SG10201603048QA - Application of high power magnetron sputtering to through silicon via metallization - Google Patents

Application of high power magnetron sputtering to through silicon via metallization

Info

Publication number
SG10201603048QA
SG10201603048QA SG10201603048QA SG10201603048QA SG10201603048QA SG 10201603048Q A SG10201603048Q A SG 10201603048QA SG 10201603048Q A SG10201603048Q A SG 10201603048QA SG 10201603048Q A SG10201603048Q A SG 10201603048QA SG 10201603048Q A SG10201603048Q A SG 10201603048QA
Authority
SG
Singapore
Prior art keywords
electrically
semiconductor substrate
conductive material
pulses
target
Prior art date
Application number
SG10201603048QA
Inventor
Juergen Weichart
Stanislav Kadlec
Original Assignee
Oerlikon Advanced Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Advanced Technologies Ag filed Critical Oerlikon Advanced Technologies Ag
Publication of SG10201603048QA publication Critical patent/SG10201603048QA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32027—DC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A sputtering apparatus is provided n which a method of magnetically enhanced sputtering an electrically-conductive material onto interior surfaces of a trench can be performed, which includes providing a magnetic field adjacent to a target formed at least in part from the electrically-conductive material, and applying a DC voltage between an anode and the target as a plurality of pulses. A high-frequency signal is applied to the pedestal supporting the semiconductor substrate to generate a self-bias field adjacent to the semiconductor substrate. The high-frequency signal is applied to the pedestal in pulses, during periods of time that overlap with the periods during which the DC voltage pulses are applied. The periods of time that the high-frequency signals are applied include a duration that extends beyond termination of the DC voltage pulse applied between the anode and the target. During each DC voltage pulse the electrically-conductive material is sputter deposited onto the side walls of the trench formed in the semiconductor substrate.
SG10201603048QA 2007-10-26 2008-10-24 Application of high power magnetron sputtering to through silicon via metallization SG10201603048QA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98281707P 2007-10-26 2007-10-26

Publications (1)

Publication Number Publication Date
SG10201603048QA true SG10201603048QA (en) 2016-05-30

Family

ID=40348131

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201603048QA SG10201603048QA (en) 2007-10-26 2008-10-24 Application of high power magnetron sputtering to through silicon via metallization
SG2012077913A SG185321A1 (en) 2007-10-26 2008-10-24 Application of high power magnetron sputtering to through silicon via metallization

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012077913A SG185321A1 (en) 2007-10-26 2008-10-24 Application of high power magnetron sputtering to through silicon via metallization

Country Status (9)

Country Link
US (1) US8475634B2 (en)
EP (2) EP2426232B1 (en)
JP (1) JP5521136B2 (en)
KR (2) KR20160031034A (en)
CN (1) CN101896636B (en)
AT (1) ATE526432T1 (en)
SG (2) SG10201603048QA (en)
TW (1) TWI440731B (en)
WO (1) WO2009053479A2 (en)

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JP5373904B2 (en) 2009-07-17 2013-12-18 株式会社アルバック Deposition equipment
US9249498B2 (en) 2010-06-28 2016-02-02 Micron Technology, Inc. Forming memory using high power impulse magnetron sputtering
CN101838795B (en) * 2010-06-30 2011-07-20 哈尔滨工业大学 Ion implantation and deposit method of high-power composite pulse by magnetic control sputtering
CN102453881B (en) * 2010-10-27 2014-07-16 北京北方微电子基地设备工艺研究中心有限责任公司 PVD (physical vapor deposition) equipment and magnetron sputtering method
US9330975B2 (en) 2012-05-31 2016-05-03 Micron Technology, Inc. Integrated circuit substrates comprising through-substrate vias and methods of forming through-substrate vias
US9677168B2 (en) 2013-10-08 2017-06-13 TPK America, LLC Touch panel and method for manufacturing the same
US20170175247A1 (en) 2013-12-04 2017-06-22 Evatec Ag Sputtering source arrangement, sputtering system and method of manufacturing metal-coated plate-shaped substrates
US11008650B2 (en) * 2016-11-03 2021-05-18 Starfire Industries Llc Compact system for coupling RF power directly into RF linacs
US12009192B2 (en) * 2016-11-03 2024-06-11 Starfire Industries Llc System for coupling RF power into LINACs and bellows coating by magnetron sputtering with kick pulse
US20190088457A1 (en) * 2017-09-19 2019-03-21 Applied Materials, Inc. Sync controller for high impulse magnetron sputtering
CN111534806A (en) * 2020-06-30 2020-08-14 北京大学深圳研究生院 Hard coating and preparation method and application thereof
WO2023156117A1 (en) 2022-02-18 2023-08-24 Evatec Ag Vacuum layer deposition apparatus and method of depositing a layer on a substrate, especially on a substrate comprising indentations in the surface to be coated
US20240167147A1 (en) * 2022-11-18 2024-05-23 Applied Materials, Inc. Apparatus and methods for depositing material within a through via

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Also Published As

Publication number Publication date
JP5521136B2 (en) 2014-06-11
WO2009053479A3 (en) 2009-11-05
EP2201148A2 (en) 2010-06-30
TW200923116A (en) 2009-06-01
WO2009053479A2 (en) 2009-04-30
EP2426232A3 (en) 2012-06-27
JP2011500967A (en) 2011-01-06
EP2426232B1 (en) 2017-08-23
KR20100084664A (en) 2010-07-27
SG185321A1 (en) 2012-11-29
KR101603798B1 (en) 2016-03-15
TWI440731B (en) 2014-06-11
ATE526432T1 (en) 2011-10-15
KR20160031034A (en) 2016-03-21
EP2426232A2 (en) 2012-03-07
CN101896636A (en) 2010-11-24
US8475634B2 (en) 2013-07-02
US20090111216A1 (en) 2009-04-30
CN101896636B (en) 2013-01-02
EP2201148B1 (en) 2011-09-28

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