JP2011129921A - 発光素子、発光素子の製造方法、発光素子パッケージ及び照明システム - Google Patents
発光素子、発光素子の製造方法、発光素子パッケージ及び照明システム Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims description 31
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- 238000000465 moulding Methods 0.000 claims description 5
- 238000002834 transmittance Methods 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 241000408495 Iton Species 0.000 claims 1
- 229910020923 Sn-O Inorganic materials 0.000 claims 1
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- -1 Indium-Tin Oxide Nitride Chemical class 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
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- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
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- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
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- 238000007733 ion plating Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
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- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
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- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- 239000002210 silicon-based material Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
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- 239000000057 synthetic resin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Led Device Packages (AREA)
Abstract
【解決手段】本発明による発光素子は、導電性支持層と、導電性支持層上に、第1電気伝導性を有する第1の透明伝導層及び第1電気伝導性よりも低い第2電気伝導性を有する第2の透明伝導層を含む透明伝導層と、透明伝導層上に、第1導電型の半導体層、第2導電型の半導体層及び第1導電型の半導体層と第2導電型の半導体層の間の活性層を含む発光構造層と、発光構造層上に、第2の透明伝導層と垂直方向にオーバーラップする領域に少なくとも一部分が配置される電極と、を含む。
【選択図】図1
Description
30 活性層
40 第2導電型の半導体層
50 発光構造層
60 透明伝導層
61 第1の透明伝導層
62 第2の透明伝導層
70 反射層
80 導電性支持層
90 電極
Claims (20)
- 導電性支持層と、
前記導電性支持層上に形成され、第1電気伝導性を有する第1の透明伝導層及び前記第1電気伝導性よりも低い第2電気伝導性を有する第2の透明伝導層を含む透明伝導層と、
前記透明伝導層上に形成され、第1導電型の半導体層、第2導電型の半導体層及び前記第1導電型の半導体層と前記第2導電型の半導体層の間の活性層を含む発光構造層と、
前記発光構造層上に形成され、前記第2の透明伝導層と垂直方向にオーバーラップする領域に少なくとも一部分が配置される電極と、
を含む発光素子。 - 前記第1の透明伝導層は第1仕事関数を有し、前記第2の透明伝導層は第1仕事関数よりも小さい第2仕事関数を有する請求項1に記載の発光素子。
- 前記第1の透明伝導層は前記発光構造層とオーミック接触領域を形成し、前記第2の透明伝導層は前記発光構造層とショットキー接触領域を形成する請求項1に記載の発光素子。
- 前記透明伝導層と前記導電性支持層の間に反射層をさらに含む請求項1に記載の発光素子。
- 前記透明伝導層は、50%以上の光透過率を有し、10Ω/sq以下の面抵抗を有する物質を含む請求項1に記載の発光素子。
- 前記透明伝導層は、透明伝導酸化物、透明伝導窒化物、透明伝導酸化窒化物のうち少なくとも何れか一つを含む請求項1に記載の発光素子。
- 前記透明伝導酸化物は、ITO、ZnO、AZO、IZO、ATO、ZITO、Sn‐O、In‐O、Ga‐Oのうち何れか一つであり、前記透明伝導窒化物は、TiN、CrN、TaN、In‐Nのうち少なくとも何れか一つであり、前記透明伝導酸化窒化物は、ITON、ZnON、O‐In‐N、IZONのうち何れか一つである請求項6に記載の発光素子。
- 前記第1の透明伝導層と前記第2の透明伝導層は互いに異なる物質で形成される請求項1に記載の発光素子。
- 前記第2の透明伝導層の少なくとも一部は、前記発光構造層の下面中央部で前記発光構造層と接触し、前記第1の透明伝導層の少なくとも一部は、前記発光構造層の下面周辺部で発光構造層と接触する請求項1に記載の発光素子。
- 前記第1の透明伝導層と前記第2の透明伝導層は同一水平面上に配置される請求項1に記載の発光素子。
- 前記第1の透明伝導層と前記第2の透明伝導層は少なくとも一部が垂直方向にオーバーラップする請求項10に記載の発光素子。
- 前記第1の透明伝導層と前記第2の透明伝導層は離隔配置される請求項10に記載の発光素子。
- 前記第1の透明伝導層の周辺部は前記発光構造層の外側に露出する請求項1に記載の発光素子。
- 本体と、
前記本体上の第1の電極層及び第2の電極層と、
前記本体上に設けられ、前記第1の電極層及び第2の電極層と電気的に接続される発光素子と、
前記本体上の前記発光素子を取り囲むモールディング部材と、
を含む発光素子パッケージであって、
前記発光素子は、
導電性支持層と、
前記導電性支持層上に形成され、第1電気伝導性を有する第1の透明伝導層及び前記第1電気伝導性よりも低い第2電気伝導性を有する第2の透明伝導層を含む透明伝導層と、
前記透明伝導層上に形成され、第1導電型の半導体層、第2導電型の半導体層及び前記第1導電型の半導体層と前記第2導電型の半導体層の間の活性層を含む発光構造層と、
前記発光構造層上に形成され、前記第2の透明伝導層と垂直方向にオーバーラップする領域に少なくとも一部が配置される電極と、
を含む発光素子パッケージ。 - 前記第1の透明伝導層は第1仕事関数を有し、前記第2の透明伝導層は第1仕事関数よりも小さい第2仕事関数を有する請求項14に記載の発光素子パッケージ。
- 前記第1の透明伝導層は前記発光構造層とオーミック接触領域を形成し、前記第2の透明伝導層は前記発光構造層とショットキー接触領域を形成する請求項14に記載の発光素子パッケージ。
- 前記透明伝導層と前記導電性支持層の間に反射層をさらに含む請求項14に記載の発光素子パッケージ。
- 前記透明伝導層は、透明伝導酸化物、透明伝導窒化物、透明伝導酸化窒化物のうち少なくとも何れか一つを含む請求項14に記載の発光素子パッケージ。
- 発光素子を光源として使用する照明システムであり、
基板と、
前記基板上に設けられた少なくとも一つの発光素子と、
を含み、前記発光素子は、
導電性支持層と、
前記導電性支持層上に形成され、第1電気伝導性を有する第1の透明伝導層及び前記第1電気伝導性よりも低い第2電気伝導性を有する第2の透明伝導層を含む透明伝導層と、
前記透明伝導層上に形成され、第1導電型の半導体層、第2導電型の半導体層及び第1導電型の半導体層と第2導電型の半導体層の間の活性層を含む発光構造層と、
前記発光構造層上に形成され、第2の透明伝導層と垂直方向にオーバーラップする領域に少なくとも一部が配置される電極と、
を含む照明システム。 - 成長基板上に発光構造層を形成する段階と、
前記発光構造層上の第1領域に接する第1の透明伝導層及び前記発光構造層上の第2領域に接する第2の透明伝導層を含む透明伝導層を形成する段階と、
前記透明伝導層上に導電性支持層を形成する段階と、
前記成長基板を除去する段階と、
前記成長基板が除去されるにことよって露出した前記発光構造層上に、前記第2領域と少なくとも一部が垂直方向にオーバーラップするよう、電極を形成する段階と、
を含む発光素子の製造方法であって、
前記第1の透明伝導層は第1電気伝導性を有し、前記第2の透明伝導層は第1電気伝導性よりも低い第2電気伝導性を有する方法。
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US20140110734A1 (en) | 2014-04-24 |
US20120091492A1 (en) | 2012-04-19 |
JP5379116B2 (ja) | 2013-12-25 |
CN102130104A (zh) | 2011-07-20 |
KR101020945B1 (ko) | 2011-03-09 |
US8564738B2 (en) | 2013-10-22 |
JP5882276B2 (ja) | 2016-03-09 |
EP2337098A2 (en) | 2011-06-22 |
EP2337098A3 (en) | 2014-06-18 |
EP2337098B1 (en) | 2019-06-19 |
JP6267245B2 (ja) | 2018-01-24 |
JP2013254991A (ja) | 2013-12-19 |
US8102484B2 (en) | 2012-01-24 |
US20110147780A1 (en) | 2011-06-23 |
JP2016129235A (ja) | 2016-07-14 |
US9166113B2 (en) | 2015-10-20 |
CN102130104B (zh) | 2013-10-23 |
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