JP5468554B2 - 熱電応用のためのドープテルル化スズを含む半導体材料 - Google Patents
熱電応用のためのドープテルル化スズを含む半導体材料 Download PDFInfo
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- JP5468554B2 JP5468554B2 JP2010545461A JP2010545461A JP5468554B2 JP 5468554 B2 JP5468554 B2 JP 5468554B2 JP 2010545461 A JP2010545461 A JP 2010545461A JP 2010545461 A JP2010545461 A JP 2010545461A JP 5468554 B2 JP5468554 B2 JP 5468554B2
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- temperature
- thermoelectric
- melting
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
- Y02P20/129—Energy recovery, e.g. by cogeneration, H2recovery or pressure recovery turbines
Description
として知られている。非常に低い熱伝導率、非常に高い電気伝導率及び非常に大きいゼーベック係数を有し、性能指数が最大値を取るような熱電材料が好ましい。
から計算される。
SnaPb1-a(x1+…+xn)A1 x1...An xn(Te1-p-q-rSepSqXr)1+z (I)
[但し、式中、
0.1<a<0.9、
n≧1(但し、nはSn及びPbとは異なる化学元素の数である)、
いずれの場合も独立して、
1 ppm≦x1...xn≦0.05、
n=2では、A1...Anは互いに異なり、Ti、Zr、Hf、Mn、Ag、Geからなる群から選択され、又はn=1では、A 1 ...A n は互いに異なり、Ti、Zr、Mn、Agからなる群から選択され、
Xは、F、Cl、Br又はIであり、
a+x1+...+xn≦1、及びx1...xnの合計が0.0005〜0.1の条件において、
0≦p≦1、
0≦q≦1、
0≦r≦0.01、
−0.01≦z≦0.01である]
で表される化合物を含むことを特徴とするp−又はn−導電性の半導体材料によって達成される。
(1)特定の元素成分又はそれらの合金と、少なくとも4元素又は3元素の化合物との混合物を共溶融する工程、
(2)工程(1)で得られた材料を粉砕する工程、
(3)工程(2)で得られた材料を加圧又は押出して成形する工程、及び
(4)工程(3)で得られた成形品を焼結する工程、
を含む方法を挙げることができる。
・ヒートポンプとして、
・シーティング家具(seating furniture)、車両、及び建築物の環境制御用(climate control)に、
・冷蔵庫及び(洗濯物)乾燥機中に、
・例えば、
−吸収、
−乾燥、
−結晶化、
−蒸発、
−蒸留等の物質分離工程における、同時に起こる流れの加熱及び冷却用に、
・例えば、
−太陽エネルギー
−地熱
−化石燃料の燃焼の熱
−車両及び固定機器の廃熱源
−生物学的熱源等の熱源利用による発電装置として
・電子部品の冷却用に、
・例えば、自動車、暖房装置又は発電所において、熱エネルギーを電気エネルギーに変換する発電装置として、使用する方法にも関する。
Claims (6)
- 一般式(I)
SnaPb1-a(x1+...+xn)A1 x1...An xn(Te1-p-q-rSepSqXr)1+z (I)
[但し、式中、
0.2<a<0.75、
nが1又は2であり(但し、nはSn及びPbとは異なる化学元素の数である)、
いずれの場合も独立して、
1 ppm≦x1...xn≦0.05、
n=2では、A1...Anは互いに異なり、Ti、Zr、Hf、Ag、Geからなる群から選択され、又はn=1では、A1...Anは互いに異なり、Ti、Zr、Agからなる群から選択され、
Xは、F、Cl、Br又はIであり、
a+x1+...+xn≦1、及びx1...xnの合計が0.001〜0.08の条件において、
p=0、
q=0、
r=0、
−0.01≦z≦0.01である]
で表される化合物を含むことを特徴とするp−又はn−導電性の半導体材料。 - 請求項1に記載の半導体材料を製造する方法であって、
特定の元素成分又はそれらの合金の混合物を反応性粉砕、又は共溶融することにより材料を製造する工程を含む製造方法。 - 前記共溶融が、誘導加熱オーブン中で行われる請求項2に記載の製造方法。
- 以下の工程:
(1)特定の元素成分又はそれらの合金と、少なくとも4元素又は3元素の化合物との混合物を共溶融する工程、
(2)工程(1)で得られた材料を粉砕する工程、
(3)工程(2)で得られた材料を加圧又は押出して成形する工程、及び
(4)工程(3)で得られた成形品を焼結する工程、
を含む請求項2又は3に記載の製造方法。 - 請求項1に記載の半導体材料を含む熱電発電装置又はペルチェ配置。
- 請求項5に記載の熱電発電装置又はペルチェ配置を少なくとも1種含むヒートポンプ、冷却機、冷蔵庫、(洗濯物)乾燥機、熱源利用による発電機、熱エネルギーを電気エネルギーに変換する発電機。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08151149 | 2008-02-07 | ||
EP08151149.5 | 2008-02-07 | ||
PCT/EP2009/051298 WO2009098248A2 (de) | 2008-02-07 | 2009-02-05 | Dotierte zinntelluride fuer thermoelektrische anwendungen |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011514666A JP2011514666A (ja) | 2011-05-06 |
JP2011514666A5 JP2011514666A5 (ja) | 2012-04-12 |
JP5468554B2 true JP5468554B2 (ja) | 2014-04-09 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2010545461A Expired - Fee Related JP5468554B2 (ja) | 2008-02-07 | 2009-02-05 | 熱電応用のためのドープテルル化スズを含む半導体材料 |
Country Status (9)
Country | Link |
---|---|
US (1) | US8772622B2 (ja) |
EP (1) | EP2250126A2 (ja) |
JP (1) | JP5468554B2 (ja) |
KR (1) | KR20110004362A (ja) |
CN (1) | CN101965313A (ja) |
CA (1) | CA2715040A1 (ja) |
RU (1) | RU2010137002A (ja) |
TW (1) | TW200950165A (ja) |
WO (1) | WO2009098248A2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101364895B1 (ko) * | 2006-03-16 | 2014-02-19 | 바스프 에스이 | 열전기적 용도의 도핑된 납 텔루라이드 |
US8785762B2 (en) | 2009-03-24 | 2014-07-22 | Basf Se | Self-organising thermoelectric materials |
US8871175B2 (en) * | 2010-10-01 | 2014-10-28 | The Boeing Company | Nanomaterial having tunable infrared absorption characteristics and associated method of manufacture |
CN102496676B (zh) * | 2011-11-18 | 2014-09-10 | 遵义师范学院 | 铌掺杂铋-锑系低温热电材料及其制备方法 |
KR102001062B1 (ko) | 2012-01-16 | 2019-10-01 | 삼성전자주식회사 | 나노복합체형 열전재료, 이를 포함하는 열전모듈과 열전장치 |
KR101442018B1 (ko) * | 2013-04-10 | 2014-09-24 | 국방과학연구소 | 알칼리 및 알칼리 토금속이 첨가된 화합물 및 이 화합물을 합성하여 제조되는 열전재료 |
KR101760834B1 (ko) | 2015-10-07 | 2017-08-01 | 서울대학교산학협력단 | 칼코겐화합물 열전소재 및 이를 포함하는 열전소자 |
US20220033273A1 (en) * | 2018-12-04 | 2022-02-03 | Sumitomo Chemical Company, Limited | Compound and Thermoelectric Conversion Material |
JP7148635B2 (ja) * | 2018-12-04 | 2022-10-05 | 住友化学株式会社 | 化合物及び熱電変換材料 |
CN111517292A (zh) * | 2020-04-30 | 2020-08-11 | 西华大学 | 一种碲化锡基热电材料及其制备方法 |
TWI792310B (zh) * | 2021-05-13 | 2023-02-11 | 國立中興大學 | 高效能熱電材料 |
Family Cites Families (19)
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US3880674A (en) * | 1970-01-20 | 1975-04-29 | Rockwell International Corp | Thermoelectric elements and devices and process therefor |
US4076572A (en) * | 1973-07-05 | 1978-02-28 | Hughes Aircraft Company | Crystal growth and anneal of lead tin telluride by recrystallization from a heterogeneous system |
US5439528A (en) | 1992-12-11 | 1995-08-08 | Miller; Joel | Laminated thermo element |
CN1034252C (zh) * | 1993-05-06 | 1997-03-12 | 莎莫波尼克株式会社 | 热电式冷却装置、其所用半导体制备方法及热电式冷冻机 |
JPH077186A (ja) * | 1993-06-16 | 1995-01-10 | Idemitsu Material Kk | 熱電変換材料の製造法 |
US5448109B1 (en) | 1994-03-08 | 1997-10-07 | Tellurex Corp | Thermoelectric module |
US6300150B1 (en) | 1997-03-31 | 2001-10-09 | Research Triangle Institute | Thin-film thermoelectric device and fabrication method of same |
DE19955788A1 (de) | 1999-11-19 | 2001-05-23 | Basf Ag | Thermoelektrisch aktive Materialien und diese enthaltende Generatoren |
JP2002026405A (ja) * | 2000-07-03 | 2002-01-25 | Sanyo Electric Co Ltd | 熱電材料の製造方法、熱電材料及び熱電材料製造装置 |
WO2003096438A2 (en) * | 2002-05-08 | 2003-11-20 | Massachusetts Institute Of Technology | Self-assembled quantum dot superlattice thermoelectric materials and devices |
WO2005036660A2 (en) * | 2003-09-12 | 2005-04-21 | Board Of Trustees Operating Michigan State University | Silver-containing thermoelectric compounds |
US7365265B2 (en) | 2004-06-14 | 2008-04-29 | Delphi Technologies, Inc. | Thermoelectric materials comprising nanoscale inclusions to enhance seebeck coefficient |
JP4630012B2 (ja) * | 2004-06-30 | 2011-02-09 | 財団法人電力中央研究所 | 鉛・テルル系熱電材料および熱電素子 |
DE102005027680A1 (de) | 2005-06-15 | 2006-12-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung eines aus einem thermoelektrischen Trägermaterial mit thermischen Streuzentren bestehenden thermoelektrischen Werkstoffes und thermoelektrischer Werkstoff |
KR101364895B1 (ko) * | 2006-03-16 | 2014-02-19 | 바스프 에스이 | 열전기적 용도의 도핑된 납 텔루라이드 |
WO2007104603A2 (de) | 2006-03-16 | 2007-09-20 | Basf Se | Blei-germanium-telluride fuer thermoelektrische anwendungen |
KR100904588B1 (ko) * | 2007-07-05 | 2009-06-25 | 삼성전자주식회사 | 코어/쉘 형태의 나노와이어를 제조하는 방법, 그에 의해제조된 나노와이어 및 이를 포함하는 나노와이어 소자 |
JP5027061B2 (ja) * | 2008-06-16 | 2012-09-19 | 株式会社東海理化電機製作所 | スイッチ装置 |
KR20110121709A (ko) | 2009-02-25 | 2011-11-08 | 바스프 에스이 | 가요성 금속 접점의 제조 방법 |
-
2009
- 2009-02-05 CA CA2715040A patent/CA2715040A1/en not_active Abandoned
- 2009-02-05 JP JP2010545461A patent/JP5468554B2/ja not_active Expired - Fee Related
- 2009-02-05 WO PCT/EP2009/051298 patent/WO2009098248A2/de active Application Filing
- 2009-02-05 RU RU2010137002/05A patent/RU2010137002A/ru not_active Application Discontinuation
- 2009-02-05 KR KR1020107019118A patent/KR20110004362A/ko not_active Application Discontinuation
- 2009-02-05 US US12/866,552 patent/US8772622B2/en not_active Expired - Fee Related
- 2009-02-05 EP EP09708165A patent/EP2250126A2/de not_active Withdrawn
- 2009-02-05 CN CN2009801080848A patent/CN101965313A/zh active Pending
- 2009-02-06 TW TW098103903A patent/TW200950165A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
US20110012069A1 (en) | 2011-01-20 |
RU2010137002A (ru) | 2012-03-20 |
WO2009098248A3 (de) | 2010-02-25 |
EP2250126A2 (de) | 2010-11-17 |
JP2011514666A (ja) | 2011-05-06 |
CN101965313A (zh) | 2011-02-02 |
US8772622B2 (en) | 2014-07-08 |
CA2715040A1 (en) | 2009-08-13 |
KR20110004362A (ko) | 2011-01-13 |
TW200950165A (en) | 2009-12-01 |
WO2009098248A2 (de) | 2009-08-13 |
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