large-capacity CVD reaction chamber, and by controlling the injection, flow and distribution of the reactant gas over the entire space of the large-capacity CVD reaction chamber, polycrystalline silicon carbide of uniform thickness The development of a large-capacity CVD apparatus capable of producing thick films or molded articles continues to be demanded.

U.S. Patent No. 5,474,613 U.S. Patent 6,299,683 U.S. Patent 5,354,580 Republic of Korea Registered Patent 10-1631796

The present invention is to solve the problems of the above-described prior art, while being able to install a large number of substrates of various shapes and sizes inside a large-capacity CVD reaction chamber, at the same time, optimized reaction through injection of controlled reaction gas at the center of the reaction chamber An object of the present invention is to provide a large-capacity CVD apparatus capable of forming a thick film or a molded body of uniform thickness by forming gas supply, flow, and distribution.

A large-capacity CVD apparatus according to the present invention for achieving the above object is a large-capacity CVD apparatus capable of performing deposition on a plurality of substrates of various shapes and sizes, a CVD reaction chamber in which a substrate is installed; A gas injection unit installed at the center of the CVD reaction chamber to inject a reaction gas; And one or more gas outlets formed in the CVD reaction chamber, wherein the gas injection unit includes a nozzle for injecting a reaction gas toward a side surface of the CVD reaction chamber and a nozzle moving device capable of rotating the injection direction of the nozzles. It is characterized by.

In the high-capacity CVD apparatus according to the present invention, not only polycrystalline silicon carbide, but also various materials such as boron carbide (boron carbide, B ₄ C), tantalum carbide (TaC), and tungsten carbide (WC) can be produced in the form of a thick film or a molded body. .

At this time, the gas injection unit may be formed with a plurality of nozzles having different heights.

In addition, it is preferable that the nozzle moving device is capable of moving the nozzle up and down, a plurality of nozzles having different heights are disposed at equal intervals with each other, and the nozzle moving device moves the nozzles up and down, the nozzle having a different height. The reaction gas can be evenly distributed in the case of the intervals between them, and finally, a uniform gas flow and distribution can be formed on all the substrate surfaces installed inside to produce a thick film or a molded body of uniform thickness.

In addition, it is preferable that a plurality of nozzles having different injection directions are formed at the same height, and the plurality of nozzles having different injection directions are disposed at the same angle and the angles of rotating and moving the nozzles in the nozzle moving device have different injection directions. In the case of the angle between the nozzles, the reaction gas can be evenly distributed, and finally, a uniform gas flow and distribution can be formed on all the substrate surfaces installed inside to produce a thick film or molded body of uniform thickness.

The present invention, configured as described above, includes a gas injection unit provided with a nozzle for injecting a reaction gas from the center of the large-capacity CVD reaction chamber toward the side and a plurality of gas discharge units formed on the side, and the nozzle injection direction of the gas injection unit By configuring it to be rotated, it is possible to manufacture a thick film or molded body of uniform thickness on the substrate surface of various shapes and sizes by forming optimized reaction gas supply, flow and distribution through controlled reaction gas injection inside a large-capacity CVD reaction chamber. It has the effect.

1 is a front sectional view of a reaction chamber of a large-capacity CVD apparatus according to an embodiment of the present invention.
2 is a cross-sectional view and an exploded perspective view of a gas injection unit installed in a reaction chamber of a large-capacity CVD apparatus according to an embodiment of the present invention.
3 is a cross-sectional view showing a state in which a large number of substrates of various sizes and shapes for CVD thick film deposition are installed in the reaction chamber of the large-capacity CVD apparatus according to the first embodiment.

An embodiment according to the present invention will be described in detail with reference to the accompanying drawings.

However, the embodiments of the present invention may be modified in various other forms, and the scope of the present invention is not limited only to the embodiments described below. The shape and size of elements in the drawings may be exaggerated for clarity, and elements indicated by the same reference numerals in the drawings are the same elements.

And throughout the specification, when a part is "connected" to another part, this includes not only "directly connected" but also "electrically connected" with another element in between. Also, when a part is said to "include" or "equipment" a component, this means that other components may be further included or provided, rather than excluding other components unless otherwise specified. do.

In addition, terms such as “first” and “second” are for distinguishing one component from other components, and the scope of rights should not be limited by these terms. For example, the first component may be referred to as the second component, and similarly, the second component may also be referred to as the first component.

1 is a front sectional view of a reaction chamber of a large-capacity CVD apparatus according to an embodiment of the present invention.

In the reaction chamber 100 of the CVD apparatus according to the present embodiment, the gas injection unit 210 is inserted from the center of the upper surface toward the bottom, and a plurality of gas discharge units 220 are formed on the side surfaces.

Hereinafter, a large-capacity CVD apparatus according to this embodiment will be described based on an apparatus capable of installing a large amount of substrates of various shapes and sizes for forming a polycrystalline silicon carbide thick film, but is not limited thereto, and boron carbide (boron carbide, B ₄ C), tantalum carbide (TaC), and tungsten carbide (WC) are also applicable to the deposition of various materials.

As will be described in more detail later, the gas injection unit 210 includes a nozzle for injecting the reaction gas from the center of the reaction chamber 100 toward the side, and the reaction gas moving radially from the center of the reaction chamber 100 It is discharged through the gas discharge unit 220 formed on the side.

The reaction chamber 100 of the illustrated embodiment has a flat cross-section on the side, but is not limited thereto, but considering that the reaction gas is injected from the center of the reaction chamber 100 toward the side, the flat cross-section of the side The efficiency will be higher if it is cylindrical.

The gas discharge unit 220 is not particularly limited as long as it is a structure capable of discharging the gas inside the reaction chamber 100 to the outside and is applicable. However, it is preferable that a plurality of gas discharge parts 220 are formed at different locations to facilitate external discharge of reaction gas and by-product gas moving radially from the center of the reaction chamber 100, in particular a plurality of installation heights having different heights. It is preferable to form the gas discharge unit 220 of the multilayer.

2 is a cross-sectional view and an exploded perspective view of a gas injection unit installed in a reaction chamber of a CVD apparatus according to an embodiment of the present invention.

The gas injection unit 210 of this embodiment includes a nozzle moving device 211, a gas injector 212, three nozzle devices 213, 214, and 215, and a heat insulating material 216.

The nozzle moving device 211 is a moving device that moves the nozzle through which the reaction gas is discharged, and performs rotational motion and vertical motion, and detailed movement of the nozzle moving device 211 will be described later in detail.

The gas injector 212 is a passage through which the reactive gas moves, and is connected to the three nozzle devices 213, 214, and 215 so that the reactive gas can be introduced to each of the nozzle devices 213, 214, and 215.

The nozzle devices 213, 214, and 215 are composed of an upper reaction gas inlet pipe and a lower nozzle to inject the reaction gas injected from the gas injector 212 into the reaction chamber through the nozzle.

At this time, in the present embodiment, three nozzle devices 213, 214, and 215 having different heights of nozzles through which reactive gas is discharged are provided. The nozzle is positioned at the highest position of the first nozzle device 213, the nozzle is positioned at the middle height of the second nozzle device 214, and the nozzle is positioned at the lowest position of the third nozzle device 215. To this end, the length and thickness of the reaction gas inlet pipe have the largest third nozzle device 215 and the second nozzle device 214 and the first nozzle device 213 sequentially decrease. The reaction gas inlet pipe of the second nozzle device 214 is inserted into the reaction gas inlet pipe of the third nozzle device 215, and the first nozzle device 213 is installed in the reaction gas inlet pipe of the second nozzle device 214. The reaction gas inlet pipe of is placed.

In addition, the nozzle of the second nozzle device 214 penetrates the reaction gas inlet pipe of the third nozzle device 215 and is connected to the reaction gas inlet pipe of the second nozzle device 214, and the nozzle of the first nozzle device 213 The nozzle passes through both the reaction gas inlet pipe of the third nozzle device 215 and the second nozzle device and is connected to the reaction gas inlet tube of the first nozzle device 213. To this end, a through-hole for a nozzle of the second nozzle device 214 and the first nozzle device 213 is formed in the reaction gas inlet pipe of the third nozzle device 215, and the reaction of the second nozzle device 214 The gas inlet pipe is formed with a through hole for installing the nozzle of the first nozzle device 213.

Through this configuration, the nozzles formed in the first nozzle device 213, the second nozzle device 214, and the third nozzle device 215 may be configured with three levels of nozzles having different heights.

In the first nozzle device 213, the second nozzle device 214, and the third nozzle device 215, three nozzles capable of injecting reactive gas are formed sideways, and the three nozzles are radially at the same angle. Are deployed. At this time, in the present embodiment, the nozzles in the first nozzle device 213, the second nozzle device 214, and the third nozzle device 215 are installed at the same position on the vertical line, but are not limited thereto.

On the other hand, in the present embodiment, the nozzle is provided with a configuration consisting of three stages of height, but is not limited thereto, and it is also possible to configure two or four stages by reducing or increasing the number of nozzle devices.

In addition, in the present embodiment, a configuration in which three nozzles are radially arranged at each stage is provided, but is not limited thereto, and it is possible to reduce or increase the number of nozzle devices.

Since the reaction chamber 100 as shown in FIG. 1 does not have any other mechanism installed therein, except for the heat insulating layer formed inside the outer wall of the chamber and the gas injection unit 210 positioned at the center, the gas injection is not performed. A space in which substrates of various sizes and shapes for CVD thick film deposition are installed in a position surrounding the portion 210 is sufficiently secured.

3 is a cross-sectional view showing a state in which a large number of substrates of various sizes and shapes for CVD thick film deposition are installed in the reaction chamber of the large-capacity CVD apparatus according to the first embodiment.

Although the case where the ring-shaped substrate is horizontally installed is illustrated in FIG. 3, in addition, a plate-shaped substrate or a plate-shaped or ring-shaped substrate having a different size may be applied, and the plate-shaped or ring-shaped substrate is vertically installed. It may be, such as a large number of substrates of various sizes and shapes are stacked and installed in large quantities inside the large-capacity CVD reaction chamber 100. In order to increase productivity, the distance between the substrate and the substrate can be appropriately adjusted, and the reaction gas is radiated through a three-stage nozzle having a different height from the gas injection part 210 installed in the center of the reaction chamber 100 as described above. By controlling the ejection operation, it is possible to form an optimized reaction gas supply, flow, and distribution according to the shape, installation direction, and installation interval of the substrate. Finally, a polycrystalline silicon carbide thick film or molded body of uniform thickness is applied to the surfaces of all substrates. Can be produced.

At this time, the configuration of rotating the substrate as in the prior art may be considered, and rotation may include rotation, revolution or reciprocating rotation within a certain angular range. When a plurality of substrates are simultaneously installed in a large-capacity CVD reaction chamber as illustrated, a form in which a substrate stacked on each axis or each layer is rotated at a low speed may be possible. However, the form of rotating each laminated substrate as a whole or within a certain angular range is not easy considering the weight of the entire substrate and the weight increased by thick film deposition during the CVD process, and the rotational speed is too slow to achieve uniform deposition on the entire substrate. It may be difficult to do. In addition, it is necessary to select the optimal rotational form according to the substrates of various shapes and sizes, and be careful about the shaking or vibration of the laminated substrates or the collapse of the substrates that may occur in the process of rotating multiple laminated substrates. The thick film formed by this can be obtained. However, according to the present invention, even if the substrate does not rotate or rotates only a little in a limited range, an optimized reaction gas supply, flow, and distribution is formed through the operation of the controlled gas injection unit 210 to form a polycrystalline silicon carbide thick film of uniform thickness. Alternatively, a molded body can be produced.

Accordingly, in the embodiment of the present invention, by applying a control structure for adjusting the position of the nozzle through the nozzle moving device 211 as described simply above, the gas flow in a large-capacity CVD reaction chamber in which a plurality of substrates are installed therein It was adjusted so that the reaction gas could be evenly distributed.

Specifically, the rotation and vertical movements of the nozzle are performed by the nozzle moving device 211.

The rotational motion does not inject the reaction gas in a state in which the radially arranged nozzles are fixed, but by injecting the reaction gas while rotating, the reaction gas can be distributed without a blind spot in the horizontal direction, and finally polycrystalline with uniform thickness A thick silicon carbide film or molded body can be produced.

At this time, the rotational movement by the nozzle moving device 211 may be configured such that the nozzle rotates 360 °, or may be configured to rotate only by an angle between a plurality of nozzles arranged radially at the same angle. In this embodiment, since the three nozzles are disposed at an isometric angle of 120 °, the same effect as rotating the entire 360 ° angle by the three nozzles even if the nozzle moving device 211 reciprocates only 120 ° rotation. Occurred, the reaction gas can be distributed without a blind spot in the horizontal direction, and finally a polycrystalline silicon carbide thick film or a molded body of uniform thickness can be produced.

Up and down motion does not spray the reactant gas at the same height with nozzles arranged in multiple stages at different heights, and the reactant gas can be distributed without blind spots in the vertical direction by spraying the reactant gas while moving up and down. A thick polycrystalline silicon carbide thick film or molded body can be produced.

At this time, the vertical movement by the nozzle moving device 211 is configured to move up and down only half of the interval between the nozzles having different heights, and it is sufficient if the length of the entire vertical movement is the height of each stage. In this embodiment, if the height is moved up and down by half of the gap between the nozzles arranged at different heights in three stages, the difference between the top and bottom heights of each nozzle becomes the gap between the nozzles, and thus moves up and down over the entire height. Since the same effect occurs, the reaction gas can be distributed without a blind spot in the vertical direction, and finally a polycrystalline silicon carbide thick film or molded body of uniform thickness can be produced.

In particular, the rotational motion and the vertical motion by the nozzle moving device 211 may be simultaneously performed, and react to substrates of various sizes and shapes for CVD thick film deposition that is radially installed around the gas injection part 210. The gas is evenly distributed, and uniform gas flow and distribution are promoted on all the substrate surfaces to produce a polycrystalline silicon carbide thick film or molded body of uniform thickness.

As described above, the present invention is a nozzle for injecting a reaction gas from the center of the reaction chamber toward the side surface is formed in a multi-stage gas injection part and a plurality of gas discharge parts on the side, and then rotates the nozzle of the gas injection part up and down Through the method of moving to, it is possible to uniformly distribute the gas inside the large-capacity CVD reaction chamber in which a large number of substrates of various sizes and shapes are installed for CVD thick film deposition.

As a result of manufacturing a silicon carbide molded body for substrates having various sizes and shapes using the large-capacity CVD apparatus according to the embodiment of the present invention described above, the gas injection unit optimized for the shape, size and installation state of each substrate Through the control of (210), a polycrystalline silicon carbide thick film or molded body of uniform thickness was produced on all the substrates.

The present invention has been described through preferred embodiments, but the above-described embodiments are merely illustrative of the technical idea of the present invention, and various changes are possible within the scope of the present invention. Anyone with ordinary knowledge will understand. Therefore, the protection scope of the present invention should be interpreted by the matters described in the claims, not by specific embodiments, and all technical ideas within the equivalent range should be interpreted as being included in the scope of the present invention.

100: reaction chamber
210: gas injection part
211: nozzle moving device
212: gas injector
213: first nozzle device
214: second nozzle device
215: third nozzle device
216: insulation
220: gas discharge unit

Claims (6)

As a large-capacity CVD apparatus capable of performing deposition on multiple substrates of various shapes and sizes,
A CVD reaction chamber in which a substrate is installed;
A gas injection unit installed at the center of the CVD reaction chamber to inject a reaction gas; And
It includes at least one gas discharge portion formed in the CVD reaction chamber,
The gas injection unit includes a nozzle for injecting a reaction gas toward the side of the CVD reaction chamber and a nozzle moving device capable of rotating the injection direction of the nozzle,
The gas injection unit is formed with a plurality of nozzles of different heights, the nozzle moving device is a large-capacity CVD apparatus, characterized in that to move the nozzle up and down.
The method according to claim 1,
Each of a plurality of nozzles of different heights are connected to individual reaction gas inlets,
A reaction gas inlet pipe connected to a nozzle located at a relatively upper position is inserted into a reaction gas inlet pipe connected to a nozzle positioned at a lower position,
A relatively high-capacity nozzle is installed through a side surface of a reaction gas inlet pipe connected to a relatively low-nozzle nozzle.
delete The method according to claim 1,
The gas injection part is a plurality of nozzles having different heights are arranged at equal intervals,
A large-capacity CVD apparatus characterized in that the total distance for moving the nozzle up and down in the nozzle moving apparatus is equal to the distance between nozzles having different heights.
The method according to claim 1,
The gas injection unit is a high-capacity CVD apparatus, characterized in that a plurality of nozzles having different injection directions are formed at the same height.
The method according to claim 5,
A plurality of nozzles having different injection directions are arranged at the same angle with each other,
Large-capacity CVD apparatus, characterized in that the angle of rotational movement of the nozzle in the nozzle moving device is equal to the angle between nozzles having different injection directions.

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