JP2011507719A - ゆがみデータからのフィードバックを用いたナノトポグラフィーの制御及び最適化 - Google Patents
ゆがみデータからのフィードバックを用いたナノトポグラフィーの制御及び最適化 Download PDFInfo
- Publication number
- JP2011507719A JP2011507719A JP2010540928A JP2010540928A JP2011507719A JP 2011507719 A JP2011507719 A JP 2011507719A JP 2010540928 A JP2010540928 A JP 2010540928A JP 2010540928 A JP2010540928 A JP 2010540928A JP 2011507719 A JP2011507719 A JP 2011507719A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- nanotopography
- ground
- double side
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005457 optimization Methods 0.000 title description 11
- 238000000034 method Methods 0.000 claims description 57
- 238000005259 measurement Methods 0.000 claims description 35
- 238000005498 polishing Methods 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000012545 processing Methods 0.000 claims description 11
- 238000005530 etching Methods 0.000 claims description 5
- 238000001914 filtration Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 209
- 230000006870 function Effects 0.000 description 16
- 230000002706 hydrostatic effect Effects 0.000 description 16
- 238000003860 storage Methods 0.000 description 12
- 239000012530 fluid Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 6
- 238000006731 degradation reaction Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003908 quality control method Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004441 surface measurement Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/28—Work carriers for double side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/967,743 US7930058B2 (en) | 2006-01-30 | 2007-12-31 | Nanotopography control and optimization using feedback from warp data |
| PCT/US2008/088452 WO2009088832A1 (en) | 2007-12-31 | 2008-12-29 | Nanotopography control and optimization using feedback from warp data |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2011507719A true JP2011507719A (ja) | 2011-03-10 |
| JP2011507719A5 JP2011507719A5 (enExample) | 2011-05-26 |
Family
ID=40538746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010540928A Pending JP2011507719A (ja) | 2007-12-31 | 2008-12-29 | ゆがみデータからのフィードバックを用いたナノトポグラフィーの制御及び最適化 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US7930058B2 (enExample) |
| EP (1) | EP2225070B1 (enExample) |
| JP (1) | JP2011507719A (enExample) |
| KR (1) | KR20100110803A (enExample) |
| CN (1) | CN101909817A (enExample) |
| TW (1) | TWI446992B (enExample) |
| WO (1) | WO2009088832A1 (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150084764A (ko) * | 2012-11-13 | 2015-07-22 | 신에쯔 한도타이 가부시키가이샤 | 양면 연마 방법 |
| JP2016505214A (ja) * | 2012-12-28 | 2016-02-18 | サンエディソン・セミコンダクター・リミテッドSunEdison Semiconductor Limited | エピタキシャル後反りの予測および制御方法 |
| JP2019067952A (ja) * | 2017-10-02 | 2019-04-25 | 株式会社Sumco | 半導体ウェーハの評価方法および該方法を用いた半導体ウェーハの製造方法 |
| JP2023513276A (ja) * | 2020-02-10 | 2023-03-30 | グローバルウェーハズ カンパニー リミテッド | 強化されたウエハ製造のためのシステムおよび方法 |
Families Citing this family (30)
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| WO2005095054A1 (en) * | 2004-03-19 | 2005-10-13 | Memc Electronic Materials, Inc. | Wafer clamping device for a double side grinder |
| US7544112B1 (en) * | 2006-12-13 | 2009-06-09 | Huffman Corporation | Method and apparatus for removing coatings from a substrate using multiple sequential steps |
| US8221199B2 (en) * | 2007-01-11 | 2012-07-17 | Smith Abrasives, Inc | Abrasive sharpener |
| DE102007056628B4 (de) * | 2007-03-19 | 2019-03-14 | Siltronic Ag | Verfahren und Vorrichtung zum gleichzeitigen Schleifen mehrerer Halbleiterscheiben |
| US8214178B2 (en) * | 2008-06-04 | 2012-07-03 | Vibration Technologies, Llc | Method and system for optimizing the vibrational characteristics of a structure |
| US8360817B2 (en) * | 2009-04-01 | 2013-01-29 | Ebara Corporation | Polishing apparatus and polishing method |
| DE102009024125B4 (de) * | 2009-06-06 | 2023-07-27 | Lapmaster Wolters Gmbh | Verfahren zum Bearbeiten von flachen Werkstücken |
| US8815110B2 (en) * | 2009-09-16 | 2014-08-26 | Cabot Microelectronics Corporation | Composition and method for polishing bulk silicon |
| US8883034B2 (en) * | 2009-09-16 | 2014-11-11 | Brian Reiss | Composition and method for polishing bulk silicon |
| US8697576B2 (en) * | 2009-09-16 | 2014-04-15 | Cabot Microelectronics Corporation | Composition and method for polishing polysilicon |
| JP5504901B2 (ja) | 2010-01-13 | 2014-05-28 | 株式会社Sumco | 研磨パッドの形状修正方法 |
| US8712575B2 (en) * | 2010-03-26 | 2014-04-29 | Memc Electronic Materials, Inc. | Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder |
| JP5862492B2 (ja) * | 2012-07-09 | 2016-02-16 | 信越半導体株式会社 | 半導体ウェーハの評価方法及び製造方法 |
| US9881783B2 (en) * | 2013-02-19 | 2018-01-30 | Sumco Corporation | Method for processing semiconductor wafer |
| US9490186B2 (en) * | 2013-11-27 | 2016-11-08 | Applied Materials, Inc. | Limiting adjustment of polishing rates during substrate polishing |
| US9375824B2 (en) * | 2013-11-27 | 2016-06-28 | Applied Materials, Inc. | Adjustment of polishing rates during substrate polishing with predictive filters |
| CN104108062B (zh) * | 2014-06-17 | 2017-06-06 | 北京石晶光电科技股份有限公司济源分公司 | 一种超薄晶片纳米级抛光方法 |
| JP6447472B2 (ja) * | 2015-11-26 | 2019-01-09 | 株式会社Sumco | ウェーハ研磨方法 |
| TWI779986B (zh) * | 2016-11-30 | 2022-10-01 | 美商應用材料股份有限公司 | 使用神經網路的光譜監測 |
| JP6436255B1 (ja) * | 2018-02-27 | 2018-12-12 | 株式会社Sumco | シリコンウェーハの反り量の予測方法およびシリコンウェーハの製造方法 |
| CN108493116A (zh) * | 2018-03-13 | 2018-09-04 | 英特尔产品(成都)有限公司 | 置球模块的制造方法及该方法制造的置球模块 |
| DE102018221922A1 (de) | 2018-12-17 | 2020-06-18 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben mittels einer Drahtsäge, Drahtsäge und Halbleiterscheibe aus einkristallinem Silizium |
| CN110193776B (zh) * | 2019-06-11 | 2020-07-03 | 英特尔半导体(大连)有限公司 | 晶圆抛光的抛光压力控制方法、装置和设备 |
| TWI763112B (zh) * | 2020-04-22 | 2022-05-01 | 財團法人工業技術研究院 | 研磨拋光模擬方法、系統及研磨拋光製程轉移方法 |
| US12174596B2 (en) * | 2020-04-22 | 2024-12-24 | Industrial Technology Research Institute | Grinding and polishing simulation method and system and grinding and polishing process transferring method |
| CN112071765B (zh) * | 2020-08-18 | 2024-07-30 | 中环领先(徐州)半导体材料有限公司 | 确定晶圆加工参数的方法和晶圆的加工方法 |
| CN112259442B (zh) * | 2020-09-11 | 2024-05-24 | 中环领先(徐州)半导体材料有限公司 | 晶圆双面减薄的方法和装置、存储介质 |
| US12386340B2 (en) | 2022-02-25 | 2025-08-12 | Globalwafers Co., Ltd. | Systems and methods for generating post-polishing topography for enhanced wafer manufacturing |
| CN115194639B (zh) * | 2022-06-30 | 2023-12-29 | 江西兆驰半导体有限公司 | 一种蓝宝石衬底片切割后的分类加工方法及外延片 |
| CN116175397A (zh) * | 2022-12-13 | 2023-05-30 | 西安奕斯伟材料科技有限公司 | 一种用于研磨硅片的设备和方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007130708A1 (en) * | 2006-01-30 | 2007-11-15 | Memc Electronic Materials, Inc. | Double side wafer grinder and methods for assessing workpiece nanotopology |
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2007
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2008
- 2008-12-29 KR KR1020107014398A patent/KR20100110803A/ko not_active Ceased
- 2008-12-29 WO PCT/US2008/088452 patent/WO2009088832A1/en not_active Ceased
- 2008-12-29 JP JP2010540928A patent/JP2011507719A/ja active Pending
- 2008-12-29 EP EP08869803.0A patent/EP2225070B1/en active Active
- 2008-12-29 CN CN2008801235079A patent/CN101909817A/zh active Pending
- 2008-12-31 TW TW097151687A patent/TWI446992B/zh active
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2010
- 2010-09-27 US US12/891,357 patent/US8145342B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007130708A1 (en) * | 2006-01-30 | 2007-11-15 | Memc Electronic Materials, Inc. | Double side wafer grinder and methods for assessing workpiece nanotopology |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20150084764A (ko) * | 2012-11-13 | 2015-07-22 | 신에쯔 한도타이 가부시키가이샤 | 양면 연마 방법 |
| KR102004701B1 (ko) * | 2012-11-13 | 2019-07-29 | 신에쯔 한도타이 가부시키가이샤 | 양면 연마 방법 |
| JP2016505214A (ja) * | 2012-12-28 | 2016-02-18 | サンエディソン・セミコンダクター・リミテッドSunEdison Semiconductor Limited | エピタキシャル後反りの予測および制御方法 |
| JP2019067952A (ja) * | 2017-10-02 | 2019-04-25 | 株式会社Sumco | 半導体ウェーハの評価方法および該方法を用いた半導体ウェーハの製造方法 |
| JP2023513276A (ja) * | 2020-02-10 | 2023-03-30 | グローバルウェーハズ カンパニー リミテッド | 強化されたウエハ製造のためのシステムおよび方法 |
| JP7661348B2 (ja) | 2020-02-10 | 2025-04-14 | グローバルウェーハズ カンパニー リミテッド | 強化されたウエハ製造のためのシステムおよび方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20080166948A1 (en) | 2008-07-10 |
| US7930058B2 (en) | 2011-04-19 |
| TW200946284A (en) | 2009-11-16 |
| EP2225070B1 (en) | 2014-02-12 |
| EP2225070A1 (en) | 2010-09-08 |
| TWI446992B (zh) | 2014-08-01 |
| KR20100110803A (ko) | 2010-10-13 |
| CN101909817A (zh) | 2010-12-08 |
| US20110045740A1 (en) | 2011-02-24 |
| US8145342B2 (en) | 2012-03-27 |
| WO2009088832A1 (en) | 2009-07-16 |
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