JP2011507234A - 改善されたｌｅｄ構造 - Google Patents

改善されたｌｅｄ構造 Download PDF

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Publication number
JP2011507234A
JP2011507234A JP2010536956A JP2010536956A JP2011507234A JP 2011507234 A JP2011507234 A JP 2011507234A JP 2010536956 A JP2010536956 A JP 2010536956A JP 2010536956 A JP2010536956 A JP 2010536956A JP 2011507234 A JP2011507234 A JP 2011507234A
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Japan
Prior art keywords
layer
dielectric
mirror
electrically conductive
light
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JP2010536956A
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Japanese (ja)
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JP2011507234A5 (https=
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ハスナイン、グーラム
レスター、スティーブン・ディー
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ブリッジラックス・インク
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Publication of JP2011507234A publication Critical patent/JP2011507234A/ja
Publication of JP2011507234A5 publication Critical patent/JP2011507234A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
JP2010536956A 2007-12-06 2008-11-04 改善されたｌｅｄ構造 Withdrawn JP2011507234A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/952,048 US8026527B2 (en) 2007-12-06 2007-12-06 LED structure
PCT/US2008/082355 WO2009075968A2 (en) 2007-12-06 2008-11-04 Improved led structure

Publications (2)

Publication Number Publication Date
JP2011507234A true JP2011507234A (ja) 2011-03-03
JP2011507234A5 JP2011507234A5 (https=) 2011-04-14

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Family Applications (1)

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JP2010536956A Withdrawn JP2011507234A (ja) 2007-12-06 2008-11-04 改善されたｌｅｄ構造

Country Status (7)

Country Link
US (2) US8026527B2 (https=)
EP (1) EP2225780A2 (https=)
JP (1) JP2011507234A (https=)
KR (1) KR101552366B1 (https=)
CN (1) CN101868866A (https=)
TW (1) TW200926461A (https=)
WO (1) WO2009075968A2 (https=)

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JP2012031318A (ja) * 2010-07-30 2012-02-16 Bridgestone Corp 共役ジエン化合物と非共役オレフィンとの共重合体
JP2012031317A (ja) * 2010-07-30 2012-02-16 Bridgestone Corp 共役ジエン化合物と非共役オレフィンとの共重合体
JP2012212846A (ja) * 2011-03-21 2012-11-01 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
KR20150090231A (ko) * 2012-12-07 2015-08-05 마이크론 테크놀로지, 인크 매립 콘택트를 갖는 수직 솔리드-스테이트 트랜스듀서 및 고전압 솔리드-스테이트 트랜스듀서 및 연관된 시스템 및 방법
KR20160068715A (ko) * 2011-03-22 2016-06-15 서울바이오시스 주식회사 발광 다이오드 패키지 및 그의 제조 방법
JP2019511844A (ja) * 2016-04-13 2019-04-25 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体チップ

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KR100891761B1 (ko) * 2007-10-19 2009-04-07 삼성전기주식회사 반도체 발광소자, 그의 제조방법 및 이를 이용한 반도체발광소자 패키지
DE102008024517A1 (de) * 2007-12-27 2009-07-02 Osram Opto Semiconductors Gmbh Strahlungsemittierender Körper und Verfahren zur Herstellung eines strahlungsemittierenden Körpers
DE102008051048A1 (de) * 2008-10-09 2010-04-15 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper
KR100992749B1 (ko) * 2009-02-16 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
KR101014136B1 (ko) * 2009-02-17 2011-02-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
DE102009019161A1 (de) * 2009-04-28 2010-11-04 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
CN105226151A (zh) * 2009-08-25 2016-01-06 元芯光电股份有限公司 发光二极管装置及其形成方法
KR101072193B1 (ko) * 2010-04-01 2011-10-10 엘지이노텍 주식회사 발광소자, 발광소자 제조방법, 및 발광소자 패키지
JP5414627B2 (ja) * 2010-06-07 2014-02-12 株式会社東芝 半導体発光装置及びその製造方法
KR101252032B1 (ko) * 2010-07-08 2013-04-10 삼성전자주식회사 반도체 발광소자 및 이의 제조방법
KR101735670B1 (ko) * 2010-07-13 2017-05-15 엘지이노텍 주식회사 발광 소자
US8217488B2 (en) * 2010-07-19 2012-07-10 Walsin Lihwa Corporation GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
TWI446578B (zh) 2010-09-23 2014-07-21 Epistar Corp 發光元件及其製法
KR101103639B1 (ko) * 2010-12-06 2012-01-11 광주과학기술원 분산브라그반사소자를 이용한 자외선 발광다이오드 및 그 제조방법
JP2012124306A (ja) * 2010-12-08 2012-06-28 Toyoda Gosei Co Ltd 半導体発光素子
KR101762324B1 (ko) * 2011-01-27 2017-07-27 엘지이노텍 주식회사 발광 소자
JP5806608B2 (ja) * 2011-12-12 2015-11-10 株式会社東芝 半導体発光装置
US9419182B2 (en) * 2012-01-05 2016-08-16 Micron Technology, Inc. Solid-state radiation transducer devices having at least partially transparent buried-contact elements, and associated systems and methods
US9496458B2 (en) * 2012-06-08 2016-11-15 Cree, Inc. Semiconductor light emitting diodes with crack-tolerant barrier structures and methods of fabricating the same
CN103915530A (zh) * 2013-01-05 2014-07-09 海立尔股份有限公司 高压覆晶led结构及其制造方法
DE102013100470A1 (de) * 2013-01-17 2014-07-17 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102013103216A1 (de) * 2013-03-28 2014-10-02 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip
DE102013105227A1 (de) * 2013-05-22 2014-11-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterchips
CN104993031B (zh) * 2015-06-12 2018-03-06 映瑞光电科技(上海)有限公司 高压倒装led芯片及其制造方法
US10991861B2 (en) 2015-10-01 2021-04-27 Cree, Inc. Low optical loss flip chip solid state lighting device
DE102016100317A1 (de) * 2016-01-11 2017-07-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
US11923481B2 (en) 2018-01-29 2024-03-05 Creeled, Inc. Reflective layers for light-emitting diodes
US11031527B2 (en) 2018-01-29 2021-06-08 Creeled, Inc. Reflective layers for light-emitting diodes
US11387389B2 (en) 2018-01-29 2022-07-12 Creeled, Inc. Reflective layers for light-emitting diodes
CN117766662A (zh) * 2018-11-13 2024-03-26 泉州三安半导体科技有限公司 发光二极管
US10879441B2 (en) 2018-12-17 2020-12-29 Cree, Inc. Interconnects for light emitting diode chips
DE112020001165B4 (de) * 2019-03-12 2024-02-22 Sony Group Corporation Lichtemittierendes element und verfahren zur herstellung desselben
US10985294B2 (en) 2019-03-19 2021-04-20 Creeled, Inc. Contact structures for light emitting diode chips
US11094848B2 (en) 2019-08-16 2021-08-17 Creeled, Inc. Light-emitting diode chip structures
JP2022044493A (ja) * 2020-09-07 2022-03-17 日亜化学工業株式会社 発光素子
US11322649B2 (en) * 2020-09-15 2022-05-03 Applied Materials, Inc. Three color light sources integrated on a single wafer
US20250393347A1 (en) * 2024-06-25 2025-12-25 Lumileds Llc Chip-scale package led with dual composite reflectors

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JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
TWI220578B (en) * 2003-09-16 2004-08-21 Opto Tech Corp Light-emitting device capable of increasing light-emitting active region
WO2005050748A1 (ja) * 2003-11-19 2005-06-02 Nichia Corporation 半導体素子及びその製造方法
TWI224877B (en) 2003-12-25 2004-12-01 Super Nova Optoelectronics Cor Gallium nitride series light-emitting diode structure and its manufacturing method
JP4330476B2 (ja) * 2004-03-29 2009-09-16 スタンレー電気株式会社 半導体発光素子
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JP2012031317A (ja) * 2010-07-30 2012-02-16 Bridgestone Corp 共役ジエン化合物と非共役オレフィンとの共重合体
JP2012031318A (ja) * 2010-07-30 2012-02-16 Bridgestone Corp 共役ジエン化合物と非共役オレフィンとの共重合体
JP2012212846A (ja) * 2011-03-21 2012-11-01 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
KR20160068715A (ko) * 2011-03-22 2016-06-15 서울바이오시스 주식회사 발광 다이오드 패키지 및 그의 제조 방법
KR101894045B1 (ko) * 2011-03-22 2018-09-04 서울바이오시스 주식회사 발광 다이오드 패키지 및 그의 제조 방법
JP2016503232A (ja) * 2012-12-07 2016-02-01 マイクロン テクノロジー， インク． 垂直ソリッドステート変換器および埋め込み接点を有する高電圧ソリッドステート変換器ならびに関連システムおよび方法
KR101709878B1 (ko) 2012-12-07 2017-02-23 마이크론 테크놀로지, 인크 매립 콘택트를 갖는 수직 솔리드-스테이트 트랜스듀서 및 고전압 솔리드-스테이트 트랜스듀서 및 연관된 시스템 및 방법
US9728696B2 (en) 2012-12-07 2017-08-08 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
KR20150090231A (ko) * 2012-12-07 2015-08-05 마이크론 테크놀로지, 인크 매립 콘택트를 갖는 수직 솔리드-스테이트 트랜스듀서 및 고전압 솔리드-스테이트 트랜스듀서 및 연관된 시스템 및 방법
US10134969B2 (en) 2012-12-07 2018-11-20 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
US10475976B2 (en) 2012-12-07 2019-11-12 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
US10879444B2 (en) 2012-12-07 2020-12-29 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
US11563158B2 (en) 2012-12-07 2023-01-24 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
US11843087B2 (en) 2012-12-07 2023-12-12 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
US12279468B2 (en) 2012-12-07 2025-04-15 Micron Technology, Inc. Vertical solid-state transducers and high voltage solid-state transducers having buried contacts and associated systems and methods
JP2019511844A (ja) * 2016-04-13 2019-04-25 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングＯｓｒａｍ Ｏｐｔｏ Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ ＧｍｂＨ オプトエレクトロニクス半導体チップ

Also Published As

Publication number Publication date
CN101868866A (zh) 2010-10-20
KR101552366B1 (ko) 2015-09-10
US8338848B2 (en) 2012-12-25
TW200926461A (en) 2009-06-16
WO2009075968A2 (en) 2009-06-18
US20110303942A1 (en) 2011-12-15
KR20100091207A (ko) 2010-08-18
US8026527B2 (en) 2011-09-27
EP2225780A2 (en) 2010-09-08
WO2009075968A3 (en) 2009-08-27
US20090146165A1 (en) 2009-06-11

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