JP5778466B2 - 発光素子、発光素子パッケージ、及び照明システム - Google Patents
発光素子、発光素子パッケージ、及び照明システム Download PDFInfo
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- JP5778466B2 JP5778466B2 JP2011095931A JP2011095931A JP5778466B2 JP 5778466 B2 JP5778466 B2 JP 5778466B2 JP 2011095931 A JP2011095931 A JP 2011095931A JP 2011095931 A JP2011095931 A JP 2011095931A JP 5778466 B2 JP5778466 B2 JP 5778466B2
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- 239000004065 semiconductor Substances 0.000 claims description 101
- 239000010409 thin film Substances 0.000 claims description 83
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- 230000008859 change Effects 0.000 claims description 22
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- 238000000465 moulding Methods 0.000 claims description 6
- -1 fluoride series compound Chemical class 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 150000004767 nitrides Chemical class 0.000 claims description 2
- 229910005555 GaZnO Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 215
- 239000012071 phase Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 13
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- 239000007789 gas Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
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- 239000010408 film Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000010030 laminating Methods 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 239000007769 metal material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
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- 239000011651 chromium Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
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- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
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- 239000002356 single layer Substances 0.000 description 2
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- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002061 nanopillar Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
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- 230000010287 polarization Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
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- 238000009877 rendering Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
Claims (12)
- 第1半導体層と、
前記第1半導体層の上に形成されて光を生成する活性層と、
前記活性層の上に形成された第2導電型半導体層と、
前記第2導電型半導体層の上に形成された透明電極層と、
前記透明電極層の上に形成され、第1屈折率を有する第1薄膜層と、前記第1屈折率と相異する第2屈折率を有する第2薄膜層が少なくとも1回反復的に積層された多重薄膜ミラーを含み、
前記第2導電型半導体層の厚さ(d)は下記の<数式1>から導出され、
2・Φ1+Φ2=N・2π±Δ、(0≦Δ≦π/2)…<数式1>
[ここで、前記Φ1は垂直方向の光が前記第2導電型半導体層を通過する時に発生する位相変化であって、Φ1=2πnd/λ(nは前記光の屈折率、λは前記光の波長、dは前記第2導電型半導体層の厚さ)であり、前記Φ2は前記光が前記透明電極層または前記多重薄膜ミラーのうち、いずれか1つにより反射される時に発生する位相変化であり、前記Nは自然数である。]
前記光が前記透明電極層または前記多重薄膜ミラーのうち、いずれか1つにより反射される時に発生する前記位相変化(Φ2)は約0°であり、
補強干渉を起こす条件を満たす前記第2導電型半導体層の前記厚さ(d)は、下記の<数式2>により表される、ことを特徴とする、発光素子。
d≒λ/4πn・(N・2π±Δ)、(0≦Δ≦π/2)・・・<数式2> - 前記活性層の厚さはλ/n以下であり、前記nは前記光の屈折率であり、前記λは前記光の波長であることを特徴とする、請求項1に記載の発光素子。
- 前記透明電極層は、ITO、IZO(In−ZnO)、GZO(Ga−ZnO)、AZO(Al−ZnO)、AGZO(Al−GaZnO)、IGZO(In−GaZnO)、IrOx、RuOx、RuOx/ITO、Ni/IrOx/Au及びNi/IrOx/Au/ITOのうち、少なくとも1つを含むことを特徴とする、請求項1又は2に記載の発光素子。
- 前記多重薄膜ミラーの前記第1薄膜層の厚さは(2m+1)・λ/4n1±Δ1であり、Δ1≦λ/8n1であり、前記第2薄膜層の厚さは(2m+1)・λ/4n2±Δ2であり、Δ2≦λ/8n2であり、
ここで、前記n1は前記第1薄膜層の第1屈折率であり、前記n2は前記第2薄膜層の第2屈折率であり、前記λは光の波長であり、mは自然数であることを特徴とする、請求項1乃至3のいずれかに記載の発光素子。 - 前記第1薄膜層及び第2薄膜層は、酸化物、窒化物、または弗化物系列の化合物のうちのいずれか1つで形成されたことを特徴とする、請求項1乃至4のいずれかに記載の発光素子。
- 前記第1薄膜層はTiO2で形成され、前記第2薄膜層はSiO2で形成されたことを特徴とする、請求項1乃至5のいずれかに記載の発光素子。
- 前記第1薄膜層の前記第1屈折率は前記透明電極層の屈折率及び前記第2薄膜層の第2屈折率より大きいか、前記透明電極層の屈折率及び前記第2薄膜層の第2屈折率より小さいことを特徴とする、請求項1乃至6のいずれかに記載の発光素子。
- 前記第1半導体層は基板の上に形成されることを特徴とする、請求項1乃至7のいずれかに記載の発光素子。
- 前記第1半導体層の上に第1電極が形成され、前記透明電極層の上に第2電極が形成されたことを特徴とする、請求項1乃至8のいずれかに記載の発光素子。
- 前記多重薄膜ミラーは前記第1電極及び第2電極と垂直方向でオーバーラップしないように形成されることを特徴とする、請求項9に記載の発光素子。
- 胴体と、
前記胴体に設置された第1電極層及び第2電極層と、
前記胴体に設置されて前記第1電極層及び前記第2電極層に電気的に連結される請求項1乃至10のうちのいずれか1つに記載された発光素子と、
前記胴体の上に前記発光素子を囲むモールディング部材と、を含むことを特徴とする、発光素子パッケージ。 - 発光素子を光源として使用する照明システムであって、
前記照明システムは、基板と、前記基板の上に設置された少なくとも1つの発光素子を含み、
前記発光素子は請求項1乃至10のうちのいずれか1つに記載された照明システム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020100037946A KR101039948B1 (ko) | 2010-04-23 | 2010-04-23 | 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 |
KR10-2010-0037946 | 2010-04-23 |
Publications (3)
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JP2011233891A JP2011233891A (ja) | 2011-11-17 |
JP2011233891A5 JP2011233891A5 (ja) | 2014-06-05 |
JP5778466B2 true JP5778466B2 (ja) | 2015-09-16 |
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JP2011095931A Active JP5778466B2 (ja) | 2010-04-23 | 2011-04-22 | 発光素子、発光素子パッケージ、及び照明システム |
Country Status (6)
Country | Link |
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US (1) | US8338847B2 (ja) |
EP (1) | EP2381492B1 (ja) |
JP (1) | JP5778466B2 (ja) |
KR (1) | KR101039948B1 (ja) |
CN (1) | CN102237458B (ja) |
TW (1) | TWI543401B (ja) |
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KR101967837B1 (ko) * | 2013-03-11 | 2019-04-10 | 삼성전자주식회사 | 반도체 발광 소자 |
KR102527387B1 (ko) * | 2016-02-24 | 2023-04-28 | 삼성전자주식회사 | 발광 소자 패키지 및 그 제조 방법 |
KR102555005B1 (ko) * | 2016-11-24 | 2023-07-14 | 삼성전자주식회사 | 반도체 발광 소자 및 반도체 발광 소자의 제조 방법 |
CN109407407B (zh) * | 2018-12-21 | 2021-10-22 | 厦门天马微电子有限公司 | 显示装置 |
Family Cites Families (19)
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JPH09219562A (ja) * | 1996-02-09 | 1997-08-19 | Fujitsu Ltd | 半導体発光素子 |
JP2001024282A (ja) * | 1999-07-09 | 2001-01-26 | Hitachi Ltd | Iii−v族混晶半導体を用いた半導体装置の製造方法及び光通信システム |
US20020047131A1 (en) * | 1999-12-22 | 2002-04-25 | Ludowise Michael J. | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
JP2004119756A (ja) * | 2002-09-27 | 2004-04-15 | Fuji Photo Film Co Ltd | 発光ダイオード |
US6900474B2 (en) * | 2002-12-20 | 2005-05-31 | Lumileds Lighting U.S., Llc | Light emitting devices with compact active regions |
JP4330476B2 (ja) * | 2004-03-29 | 2009-09-16 | スタンレー電気株式会社 | 半導体発光素子 |
DE102005016592A1 (de) * | 2004-04-14 | 2005-11-24 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
JP2005317676A (ja) * | 2004-04-27 | 2005-11-10 | Sony Corp | 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法 |
US7483466B2 (en) * | 2005-04-28 | 2009-01-27 | Canon Kabushiki Kaisha | Vertical cavity surface emitting laser device |
JP4027392B2 (ja) * | 2005-04-28 | 2007-12-26 | キヤノン株式会社 | 垂直共振器型面発光レーザ装置 |
KR100646636B1 (ko) | 2005-06-28 | 2006-11-23 | 서울옵토디바이스주식회사 | 발광 소자 및 이의 제조 방법 |
EP2003704A1 (en) | 2006-02-28 | 2008-12-17 | Rohm Co., Ltd. | Semiconductor light emitting element |
KR100736623B1 (ko) * | 2006-05-08 | 2007-07-09 | 엘지전자 주식회사 | 수직형 발광 소자 및 그 제조방법 |
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JP5214140B2 (ja) | 2006-12-12 | 2013-06-19 | 浜松ホトニクス株式会社 | 半導体発光素子 |
JP2008211164A (ja) * | 2007-01-29 | 2008-09-11 | Matsushita Electric Ind Co Ltd | 窒化物半導体発光装置及びその製造方法 |
KR101393353B1 (ko) * | 2007-10-29 | 2014-05-13 | 서울바이오시스 주식회사 | 발광다이오드 |
KR100986518B1 (ko) | 2008-06-16 | 2010-10-07 | 엘지이노텍 주식회사 | 반도체 발광소자 |
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2010
- 2010-04-23 KR KR1020100037946A patent/KR101039948B1/ko active IP Right Grant
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2011
- 2011-04-21 US US13/091,505 patent/US8338847B2/en active Active
- 2011-04-22 JP JP2011095931A patent/JP5778466B2/ja active Active
- 2011-04-22 EP EP11163582.7A patent/EP2381492B1/en active Active
- 2011-04-22 TW TW100114083A patent/TWI543401B/zh active
- 2011-04-25 CN CN201110108215.1A patent/CN102237458B/zh active Active
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Publication number | Publication date |
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EP2381492A3 (en) | 2014-11-05 |
EP2381492A2 (en) | 2011-10-26 |
CN102237458A (zh) | 2011-11-09 |
EP2381492B1 (en) | 2018-02-14 |
US8338847B2 (en) | 2012-12-25 |
JP2011233891A (ja) | 2011-11-17 |
TW201214781A (en) | 2012-04-01 |
CN102237458B (zh) | 2014-02-12 |
KR101039948B1 (ko) | 2011-06-09 |
TWI543401B (zh) | 2016-07-21 |
US20110260187A1 (en) | 2011-10-27 |
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