JP2011243592A - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP2011243592A JP2011243592A JP2011195972A JP2011195972A JP2011243592A JP 2011243592 A JP2011243592 A JP 2011243592A JP 2011195972 A JP2011195972 A JP 2011195972A JP 2011195972 A JP2011195972 A JP 2011195972A JP 2011243592 A JP2011243592 A JP 2011243592A
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- film
- electrode
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims description 29
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 24
- 239000011229 interlayer Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 13
- 239000011787 zinc oxide Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 36
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract description 18
- 239000002253 acid Substances 0.000 abstract description 8
- 235000006408 oxalic acid Nutrition 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 267
- 239000010410 layer Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 27
- 239000003929 acidic solution Substances 0.000 description 26
- 239000004065 semiconductor Substances 0.000 description 26
- 238000004544 sputter deposition Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 17
- 238000005498 polishing Methods 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910006404 SnO 2 Inorganic materials 0.000 description 7
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000007517 polishing process Methods 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 4
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005984 hydrogenation reaction Methods 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000005247 gettering Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/816—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80517—Multilayers, e.g. transparent multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
を生じず、特に発光素子の電極として適した電極構造を有する表示装置を提供すること。
【解決手段】 本発明の表示装置は、透明導電膜が積層した積層構造の電極を有する表示
装置であり、前記電極は、弱酸性溶液を用いたエッチングにおいて残渣を生じない第1の
透明導電膜を最下層とし、仕事関数が5.0eV以上の第2の透明導電膜を最上層として
いることを特徴としている。
【選択図】 図1
Description
従って、弱酸性溶液を用いても残渣を生じることなくエッチングできる。
のいずれか一若しくは両方を含むインジウム錫酸化物(ITO)は、酸化珪素(SiO2)を1〜10wt%含有するインジウム錫酸化物をターゲットとしてスパッタ法により形成することができる。
の端子接続部が、低抵抗な導電膜と、弱酸性溶液を用いたエッチングにおいて残渣を生じないで第1の透明導電膜と、仕事関数が5.0eV以上の第2の透明導電膜との積層構造であることも特徴としている。
また、第2の透明導電膜13は、仕事関数の高い材料で形成されている。
次に、レジストマスク1510〜1513をマスクとして導電性膜1505をエッチングし、続いて導電性膜1504をエッチングして加工する。レジストマスク1510〜1513の側壁の傾斜角度(テーパー角度)に依存して、導電性膜1505は側壁に約26°のテーパー角度をもった導電性膜1506b、1507b、1508b、1509bに加工される。また、導電性膜1504も側壁に15〜45°のテーパー角度をもった導電性膜1506a、1507a、1508a、1509aに加工される。
、珪素を含有したアルミニウム(Al−Si)、チタン(Ti)を順に膜厚100nm、350nm、100nmの厚さで積層成膜した後、パターニング及びエッチングにより所望の形状に加工して、配線(又は電極)1535を形成する。
とを含有するターゲットを用い、50sccmのアルゴン(Ar)ガス、0.5sccmの酸素(O2)ガス、及び0.5sccmの水(H2O)を流してスパッタ法により、ITOを膜厚20nmの厚さで成膜して、第2の透明導電膜1537とする。なお、上記のような条件で成膜した透明導電膜を、X線光電子分析装置(ESCA/XPS)を用いて分析したとき、酸素(O):インジウム(In):錫(Sn)の組成(atomic%)は、62:36:2であった。
これにより、第2の透明導電膜1537の仕事関数は約5.3eVと高くなる(なお、酸素プラズマ処理前は約4.8eVであった)。
Claims (7)
- トランジスタと、
前記トランジスタ上の層間絶縁膜と、
前記トランジスタの一方の高濃度不純物領域と電気的に接続する前記層間絶縁膜上の第1の電極と、
前記第1の電極と電気的に接続する前記層間絶縁膜上の第2の電極と、
前記トランジスタの他方の高濃度不純物領域と電気的に接続する前記層間絶縁膜上の第3の電極と、
前記第3の電極と電気的に接続する前記層間絶縁膜上の第4の電極と、を有し、
前記第2の電極及び前記第4の電極は、
酸化珪素もしくは珪素を含むインジウム錫酸化物、酸化亜鉛、またはガリウムを含む酸化亜鉛で成る第1の透明導電膜と、
前記第1の透明導電膜上に形成され、インジウム錫酸化物または酸化錫で成る第2の透明導電膜と、を有し、
前記第1の電極及び前記第3の電極は、アルミニウム又は銅を用いて形成され、
前記第1の電極は、前記第2の電極に上面及び側面を完全に覆われ、
前記第3の電極は、前記第4の電極に上面及び側面を完全に覆われていることを特徴とする表示装置。 - 基板上に複数のトランジスタと、
前記複数のトランジスタ上の層間絶縁膜と、
前記複数のトランジスタのそれぞれと電気的に接続する前記層間絶縁膜上の複数の第1の電極と、
前記複数の第1の電極のそれぞれと電気的に接続する前記層間絶縁膜上の複数の第2の電極を有し、
前記複数の第2の電極は、
酸化珪素もしくは珪素を含むインジウム錫酸化物、酸化亜鉛、またはガリウムを含む酸化亜鉛で成る第1の透明導電膜と、
前記第1の透明導電膜上に形成され、インジウム錫酸化物または酸化錫で成る第2の透明導電膜と、を有し、
前記複数の第1の電極は、アルミニウム又は銅を用いて形成され、
前記基板上のすべての前記第1の電極は、それぞれ前記第2の電極に上面及び側面を完全に覆われていることを特徴とする表示装置。 - 請求項1または2において、前記第2の透明導電膜は、仕事関数が5.0eV以上であることを特徴とする表示装置。
- 請求項1乃至請求項3のいずれか一項において、前記第1の透明導電膜は非晶質であり、前記第2の透明導電膜は、結晶性を有することを特徴とする表示装置。
- 請求項1乃至請求項4のいずれか一項において、前記第1の透明導電膜の膜厚は80〜120nmであり、前記第2の透明導電膜の膜厚は30nm以下であることを特徴とする表示装置。
- 請求項1乃至請求項5のいずれか一項において、フレキシブルプリント基板と電気的に接続される端子接続部を有し、前記端子接続部は、比抵抗が3μΩ以下の導電膜と、前記第1の透明導電膜と前記第2の透明導電膜とを順に積層した積層構造であることを特徴とする表示装置。
- 請求項1乃至請求項6のいずれか一項において、前記層間絶縁膜は、前記第1の透明導電膜と接する窒化珪素膜を有することを特徴とする表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011195972A JP5079130B2 (ja) | 2003-03-25 | 2011-09-08 | 表示装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003083120 | 2003-03-25 | ||
JP2003083120 | 2003-03-25 | ||
JP2011195972A JP5079130B2 (ja) | 2003-03-25 | 2011-09-08 | 表示装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004072314A Division JP4850393B2 (ja) | 2003-03-25 | 2004-03-15 | 表示装置の作製方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011243592A true JP2011243592A (ja) | 2011-12-01 |
JP5079130B2 JP5079130B2 (ja) | 2012-11-21 |
Family
ID=33447020
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011195972A Expired - Fee Related JP5079130B2 (ja) | 2003-03-25 | 2011-09-08 | 表示装置 |
Country Status (2)
Country | Link |
---|---|
US (3) | US7057208B2 (ja) |
JP (1) | JP5079130B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017045634A (ja) * | 2015-08-27 | 2017-03-02 | 日本電気硝子株式会社 | 透明導電膜付き基板の製造方法及び透明導電膜付き基板 |
WO2022054761A1 (ja) * | 2020-09-08 | 2022-03-17 | ソニーセミコンダクタソリューションズ株式会社 | 表示装置、発光装置および電子機器 |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7316784B2 (en) * | 2003-02-10 | 2008-01-08 | Lg.Philips Lcd Co., Ltd. | Method of patterning transparent conductive film, thin film transistor substrate using the same and fabricating method thereof |
US7291967B2 (en) * | 2003-08-29 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element including a barrier layer and a manufacturing method thereof |
KR100546668B1 (ko) * | 2003-09-08 | 2006-01-26 | 엘지전자 주식회사 | 유기 el 디스플레이 패널 제조 방법 |
US7492090B2 (en) * | 2003-09-19 | 2009-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
US7205716B2 (en) | 2003-10-20 | 2007-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US7902747B2 (en) | 2003-10-21 | 2011-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide |
US7825021B2 (en) * | 2004-01-16 | 2010-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device |
KR100579192B1 (ko) * | 2004-03-11 | 2006-05-11 | 삼성에스디아이 주식회사 | 전면 발광 구조를 갖는 유기 전계 발광 표시 장치 및 이의제조방법 |
KR100663624B1 (ko) * | 2004-04-29 | 2007-01-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 제조방법 |
US7642711B2 (en) * | 2004-07-06 | 2010-01-05 | Fujifilm Corporation | Functional layer having wiring connected to electrode and barrier metal between electrode and wiring |
US7554260B2 (en) | 2004-07-09 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device provided with a conductive film connection between a wiring component and a metal electrode film |
CN102544027B (zh) * | 2004-09-15 | 2016-02-17 | 株式会社半导体能源研究所 | 半导体器件 |
US20060091397A1 (en) * | 2004-11-04 | 2006-05-04 | Kengo Akimoto | Display device and method for manufacturing the same |
JP4555727B2 (ja) * | 2005-04-22 | 2010-10-06 | 株式会社 日立ディスプレイズ | 有機発光表示装置 |
EP1897151A4 (en) * | 2005-06-22 | 2010-03-10 | Seoul Opto Device Co Ltd | ILLUMINATING ELEMENT AND METHOD FOR THE PRODUCTION THEREOF |
WO2007077715A1 (ja) | 2006-01-05 | 2007-07-12 | Konica Minolta Holdings, Inc. | ボトムエミッション型有機エレクトロルミネッセンスパネル |
KR100810640B1 (ko) * | 2007-03-07 | 2008-03-06 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 |
CN101953231B (zh) * | 2008-02-15 | 2014-09-03 | 昭和电工株式会社 | 电极的表面处理方法和电极、以及有机电致发光元件的制造方法 |
JP5244439B2 (ja) * | 2008-04-08 | 2013-07-24 | 三菱電機株式会社 | 透明導電膜、表示装置、及びこれらの製造方法 |
WO2010032443A1 (ja) * | 2008-09-19 | 2010-03-25 | パナソニック株式会社 | 有機エレクトロルミネッセンス素子及びその製造方法 |
US8143125B2 (en) * | 2009-03-27 | 2012-03-27 | Fairchild Semiconductor Corporation | Structure and method for forming a salicide on the gate electrode of a trench-gate FET |
KR101812467B1 (ko) * | 2010-03-08 | 2017-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP5381853B2 (ja) * | 2010-03-26 | 2014-01-08 | 豊田合成株式会社 | 半導体発光素子 |
JP5437895B2 (ja) * | 2010-04-20 | 2014-03-12 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
KR101273239B1 (ko) * | 2010-09-20 | 2013-06-11 | 엘지디스플레이 주식회사 | 터치 스크린이 내장된 액정 표시장치와 이의 제조방법 |
KR101284709B1 (ko) * | 2010-09-20 | 2013-07-16 | 엘지디스플레이 주식회사 | 액정 표시장치와 이의 제조방법 |
KR101753802B1 (ko) * | 2010-09-20 | 2017-07-04 | 엘지디스플레이 주식회사 | 터치 스크린이 내장된 액정 표시장치와 이의 제조방법 |
CN102549636B (zh) | 2010-09-21 | 2016-08-03 | 株式会社日本有机雷特显示器 | 薄膜晶体管阵列装置、薄膜晶体管阵列装置的制造方法 |
KR101685716B1 (ko) | 2010-09-21 | 2016-12-12 | 가부시키가이샤 제이올레드 | 박막 트랜지스터 어레이 장치, 박막 트랜지스터 어레이 장치의 제조 방법 |
US8658444B2 (en) * | 2012-05-16 | 2014-02-25 | International Business Machines Corporation | Semiconductor active matrix on buried insulator |
KR101960387B1 (ko) * | 2012-12-21 | 2019-03-20 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그의 제조방법 |
KR102078356B1 (ko) * | 2013-05-16 | 2020-04-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
KR102449804B1 (ko) * | 2015-03-02 | 2022-10-04 | 삼성디스플레이 주식회사 | 투명 유기 발광 표시 장치 및 이의 제조 방법 |
JP6627828B2 (ja) * | 2017-07-19 | 2020-01-08 | 日亜化学工業株式会社 | 薄膜の製造方法、薄膜形成材料、光学薄膜、及び光学部材 |
JP7458164B2 (ja) * | 2019-10-23 | 2024-03-29 | 株式会社ジャパンディスプレイ | 半導体装置 |
WO2021189329A1 (zh) * | 2020-03-25 | 2021-09-30 | 京东方科技集团股份有限公司 | 显示基板和显示装置 |
KR20210149957A (ko) * | 2020-06-02 | 2021-12-10 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
CN113437236B (zh) * | 2021-06-23 | 2023-09-01 | 合肥鑫晟光电科技有限公司 | 显示面板及其制备方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6410507A (en) * | 1987-07-02 | 1989-01-13 | Optrex Kk | Transparent conductive film and its manufacture |
JPH08180748A (ja) * | 1994-12-21 | 1996-07-12 | Sumitomo Bakelite Co Ltd | 透明電極 |
JPH09185062A (ja) * | 1995-12-27 | 1997-07-15 | Canon Inc | 表示素子 |
JP2000108244A (ja) * | 1998-10-05 | 2000-04-18 | Asahi Glass Co Ltd | 透明導電膜とその製造方法および透明導電膜付き基体 |
JP2001319789A (ja) * | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
JP2001319777A (ja) * | 2000-02-10 | 2001-11-16 | Matsushita Electric Works Ltd | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP2002124680A (ja) * | 2000-10-16 | 2002-04-26 | Toshiba Corp | アレイ基板及びその製造方法 |
JP2002151276A (ja) * | 2000-08-10 | 2002-05-24 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子機器 |
JP2003068457A (ja) * | 2001-08-29 | 2003-03-07 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5640067A (en) | 1995-03-24 | 1997-06-17 | Tdk Corporation | Thin film transistor, organic electroluminescence display device and manufacturing method of the same |
EP0782039A3 (en) | 1995-12-27 | 1998-06-17 | Canon Kabushiki Kaisha | Display device and process for producing same |
JP3641342B2 (ja) | 1997-03-07 | 2005-04-20 | Tdk株式会社 | 半導体装置及び有機elディスプレイ装置 |
JPH1131590A (ja) * | 1997-07-09 | 1999-02-02 | Tdk Corp | 有機el素子 |
GB9718516D0 (en) * | 1997-09-01 | 1997-11-05 | Cambridge Display Tech Ltd | Methods of Increasing the Efficiency of Organic Electroluminescent Devices |
KR100473453B1 (ko) | 1998-03-12 | 2005-03-07 | 세이코 엡슨 가부시키가이샤 | 액티브 매트릭스형 발광장치 및 그 제조방법 |
JP2000100575A (ja) | 1998-07-24 | 2000-04-07 | Tdk Corp | 有機el素子 |
CN100382354C (zh) | 1999-02-15 | 2008-04-16 | 出光兴产株式会社 | 有机场致发光元件及其制造方法 |
JP2000260571A (ja) | 1999-03-11 | 2000-09-22 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置 |
TWI255957B (en) * | 1999-03-26 | 2006-06-01 | Hitachi Ltd | Liquid crystal display device and method of manufacturing the same |
JP2001148291A (ja) | 1999-11-19 | 2001-05-29 | Sony Corp | 表示装置及びその製造方法 |
JP4727029B2 (ja) | 1999-11-29 | 2011-07-20 | 株式会社半導体エネルギー研究所 | El表示装置、電気器具及びel表示装置用の半導体素子基板 |
US6882102B2 (en) | 2000-02-29 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
JP2001331124A (ja) | 2000-05-22 | 2001-11-30 | Toshiba Corp | マトリクスアレイ基板 |
US6825820B2 (en) | 2000-08-10 | 2004-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
TW525402B (en) * | 2001-01-18 | 2003-03-21 | Semiconductor Energy Lab | Process for producing a light emitting device |
US7301279B2 (en) | 2001-03-19 | 2007-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting apparatus and method of manufacturing the same |
JP4026343B2 (ja) | 2001-10-02 | 2007-12-26 | ソニー株式会社 | 有機エレクトロルミネッセンス素子の製造方法 |
US7071613B2 (en) * | 2001-10-10 | 2006-07-04 | Lg.Philips Lcd Co., Ltd. | Organic electroluminescent device |
KR100796489B1 (ko) * | 2001-12-28 | 2008-01-21 | 엘지.필립스 엘시디 주식회사 | 터치패널장치 및 그의 제조방법 |
JP3730573B2 (ja) * | 2002-01-16 | 2006-01-05 | シャープ株式会社 | 露光装置および画像形成装置 |
-
2004
- 2004-03-17 US US10/802,040 patent/US7057208B2/en not_active Expired - Lifetime
-
2006
- 2006-05-18 US US11/436,131 patent/US8054397B2/en not_active Expired - Fee Related
-
2011
- 2011-09-08 JP JP2011195972A patent/JP5079130B2/ja not_active Expired - Fee Related
- 2011-11-03 US US13/288,099 patent/US8432505B2/en not_active Expired - Fee Related
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6410507A (en) * | 1987-07-02 | 1989-01-13 | Optrex Kk | Transparent conductive film and its manufacture |
JPH08180748A (ja) * | 1994-12-21 | 1996-07-12 | Sumitomo Bakelite Co Ltd | 透明電極 |
JPH09185062A (ja) * | 1995-12-27 | 1997-07-15 | Canon Inc | 表示素子 |
JP2000108244A (ja) * | 1998-10-05 | 2000-04-18 | Asahi Glass Co Ltd | 透明導電膜とその製造方法および透明導電膜付き基体 |
JP2001319777A (ja) * | 2000-02-10 | 2001-11-16 | Matsushita Electric Works Ltd | 有機エレクトロルミネッセンス素子及びその製造方法 |
JP2001319789A (ja) * | 2000-02-29 | 2001-11-16 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
JP2002151276A (ja) * | 2000-08-10 | 2002-05-24 | Semiconductor Energy Lab Co Ltd | 表示装置及び電子機器 |
JP2002124680A (ja) * | 2000-10-16 | 2002-04-26 | Toshiba Corp | アレイ基板及びその製造方法 |
JP2003068457A (ja) * | 2001-08-29 | 2003-03-07 | Semiconductor Energy Lab Co Ltd | 発光装置及びその作製方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017045634A (ja) * | 2015-08-27 | 2017-03-02 | 日本電気硝子株式会社 | 透明導電膜付き基板の製造方法及び透明導電膜付き基板 |
WO2022054761A1 (ja) * | 2020-09-08 | 2022-03-17 | ソニーセミコンダクタソリューションズ株式会社 | 表示装置、発光装置および電子機器 |
Also Published As
Publication number | Publication date |
---|---|
US20060214168A1 (en) | 2006-09-28 |
US8054397B2 (en) | 2011-11-08 |
US20040241931A1 (en) | 2004-12-02 |
US8432505B2 (en) | 2013-04-30 |
US7057208B2 (en) | 2006-06-06 |
US20120045959A1 (en) | 2012-02-23 |
JP5079130B2 (ja) | 2012-11-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5079130B2 (ja) | 表示装置 | |
JP4850393B2 (ja) | 表示装置の作製方法 | |
US7614929B2 (en) | Lighting emitting device and method of fabricating the same | |
US7579270B2 (en) | Method for manufacturing a semiconductor device | |
US7491562B2 (en) | Light emitting device and manufacturing method thereof | |
US8604688B2 (en) | Organic light-emitting display device and method of fabricating the same | |
TWI415265B (zh) | 薄膜電晶體及其製造方法 | |
JP4993938B2 (ja) | 半導体装置の作製方法 | |
JP2008140984A (ja) | 半導体素子、半導体素子の製造方法、及び表示装置 | |
JP5504221B2 (ja) | 発光装置及びその作製方法 | |
JP4754795B2 (ja) | 表示装置及び表示装置の作製方法 | |
EP1863094A2 (en) | Light emitting device, electronic apparatus with the light emitting device, and manufacturing method of light emitting device | |
JP4583797B2 (ja) | 半導体装置の作製方法 | |
JP4338997B2 (ja) | 表示装置の作製方法 | |
JP4963156B2 (ja) | 半導体装置の作製方法 | |
JP4823543B2 (ja) | 半導体装置の作製方法 | |
JP2010278165A (ja) | 薄膜トランジスタ及びその製造方法 | |
KR20110075518A (ko) | 어레이 기판의 제조방법 | |
JP4267253B2 (ja) | 半導体装置の作製方法 | |
JP5202673B2 (ja) | 半導体装置の作製方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110914 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120628 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120725 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120821 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120828 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150907 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5079130 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150907 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |