JP2011507719A5 - - Google Patents

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Publication number
JP2011507719A5
JP2011507719A5 JP2010540928A JP2010540928A JP2011507719A5 JP 2011507719 A5 JP2011507719 A5 JP 2011507719A5 JP 2010540928 A JP2010540928 A JP 2010540928A JP 2010540928 A JP2010540928 A JP 2010540928A JP 2011507719 A5 JP2011507719 A5 JP 2011507719A5
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JP
Japan
Prior art keywords
wafer
double side
side grinder
grinding
nanotopography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010540928A
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English (en)
Japanese (ja)
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JP2011507719A (ja
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Publication date
Priority claimed from US11/967,743 external-priority patent/US7930058B2/en
Application filed filed Critical
Publication of JP2011507719A publication Critical patent/JP2011507719A/ja
Publication of JP2011507719A5 publication Critical patent/JP2011507719A5/ja
Pending legal-status Critical Current

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JP2010540928A 2007-12-31 2008-12-29 ゆがみデータからのフィードバックを用いたナノトポグラフィーの制御及び最適化 Pending JP2011507719A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/967,743 US7930058B2 (en) 2006-01-30 2007-12-31 Nanotopography control and optimization using feedback from warp data
PCT/US2008/088452 WO2009088832A1 (en) 2007-12-31 2008-12-29 Nanotopography control and optimization using feedback from warp data

Publications (2)

Publication Number Publication Date
JP2011507719A JP2011507719A (ja) 2011-03-10
JP2011507719A5 true JP2011507719A5 (enExample) 2011-05-26

Family

ID=40538746

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010540928A Pending JP2011507719A (ja) 2007-12-31 2008-12-29 ゆがみデータからのフィードバックを用いたナノトポグラフィーの制御及び最適化

Country Status (7)

Country Link
US (2) US7930058B2 (enExample)
EP (1) EP2225070B1 (enExample)
JP (1) JP2011507719A (enExample)
KR (1) KR20100110803A (enExample)
CN (1) CN101909817A (enExample)
TW (1) TWI446992B (enExample)
WO (1) WO2009088832A1 (enExample)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005095054A1 (en) * 2004-03-19 2005-10-13 Memc Electronic Materials, Inc. Wafer clamping device for a double side grinder
US7544112B1 (en) * 2006-12-13 2009-06-09 Huffman Corporation Method and apparatus for removing coatings from a substrate using multiple sequential steps
US8221199B2 (en) * 2007-01-11 2012-07-17 Smith Abrasives, Inc Abrasive sharpener
DE102007056628B4 (de) * 2007-03-19 2019-03-14 Siltronic Ag Verfahren und Vorrichtung zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
US8214178B2 (en) * 2008-06-04 2012-07-03 Vibration Technologies, Llc Method and system for optimizing the vibrational characteristics of a structure
US8360817B2 (en) * 2009-04-01 2013-01-29 Ebara Corporation Polishing apparatus and polishing method
DE102009024125B4 (de) * 2009-06-06 2023-07-27 Lapmaster Wolters Gmbh Verfahren zum Bearbeiten von flachen Werkstücken
US8815110B2 (en) * 2009-09-16 2014-08-26 Cabot Microelectronics Corporation Composition and method for polishing bulk silicon
US8883034B2 (en) * 2009-09-16 2014-11-11 Brian Reiss Composition and method for polishing bulk silicon
US8697576B2 (en) * 2009-09-16 2014-04-15 Cabot Microelectronics Corporation Composition and method for polishing polysilicon
JP5504901B2 (ja) 2010-01-13 2014-05-28 株式会社Ｓｕｍｃｏ 研磨パッドの形状修正方法
US8712575B2 (en) * 2010-03-26 2014-04-29 Memc Electronic Materials, Inc. Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder
JP5862492B2 (ja) * 2012-07-09 2016-02-16 信越半導体株式会社 半導体ウェーハの評価方法及び製造方法
JP5896884B2 (ja) * 2012-11-13 2016-03-30 信越半導体株式会社 両面研磨方法
US9601395B2 (en) * 2012-12-28 2017-03-21 Sunedison Semiconductor Limited (Uen201334164H) Methods for post-epitaxial warp prediction and control
US9881783B2 (en) * 2013-02-19 2018-01-30 Sumco Corporation Method for processing semiconductor wafer
US9490186B2 (en) * 2013-11-27 2016-11-08 Applied Materials, Inc. Limiting adjustment of polishing rates during substrate polishing
US9375824B2 (en) * 2013-11-27 2016-06-28 Applied Materials, Inc. Adjustment of polishing rates during substrate polishing with predictive filters
CN104108062B (zh) * 2014-06-17 2017-06-06 北京石晶光电科技股份有限公司济源分公司 一种超薄晶片纳米级抛光方法
JP6447472B2 (ja) * 2015-11-26 2019-01-09 株式会社Sumco ウェーハ研磨方法
TWI779986B (zh) * 2016-11-30 2022-10-01 美商應用材料股份有限公司 使用神經網路的光譜監測
JP6443520B1 (ja) * 2017-10-02 2018-12-26 株式会社Sumco 半導体ウェーハの評価方法および該方法を用いた半導体ウェーハの製造方法
JP6436255B1 (ja) * 2018-02-27 2018-12-12 株式会社Sumco シリコンウェーハの反り量の予測方法およびシリコンウェーハの製造方法
CN108493116A (zh) * 2018-03-13 2018-09-04 英特尔产品（成都）有限公司 置球模块的制造方法及该方法制造的置球模块
DE102018221922A1 (de) 2018-12-17 2020-06-18 Siltronic Ag Verfahren zur Herstellung von Halbleiterscheiben mittels einer Drahtsäge, Drahtsäge und Halbleiterscheibe aus einkristallinem Silizium
CN110193776B (zh) * 2019-06-11 2020-07-03 英特尔半导体(大连)有限公司 晶圆抛光的抛光压力控制方法、装置和设备
US11415971B2 (en) 2020-02-10 2022-08-16 Globalwafers Co., Ltd. Systems and methods for enhanced wafer manufacturing
TWI763112B (zh) * 2020-04-22 2022-05-01 財團法人工業技術研究院 研磨拋光模擬方法、系統及研磨拋光製程轉移方法
US12174596B2 (en) * 2020-04-22 2024-12-24 Industrial Technology Research Institute Grinding and polishing simulation method and system and grinding and polishing process transferring method
CN112071765B (zh) * 2020-08-18 2024-07-30 中环领先(徐州)半导体材料有限公司 确定晶圆加工参数的方法和晶圆的加工方法
CN112259442B (zh) * 2020-09-11 2024-05-24 中环领先(徐州)半导体材料有限公司 晶圆双面减薄的方法和装置、存储介质
US12386340B2 (en) 2022-02-25 2025-08-12 Globalwafers Co., Ltd. Systems and methods for generating post-polishing topography for enhanced wafer manufacturing
CN115194639B (zh) * 2022-06-30 2023-12-29 江西兆驰半导体有限公司 一种蓝宝石衬底片切割后的分类加工方法及外延片
CN116175397A (zh) * 2022-12-13 2023-05-30 西安奕斯伟材料科技有限公司 一种用于研磨硅片的设备和方法

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2448751A (en) 1946-08-10 1948-09-07 Volkel Bros Machine Works Record edging lathe
KR920002268A (ko) * 1990-07-17 1992-02-28 유끼노리 가까즈 인텔리젠트가공장치
US5402354A (en) * 1990-10-12 1995-03-28 Mitsubishi Jukogyo Kabushiki Kaisha Control apparatus and control method for machine tools using fuzzy reasoning
JPH0577159A (ja) * 1991-09-18 1993-03-30 Mitsubishi Heavy Ind Ltd 研削盤の被削材たわみ量演算方法
US5700180A (en) * 1993-08-25 1997-12-23 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing
JP3386548B2 (ja) * 1994-01-31 2003-03-17 トヨタ自動車株式会社 フィードバック式加工条件補正装置
JP3702496B2 (ja) * 1995-07-10 2005-10-05 三菱電機株式会社 数値制御装置を用いた加工方法
KR100227924B1 (ko) 1995-07-28 1999-11-01 가이데 히사오 반도체 웨이퍼 제조방법, 그 방법에 사용되는 연삭방법 및 이에 사용되는 장치
JP3620554B2 (ja) * 1996-03-25 2005-02-16 信越半導体株式会社 半導体ウェーハ製造方法
US5989108A (en) 1996-09-09 1999-11-23 Koyo Machine Industries Co., Ltd. Double side grinding apparatus for flat disklike work
US6594542B1 (en) * 1996-10-04 2003-07-15 Applied Materials, Inc. Method and system for controlling chemical mechanical polishing thickness removal
US5816895A (en) 1997-01-17 1998-10-06 Tokyo Seimitsu Co., Ltd. Surface grinding method and apparatus
EP0875809A3 (en) * 1997-04-28 2000-09-06 Seiko Seiki Kabushiki Kaisha CAD/CAM apparatus and machining apparatus
JPH11198009A (ja) * 1998-01-13 1999-07-27 Koyo Mach Ind Co Ltd 薄板円板状ワークの両面研削装置および断面形状測定装置
JPH11254282A (ja) 1998-03-04 1999-09-21 Super Silicon Kenkyusho:Kk 両頭研削装置及び両頭研磨装置
JP2000015557A (ja) * 1998-04-27 2000-01-18 Ebara Corp 研磨装置
JP3292835B2 (ja) * 1998-05-06 2002-06-17 信越半導体株式会社 薄板ワークの平面研削方法およびその研削装置
US6875085B2 (en) 1998-11-06 2005-04-05 Mosel Vitelic, Inc. Polishing system including a hydrostatic fluid bearing support
US6428388B2 (en) * 1998-11-06 2002-08-06 Beaver Creek Concepts Inc. Finishing element with finishing aids
JP3951496B2 (ja) 1999-03-30 2007-08-01 光洋機械工業株式会社 薄板円板状ワークの両面研削装置
JP3969956B2 (ja) 1999-05-07 2007-09-05 信越半導体株式会社 両面同時研削方法および両面同時研削盤並びに両面同時ラップ方法および両面同時ラップ盤
US6198294B1 (en) * 1999-05-17 2001-03-06 Vlsi Technology, Inc. In-situ backgrind wafer thickness monitor
WO2001021356A1 (fr) 1999-09-24 2001-03-29 Shin-Etsu Handotai Co., Ltd. Procede et dispositif de meulage des deux faces d'un disque fin
US6479386B1 (en) 2000-02-16 2002-11-12 Memc Electronic Materials, Inc. Process for reducing surface variations for polished wafer
US6368881B1 (en) * 2000-02-29 2002-04-09 International Business Machines Corporation Wafer thickness control during backside grind
US20010024877A1 (en) * 2000-03-17 2001-09-27 Krishna Vepa Cluster tool systems and methods for processing wafers
US20020052169A1 (en) * 2000-03-17 2002-05-02 Krishna Vepa Systems and methods to significantly reduce the grinding marks in surface grinding of semiconductor wafers
DE10023002B4 (de) * 2000-05-11 2006-10-26 Siltronic Ag Satz von Läuferscheiben sowie dessen Verwendung
US20020086625A1 (en) * 2000-05-23 2002-07-04 Wafer Solutions, Inc. Vacuum mount wafer polishing methods and apparatus
US6556884B1 (en) * 2000-06-16 2003-04-29 Advanced Micro Devices, Inc. Method and apparatus for interfacing a statistical process control system with a manufacturing process control framework
US7332437B2 (en) * 2000-06-29 2008-02-19 Shin-Etsu Handotai Co., Ltd. Method for processing semiconductor wafer and semiconductor wafer
EP1307321A2 (en) 2000-08-07 2003-05-07 MEMC Electronic Materials, Inc. Method for processing a semiconductor wafer using double-side polishing
US6709981B2 (en) * 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
US6556876B1 (en) * 2000-10-12 2003-04-29 National Semiconductor Corporation Hybrid fuzzy closed-loop sub-micron critical dimension control in wafer manufacturing
GB2368971B (en) * 2000-11-11 2005-01-05 Pure Wafer Ltd Process for Reclaimimg Wafer Substrates
US6672943B2 (en) * 2001-01-26 2004-01-06 Wafer Solutions, Inc. Eccentric abrasive wheel for wafer processing
JP2002307303A (ja) 2001-04-10 2002-10-23 Koyo Mach Ind Co Ltd 薄板円板状ワークの両面研削方法および装置
JP2002343772A (ja) * 2001-05-18 2002-11-29 Speedfam Co Ltd 局所プラズマエッチング方法
US20020185053A1 (en) 2001-05-24 2002-12-12 Lu Fei Method for calibrating nanotopographic measuring equipment
US6594024B1 (en) * 2001-06-21 2003-07-15 Advanced Micro Devices, Inc. Monitor CMP process using scatterometry
JP4876345B2 (ja) * 2001-08-22 2012-02-15 株式会社ニコン シミュレーション方法及び装置、並びに、これを用いた研磨方法及び装置
DE10142400B4 (de) 2001-08-30 2009-09-03 Siltronic Ag Halbleiterscheibe mit verbesserter lokaler Ebenheit und Verfahren zu deren Herstellung
US6914000B2 (en) * 2001-09-04 2005-07-05 Matsushita Electric Industrial Co., Ltd. Polishing method, polishing system and process-managing system
JP3995926B2 (ja) 2001-09-18 2007-10-24 株式会社富士通長野システムエンジニアリング 構造解析プログラム、構造解析方法、構造解析装置および半導体集積回路の製造方法
US6630360B2 (en) * 2002-01-10 2003-10-07 Advanced Micro Devices, Inc. Advanced process control (APC) of copper thickness for chemical mechanical planarization (CMP) optimization
DE10208165C1 (de) 2002-02-26 2003-10-02 Advanced Micro Devices Inc Verfahren, Steuerung und Vorrichtung zum Steuern des chemisch-mechanischen Polierens von Substraten
US6613591B1 (en) * 2002-03-07 2003-09-02 Memc Electronic Materials, Inc. Method of estimating post-polishing waviness characteristics of a semiconductor wafer
DE10314212B4 (de) * 2002-03-29 2010-06-02 Hoya Corp. Verfahren zur Herstellung eines Maskenrohlings, Verfahren zur Herstellung einer Transfermaske
US7363099B2 (en) * 2002-06-07 2008-04-22 Cadence Design Systems, Inc. Integrated circuit metrology
JP4464033B2 (ja) * 2002-06-13 2010-05-19 信越半導体株式会社 半導体ウエーハの形状評価方法及び形状評価装置
US7416962B2 (en) * 2002-08-30 2008-08-26 Siltronic Corporation Method for processing a semiconductor wafer including back side grinding
EP1616662B1 (en) 2002-10-09 2009-03-11 Koyo Machine Industries Co., Ltd. Both side grinding method and both side grinder of thin disc-like work
EP1457828A3 (en) 2003-03-10 2009-04-22 ASML Netherlands B.V. Focus spot monitoring in a lithographic projection apparatus
US7118446B2 (en) * 2003-04-04 2006-10-10 Strasbaugh, A California Corporation Grinding apparatus and method
TWI224037B (en) * 2003-12-30 2004-11-21 Ind Tech Res Inst Grinder structure for wafer
DE102004005702A1 (de) * 2004-02-05 2005-09-01 Siltronic Ag Halbleiterscheibe, Vorrichtung und Verfahren zur Herstellung der Halbleiterscheibe
DE102004011996B4 (de) 2004-03-11 2007-12-06 Siltronic Ag Vorrichtung zum simultanen beidseitigen Schleifen von scheibenförmigen Werkstücken
WO2005095054A1 (en) 2004-03-19 2005-10-13 Memc Electronic Materials, Inc. Wafer clamping device for a double side grinder
JP4163145B2 (ja) * 2004-04-30 2008-10-08 株式会社ルネサステクノロジ ウェハの研磨方法
WO2005123335A1 (en) * 2004-06-21 2005-12-29 Ebara Corporation Polishing apparatus and polishing method
US7814456B2 (en) * 2004-11-22 2010-10-12 Tela Innovations, Inc. Method and system for topography-aware reticle enhancement
JP2006228843A (ja) * 2005-02-16 2006-08-31 Renesas Technology Corp 半導体デバイスのプロセス制御方法および製造方法
US7810383B2 (en) * 2005-04-08 2010-10-12 Shin-Etsu Handotai Co., Ltd. Method for evaluating semiconductor wafer, apparatus for evaluating semiconductor wafer, and method for manufacturing semiconductor wafer
US20070006652A1 (en) 2005-07-06 2007-01-11 Abnaki Systems, Inc. Load measuring sensor and method
US7636611B2 (en) 2005-10-28 2009-12-22 Samsung Austin Semiconductor, L.P. Fuzzy logic system for process control in chemical mechanical polishing
WO2007130708A1 (en) 2006-01-30 2007-11-15 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
US7601049B2 (en) * 2006-01-30 2009-10-13 Memc Electronic Materials, Inc. Double side wafer grinder and methods for assessing workpiece nanotopology
JP2008010818A (ja) * 2006-06-01 2008-01-17 Sumitomo Electric Ind Ltd 基板、基板検査方法、素子および基板の製造方法
DE102007056628B4 (de) * 2007-03-19 2019-03-14 Siltronic Ag Verfahren und Vorrichtung zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben
JP4985451B2 (ja) * 2008-02-14 2012-07-25 信越半導体株式会社 ワークの両頭研削装置およびワークの両頭研削方法

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