JP2011514666A5 - - Google Patents

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Publication number
JP2011514666A5
JP2011514666A5 JP2010545461A JP2010545461A JP2011514666A5 JP 2011514666 A5 JP2011514666 A5 JP 2011514666A5 JP 2010545461 A JP2010545461 A JP 2010545461A JP 2010545461 A JP2010545461 A JP 2010545461A JP 2011514666 A5 JP2011514666 A5 JP 2011514666A5
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JP
Japan
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semiconductor material
formula
melting
different
generator
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JP2010545461A
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English (en)
Japanese (ja)
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JP2011514666A (ja
JP5468554B2 (ja
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Priority claimed from PCT/EP2009/051298 external-priority patent/WO2009098248A2/de
Publication of JP2011514666A publication Critical patent/JP2011514666A/ja
Publication of JP2011514666A5 publication Critical patent/JP2011514666A5/ja
Application granted granted Critical
Publication of JP5468554B2 publication Critical patent/JP5468554B2/ja
Expired - Fee Related legal-status Critical Current
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JP2010545461A 2008-02-07 2009-02-05 熱電応用のためのドープテルル化スズを含む半導体材料 Expired - Fee Related JP5468554B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP08151149.5 2008-02-07
EP08151149 2008-02-07
PCT/EP2009/051298 WO2009098248A2 (de) 2008-02-07 2009-02-05 Dotierte zinntelluride fuer thermoelektrische anwendungen

Publications (3)

Publication Number Publication Date
JP2011514666A JP2011514666A (ja) 2011-05-06
JP2011514666A5 true JP2011514666A5 (enExample) 2012-04-12
JP5468554B2 JP5468554B2 (ja) 2014-04-09

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ID=40822924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010545461A Expired - Fee Related JP5468554B2 (ja) 2008-02-07 2009-02-05 熱電応用のためのドープテルル化スズを含む半導体材料

Country Status (9)

Country Link
US (1) US8772622B2 (enExample)
EP (1) EP2250126A2 (enExample)
JP (1) JP5468554B2 (enExample)
KR (1) KR20110004362A (enExample)
CN (1) CN101965313A (enExample)
CA (1) CA2715040A1 (enExample)
RU (1) RU2010137002A (enExample)
TW (1) TW200950165A (enExample)
WO (1) WO2009098248A2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8716589B2 (en) * 2006-03-16 2014-05-06 Basf Aktiengesellschaft Doped lead tellurides for thermoelectric applications
SG174453A1 (en) 2009-03-24 2011-10-28 Basf Se Self-organising thermoelectric materials
US8871175B2 (en) * 2010-10-01 2014-10-28 The Boeing Company Nanomaterial having tunable infrared absorption characteristics and associated method of manufacture
CN102496676B (zh) * 2011-11-18 2014-09-10 遵义师范学院 铌掺杂铋-锑系低温热电材料及其制备方法
KR102001062B1 (ko) 2012-01-16 2019-10-01 삼성전자주식회사 나노복합체형 열전재료, 이를 포함하는 열전모듈과 열전장치
KR101442018B1 (ko) * 2013-04-10 2014-09-24 국방과학연구소 알칼리 및 알칼리 토금속이 첨가된 화합물 및 이 화합물을 합성하여 제조되는 열전재료
KR101760834B1 (ko) 2015-10-07 2017-08-01 서울대학교산학협력단 칼코겐화합물 열전소재 및 이를 포함하는 열전소자
CN113165873A (zh) * 2018-12-04 2021-07-23 住友化学株式会社 化合物和热电转换材料
WO2020116388A1 (ja) * 2018-12-04 2020-06-11 住友化学株式会社 化合物及び熱電変換材料
CN111517292A (zh) * 2020-04-30 2020-08-11 西华大学 一种碲化锡基热电材料及其制备方法
TWI792310B (zh) * 2021-05-13 2023-02-11 國立中興大學 高效能熱電材料

Family Cites Families (19)

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Publication number Priority date Publication date Assignee Title
US3880674A (en) * 1970-01-20 1975-04-29 Rockwell International Corp Thermoelectric elements and devices and process therefor
US4076572A (en) 1973-07-05 1978-02-28 Hughes Aircraft Company Crystal growth and anneal of lead tin telluride by recrystallization from a heterogeneous system
US5439528A (en) 1992-12-11 1995-08-08 Miller; Joel Laminated thermo element
CN1034252C (zh) * 1993-05-06 1997-03-12 莎莫波尼克株式会社 热电式冷却装置、其所用半导体制备方法及热电式冷冻机
JPH077186A (ja) * 1993-06-16 1995-01-10 Idemitsu Material Kk 熱電変換材料の製造法
US5448109B1 (en) 1994-03-08 1997-10-07 Tellurex Corp Thermoelectric module
AU6783598A (en) 1997-03-31 1998-10-22 Research Triangle Institute Thin-film thermoelectric device and fabrication method of same
DE19955788A1 (de) 1999-11-19 2001-05-23 Basf Ag Thermoelektrisch aktive Materialien und diese enthaltende Generatoren
JP2002026405A (ja) * 2000-07-03 2002-01-25 Sanyo Electric Co Ltd 熱電材料の製造方法、熱電材料及び熱電材料製造装置
WO2003096438A2 (en) * 2002-05-08 2003-11-20 Massachusetts Institute Of Technology Self-assembled quantum dot superlattice thermoelectric materials and devices
CN100452466C (zh) * 2003-09-12 2009-01-14 密歇根州州立大学托管委员会 热电材料及其制备方法、热电元件以及从热能生成电流的方法
WO2006085929A2 (en) * 2004-06-14 2006-08-17 Delphi Technologies, Inc. Thermoelectric materials comprising nanoscale inclusions to enhance seebeck coefficient
JP4630012B2 (ja) 2004-06-30 2011-02-09 財団法人電力中央研究所 鉛・テルル系熱電材料および熱電素子
DE102005027680A1 (de) 2005-06-15 2006-12-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines aus einem thermoelektrischen Trägermaterial mit thermischen Streuzentren bestehenden thermoelektrischen Werkstoffes und thermoelektrischer Werkstoff
WO2007104603A2 (de) 2006-03-16 2007-09-20 Basf Se Blei-germanium-telluride fuer thermoelektrische anwendungen
US8716589B2 (en) * 2006-03-16 2014-05-06 Basf Aktiengesellschaft Doped lead tellurides for thermoelectric applications
KR100904588B1 (ko) * 2007-07-05 2009-06-25 삼성전자주식회사 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자
JP5027061B2 (ja) * 2008-06-16 2012-09-19 株式会社東海理化電機製作所 スイッチ装置
RU2011138927A (ru) 2009-02-25 2013-04-10 Басф Се Способ изготовления гибких металлических контактов

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