KR101039948B1 - 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 - Google Patents

발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 Download PDF

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Publication number
KR101039948B1
KR101039948B1 KR1020100037946A KR20100037946A KR101039948B1 KR 101039948 B1 KR101039948 B1 KR 101039948B1 KR 1020100037946 A KR1020100037946 A KR 1020100037946A KR 20100037946 A KR20100037946 A KR 20100037946A KR 101039948 B1 KR101039948 B1 KR 101039948B1
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South Korea
Prior art keywords
layer
thin film
semiconductor layer
light
refractive index
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KR1020100037946A
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English (en)
Korean (ko)
Inventor
김선경
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엘지이노텍 주식회사
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Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020100037946A priority Critical patent/KR101039948B1/ko
Priority to US13/091,505 priority patent/US8338847B2/en
Priority to JP2011095931A priority patent/JP5778466B2/ja
Priority to EP11163582.7A priority patent/EP2381492B1/en
Priority to TW100114083A priority patent/TWI543401B/zh
Priority to CN201110108215.1A priority patent/CN102237458B/zh
Application granted granted Critical
Publication of KR101039948B1 publication Critical patent/KR101039948B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors

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  • Led Devices (AREA)
KR1020100037946A 2010-04-23 2010-04-23 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지 Active KR101039948B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020100037946A KR101039948B1 (ko) 2010-04-23 2010-04-23 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
US13/091,505 US8338847B2 (en) 2010-04-23 2011-04-21 Light emitting device, method of manufacturing the same, light emitting device package and lighting system
JP2011095931A JP5778466B2 (ja) 2010-04-23 2011-04-22 発光素子、発光素子パッケージ、及び照明システム
EP11163582.7A EP2381492B1 (en) 2010-04-23 2011-04-22 Light emitting device with resonant thickness of one semiconductor layer
TW100114083A TWI543401B (zh) 2010-04-23 2011-04-22 發光裝置、發光裝置封裝件及照明系統
CN201110108215.1A CN102237458B (zh) 2010-04-23 2011-04-25 发光器件及其制造方法、发光器件封装以及发光系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100037946A KR101039948B1 (ko) 2010-04-23 2010-04-23 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지

Publications (1)

Publication Number Publication Date
KR101039948B1 true KR101039948B1 (ko) 2011-06-09

Family

ID=44305117

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100037946A Active KR101039948B1 (ko) 2010-04-23 2010-04-23 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지

Country Status (6)

Country Link
US (1) US8338847B2 (enExample)
EP (1) EP2381492B1 (enExample)
JP (1) JP5778466B2 (enExample)
KR (1) KR101039948B1 (enExample)
CN (1) CN102237458B (enExample)
TW (1) TWI543401B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101967837B1 (ko) * 2013-03-11 2019-04-10 삼성전자주식회사 반도체 발광 소자
KR102527387B1 (ko) * 2016-02-24 2023-04-28 삼성전자주식회사 발광 소자 패키지 및 그 제조 방법
KR102555005B1 (ko) * 2016-11-24 2023-07-14 삼성전자주식회사 반도체 발광 소자 및 반도체 발광 소자의 제조 방법
CN109407407B (zh) * 2018-12-21 2021-10-22 厦门天马微电子有限公司 显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100646636B1 (ko) 2005-06-28 2006-11-23 서울옵토디바이스주식회사 발광 소자 및 이의 제조 방법
JP2008147519A (ja) 2006-12-12 2008-06-26 Hamamatsu Photonics Kk 半導体発光素子
KR20080087175A (ko) * 2006-02-28 2008-09-30 로무 가부시키가이샤 반도체 발광 소자
KR20090043057A (ko) * 2007-10-29 2009-05-06 서울옵토디바이스주식회사 발광다이오드

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09219562A (ja) * 1996-02-09 1997-08-19 Fujitsu Ltd 半導体発光素子
JP2001024282A (ja) * 1999-07-09 2001-01-26 Hitachi Ltd Ｉｉｉ−ｖ族混晶半導体を用いた半導体装置の製造方法及び光通信システム
US20020047131A1 (en) * 1999-12-22 2002-04-25 Ludowise Michael J. Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction
JP2004119756A (ja) * 2002-09-27 2004-04-15 Fuji Photo Film Co Ltd 発光ダイオード
US6900474B2 (en) * 2002-12-20 2005-05-31 Lumileds Lighting U.S., Llc Light emitting devices with compact active regions
JP4330476B2 (ja) * 2004-03-29 2009-09-16 スタンレー電気株式会社 半導体発光素子
DE102005016592A1 (de) * 2004-04-14 2005-11-24 Osram Opto Semiconductors Gmbh Leuchtdiodenchip
JP2005317676A (ja) * 2004-04-27 2005-11-10 Sony Corp 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
JP4027392B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 垂直共振器型面発光レーザ装置
US7483466B2 (en) * 2005-04-28 2009-01-27 Canon Kabushiki Kaisha Vertical cavity surface emitting laser device
KR100736623B1 (ko) * 2006-05-08 2007-07-09 엘지전자 주식회사 수직형 발광 소자 및 그 제조방법
CN101523603B (zh) * 2006-08-06 2013-11-06 光波光电技术公司 具有一个或多个谐振反射器的ⅲ族氮化物发光器件以及用于该器件的反射工程化生长模板和方法
JP2008135697A (ja) * 2006-10-23 2008-06-12 Rohm Co Ltd 半導体発光素子
JP2008211164A (ja) * 2007-01-29 2008-09-11 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置及びその製造方法
KR100986518B1 (ko) * 2008-06-16 2010-10-07 엘지이노텍 주식회사 반도체 발광소자

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100646636B1 (ko) 2005-06-28 2006-11-23 서울옵토디바이스주식회사 발광 소자 및 이의 제조 방법
KR20080087175A (ko) * 2006-02-28 2008-09-30 로무 가부시키가이샤 반도체 발광 소자
JP2008147519A (ja) 2006-12-12 2008-06-26 Hamamatsu Photonics Kk 半導体発光素子
KR20090043057A (ko) * 2007-10-29 2009-05-06 서울옵토디바이스주식회사 발광다이오드

Also Published As

Publication number Publication date
US20110260187A1 (en) 2011-10-27
JP2011233891A (ja) 2011-11-17
US8338847B2 (en) 2012-12-25
TW201214781A (en) 2012-04-01
EP2381492B1 (en) 2018-02-14
TWI543401B (zh) 2016-07-21
JP5778466B2 (ja) 2015-09-16
CN102237458B (zh) 2014-02-12
CN102237458A (zh) 2011-11-09
EP2381492A3 (en) 2014-11-05
EP2381492A2 (en) 2011-10-26

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