MX341506B - Método de recubrimiento de hipims homogéneo. - Google Patents

Método de recubrimiento de hipims homogéneo.

Info

Publication number
MX341506B
MX341506B MX2014007668A MX2014007668A MX341506B MX 341506 B MX341506 B MX 341506B MX 2014007668 A MX2014007668 A MX 2014007668A MX 2014007668 A MX2014007668 A MX 2014007668A MX 341506 B MX341506 B MX 341506B
Authority
MX
Mexico
Prior art keywords
homogeneous
coating method
height
hipims coating
hipims
Prior art date
Application number
MX2014007668A
Other languages
English (en)
Other versions
MX2014007668A (es
Inventor
Krassnitzer Siegfried
Rudigier Helmut
Original Assignee
Oerlikon Surface Solutions Ag Pfäffikon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oerlikon Surface Solutions Ag Pfäffikon filed Critical Oerlikon Surface Solutions Ag Pfäffikon
Publication of MX2014007668A publication Critical patent/MX2014007668A/es
Publication of MX341506B publication Critical patent/MX341506B/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3417—Arrangements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Pretreatment Of Seeds And Plants (AREA)

Abstract

La presente invención se refiere a un método de HIPIMS a través del cual se pueden depositar capas homogéneas a lo largo de la altura de una cámara de recubrimiento. Se utilizan dos cátodos parciales para dicho propósito. De acuerdo con la presente invención, se eligen individualmente la longitud de los intervalos de pulsación de energía individuales aplicados a los cátodos parciales, y por lo tanto, se logra un perfil de grosor de recubrimiento requerido a lo largo de la altura de la cámara de recubrimiento.
MX2014007668A 2011-12-21 2012-11-23 Método de recubrimiento de hipims homogéneo. MX341506B (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011121770A DE102011121770A1 (de) 2011-12-21 2011-12-21 Homogenes HIPIMS-Beschichtungsverfahren
PCT/EP2012/004847 WO2013091761A1 (de) 2011-12-21 2012-11-23 Homogenes hipims-beschichtungsverfahren

Publications (2)

Publication Number Publication Date
MX2014007668A MX2014007668A (es) 2014-11-25
MX341506B true MX341506B (es) 2016-08-22

Family

ID=47520875

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2014007668A MX341506B (es) 2011-12-21 2012-11-23 Método de recubrimiento de hipims homogéneo.

Country Status (13)

Country Link
US (1) US10982321B2 (es)
EP (1) EP2795658A1 (es)
JP (1) JP6180431B2 (es)
KR (1) KR101934141B1 (es)
CN (1) CN104160470B (es)
BR (1) BR112014014793B1 (es)
CA (1) CA2859747C (es)
DE (1) DE102011121770A1 (es)
MX (1) MX341506B (es)
PH (1) PH12014501435B1 (es)
RU (1) RU2633516C2 (es)
SG (1) SG11201403396SA (es)
WO (1) WO2013091761A1 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011117177A1 (de) * 2011-10-28 2013-05-02 Oerlikon Trading Ag, Trübbach Verfahren zur Bereitstellung sequenzieller Leistungspulse
US11473189B2 (en) 2019-02-11 2022-10-18 Applied Materials, Inc. Method for particle removal from wafers through plasma modification in pulsed PVD

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4515668A (en) * 1984-04-25 1985-05-07 Honeywell Inc. Method of forming a dielectric layer comprising a gettering material
JPS6141766A (ja) * 1984-08-06 1986-02-28 Hitachi Ltd スパツタリング方法およびスパツタ−装置
DE3700633C2 (de) * 1987-01-12 1997-02-20 Reinar Dr Gruen Verfahren und Vorrichtung zum schonenden Beschichten elektrisch leitender Gegenstände mittels Plasma
JPH07116596B2 (ja) * 1989-02-15 1995-12-13 株式会社日立製作所 薄膜形成方法、及びその装置
DE19651615C1 (de) * 1996-12-12 1997-07-10 Fraunhofer Ges Forschung Verfahren zum Aufbringen von Kohlenstoffschichten durch reaktives Magnetron-Sputtern
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US7718042B2 (en) * 2004-03-12 2010-05-18 Oc Oerlikon Balzers Ag Method for manufacturing sputter-coated substrates, magnetron source and sputtering chamber with such source
JP2006124753A (ja) * 2004-10-27 2006-05-18 Bridgestone Corp Ｃｕ２Ｏ膜、その成膜方法及び太陽電池
DE102006017382A1 (de) * 2005-11-14 2007-05-16 Itg Induktionsanlagen Gmbh Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen
DE102006021565A1 (de) * 2005-12-20 2007-06-28 Itg Induktionsanlagen Gmbh Verfahren und Vorrichtung zum Erzeugen eines Magnetfeldsystems
US7691544B2 (en) * 2006-07-21 2010-04-06 Intel Corporation Measurement of a scattered light point spread function (PSF) for microelectronic photolithography
WO2008050618A1 (fr) * 2006-10-24 2008-05-02 Ulvac, Inc. Procédé de fabrication d'un film mince et dispositif de fabrication d'un film mince
US20080197015A1 (en) * 2007-02-16 2008-08-21 Terry Bluck Multiple-magnetron sputtering source with plasma confinement
JP5037475B2 (ja) * 2008-11-11 2012-09-26 株式会社神戸製鋼所 スパッタ装置
DE202010001497U1 (de) * 2010-01-29 2010-04-22 Hauzer Techno-Coating B.V. Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle
DE102010007515A1 (de) * 2010-02-11 2011-08-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Verfahren zum Betreiben einer großflächigen Kathode für Plasmaprozesse mit hohem Ionisierungsgrad
DE102010007516A1 (de) * 2010-02-11 2011-08-11 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Großflächige Kathode für Plasmaprozesse mit hohem Ionisierungsgrad
DE102011117177A1 (de) * 2011-10-28 2013-05-02 Oerlikon Trading Ag, Trübbach Verfahren zur Bereitstellung sequenzieller Leistungspulse
DE102011018363A1 (de) * 2011-04-20 2012-10-25 Oerlikon Trading Ag, Trübbach Hochleistungszerstäubungsquelle

Also Published As

Publication number Publication date
PH12014501435A1 (en) 2014-09-22
CN104160470A (zh) 2014-11-19
PH12014501435B1 (en) 2014-09-22
JP2015508448A (ja) 2015-03-19
CA2859747A1 (en) 2013-06-27
US10982321B2 (en) 2021-04-20
MX2014007668A (es) 2014-11-25
KR20140116102A (ko) 2014-10-01
RU2014129572A (ru) 2016-02-10
CN104160470B (zh) 2017-01-18
BR112014014793B1 (pt) 2021-08-10
DE102011121770A1 (de) 2013-06-27
EP2795658A1 (de) 2014-10-29
SG11201403396SA (en) 2014-12-30
JP6180431B2 (ja) 2017-08-16
KR101934141B1 (ko) 2018-12-31
US20150001063A1 (en) 2015-01-01
CA2859747C (en) 2019-12-31
BR112014014793A2 (pt) 2017-06-13
RU2633516C2 (ru) 2017-10-13
WO2013091761A1 (de) 2013-06-27

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