JP2016503232A - 垂直ソリッドステート変換器および埋め込み接点を有する高電圧ソリッドステート変換器ならびに関連システムおよび方法 - Google Patents
垂直ソリッドステート変換器および埋め込み接点を有する高電圧ソリッドステート変換器ならびに関連システムおよび方法 Download PDFInfo
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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Abstract
Description
Claims (38)
- ソリッドステート変換器(SST)ダイであって、
第一側面と、前記第一側面とは反対側の第二側面と、前記第一側面における第一の半導体材料と、前記第二側面における第二の半導体材料と、を有する変換器構造と、
個々が前記第一の半導体材料に電気的に結合される、複数の第一接点と、
前記第二の半導体材料に電気的に結合され、前記変換器構造の前記第一側面から、前記第二の半導体材料へと伸びる、複数の第二接点と、
少なくとも一つの第一接点および一つの第二接点の間に形成される相互接続と、
を含む、
ことを特徴とするSSTダイ。 - 前記相互接続および前記第一の半導体材料および前記相互接続を被覆する複数のパッケージ材料の間に誘電性材料をさらに含む、
ことを特徴とする請求項1に記載のSSTダイ。 - 前記複数の第一接点および前記複数の第二接点は埋め込まれ、前記SSTダイは、第一の外部端子および第二の外部端子をさらに含み、前記第一および第二の外部端子は、電源に接続するように構成される、
ことを特徴とする請求項1に記載のSSTダイ。 - 前記変換器構造は、前記第一側面における前記複数の第一接点および前記複数の第二接点を有する垂直変換器構造であって、前記SSTダイは、外部コンポーネントに直接取り付けるように構成される、
ことを特徴とする請求項1に記載のSSTダイ。 - 前記変換器構造は、直列に結合された複数の高電圧変換器接合を含む、
ことを特徴とする請求項1に記載のSSTダイ。 - 前記第一側面に熱パッドをさらに含む、
ことを特徴とする請求項1に記載のSSTダイ。 - 前記SSTダイは、一つ以上の個々の第一接点および一つ以上の第二接点の間に複数の相互接続を含む、
ことを特徴とする請求項1に記載のSSTダイ。 - 複数の接合と、
前記相互接続に接続され、第二のダイ上の別の接点へと交差接続するように構成された第三接点と、
をさらに含む、
ことを特徴とする請求項1に記載のSSTダイ。 - 前記相互接続は、前記第一および第二の半導体材料から電気的に絶縁される、
ことを特徴とする請求項1に記載のSSTダイ。 - 前記変換器構造は、第一の変換器接合および第二の変換器接合へと前記変換器構造を分離する複数のフィーチャを有し、前記第一の変換器接合は埋め込み第二接点を有し、前記第二の変換器接合は露出された第一接点を有し、前記相互接続は、前記第一の変換器接合上の前記埋め込み第二接点と、前記第二の変換器接合上の前記露出された第一接点との間に形成される、
ことを特徴とする請求項1に記載のSSTダイ。 - ソリッドステート変換器(SST)ウェーハであって、
第一側面における第一の半導体材料と、前記第一側面とは反対側の第二側面における第二の半導体材料と、前記第一の半導体材料および前記第二の半導体材料の間の発光活性領域と、を有する変換器構造と、
前記変換器構造を個々にアドレス指定可能な複数の発光ダイオード(LED)ダイへと分離する複数のフィーチャと、
を含み、
各LEDダイは、
前記第一側面における前記第一の半導体材料に結合された第一の電気端子と、
前記第一側面における前記第二の半導体材料に結合された第二の電気端子と、
前記第一の電気端子および前記第二の電気端子の間に直列に結合された複数の接合と、
複数の内部第一接点と、
複数の内部第二接点と、
一つ以上の内部第一接点および内部第二接点の間の複数の相互接続と、
前記第一側面上に配置された熱パッドと、
を含む、
ことを特徴とするSSTウェーハ。 - 前記相互接続に結合された第三接点をさらに含み、前記第三接点は、第二のダイ上の別の接点へと交差接続するように構成される、
ことを特徴とする請求項11に記載のSSTウェーハ。 - 前記複数の内部第一接点、前記複数の内部第二接点および前記複数の相互接続にわたる導電性材料をさらに含む、
ことを特徴とする請求項11に記載のSSTウェーハ。 - 前記導電性材料と前記複数の内部第一接点の間、前記複数の内部第二接点と前記複数の相互接続の間にバリア材料をさらに含む、
ことを特徴とする請求項13に記載のSSTウェーハ。 - ソリッドステート変換器(SST)ダイであって、
前記SSTダイの第一側面上の第一端子と、
前記SSTダイの前記第一側面上の第二端子と、
前記第一および第二の端子の間に直列に結合された複数のSST接合と、
各個々のSST接合が少なくとも一つの埋め込み第一接点を含む、複数の埋め込み第一接点と、
各個々のSST接合が少なくとも一つの埋め込み第二接点を含む、複数の埋め込み第二接点と、
各埋め込み相互接続は、少なくとも一つの埋め込み第二接点を、隣接する接合上の少なくとも一つの埋め込み第一接点へと結合する、各個々の接合間の複数の埋め込み相互接続と、
前記SSTダイの前記第一側面上の熱パッドと、
を含む、
ことを特徴とするSSTダイ。 - 前記複数の埋め込み第一接点および前記複数の埋め込み第二接点ならびに前記複数の埋め込み相互接続は、バリア材料および導電性金属下に埋め込まれる、
ことを特徴とする請求項15に記載のSSTダイ。 - 前記導電性金属は銅である、
ことを特徴とする請求項16に記載のSSTダイ。 - 前記第一端子および前記第二端子は、複数の誘電性経路によって電気的に絶縁される、
ことを特徴とする請求項15に記載のSSTダイ。 - 高電圧発光ダイオード(HVLED)を形成する方法であって、
第一側面と、前記第一側面と反対を向いた第二側面と、前記第一側面における第一の半導体材料と、前記第二側面における第二の半導体材料と、前記第一の半導体材料および前記第二の半導体材料の間の発光活性領域と、を有する発光変換器構造を形成することと、
前記変換器構造の前記第一側面における第一接点を形成することであって、前記第一接点は前記第一の半導体材料に電気的に結合される、ことと、
前記変換器構造および前記第一接点を複数の接合へと分離する複数のフィーチャを形成することと、
各個々の接合上に第二接点を形成することであって、前記第二接点は、前記第二の半導体材料に電気的に結合され、かつ前記変換器構造の前記第一側面から前記第二の半導体材料へと伸びる、ことと、
前記第一接点にわたってパシベーション材料を形成することと、
前記パシベーション材料を通って各個々の接合において、前記第一接点の少なくとも一部を露出することと、
前記第二接点および隣接する複数の接合上の前記露出された第一接点の間に複数の相互接続を形成することと、
を含み、
前記複数の接合は、前記複数の相互接続を介して電気的に直列に結合される、
ことを特徴とする方法。 - 前記変換器構造を分離する複数のフィーチャを形成することは、前記変換器構造における複数のメサをエッチングすることを含む、
ことを特徴とする請求項19に記載の方法。 - 前記複数の相互接続にわたる追加パシベーション部分を形成することをさらに含む、
ことを特徴とする請求項19に記載の方法。 - 前記パシベーション材料および前記追加パシベーション部分は誘電性材料を含む、
ことを特徴とする請求項19に記載の方法。 - 前記変換器構造の前記第一側面上にバリア材料を堆積することをさらに含む、
ことを特徴とする請求項21に記載の方法。 - 前記第一側面における前記バリア材料上にシード材料を堆積することと、前記パシベーション材料もしくは前記追加パシベーション部分のうちの一つ以上の部分を露出するために、前記シード材料および前記バリア材料をパターン化することと、をさらに含む、
ことを特徴とする請求項23に記載の方法。 - 前記パシベーション材料もしくは前記追加パシベーション部分のうちの一部を被覆することなく、前記シード材料上に金属基板を堆積することをさらに含む、
ことを特徴とする請求項24に記載の方法。 - 第一接点を形成することは、反射性p金属接点を形成することを含む、
ことを特徴とする請求項19に記載の方法。 - 直列に結合された複数の接合を有するソリッドステート変換器(SST)ダイを形成する方法であって、
基板と、前記基板上の変換器構造とを有するウェーハを提供することであって、前記変換器構造は第一側面における第一の半導体材料と、前記第一側面とは反対側の第二側面における第二の半導体材料と、前記複数の接合を有する複数の個々にアドレス指定可能なSSTダイへと前記変換器構造を分割する複数のトレンチと、を有する、ことと、
各個々の接合上に第一接点を形成することであって、前記第一接点は、前記第一の半導体材料に電気的に結合される、ことと、
各個々の接合上に前記第二の半導体材料に電気的に結合された第二接点を形成することであって、前記第二接点は、前記変換器構造の前記第一側面から前記第二の半導体材料へと伸びる、ことと、
第一および第二の接合が相互接続を介して電気的に直列に結合されるように、前記第一接合上の前記第二接点および前記第二接合上の前記第一接点の間に前記相互接続を形成することと、
複数のパッケージ材料で前記相互接続を被覆することと、
を含む、
ことを特徴とする方法。 - 複数のパッケージ材料で前記相互接続を被覆することは、
前記相互接続にわたって誘電性パッチを形成することと、
前記変換器構造の前記第一側面上にバリア材料を堆積することと、
前記第一側面における前記バリア材料上にシード材料を堆積することと、
前記シード材料上に金属基板を堆積することと、
を含む、
ことを特徴とする請求項27に記載の方法。 - 誘電性材料の第一部分および誘電性材料の第二部分を露出するために一つ以上のパッケージ材料をパターン化することであって、前記第二部分は、個々に各アドレス指定可能なSSTダイ上の前記第一部分から間隔を開けて配置される、ことと、
前記第一側面上に第一の外部端子および第二の外部端子を提供することであって、前記第一の外部端子は、前記第一部分によって前記SSTダイ上で電気的に絶縁され、前記第二外部端子は、前記第二部分によって前記SSTダイ上で電気的に絶縁される、ことと、
複数の被覆された相互接続を介して、前記第一および第二の端子の間で前記複数の接合を直列に結合することと、
をさらに含む、
ことを特徴とする請求項27に記載の方法。 - 前記第一の外部端子および前記第二の外部端子を外部コンポーネントに電気的に結合することをさらに含む、
ことを特徴とする請求項29に記載の方法。 - 個々にアドレス指定可能な各SSTダイの前記第一側面上に熱パッドを形成することをさらに含む、
ことを特徴とする請求項27に記載の方法。 - 前記相互接続に電気的に結合された第三の外部端子を提供することをさらに含み、前記第三の外部端子は、第二のダイ上の別の端子に交差接続するように構成される、
ことを特徴とする請求項27に記載の方法。 - 複数のダイシングレーンに沿って前記個々にアドレス指定可能なSSTダイをシンギュレーションすることをさらに含む、
ことを特徴とする請求項27に記載の方法。 - 高電力発光ダイオード(LED)であって、
第一側面における第一の半導体材料と前記第一側面と反対を向いた第二側面における第二の半導体材料との間に配置された発光活性領域を有する発光変換器構造と、
前記変換器構造の前記第一側面における前記第一の半導体材料に電気的に結合された第一接点と、
前記変換器構造および前記第一接点を複数の接合へと分離する複数のフィーチャであって、各接合は、前記第二の半導体材料に電気的に接続され、かつ前記変換器構造の前記第一側面から前記発光活性領域を通って前記第二の半導体材料へと伸びる第二接点を含む、複数のフィーチャと、
前記第二接点および隣接する複数の接合上の前記第一接点の間の複数の相互接続と、
を含み、
前記複数の接合は、前記複数の相互接続を介して電気的に直列に結合される、
ことを特徴とする高電力LED。 - 前記第一接点上にパシベーション材料をさらに含み、前記第一接点の一部は、前記変換器構造の前記第一側面におけるパシベーション層を通って露出される、
ことを特徴とする請求項34に記載の高電力LED。 - 前記変換器構造の前記第一側面における前記パシベーション層および前記複数の相互接続にわたって複数のパッケージ材料をさらに含む、
ことを特徴とする請求項34に記載の高電力LED。 - 前記複数のパッケージ材料は、誘電性材料、バリア材料、シード材料および金属基板のうちの一つ以上を含む、
ことを特徴とする請求項36に記載の高電力LED。 - 前記複数の接合のうちの各々は、前記第一側面における熱パッドを含む、
ことを特徴とする請求項34に記載の高電力LED。
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US10879444B2 (en) | 2020-12-29 |
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