JP5778466B2 - 発光素子、発光素子パッケージ、及び照明システム - Google Patents

発光素子、発光素子パッケージ、及び照明システム Download PDF

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Publication number
JP5778466B2
JP5778466B2 JP2011095931A JP2011095931A JP5778466B2 JP 5778466 B2 JP5778466 B2 JP 5778466B2 JP 2011095931 A JP2011095931 A JP 2011095931A JP 2011095931 A JP2011095931 A JP 2011095931A JP 5778466 B2 JP5778466 B2 JP 5778466B2
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Japan
Prior art keywords
light emitting
light
layer
thin film
emitting device
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JP2011095931A
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English (en)
Japanese (ja)
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JP2011233891A (ja
JP2011233891A5 (enExample
Inventor
鮮京 金
鮮京 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Publication of JP2011233891A publication Critical patent/JP2011233891A/ja
Publication of JP2011233891A5 publication Critical patent/JP2011233891A5/ja
Application granted granted Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors

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  • Led Devices (AREA)
JP2011095931A 2010-04-23 2011-04-22 発光素子、発光素子パッケージ、及び照明システム Active JP5778466B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0037946 2010-04-23
KR1020100037946A KR101039948B1 (ko) 2010-04-23 2010-04-23 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지

Publications (3)

Publication Number Publication Date
JP2011233891A JP2011233891A (ja) 2011-11-17
JP2011233891A5 JP2011233891A5 (enExample) 2014-06-05
JP5778466B2 true JP5778466B2 (ja) 2015-09-16

Family

ID=44305117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011095931A Active JP5778466B2 (ja) 2010-04-23 2011-04-22 発光素子、発光素子パッケージ、及び照明システム

Country Status (6)

Country Link
US (1) US8338847B2 (enExample)
EP (1) EP2381492B1 (enExample)
JP (1) JP5778466B2 (enExample)
KR (1) KR101039948B1 (enExample)
CN (1) CN102237458B (enExample)
TW (1) TWI543401B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101967837B1 (ko) * 2013-03-11 2019-04-10 삼성전자주식회사 반도체 발광 소자
KR102527387B1 (ko) * 2016-02-24 2023-04-28 삼성전자주식회사 발광 소자 패키지 및 그 제조 방법
KR102555005B1 (ko) * 2016-11-24 2023-07-14 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자의 제조 방법
CN109407407B (zh) * 2018-12-21 2021-10-22 厦门天马微电子有限公司 显示装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09219562A (ja) * 1996-02-09 1997-08-19 Fujitsu Ltd 半導体発光素子
JP2001024282A (ja) * 1999-07-09 2001-01-26 Hitachi Ltd Ｉｉｉ−ｖ族混晶半導体を用いた半導体装置の製造方法及び光通信システム
US20020047131A1 (en) * 1999-12-22 2002-04-25 Ludowise Michael J. Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
JP2004119756A (ja) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd 発光ダイオード
US6900474B2 (en) * 2002-12-20 2005-05-31 Lumileds Lighting U.S., Llc Light emitting devices with compact active regions
JP4330476B2 (ja) * 2004-03-29 2009-09-16 スタンレー電気株式会社 半導体発光素子
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
JP2005317676A (ja) * 2004-04-27 2005-11-10 Sony Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
JP4027392B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 垂直共振器型面発光レーザ装置
US7483466B2 (en) * 2005-04-28 2009-01-27 Canon Kabushiki Kaisha Vertical cavity surface emitting laser device
KR100646636B1 (ko) 2005-06-28 2006-11-23 서울옵토디바이스주식회사 발광 소자 및 이의 제조 방법
WO2007099855A1 (ja) 2006-02-28 2007-09-07 Rohm Co., Ltd. 半導体発光素子
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
CN101523603B (zh) * 2006-08-06 2013-11-06 光波光电技术公司 具有一个或多个谐振反射器的ⅲ族氮化物发光器件以及用于该器件的反射工程化生长模板和方法
JP2008135697A (ja) * 2006-10-23 2008-06-12 Rohm Co Ltd 半導体発光素子
JP5214140B2 (ja) 2006-12-12 2013-06-19 浜松ホトニクス株式会社 半導体発光素子
JP2008211164A (ja) * 2007-01-29 2008-09-11 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置及びその製造方法
KR101393353B1 (ko) * 2007-10-29 2014-05-13 서울바이오시스 주식회사 발광다이오드
KR100986518B1 (ko) * 2008-06-16 2010-10-07 엘지이노텍 주식회사 반도체 발광소자

Also Published As

Publication number Publication date
US20110260187A1 (en) 2011-10-27
JP2011233891A (ja) 2011-11-17
US8338847B2 (en) 2012-12-25
KR101039948B1 (ko) 2011-06-09
TW201214781A (en) 2012-04-01
EP2381492B1 (en) 2018-02-14
TWI543401B (zh) 2016-07-21
CN102237458B (zh) 2014-02-12
CN102237458A (zh) 2011-11-09
EP2381492A3 (en) 2014-11-05
EP2381492A2 (en) 2011-10-26

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