CN102237458B - 发光器件及其制造方法、发光器件封装以及发光系统 - Google Patents

发光器件及其制造方法、发光器件封装以及发光系统 Download PDF

Info

Publication number
CN102237458B
CN102237458B CN201110108215.1A CN201110108215A CN102237458B CN 102237458 B CN102237458 B CN 102237458B CN 201110108215 A CN201110108215 A CN 201110108215A CN 102237458 B CN102237458 B CN 102237458B
Authority
CN
China
Prior art keywords
light emitting
emitting device
light
layer
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110108215.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN102237458A (zh
Inventor
金鲜京
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN102237458A publication Critical patent/CN102237458A/zh
Application granted granted Critical
Publication of CN102237458B publication Critical patent/CN102237458B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors

Landscapes

  • Led Devices (AREA)
CN201110108215.1A 2010-04-23 2011-04-25 发光器件及其制造方法、发光器件封装以及发光系统 Active CN102237458B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0037946 2010-04-23
KR1020100037946A KR101039948B1 (ko) 2010-04-23 2010-04-23 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지

Publications (2)

Publication Number Publication Date
CN102237458A CN102237458A (zh) 2011-11-09
CN102237458B true CN102237458B (zh) 2014-02-12

Family

ID=44305117

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110108215.1A Active CN102237458B (zh) 2010-04-23 2011-04-25 发光器件及其制造方法、发光器件封装以及发光系统

Country Status (6)

Country Link
US (1) US8338847B2 (enExample)
EP (1) EP2381492B1 (enExample)
JP (1) JP5778466B2 (enExample)
KR (1) KR101039948B1 (enExample)
CN (1) CN102237458B (enExample)
TW (1) TWI543401B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101967837B1 (ko) * 2013-03-11 2019-04-10 삼성전자주식회사 반도체 발광 소자
KR102527387B1 (ko) * 2016-02-24 2023-04-28 삼성전자주식회사 발광 소자 패키지 및 그 제조 방법
KR102555005B1 (ko) * 2016-11-24 2023-07-14 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자의 제조 방법
CN109407407B (zh) * 2018-12-21 2021-10-22 厦门天马微电子有限公司 显示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7141825B2 (en) * 2004-03-29 2006-11-28 Stanley Electric Co., Ltd. Semiconductor light emitting device capable of suppressing silver migration of reflection film made of silver

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09219562A (ja) * 1996-02-09 1997-08-19 Fujitsu Ltd 半導体発光素子
JP2001024282A (ja) * 1999-07-09 2001-01-26 Hitachi Ltd Ｉｉｉ−ｖ族混晶半導体を用いた半導体装置の製造方法及び光通信システム
US20020047131A1 (en) * 1999-12-22 2002-04-25 Ludowise Michael J. Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
JP2004119756A (ja) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd 発光ダイオード
US6900474B2 (en) * 2002-12-20 2005-05-31 Lumileds Lighting U.S., Llc Light emitting devices with compact active regions
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
JP2005317676A (ja) * 2004-04-27 2005-11-10 Sony Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
JP4027392B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 垂直共振器型面発光レーザ装置
US7483466B2 (en) * 2005-04-28 2009-01-27 Canon Kabushiki Kaisha Vertical cavity surface emitting laser device
KR100646636B1 (ko) 2005-06-28 2006-11-23 서울옵토디바이스주식회사 발광 소자 및 이의 제조 방법
WO2007099855A1 (ja) 2006-02-28 2007-09-07 Rohm Co., Ltd. 半導体発光素子
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
CN101523603B (zh) * 2006-08-06 2013-11-06 光波光电技术公司 具有一个或多个谐振反射器的ⅲ族氮化物发光器件以及用于该器件的反射工程化生长模板和方法
JP2008135697A (ja) * 2006-10-23 2008-06-12 Rohm Co Ltd 半導体発光素子
JP5214140B2 (ja) 2006-12-12 2013-06-19 浜松ホトニクス株式会社 半導体発光素子
JP2008211164A (ja) * 2007-01-29 2008-09-11 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置及びその製造方法
KR101393353B1 (ko) * 2007-10-29 2014-05-13 서울바이오시스 주식회사 발광다이오드
KR100986518B1 (ko) * 2008-06-16 2010-10-07 엘지이노텍 주식회사 반도체 발광소자

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7141825B2 (en) * 2004-03-29 2006-11-28 Stanley Electric Co., Ltd. Semiconductor light emitting device capable of suppressing silver migration of reflection film made of silver

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开2005-317676A 2005.11.10

Also Published As

Publication number Publication date
US20110260187A1 (en) 2011-10-27
JP2011233891A (ja) 2011-11-17
US8338847B2 (en) 2012-12-25
KR101039948B1 (ko) 2011-06-09
TW201214781A (en) 2012-04-01
EP2381492B1 (en) 2018-02-14
TWI543401B (zh) 2016-07-21
JP5778466B2 (ja) 2015-09-16
CN102237458A (zh) 2011-11-09
EP2381492A3 (en) 2014-11-05
EP2381492A2 (en) 2011-10-26

Similar Documents

Publication Publication Date Title
CN102237463B (zh) 发光器件及其制造方法、发光器件封装以及发光系统
CN102169939B (zh) 发光器件、发光器件封装以及照明系统
CN101814563B (zh) 发光器件、发光器件封装和包括其的照明系统
CN102163674B (zh) 发光器件及其制造方法、发光器件封装以及照明系统
CN102074633B (zh) 发光器件、发光器件封装、以及照明系统
CN102163653B (zh) 发光器件、发光器件封装、制造发光器件的方法和照明系统
CN102148305B (zh) 发光器件、发光器件封装
CN102104095A (zh) 发光器件、发光器件封装、制造发光器件的方法和照明系统
CN102237465A (zh) 发光器件
CN102074621A (zh) 发光器件、制造该发光器件的方法、发光器件封装和照明系统
CN102044610B (zh) 发光器件及其制造方法、发光器件封装和照明系统
KR20120111364A (ko) 발광 소자 및 발광 소자 패키지
CN102074626A (zh) 发光器件、发光器件封装以及照明系统
CN102214759A (zh) 发光器件、发光器件封装以及照明系统
CN102201513B (zh) 发光器件及其制造方法、发光器件封装以及照明系统
KR20130005961A (ko) 발광 소자 및 그 제조방법
CN102237458B (zh) 发光器件及其制造方法、发光器件封装以及发光系统
CN102208509B (zh) 发光器件、用于制造发光器件的方法以及发光器件封装
CN102044612B (zh) 发光器件及其制造方法、发光器件封装和照明系统
CN102468420B (zh) 发光器件
CN102468420A (zh) 发光器件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20210819

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

TR01 Transfer of patent right
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address