JP6447472B2 - ウェーハ研磨方法 - Google Patents
ウェーハ研磨方法 Download PDFInfo
- Publication number
- JP6447472B2 JP6447472B2 JP2015230350A JP2015230350A JP6447472B2 JP 6447472 B2 JP6447472 B2 JP 6447472B2 JP 2015230350 A JP2015230350 A JP 2015230350A JP 2015230350 A JP2015230350 A JP 2015230350A JP 6447472 B2 JP6447472 B2 JP 6447472B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- polishing
- pressure
- nanotopography
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims description 172
- 238000000034 method Methods 0.000 title claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 11
- 235000012431 wafers Nutrition 0.000 description 151
- 239000012528 membrane Substances 0.000 description 19
- 238000003754 machining Methods 0.000 description 12
- 238000003825 pressing Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
10 研磨ヘッド
11 回転軸
12 加圧フランジ
14 リテーナリング
16 メンブレン
18 メンブレン加圧ライン
21 回転定盤
22 研磨パッド
W ウェーハ
Z1-Z7 圧力ゾーン
Claims (4)
- ウェーハの押圧面が複数の圧力ゾーンに区画され、各圧力ゾーンを独立に加圧制御可能なマルチゾーン加圧方式の研磨ヘッドを備えたウェーハ研磨装置を用いてウェーハの表面を鏡面研磨するウェーハ研磨方法であって、
ウェーハの表面のナノトポグラフィマップを測定する測定ステップと、
前記ナノトポグラフィマップの測定結果に基づいて前記ウェーハに対する前記研磨ヘッドの研磨圧力を圧力ゾーンごとに設定して研磨加工を実施する研磨ステップとを有し、
前記研磨ステップは、ナノトポグラフィが大きい領域ほど当該領域に対する前記研磨圧力が小さくなるように当該研磨圧力を制御することを特徴とするウェーハ研磨方法。 - ナノトポグラフィの大きさと当該ナノトポグラフィが形成されたウェーハに対する適切な研磨圧力との換算式を予め用意しておき、前記ナノトポグラフィマップの測定結果と前記換算式から各圧力ゾーンの研磨圧力を算出する、請求項1に記載のウェーハ研磨方法。
- 同じ圧力ゾーンに属する複数のサイトナノトポグラフィの平均値から当該圧力ゾーンの研磨圧力を算出する、請求項1または2に記載のウェーハ研磨方法。
- 前記複数の圧力ゾーンは同心円状に区画されている、請求項1ないし3のいずれか一項に記載のウェーハ研磨方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015230350A JP6447472B2 (ja) | 2015-11-26 | 2015-11-26 | ウェーハ研磨方法 |
TW105134002A TWI680507B (zh) | 2015-11-26 | 2016-10-21 | 晶圓研磨方法 |
DE112016005417.3T DE112016005417B4 (de) | 2015-11-26 | 2016-11-04 | Waferpolierverfahren |
PCT/JP2016/082763 WO2017090406A1 (ja) | 2015-11-26 | 2016-11-04 | ウェーハ研磨方法 |
CN201680066639.7A CN108475627B (zh) | 2015-11-26 | 2016-11-04 | 晶圆抛光方法 |
US15/776,266 US11075085B2 (en) | 2015-11-26 | 2016-11-04 | Wafer polishing method |
KR1020187013751A KR102047814B1 (ko) | 2015-11-26 | 2016-11-04 | 웨이퍼 연마 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015230350A JP6447472B2 (ja) | 2015-11-26 | 2015-11-26 | ウェーハ研磨方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017098446A JP2017098446A (ja) | 2017-06-01 |
JP6447472B2 true JP6447472B2 (ja) | 2019-01-09 |
Family
ID=58763989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015230350A Active JP6447472B2 (ja) | 2015-11-26 | 2015-11-26 | ウェーハ研磨方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US11075085B2 (ja) |
JP (1) | JP6447472B2 (ja) |
KR (1) | KR102047814B1 (ja) |
CN (1) | CN108475627B (ja) |
DE (1) | DE112016005417B4 (ja) |
TW (1) | TWI680507B (ja) |
WO (1) | WO2017090406A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017210450A1 (de) * | 2017-06-21 | 2018-12-27 | Siltronic Ag | Verfahren, Steuerungssystem und Anlage zum Bearbeiten einer Halbleiterscheibe sowie Halbleiterscheibe |
CN108908063A (zh) * | 2018-07-20 | 2018-11-30 | 清华大学 | 根据耗材生命周期调整抛光压力的控制方法和控制系统 |
CN110962039A (zh) | 2018-09-29 | 2020-04-07 | 康宁股份有限公司 | 载体晶片和形成载体晶片的方法 |
DE102018221922A1 (de) * | 2018-12-17 | 2020-06-18 | Siltronic Ag | Verfahren zur Herstellung von Halbleiterscheiben mittels einer Drahtsäge, Drahtsäge und Halbleiterscheibe aus einkristallinem Silizium |
CN110193776B (zh) * | 2019-06-11 | 2020-07-03 | 英特尔半导体(大连)有限公司 | 晶圆抛光的抛光压力控制方法、装置和设备 |
JP7143831B2 (ja) * | 2019-10-11 | 2022-09-29 | 信越半導体株式会社 | ウェーハ形状の測定方法 |
CN111496665A (zh) * | 2020-04-24 | 2020-08-07 | 华海清科股份有限公司 | 一种化学机械抛光控制方法及控制系统 |
JP6844733B1 (ja) | 2020-05-21 | 2021-03-17 | 信越半導体株式会社 | 基板ウェーハの製造方法、及び基板ウェーハ |
JP7290140B2 (ja) * | 2020-09-09 | 2023-06-13 | 株式会社Sumco | ウェーハ研磨方法およびウェーハ研磨装置 |
CN115122230A (zh) * | 2021-03-11 | 2022-09-30 | 中国科学院微电子研究所 | 抛光头、抛光装置和抛光方法 |
CN115401587B (zh) * | 2022-09-28 | 2023-06-27 | 浙江芯晖装备技术有限公司 | 一种抛光头及半导体晶圆平坦化设备 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6231428B1 (en) | 1999-03-03 | 2001-05-15 | Mitsubishi Materials Corporation | Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring |
US7131891B2 (en) | 2003-04-28 | 2006-11-07 | Micron Technology, Inc. | Systems and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces |
JP4764693B2 (ja) | 2005-09-29 | 2011-09-07 | 信越半導体株式会社 | 半導体ウェーハの製造方法及び両頭研削装置 |
US20070167110A1 (en) | 2006-01-16 | 2007-07-19 | Yu-Hsiang Tseng | Multi-zone carrier head for chemical mechanical polishing and cmp method thereof |
US7930058B2 (en) * | 2006-01-30 | 2011-04-19 | Memc Electronic Materials, Inc. | Nanotopography control and optimization using feedback from warp data |
US7503833B2 (en) * | 2006-02-16 | 2009-03-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Three-dimensional network for chemical mechanical polishing |
US20100330890A1 (en) | 2009-06-30 | 2010-12-30 | Zine-Eddine Boutaghou | Polishing pad with array of fluidized gimballed abrasive members |
DE102009051007B4 (de) * | 2009-10-28 | 2011-12-22 | Siltronic Ag | Verfahren zum Polieren einer Halbleiterscheibe |
US8712575B2 (en) * | 2010-03-26 | 2014-04-29 | Memc Electronic Materials, Inc. | Hydrostatic pad pressure modulation in a simultaneous double side wafer grinder |
JP2012235072A (ja) * | 2011-05-09 | 2012-11-29 | Sumco Corp | ウェーハ表面処理方法 |
WO2014149330A1 (en) * | 2013-03-15 | 2014-09-25 | Applied Materials, Inc. | Dynamic residue clearing control with in-situ profile control (ispc) |
-
2015
- 2015-11-26 JP JP2015230350A patent/JP6447472B2/ja active Active
-
2016
- 2016-10-21 TW TW105134002A patent/TWI680507B/zh active
- 2016-11-04 US US15/776,266 patent/US11075085B2/en active Active
- 2016-11-04 DE DE112016005417.3T patent/DE112016005417B4/de active Active
- 2016-11-04 KR KR1020187013751A patent/KR102047814B1/ko active IP Right Grant
- 2016-11-04 WO PCT/JP2016/082763 patent/WO2017090406A1/ja active Application Filing
- 2016-11-04 CN CN201680066639.7A patent/CN108475627B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
WO2017090406A1 (ja) | 2017-06-01 |
KR102047814B1 (ko) | 2019-11-22 |
CN108475627B (zh) | 2022-11-08 |
KR20180067657A (ko) | 2018-06-20 |
DE112016005417B4 (de) | 2023-11-23 |
US20190333775A1 (en) | 2019-10-31 |
TWI680507B (zh) | 2019-12-21 |
JP2017098446A (ja) | 2017-06-01 |
TW201730949A (zh) | 2017-09-01 |
CN108475627A (zh) | 2018-08-31 |
DE112016005417T5 (de) | 2018-08-02 |
US11075085B2 (en) | 2021-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6447472B2 (ja) | ウェーハ研磨方法 | |
JP5322856B2 (ja) | 半導体ウェーハを研磨する方法 | |
KR100818683B1 (ko) | 경면 면취 웨이퍼, 경면 면취용 연마 클로스 및 경면 면취연마장치 및 방법 | |
TWI471911B (zh) | 製造磊晶晶圓的方法以及磊晶晶圓 | |
US8772177B2 (en) | Semiconductor wafer and method of producing the same | |
CN110193776B (zh) | 晶圆抛光的抛光压力控制方法、装置和设备 | |
US9748089B2 (en) | Method for producing mirror-polished wafer | |
US20140264765A1 (en) | Semiconductor wafer and method of producing same | |
US11456168B2 (en) | Method of lapping semiconductor wafer and semiconductor wafer | |
KR20190088414A (ko) | 캐리어의 제조방법 및 웨이퍼의 양면 연마방법 | |
US11389922B2 (en) | Polishing measurement device and abrasion time controlling method thereof, and polishing control system including same | |
JP2002100594A (ja) | 平面研磨方法および装置 | |
KR102299152B1 (ko) | 연마방법 | |
JP2009027095A (ja) | 半導体ウェハの評価方法、半導体ウェハの研削方法、及び半導体ウェハの加工方法 | |
KR102477930B1 (ko) | 웨이퍼의 양면연마방법 및 양면연마장치 | |
KR20220082036A (ko) | 웨이퍼의 연마 방법 및 실리콘 웨이퍼 | |
KR20090108263A (ko) | 양면 연마 공정에서 웨이퍼의 평탄도를 제어하는 방법 | |
JP2002166357A (ja) | ウェーハ研磨加工方法 | |
JP2024024161A (ja) | ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置 | |
JP2018008342A (ja) | 両面研磨装置 | |
KR101621165B1 (ko) | 화학 기계식 연마용 가요성 박막 | |
JP2024024162A (ja) | ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180116 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181009 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181016 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20181106 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20181119 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6447472 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |