CN104160470B - 均匀的hipims涂敷方法 - Google Patents

均匀的hipims涂敷方法 Download PDF

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CN104160470B
CN104160470B CN201280063780.3A CN201280063780A CN104160470B CN 104160470 B CN104160470 B CN 104160470B CN 201280063780 A CN201280063780 A CN 201280063780A CN 104160470 B CN104160470 B CN 104160470B
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S·克拉斯尼策尔
H·鲁蒂吉尔
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements

Abstract

本发明涉及一种HIPIMS方法，通过该方法能够在涂敷室的高度上沉积均匀的层。在此使用两个分阴极。根据本发明，单独选择对这些分阴极施加的各个功率脉冲区间的长度，并且这样在涂敷室的高度上实现希望的涂层厚度轮廓。

Description

均匀的HIPIMS涂敷方法
技术领域
本发明涉及一种HIPIMS方法，通过该方法能够在涂敷室的高度范围上沉积均匀的层。
背景技术
所述HIPIMS方法涉及一种从气相进行的物理涂敷方法。确切说它是一种磁控管支持的溅射方法，其中给提供溅射材料的靶施加非常高的放电电流密度，使得在等离子体内产生高的电子密度并且大部分溅射的微粒被离子化。在这种情况下使用250W/cm2和2000W/cm2之间的功率密度并且因此对提供功率的发电机提出特别的要求。尤其不能够允许这样的功率持续地在靶上作用，因为会使其过热，从而使其损坏。因此必须使该功率脉冲化。在该功率脉冲内产生非常高的希望的放电密度并且靶被加热。而在脉冲间歇期间，靶能够重新冷却。脉冲持续时间和脉冲间歇必须如此相互协调，使得在靶上引入的平均功率不超过阈值。因此，对于HIPIMS需要能够以脉冲方式输出非常高功率的发电机。
如果为了涂敷工件而使用HIPIMS方法，则这些工件经常在整个可用的涂敷高度范围上分布。所述工件既指工具也指其他部件。在许多情况下重要的是，在所述工件上，不管在上面、在中间还是在下面设置，都用同样的层厚度和同样的层涂敷。尤其如在HIPIMS方法中当等离子体及其厚度对涂敷率有重要的影响时，这一目的不容易实现。这尤其是因为等离子体自身由包围它的环境影响，由此能够在涂敷室的高度范围上发生不同的涂敷率。通常在DC溅射的情况下尝试通过在高度范围上调整磁场来平衡。但是对磁系统的干预能够局部地导致等离子体条件的改变，这又导致不同的层特性。对于层厚度分布的高要求决定了使用区域受限(并且由此决定经济性减小)，这是因为关于所述方法的有效性限制层厚度均匀性的改善。校正层厚度分布的另一种方法是使用掩膜，不过如果负荷或者工件的几何结构改变的话这不太实用。
发明内容
值得期望的是使用下述那样的HIPIMS方法，通过该方法能够以简单的方式在涂敷室的高度范围上调整涂敷率从而尤其在整个室高度范围上实现均匀的涂层而不会不利地影响等离子体密度以及其对层特性起不利的作用。
把上述这点作为本发明的任务。
根据在另一个专利申请的范围内保护的提供功率脉冲的新方法规定，驱动包括第一分阴极和第二分阴极的PVD溅射阴极，其中对于这些分阴极预先规定最大的平均施加功率并且其中预先规定功率脉冲区间的持续时间，该方法包括下面的步骤：
a)提供发电机，其具有预先规定的优选至少在接通后和在经过一个功率建立区间后恒定的功率输出，
b)接通该发电机，
c)把第一分阴极连接在该发电机上，使得该第一分阴极加载有发电机的功率，
d)在经过预先规定的、与第一分阴极对应的第一功率脉冲区间后使发电机与第一分阴极分开，
e)把第二分阴极连接在发电机上，使得该第二分阴极加载有发电机的功率，
f)在经过预先规定的、与第二分阴极对应的第二功率脉冲区间后使发电机与第二分阴极分开，其特征在于，所述第一和第二分阴极被提供在涂敷室的高度范围上，而且一个功率脉冲区间的长度如此适应另一个功率脉冲区间的长度，使得由所述涂敷产生的层在所述涂敷室的高度范围上具有预先规定的层厚度分布。
其中第一功率脉冲区间在时间上在第二功率脉冲区间之前开始并且第一功率脉冲区间在时间上在第二功率脉冲区间之前结束，并且其中步骤d)和e)如此执行，使得第一功率脉冲区间和第二功率脉冲区间在时间上重叠并且所有功率脉冲区间一起构成第一组，使得发电机的功率输出连续不间断地从第一功率脉冲区间开始起直到第二功率脉冲区间结束止保持不变并且不发生第二功率建立区间。
如果在涂敷室的高度范围上提供多于两个分阴极，则可以组成由多于两个功率脉冲区间组成的组。在本方法中于是相继连接关于温度输入(Temperatureintrag)对各个分阴极预期的多个组。然后接着是间歇。
优选地，选择均匀的层厚度分布来作为预先规定的层厚度分布。可以使用多于两个分阴极并且对它们类似地应用步骤c)到f)。至少功率脉冲区间的相对长度借助所述涂敷之前的校准涂敷确定。
附图说明
图1表示具有6个分阴极和3个组的相应情形。
具体实施方式
根据本发明，现在该任务通过如下方式解决：单独选择各个功率脉冲区间的长度并且这样在涂敷室的高度范围上实现希望的涂层厚度轮廓。也就是说根据本发明不像通常那样调整在涂敷室的高度范围上的磁场，而是调整功率脉冲区间的持续时间。这相应地在图1中表示。可以看到，与第一分阴极关联的功率脉冲区间比与第五分阴极5关联的功率脉冲区间显著更长。由于较长的功率脉冲区间，基于第一分阴极1的平均涂敷率比基于第五分阴极5的平均涂敷率长。
在实践中例如可以这样规定：首先将全部分阴极的功率脉冲区间选择成同样长并且这样采用第一涂层进行校准。接着在涂敷室的高度范围上测量涂层厚度。如果在厚度上显示出差别，则在层与平均厚度比较过小的地方将功率脉冲区间延长一些。在层与平均厚度比较过大的地方将功率脉冲区间缩短一些。通过这一方式实现平衡，其中专业人员清楚的知道，可以执行多个迭代步骤来进一步改善均匀化。
本发明借助于在涂敷室的高度范围上对层厚度的均匀化来说明。但是它还应该如此理解，即当尤其还应该实现与均匀化偏离的层厚度轮廓时，通过必要的修正可以使用本发明的措施。

Claims (11)

1.用于从气相借助溅射在抽成真空的涂敷室内进行物理涂敷的方法，所述方法包括如下步骤：
a)提供发电机，其具有预先规定的恒定的功率输出，
b)接通该发电机，
c)把第一分阴极连接在该发电机上，使得该第一分阴极加载有发电机的功率，
d)在经过预先规定的、与第一分阴极对应的第一功率脉冲区间后使发电机与第一分阴极分开，
e) 把第二分阴极连接在发电机上，使得该第二分阴极加载有发电机的功率，
f) 在经过预先规定的、与第二分阴极对应的第二功率脉冲区间后使发电机与第二分阴极分开；
其特征在于，所述第一和第二分阴极被提供在涂敷室的高度范围上，而且一个功率脉冲区间的长度如此适应另一个功率脉冲区间的长度，使得由所述涂敷产生的层在所述涂敷室的高度范围上具有预先规定的层厚度分布。
2.根据权利要求1所述的方法，其特征在于，借助高功率脉冲磁控管溅射进行所述涂敷。
3.根据权利要求1所述的方法，其特征在于，所述发电机具有至少在接通后和在经过一个功率建立区间后恒定的功率输出。
4.根据权利要求1所述的方法，其特征在于，选择均匀的层厚度分布来作为预先规定的层厚度分布。
5.根据权利要求1-4之一所述的方法，其特征在于，第一功率脉冲区间在时间上在第二功率脉冲区间之前开始并且第一功率脉冲区间在时间上在第二功率脉冲区间之前结束，并且其中步骤d)和e)如此执行，使得第一功率脉冲区间和第二功率脉冲区间在时间上重叠并且所有功率脉冲区间一起构成第一组，使得发电机的功率输出连续不间断地从第一功率脉冲区间开始起直到第二功率脉冲区间结束止保持不变并且不发生第二功率建立区间。
6.根据权利要求5所述的方法，其特征在于，使用多于两个分阴极并且对它们类似地应用步骤c)到f)。
7.根据权利要求6所述的方法，其特征在于，至少功率脉冲区间的相对长度借助所述涂敷之前的校准涂敷确定。
8.根据权利要求5所述的方法，其特征在于，至少功率脉冲区间的相对长度借助所述涂敷之前的校准涂敷确定。
9.根据权利要求1-4之一所述的方法，其特征在于，使用多于两个分阴极并且对它们类似地应用步骤c)到f)。
10.根据权利要求9所述的方法，其特征在于，至少功率脉冲区间的相对长度借助所述涂敷之前的校准涂敷确定。
11.根据权利要求1-4之一所述的方法，其特征在于，至少功率脉冲区间的相对长度借助所述涂敷之前的校准涂敷确定。
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DE102011121770A DE102011121770A1 (de) 2011-12-21 2011-12-21 Homogenes HIPIMS-Beschichtungsverfahren
DE102011121770.7 2011-12-21
PCT/EP2012/004847 WO2013091761A1 (de) 2011-12-21 2012-11-23 Homogenes hipims-beschichtungsverfahren

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