JP2011233891A5 - - Google Patents
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- Publication number
- JP2011233891A5 JP2011233891A5 JP2011095931A JP2011095931A JP2011233891A5 JP 2011233891 A5 JP2011233891 A5 JP 2011233891A5 JP 2011095931 A JP2011095931 A JP 2011095931A JP 2011095931 A JP2011095931 A JP 2011095931A JP 2011233891 A5 JP2011233891 A5 JP 2011233891A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- layer
- light
- light emitting
- refractive index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims 18
- 239000004065 semiconductor Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 3
- 238000005286 illumination Methods 0.000 claims 2
- 229910018229 Al—Ga Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- -1 fluoride series compound Chemical class 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0037946 | 2010-04-23 | ||
| KR1020100037946A KR101039948B1 (ko) | 2010-04-23 | 2010-04-23 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011233891A JP2011233891A (ja) | 2011-11-17 |
| JP2011233891A5 true JP2011233891A5 (enExample) | 2014-06-05 |
| JP5778466B2 JP5778466B2 (ja) | 2015-09-16 |
Family
ID=44305117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011095931A Active JP5778466B2 (ja) | 2010-04-23 | 2011-04-22 | 発光素子、発光素子パッケージ、及び照明システム |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8338847B2 (enExample) |
| EP (1) | EP2381492B1 (enExample) |
| JP (1) | JP5778466B2 (enExample) |
| KR (1) | KR101039948B1 (enExample) |
| CN (1) | CN102237458B (enExample) |
| TW (1) | TWI543401B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101967837B1 (ko) * | 2013-03-11 | 2019-04-10 | 삼성전자주식회사 | 반도체 발광 소자 |
| KR102527387B1 (ko) * | 2016-02-24 | 2023-04-28 | 삼성전자주식회사 | 발광 소자 패키지 및 그 제조 방법 |
| KR102555005B1 (ko) * | 2016-11-24 | 2023-07-14 | 삼성전자주식회사 | 반도체 발광 소자 및 반도체 발광 소자의 제조 방법 |
| CN109407407B (zh) * | 2018-12-21 | 2021-10-22 | 厦门天马微电子有限公司 | 显示装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09219562A (ja) * | 1996-02-09 | 1997-08-19 | Fujitsu Ltd | 半導体発光素子 |
| JP2001024282A (ja) * | 1999-07-09 | 2001-01-26 | Hitachi Ltd | Ｉｉｉ−ｖ族混晶半導体を用いた半導体装置の製造方法及び光通信システム |
| US20020047131A1 (en) * | 1999-12-22 | 2002-04-25 | Ludowise Michael J. | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
| JP2004119756A (ja) * | 2002-09-27 | 2004-04-15 | Fuji Photo Film Co Ltd | 発光ダイオード |
| US6900474B2 (en) * | 2002-12-20 | 2005-05-31 | Lumileds Lighting U.S., Llc | Light emitting devices with compact active regions |
| JP4330476B2 (ja) * | 2004-03-29 | 2009-09-16 | スタンレー電気株式会社 | 半導体発光素子 |
| DE102005016592A1 (de) * | 2004-04-14 | 2005-11-24 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
| JP2005317676A (ja) * | 2004-04-27 | 2005-11-10 | Sony Corp | 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法 |
| US7483466B2 (en) * | 2005-04-28 | 2009-01-27 | Canon Kabushiki Kaisha | Vertical cavity surface emitting laser device |
| JP4027392B2 (ja) * | 2005-04-28 | 2007-12-26 | キヤノン株式会社 | 垂直共振器型面発光レーザ装置 |
| KR100646636B1 (ko) | 2005-06-28 | 2006-11-23 | 서울옵토디바이스주식회사 | 발광 소자 및 이의 제조 방법 |
| US7781791B2 (en) | 2006-02-28 | 2010-08-24 | Rohm Co., Ltd. | Semiconductor light emitting element |
| KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
| CN101523603B (zh) * | 2006-08-06 | 2013-11-06 | 光波光电技术公司 | 具有一个或多个谐振反射器的ⅲ族氮化物发光器件以及用于该器件的反射工程化生长模板和方法 |
| JP2008135697A (ja) * | 2006-10-23 | 2008-06-12 | Rohm Co Ltd | 半導体発光素子 |
| JP5214140B2 (ja) | 2006-12-12 | 2013-06-19 | 浜松ホトニクス株式会社 | 半導体発光素子 |
| JP2008211164A (ja) * | 2007-01-29 | 2008-09-11 | Matsushita Electric Ind Co Ltd | 窒化物半導体発光装置及びその製造方法 |
| KR101393353B1 (ko) * | 2007-10-29 | 2014-05-13 | 서울바이오시스 주식회사 | 발광다이오드 |
| KR100986518B1 (ko) | 2008-06-16 | 2010-10-07 | 엘지이노텍 주식회사 | 반도체 발광소자 |
-
2010
- 2010-04-23 KR KR1020100037946A patent/KR101039948B1/ko active Active
-
2011
- 2011-04-21 US US13/091,505 patent/US8338847B2/en active Active
- 2011-04-22 TW TW100114083A patent/TWI543401B/zh active
- 2011-04-22 JP JP2011095931A patent/JP5778466B2/ja active Active
- 2011-04-22 EP EP11163582.7A patent/EP2381492B1/en active Active
- 2011-04-25 CN CN201110108215.1A patent/CN102237458B/zh active Active
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