CN109735822A - Reaction chamber and semiconductor equipment - Google Patents
Reaction chamber and semiconductor equipment Download PDFInfo
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- CN109735822A CN109735822A CN201811354815.4A CN201811354815A CN109735822A CN 109735822 A CN109735822 A CN 109735822A CN 201811354815 A CN201811354815 A CN 201811354815A CN 109735822 A CN109735822 A CN 109735822A
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Abstract
Disclosing a kind of reaction chamber and semiconductor equipment, reaction chamber includes: chamber body；Base assembly in chamber body is set, and the base assembly includes metal heating disc and the grounding disc for ground connection, and metal heating disc has the loading end for carrying substrates；Processing component, external sediment ring including surrounding loading end, processing component is used to cooperatively form process area with base assembly, wherein, reaction chamber further includes ground loop, is connected between external sediment ring and the grounding disc, for providing the grounding path of external sediment ring to grounding disc when processing component and base assembly cooperatively form process area, external sediment ring discharges and causes spark phenomenon when can effectively solve the heating dish using metal material, is conducive to improve coating effects.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, relate more specifically to a kind of reaction chamber and semiconductor equipment.
Background technique
Physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) is under vacuum conditions, using physics side
Material source (solid or liquid) surface is gasificated into gaseous atom, molecule or partial ionization into ion by method, and passes through low-pressure gas
(or plasma) has the technology of the film of certain specific function in substrate surface deposition.The main method of physical vapour deposition (PVD)
There are vacuum evaporation, sputter coating, arc-plasma plating, ion film plating and molecular beam epitaxy etc..
In existing physical vapour deposition (PVD), place the substrates in positioned at the indoor electrostatic chuck of reaction chamber
The surface of (electrostatic chuck), reaction chamber can provide vacuum environment.In reaction chamber, by radio-frequency power supply
Voltage is provided for target with DC power supply, is exposed in inert gas (such as Ar) by the target of back bias voltage, noble gas discharge
Plasma is generated, the plasma bombardment target of generation sputters out target atom, the atom sputtered heap on substrate
Product is at deposition film.
The electrostatic chuck of the prior art generally uses stainless steel heater, and stainless steel heater is used to be easy as heating source
Cause processing component spark phenomenon occur during radio-frequency sputtering, influences coating effects.
Summary of the invention
In view of this, effectively solving the purpose of the present invention is to provide a kind of reaction chamber and semiconductor equipment using not
Processing component discharges and causes spark phenomenon when the heating dish for steel material of becoming rusty, and improves coating effects.
A kind of reaction chamber provided according to an aspect of the present invention, comprising: chamber body；It is arranged in chamber body
Base assembly, the base assembly include metal heating disc and the grounding disc for ground connection, and the metal heating disc, which has, to be used
In the loading end of carrying substrates；Processing component, the external sediment ring including surrounding the loading end, the processing component are used for and institute
State base assembly and cooperatively form process area, wherein the reaction chamber further includes ground loop, be connected to the external sediment ring with
And between the grounding disc, described in being provided when the processing component and the base assembly cooperatively form the process area
External sediment ring to the grounding disc grounding path.
Preferably, the processing component further includes the liner around the process area, wherein the ground loop is used for
The processing component provides the liner connecing to the grounding disc when cooperatively forming the process area with the base assembly
Ground path.
Preferably, the reaction chamber further includes contact, the contact be used to provide the described ground loop with it is described
Electrical contact between grounding disc.
Preferably, the reaction chamber further includes elastic construction, the elastic construction be used to provide the described ground loop with
Electrical contact between the liner.
Preferably, the ground loop includes: the cyclic structure around the base assembly；From described cyclic structure one end diameter
To the first extension extended inwardly, first extension includes the first surface for contacting with the external sediment ring；With
And the second extension radially extended from the other end of the cyclic structure, second extension include for it is described
The second surface that contact contacts and the third surface for fixing the elastic construction.
Preferably, the elastic construction is fixed on the third surface by fastening plates and multiple fasteners.
Preferably, the processing component further includes interior deposition ring, and the interior deposition ring surrounds the metal heating disc, to mention
For the electric isolution between the metal heating disc and the ground loop.
Preferably, the interior deposition ring is manufactured using insulating materials.
Preferably, the base assembly further includes separator, and the separator is located at the grounding disc and the metal adds
Between hot plate, the electric isolution that is used to provide the described between metal heating disc and the grounding disc.
Preferably, the separator includes ceramic disk.
Preferably, the contact includes beryllium copper reed.
Preferably, the elastic construction includes the copper sheet of bending, can under the extruding of the ground loop and the liner
Generate flexible deformation.
Preferably, the decrement of the elastic construction is 1-50mm.
A kind of semiconductor equipment provided according to another aspect of the present invention, including above-mentioned reaction chamber.
The reaction chamber and semiconductor equipment of the embodiment of the present invention provide external sediment ring using the ground loop of high conductive material
It efficiently solves to the grounding path of grounding disc so that external sediment ring is in zero potential during coating process using stainless
Coating effects can be improved in spark phenomenon caused by the electric discharge of external sediment ring when the heating dish of steel material, reduce process costs.
In a preferred embodiment, ground loop is connect with liner, provides the grounding path of liner to grounding disc, avoids plating
Spark phenomenon caused by liner electric discharge, can further improve coating effects during membrane process.
In a preferred embodiment, interior deposition ring is made using insulating materials resistant to high temperature, interior deposition ring realizes ground connection
Electric isolution between ring and heating dish can shield influence of the bias in heating dish to ground loop.
In a preferred embodiment, being isolated between heating dish and grounding disc, Ke Yiping are realized using the separator of insulation
Cover influence of the bias in heating dish to grounding disc.
In a preferred embodiment, it is connected between ground loop and grounding disc by beryllium copper reed, not only may be implemented to be grounded
The ground connection of ring, and the technology stability in reaction chamber can be improved with shielded radio frequency.
In a preferred embodiment, the decrement of elastic structure is 1-50mm, and the adjusting for increasing base assembly rising is empty
Between, increase the adjusting range of target and substrate spacing in coating process.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from.
Fig. 1 shows the schematic cross-section of semiconductor reaction chamber according to an embodiment of the present invention；
Fig. 2 shows the explosive views of the internal structure of semiconductor reaction chamber according to an embodiment of the present invention；
Fig. 3 shows the schematic cross-section and partial enlarged view of liner and external sediment ring according to an embodiment of the present invention；
Fig. 4 shows the schematic cross-section of interior deposition ring according to an embodiment of the present invention；
Fig. 5 shows the schematic cross-section and partial enlarged view of base assembly and ground loop according to an embodiment of the present invention；
Fig. 6 shows schematic cross-section of the semiconductor reaction chamber according to an embodiment of the present invention during coating process；
Fig. 7 shows the enlarged diagram according to a-quadrant in Fig. 6.
It include: reaction chamber 100 in figure；Chamber body 110；Side wall 102；Bottom wall 103；Substrate 105；Cover plate assembly 130；
Magnetron 131；Target backboard 132；Target 133；Feed terminal 135；Sealing ring 136；Base assembly 120；Elevating mechanism 121；Wave
Line pipe 122；Grounding disc 123；Separator 124；Heating dish 125；Processing component 150；Liner 151；External sediment ring 152；Isolation ring
153；Interior deposition ring 154；Ground loop 141；Elastic construction 142；Contact 143；Fastening plates 181；182 process area of fastener
210；Plasma 201；The source DC 171；The source RF 172；Controller 173；Gas source 174；Pump 175；First bending part 213；Second
Bending part 212；U-shaped channel 214；Loading end 251；First edge 252；Second edge 253；Cyclic annular wedge 221；Gap 222；First
Surface 321；Second surface 322；Third surface 323；Cyclic structure 211,223,224,231,261 and 272；Extension 232,
233,262 and 282；Plummer 271 and 281；Contact point 310 and 320.
Specific embodiment
Hereinafter reference will be made to the drawings, and the present invention will be described in more detail.In various figures, identical element is using similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.In addition, may not show in figure
Certain well known parts out.
Many specific details of the invention, such as structure, material, size, the processing work of component is described hereinafter
Skill and technology, to be more clearly understood that the present invention.But it just as the skilled person will understand, can not press
The present invention is realized according to these specific details.
It should be appreciated that being known as being located at another floor, another area when by a floor, a region when describing the structure of component
When domain " above " or " top ", can refer to above another layer, another region, or its with another layer, it is another
Also comprising other layers or region between a region.Also, if by part turnover, this layer, a region will be located at it is another
Layer, another region " following " or " lower section ".
Fig. 1 and Fig. 2 respectively illustrates the sectional view and internal structure of semiconductor reaction chamber according to an embodiment of the present invention
Enlarged drawing is illustrated referring to structure of the Fig. 1 and Fig. 2 to the semiconductor reaction chamber of the embodiment of the present invention.
Reaction chamber 100 is, for example, sputtering chamber, can pass through physical vapour deposition (PVD) (PVD) deposited metal or semiconductor
Material, such as deposition of aluminum, copper, tantalum, tantalum nitride, tantalum carbide, tungsten, tungsten nitride, lanthana and titanium etc..
As shown in Figure 1, reaction chamber 100 includes chamber body 110, base assembly 120 and processing component 150.
Chamber body 110 has side wall 102, bottom wall 103 and the cover plate assembly 130 for surrounding process area 210.Chamber master
Body 110 is for example made up of stainless steel welded or single aluminium.In the particular embodiment, side wall 102 further includes slit valve (figure
In be not shown), for providing outlet and entrance of the substrate 105 in reaction chamber 100.
Cover plate assembly 130 includes magnetron 131 and target backboard 132.Target backboard 132 in coating process for putting
Target 133 is set, and target 133 is exposed to the process area 210 of reaction chamber 100.Magnetron 131 with rotating mechanism is used
In the Ionization Efficiency of the raising inert gas in coating process, and exoelectrical reaction is maintained, plasma confinement is attached in target
Closely, make its effectively, equably bombard target, realize the uniformity of plated film.
Processing component 150 includes the multiple structures that can be replaced, and can remove the multiple structure from reaction chamber 100
With the sputtering sedimentation object on cleaning structure surface, replacement/repairing corrosion structure and according to the technological requirements adaptively adjustment reaction chamber
Room 100.
Processing component 150 include the liner 151 for surrounding process area 210, around base assembly 120 loading end it is outer heavy
Product ring 152 and interior deposition ring 154.
Liner 151 and external sediment ring 152 are arranged around process area 210, are used for isolation technology region 210 and chamber body
110, to reduce deposition of the sputtering sedimentation object in chamber body 110.
Interior deposition ring 154 is circumferentially extended around the heating dish 125 of base assembly 120, for realizing the exhausted of heating dish 125
Edge.
Processing component further includes isolation ring 153, and isolation ring 153 is set to target 133, target backboard 132 and chamber master
Between body 110, for realizing electrically isolating between target 133 and target backboard 132 and chamber body 110.
In addition, the vacuum leak inside reaction chamber 100 in order to prevent, reaction chamber 100 further includes sealing ring 136, close
Seal ring 136 is set between side wall 102, cover plate assembly 130 and isolation ring 153.
Base assembly 120 have carrying substrates 105 loading end, base assembly 120 be used for during coating process with place
Reason component 150 is matched to form the process area 210 for being located at 105 top of substrate.
Base assembly 120 is connect by elevating mechanism 121 with bottom wall 103, and elevating mechanism 121 was used in the coating process stage
Base assembly 120 is driven to move in the vertical direction, so that base assembly 120 is far from external sediment ring 152 (as shown in Figure 1),
Or close to external sediment ring 152 (as shown in Figure 6).When base assembly 120 is located at position as shown in Figure 1, lift pin is (in figure
Be not shown) it is mobile substrate 105 is separated with base assembly 120 by base assembly 120 so that wafer transfer mechanism can be with
Successfully exchange substrate, the wafer transfer mechanism (such as one armed robot) are set to the outside of reaction chamber 100.
Reaction chamber 100 further includes the bellows 122 being set between base assembly 120 and bottom wall 103, for realizing chamber
The inside and outside isolation of reaction chamber inside room main body 110.Bellows 122 is conductive, can provide base assembly 120 and chamber
Electrical connection between main body 110.
Fig. 3 shows the sectional view and partial enlarged view of liner and external sediment ring according to an embodiment of the present invention.Such as Fig. 3 institute
Show, it is interlaced between liner 151 and external sediment ring 152.
Liner 151 includes the cyclic structure 211 for surrounding process area 210, the upper end of cyclic structure 211 for be connected to every
From ring, cyclic structure 211 is used to cover the side wall 102 of chamber body, to protect the side wall 102 of chamber body far from sputtering sedimentation
The deposition of object.
Liner 151 further includes the first bending part 213 extended from the bottom end radial inward of cyclic structure 211 and from first
The second bending part 212 that bending part 213 is folded upward at.212 shape of cyclic structure 211, the first bending part 213 and the second bending part
At U-shaped channel 214.In one embodiment, the height of the second bending part 212 is less than the height of cyclic structure 211.
External sediment ring 152 and liner 151 cooperate heavy on the bottom wall of chamber body to reduce sputtering sedimentation object
Product.External sediment ring 152 is made of the material that can resist plasma attack, such as metal material (such as stainless steel, titanium or aluminium)
Or ceramic material (such as aluminium oxide).
External sediment ring 152 includes cyclic annular wedge 221, and cyclic annular wedge 221 is circumferentially extended around the edge of substrate 105.Cyclic annular wedge 221
Including the bevel structure that radial inward extends, which covers base assembly.
External sediment ring 152 further includes cyclic structure 223 and cyclic structure 224.Cyclic structure 223 is far from cyclic annular wedge 221
One end of base assembly 120 extends radially to the U-shaped channel 214 of liner 151 vertically downward.Cyclic structure 224 is from cyclic annular wedge 221
One end close to base assembly 120 radially extends vertically downward.Cyclic structure 223, cyclic annular wedge 221 and 224 shape of cyclic structure
At gap 222,212 part of the second bending part of liner 151 is located in gap 222.
Interval or gap between liner 151 and external sediment ring 152 form the S-shaped path advanced for plasma, this
Shape can hinder passing through for plasma, to confine a plasma in the area above substrate during coating process operates
Domain.
Fig. 4 shows the schematic cross-section of interior deposition ring 154 according to an embodiment of the present invention, referring to Fig. 1 and Fig. 4 to this
The structure of the interior deposition ring 154 of inventive embodiments is illustrated.
As shown in figure 4, interior deposition ring 154 includes cyclic structure 261 and extension 262.Cyclic structure 261 is in Fig. 1
Heating dish 125 circumferentially extend.Extension 262 radially extends from cyclic structure 261, and the edge of extension 262 extends to
The drape edge of separator 124.And the upper surface of extension 262 is lower than the upper surface of cyclic structure 261.In one embodiment
In, heating dish 125 may be implemented using insulating materials resistant to high temperature (quartz or ceramic material) manufacture in interior deposition ring 126
Insulation.
Fig. 5 shows the sectional view and partial enlarged view of base assembly and ground loop according to an embodiment of the present invention.
As shown in figure 5, base assembly 120 includes grounding disc 123, separator 124 and the heating dish 125 being sequentially stacked.
Heating dish 125 is hierarchic structure, and including the loading end 251 for carrying substrates 105, loading end 251 is for plating
Substrate is accepted and supports during membrane process, the surface is parallel with the sputtering surface of target.
Heating dish 125 further includes first edge 252 and second edge 253, and first edge 252 terminates at the pendency side of substrate
Before edge, second edge 253 is terminated at after the drape edge of substrate 105.
Separator 124 is concave structure, including the plummer 271 for carrying heating dish 125, and along plummer 271
The cyclic structure 272 that upwardly extends of edge, cyclic structure 272 forms the accommodating cavity of a upper opening in separator 124,
Heating dish 125 is located in the accommodating cavity, and cyclic structure 272 is circumferentially extended around the second edge 253 of heating dish 125.
Grounding disc 123 is hierarchic structure, including the plummer 281 for carrying separator 124, and along plummer 281
The extension 282 that radially extends of edge, the upper surface of extension 282 is lower than the upper surface of plummer 281.
In the present embodiment, heating dish 125 is electrostatic chuck, heater or a combination thereof.Heating dish 125 includes dielectric
Main body is embedded with electrode in the dielectric body.During coating process, heating dish 125 is in bias state, and grounding disc
123 are in zero potential state, and separator 124 is used to provide the electric isolution between heating dish 125 and grounding disc 123.In a reality
It applies in example, grounding disc 123 and heating dish 125 are usually to be manufactured by metal material (such as stainless steel or aluminium), separator 124 1
As be ceramic material manufacture.
In the present embodiment, heating dish 125 is manufactured using metal material (such as stainless steel or aluminium), in radio-frequency sputtering process
In be easy to cause external sediment ring or liner to discharge and cause spark phenomenon, influence coating effects.
In order to solve to cause spark phenomenon because of external sediment ring or liner electric discharge due to, reaction chamber 100 further includes ground loop
141, grounding path of the ground loop 141 for providing liner and external sediment ring in coating process operating process to grounding disc 123.
As shown in figure 5, ground loop 141 includes the cyclic structure 231 circumferentially extended around the edge of base assembly 120.
Ground loop 141 further includes the extension 232 extended from the upper end radial inward of cyclic structure 231.Extension 232 wraps
Include the first surface 321 for contacting with external sediment ring.Extension 232 at least partly covers interior deposition ring 154, interior deposition ring
154 can provide the electric isolution between ground loop 141 and heating dish 125.
Ground loop 141 further includes the extension 233 radially extended from the lower end of cyclic structure 231.Extension 233 wraps
Include the second surface 323 for contacting with contact 143 and the third surface 324 for fixing elastic construction 142.
Contact 143 is fixed on the extension 282 of grounding disc 123, for providing from ground loop 141 to grounding disc 123
Grounding path, contact 143 manufactured using high resiliency and conductive material (such as beryllium copper or stainless steel), can be in ground loop 141
Compression when being contacted with grounding disc 123, it is ensured that there is good electrical contact between ground loop 141 and grounding disc 123.Implement at one
In example, contact 143 is manufactured using beryllium copper reed, not only may insure the good electricity between ground loop 141 and grounding disc 123
Contact, and can be radiated with shielded radio frequency, be conducive to the stabilization for improving process environments in process area.
Elastic construction 142 is fixed on extension by fastening plates 181 and multiple fasteners (such as two fasteners) 182
On 233 third surface 324, for providing liner to the grounding path between ground loop 141.Fastener 182 be, for example, bolt,
Screw, rivet, welding one of object or other attachments.
In the present embodiment, elastic construction 142 is manufactured using high resiliency and conductive material (such as beryllium copper or stainless steel).?
In one embodiment, elastic construction 142 is the copper sheet of bending, when base assembly 120 is located at position shown in fig. 6, elasticity knot
Structure 142 is contacted with liner 151, and elastic construction 142 generates elastic force by compression, the elastic force ensure elastic construction 142 and liner 151 it
Between good electrical contact.
Height, width and the decrement of elastic construction 142 can be according to connecing between elastic construction 142 and liner 151
Touching amount and adaptively adjust.In one embodiment, the decrement of elastic construction 142 is 1-50mm, it is possible to increase base assembly 120
The adjusting space of rising is conducive to the adjusting range for improving target and substrate spacing in coating process.
In the present embodiment, ground loop 141 is manufactured using high conductive material (such as stainless steel or aluminium), provides liner
151 and external sediment ring 152 to grounding disc 123 grounding path.So that liner 151 and external sediment ring during coating process
152 are constantly in zero potential, because of external sediment ring 152 or liner 151 when efficiently solving the heating dish using stainless steel material
The spark phenomenon of electric discharge and initiation is conducive to improve coating effects.
Fig. 6 shows structural schematic diagram of the semiconductor reaction chamber according to an embodiment of the present invention during coating process.Such as
Shown in Fig. 6, reaction chamber 100 further includes the source DC (DC source) 171 connecting with chamber body 110, RF (Radio
Frequency, radio frequency) source 172, controller 173, gas source 174 and vacuum pump 175.The source DC 171 and the source RF 172 are connected to
Target 133, for providing rf bias and/or Dc bias to target 133 in the coating process stage.In one embodiment,
The source RF 172 is connect by feed terminal 135 with target 133, and feed terminal 135 is located at the left side or the right of 133 center line of target.
Controller 173 is used to control the process of the coating process of reaction chamber 100.In one embodiment, controller 173
Including being respectively used to the control source DC 171, the source RF 172, gas source 174 and the multiple instruction collection of vacuum pump 175.In a reality
It applies in example, controller 173 further includes operation monitoring programme, for monitoring the reaction process inside reaction chamber 100 in real time.
Gas source 174 is used to provide inert gas (such as Ar) to reaction chamber 100, and inert gas is passed through from gas source 174
By the process area 210 inside pipeline supply to reaction chamber 100.Noble gas discharge generation plasma 201, generation etc.
Gas ions 201 bombard target 133 and sputter out target atom, and the atom sputtered is piled into deposition film on substrate 105.?
In a kind of embodiment, gas source 174 can also be to providing reaction gas (such as oxygen, nitrogen etc.) inside reaction chamber 100, reaction
Gas can react with sputter material and be piled into deposition film on substrate 105.
Participate in reaction after gas and by-product discharged by discharge tube, in discharge tube have throttle valve with
Control the gas pressure inside reaction chamber 100.Discharge tube connects at least one vacuum pump 175, and vacuum pump 175 is used for will be anti-
Answering the environment set inside chamber 100 is vacuum environment.
It is that substrate 105 provides floating potential by base assembly 120 in coating process.Elevating mechanism 121 drives simultaneously
Base assembly 120 rises to position as shown in FIG. 6, and ground loop 141 and external sediment ring 152 are in contact point 310 as shown in Figure 7
Contact, ground loop 141 and contact 143 are constituted from external sediment ring 152 to the grounding path of grounding disc 123.
The elastic construction 142 being also secured on ground loop 141 rises, and elastic construction 142 and liner 151 are in such as Fig. 7 institute
The contact point 320 shown contacts, and elastic construction 142, ground loop 141 and contact 143 are constituted from liner 151 to grounding disc 123
Grounding path.
With the rising of liner 151 and external sediment ring 152, liner 151, external sediment ring 152 and substrate 105 constitute closed
Space, the plasma 201 formed in process area 210 is limited in the region of the top of substrate 105, can be to avoid process island
The leakage of 210 plasma of domain.
A kind of semiconductor equipment is provided according to another aspect of the present invention, and including above-mentioned reaction chamber, which is set
It is standby to pass through physical vapour deposition (PVD) (PVD) deposited metal or semiconductor material, such as deposition of aluminum, copper, tantalum, tantalum nitride, carbon
Change tantalum, tungsten, tungsten nitride, lanthana and titanium etc..
In conclusion the reaction chamber and semiconductor equipment of the embodiment of the present invention, are mentioned using the ground loop of high conductive material
It is effectively solved for the grounding path of external sediment ring to grounding disc so that external sediment ring is in zero potential during coating process
Using stainless steel material heating dish when external sediment ring electric discharge caused by spark phenomenon, can be improved coating effects, drop
Low process costs.
In a preferred embodiment, ground loop is connect with liner, provides the grounding path of liner to grounding disc, avoids plating
Spark phenomenon caused by liner electric discharge, can further improve coating effects during membrane process.
In a preferred embodiment, interior deposition ring is made using insulating materials resistant to high temperature, interior deposition ring realizes ground connection
Electric isolution between ring and heating dish can shield influence of the bias in heating dish to ground loop.
In a preferred embodiment, being isolated between heating dish and grounding disc, Ke Yiping are realized using the separator of insulation
Cover influence of the bias in heating dish to grounding disc.
In a preferred embodiment, it is connected between ground loop and grounding disc by beryllium copper reed, not only may be implemented to be grounded
The ground connection of ring, and the technology stability in reaction chamber can be improved with shielded radio frequency.
In a preferred embodiment, the decrement of elastic structure is 1-50mm, and the adjusting for increasing base assembly rising is empty
Between, increase the adjusting range of target and substrate spacing in coating process.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
It is as described above according to the embodiment of the present invention, these embodiments details all there is no detailed descriptionthe, also not
Limiting the invention is only the specific embodiment.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is principle and practical application in order to better explain the present invention, thus belonging to making
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its full scope and equivalent.
Claims (14)
1. a kind of reaction chamber characterized by comprising
Chamber body；
Base assembly in chamber body is set, and the base assembly includes metal heating disc and the ground connection for ground connection
Disk, the metal heating disc have the loading end for carrying substrates；
Processing component, the external sediment ring including surrounding the loading end, the processing component are used to cooperate with the base assembly
Formation process region,
Wherein, the reaction chamber further includes ground loop, is connected between the external sediment ring and the grounding disc, in institute
It states when processing component cooperatively forms the process area with the base assembly and provides the external sediment ring to the grounding disc
Grounding path.
2. reaction chamber according to claim 1, which is characterized in that the processing component further includes around the process island
The liner in domain,
Wherein, the ground loop is used for the offer when the processing component and the base assembly cooperatively form the process area
The liner to the grounding disc grounding path.
3. reaction chamber according to claim 2, which is characterized in that further include contact, the contact is for providing
Electrical contact between the ground loop and the grounding disc.
4. reaction chamber according to claim 3, which is characterized in that further include elastic construction, the elastic construction is used for
Electrical contact between the ground loop and the liner is provided.
5. reaction chamber according to claim 4, which is characterized in that the ground loop includes:
Around the cyclic structure of the base assembly；
The first extension extended from described cyclic structure one end radial inward, first extension include for it is described outer
The first surface of deposition ring contact；And
The second extension radially extended from the other end of the cyclic structure, second extension include for institute
State the second surface of contact contact and the third surface for fixing the elastic construction.
6. reaction chamber according to claim 5, which is characterized in that the elastic construction passes through fastening plates and multiple tight
Firmware is fixed on the third surface.
7. reaction chamber according to claim 1, which is characterized in that the processing component further includes interior deposition ring, described
Interior deposition ring surrounds the metal heating disc, to provide the electric isolution between the metal heating disc and the ground loop.
8. reaction chamber according to claim 7, which is characterized in that the interior deposition ring is manufactured using insulating materials.
9. reaction chamber according to claim 1, which is characterized in that the base assembly further includes separator, it is described every
Separation disc is used to provide the described between metal heating disc and the grounding disc between the grounding disc and the metal heating disc
Electric isolution.
10. reaction chamber according to claim 9, which is characterized in that the separator includes ceramic disk.
11. reaction chamber according to claim 3, which is characterized in that the contact includes beryllium copper reed.
12. reaction chamber according to claim 4, which is characterized in that the elastic construction includes the copper sheet of bending, in institute
Flexible deformation can be generated by stating under the extruding of ground loop and the liner.
13. reaction chamber according to claim 11, which is characterized in that the decrement of the elastic construction is 1-50mm.
14. a kind of semiconductor equipment characterized by comprising the described in any item reaction chambers of claim 1-13.
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| CN201811354815.4A CN109735822B (en) | 2018-11-14 | 2018-11-14 | Reaction chamber and semiconductor device |
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| CN201811354815.4A CN109735822B (en) | 2018-11-14 | 2018-11-14 | Reaction chamber and semiconductor device |
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| CN110923644A (en) * | 2020-02-12 | 2020-03-27 | 上海陛通半导体能源科技股份有限公司 | Physical vapor deposition apparatus for reactive sputtering |
| CN112017933A (en) * | 2019-05-31 | 2020-12-01 | 北京北方华创微电子装备有限公司 | Lining, reaction chamber and semiconductor processing equipment |
| CN112185786A (en) * | 2019-07-03 | 2021-01-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and grounding ring assembly for plasma processing apparatus |
| CN113308681A (en) * | 2021-05-21 | 2021-08-27 | 北京北方华创微电子装备有限公司 | Bearing device in semiconductor process equipment and semiconductor process equipment |
| CN114023620A (en) * | 2021-10-29 | 2022-02-08 | 德鸿半导体设备(浙江)有限公司 | Treatment station for treating substrates |
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| CN117604495B (en) * | 2024-01-24 | 2024-04-12 | 楚赟精工科技(上海)有限公司 | Vapor deposition equipment |
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| CN112017933B (en) * | 2019-05-31 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Liner, reaction chamber and semiconductor processing equipment |
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| CN114959620A (en) * | 2021-02-26 | 2022-08-30 | 鑫天虹(厦门)科技有限公司 | Thin film deposition equipment and wafer bearing disc thereof |
| CN115074679A (en) * | 2021-03-11 | 2022-09-20 | 台湾积体电路制造股份有限公司 | Method for forming semiconductor structure and physical vapor deposition device and method |
| CN113308681A (en) * | 2021-05-21 | 2021-08-27 | 北京北方华创微电子装备有限公司 | Bearing device in semiconductor process equipment and semiconductor process equipment |
| CN113308681B (en) * | 2021-05-21 | 2022-01-11 | 北京北方华创微电子装备有限公司 | Bearing device in semiconductor process equipment and semiconductor process equipment |
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| CN117604495B (en) * | 2024-01-24 | 2024-04-12 | 楚赟精工科技(上海)有限公司 | Vapor deposition equipment |
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