JP2011228692A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2011228692A
JP2011228692A JP2011078565A JP2011078565A JP2011228692A JP 2011228692 A JP2011228692 A JP 2011228692A JP 2011078565 A JP2011078565 A JP 2011078565A JP 2011078565 A JP2011078565 A JP 2011078565A JP 2011228692 A JP2011228692 A JP 2011228692A
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Prior art keywords
film
oxide semiconductor
semiconductor film
metal oxide
transistor
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Japanese (ja)
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JP2011228692A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2011078565A priority Critical patent/JP2011228692A/ja
Publication of JP2011228692A publication Critical patent/JP2011228692A/ja
Publication of JP2011228692A5 publication Critical patent/JP2011228692A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device

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  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Liquid Crystal (AREA)
  • Dram (AREA)
JP2011078565A 2010-04-02 2011-03-31 半導体装置 Withdrawn JP2011228692A (ja)

Priority Applications (1)

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JP2011078565A JP2011228692A (ja) 2010-04-02 2011-03-31 半導体装置

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JP2010086472 2010-04-02
JP2010086472 2010-04-02
JP2011078565A JP2011228692A (ja) 2010-04-02 2011-03-31 半導体装置

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JP2015180855A Division JP6049973B2 (ja) 2010-04-02 2015-09-14 半導体装置の作製方法及び半導体装置

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JP2011228692A true JP2011228692A (ja) 2011-11-10
JP2011228692A5 JP2011228692A5 (enExample) 2014-05-15

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JP2015180855A Active JP6049973B2 (ja) 2010-04-02 2015-09-14 半導体装置の作製方法及び半導体装置

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US (1) US9196739B2 (enExample)
JP (2) JP2011228692A (enExample)

Cited By (1)

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JP2024091711A (ja) * 2018-12-28 2024-07-05 株式会社半導体エネルギー研究所 半導体装置

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KR20180122756A (ko) 2010-04-02 2018-11-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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KR101540039B1 (ko) 2010-04-23 2015-07-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
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JP6053098B2 (ja) 2011-03-28 2016-12-27 株式会社半導体エネルギー研究所 半導体装置
KR20130007426A (ko) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9166055B2 (en) 2011-06-17 2015-10-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR102282833B1 (ko) 2011-06-17 2021-07-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
US9385238B2 (en) 2011-07-08 2016-07-05 Semiconductor Energy Laboratory Co., Ltd. Transistor using oxide semiconductor
TWI604609B (zh) 2012-02-02 2017-11-01 半導體能源研究所股份有限公司 半導體裝置
CN104380473B (zh) 2012-05-31 2017-10-13 株式会社半导体能源研究所 半导体装置
JP6134598B2 (ja) 2012-08-02 2017-05-24 株式会社半導体エネルギー研究所 半導体装置
TWI582993B (zh) 2012-11-30 2017-05-11 半導體能源研究所股份有限公司 半導體裝置
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI614813B (zh) * 2013-01-21 2018-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6250883B2 (ja) 2013-03-01 2017-12-20 株式会社半導体エネルギー研究所 半導体装置
TWI677989B (zh) 2013-09-19 2019-11-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102340066B1 (ko) * 2016-04-07 2021-12-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박리 방법 및 플렉시블 디바이스의 제작 방법
JP6782211B2 (ja) * 2017-09-08 2020-11-11 株式会社東芝 透明電極、それを用いた素子、および素子の製造方法

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