JP2011176130A - 結晶成長方法 - Google Patents
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- 238000002109 crystal growth method Methods 0.000 title claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000000151 deposition Methods 0.000 claims abstract description 55
- 239000013078 crystal Substances 0.000 claims abstract description 54
- 230000008021 deposition Effects 0.000 claims abstract description 54
- 150000004767 nitrides Chemical class 0.000 claims abstract description 42
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 21
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 39
- 229910002601 GaN Inorganic materials 0.000 description 36
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 8
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
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Abstract
【解決手段】凹凸が設けられた主面を有する基板の前記主面に窒化物半導体の結晶を成長させる結晶成長方法であって、前記主面に、GaxAl1−xN(0.1≦x<0.5)を含み、厚さが20ナノメートル以上50ナノメートル以下のバッファ層を、0.1マイクロメートル/時以下の速度で堆積し、前記バッファ層の上に、前記バッファ層の堆積における前記基板の温度よりも高い温度で、窒化物半導体を含む結晶を成長させる。このように、バッファ層の堆積レートRtとバッファ層の平均の厚さTを適切に管理することにより、バッファ層の上に形成された窒化物半導体結晶の表面モフォロジーの良好な平坦性が実現できるとともに、結晶欠陥であるピット発生数Npをきわめて小さくすることができる。
【選択図】図1
Description
なお、図面は模式的または概念的なものであり、各部分の厚みと幅との関係、部分間の大きさの比率などは、必ずしも現実のものと同一とは限らない。また、同じ部分を表す場合であっても、図面により互いの寸法や比率が異なって表される場合もある。
なお、本願明細書と各図において、既出の図に関して前述したものと同様の要素には同一の符号を付して詳細な説明は適宜省略する。
図1は、本発明の実施形態に係る結晶成長方法に関する実験結果を例示するグラフ図である。
図2は、本発明の実施形態に係る結晶成長方法が適用される半導体発光素子の構成を例示する模式的断面図である。
図3は、本発明の実施形態に係る結晶成長方法を例示するフローチャート図である。
図4は、結晶成長方法に関する実験結果を例示する顕微鏡写真図である。
まず、図2を用いて本発明の実施形態に係る結晶成長方法が適用される半導体発光素子の構成の例について説明する。
すなわち、図3に表したように、基板5の主面5aに、GaxAl1−xN(0.1≦x<0.5)を含み、厚さ(例えば平均の厚さ)が20ナノメートル(nm)以上50nm以下のバッファ層6を、0.1マイクロメートル/時(μm/h)以下の速度(以下、堆積レートともいう)で堆積する(ステップS110)。
この場合の窒化物半導体を含む結晶は、下地層7となるノンドープGaN層を含む。
すなわち、バッファ層6の上で行われる結晶成長の際の温度(基板5の温度)は、例えば800℃以上である。
発明者は、凹凸5pとして、直径が3μmで、高さが1μmの円柱状の凸部5tが、5μmの配設ピッチで複数設けられたサファイアの基板5の主面5a上に、バッファ層6の堆積条件を変えて堆積させ、そのバッファ層6の上に形成された窒化物半導体の結晶のピットを調べた。
なお、このようにして形成して堆積されるバッファ層6は、多結晶である。
すなわち、図5(a)及び図5(b)は、比較例である条件219a(堆積レートRtが0.20μm/h)及び条件219b(堆積レートRtが0.25μm/h)で成長された結晶を微分干渉顕微鏡で観察したときのピット91の発生状態を例示している。
一方、図5(b)に表したように、堆積レートRtが0.25μm/hの時は、ピット91は、基板5の凹凸5pの凸部5tの上面や凹部5bの底面においても発生する。
なお、ピット91は六角形の境界を有している。
すなわち、図6(a)及び図6(b)は、バッファ層6の形成条件と、窒化物半導体の結晶の結晶性との関係を測定した結果を示している。図6(a)及び図6(b)の縦軸は、結晶のX線回折ロッキングカーブの半値幅WRC−FWHMを示している。そして、図6(a)の横軸は、バッファ層6の堆積レートRtを示し、図6(b)の横軸は、バッファ層6の平均の厚さTを示している。これらの図においては、GaN層(0002)対称面における半値幅WRC−FWHMが四角印によって示され、(10−11)非対称面における半値幅WRC−FWHMが丸印によって示されている。
以下、実施形態に係る結晶成長方法が、半導体発光素子110の作製に応用される実施例について説明する。
まず、キャリアガスを窒素のみに切り替え、アンモニアガスを30slm、TMGガスを8sccmで導入し、GaN障壁層を5nmの厚さで形成した。そして、TMIガスを30sccmの流量でさらに供給し、InGaN量子井戸を2.5nmの厚さで形成した。上記のGaN障壁層の形成と、InGaN量子井戸層の形成と、を交互にさらに7回繰り返して実施して、最後のInGaN量子井戸層の形成の後に、GaNキャップ層を5nmの厚さで形成した。これにより、多重量子井戸構造を有する発光部30が形成された。
これにより、半導体発光素子110が得られる。
なお、堆積レートRtを0.2μm/hとし、厚さ20nmのバッファ層6を形成し、他の構成を上記の実施例と同様とした比較例においては、窒化物半導体の結晶において、ピット91が発生し、表面モフォロジーが悪かった。このような方法で製造された比較例の半導体発光素子のI−V特性においては、低電流領域にてリークが発生し、良好なオーミック接触が得られなかった。また、電流が20mAの時の動作電圧は、3.3V〜3.5Vであり、光出力は12mWであった。
また、各具体例のいずれか2つ以上の要素を技術的に可能な範囲で組み合わせたものも、本発明の要旨を包含する限り本発明の範囲に含まれる。
Claims (6)
- 凹凸が設けられた主面を有する基板の前記主面に窒化物半導体の結晶を成長させる結晶成長方法であって、
前記主面に、GaxAl1−xN(0.1≦x<0.5)を含み、厚さが20ナノメートル以上50ナノメートル以下のバッファ層を、0.1マイクロメートル/時以下の速度で堆積し、
前記バッファ層の上に、前記バッファ層の堆積における前記基板の温度よりも高い温度で、窒化物半導体を含む結晶を成長させることを特徴とする結晶成長方法。 - 前記バッファ層の堆積は、分圧が0.00025以下のトリメチルガリウムガスを用いることを含むことを特徴とする請求項1記載の結晶成長方法。
- 前記バッファ層は、多結晶であることを特徴とする請求項1または2に記載の結晶成長方法。
- 前記バッファ層の堆積における前記基板の前記温度は、600℃以下であり、
前記窒化物半導体を含む前記結晶の成長における前記基板の温度は、800℃以上であることを特徴とする請求項1〜3のいずれか1つに記載の結晶成長方法。 - 前記基板は、サファイア基板であることを特徴とする請求項1〜4のいずれか1つに記載の結晶成長方法。
- 前記窒化物半導体を含む結晶の成長は、前記バッファ層の上にノンドープGaN層を形成し、前記ノンドープGaN層の上にSiを含有するGaN層を形成することを含むことを特徴とする請求項1〜5のいずれか1つに記載の結晶成長方法。
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Cited By (3)
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JP2013128103A (ja) * | 2011-11-17 | 2013-06-27 | Sanken Electric Co Ltd | 窒化物半導体装置及び窒化物半導体装置の製造方法 |
US9812607B2 (en) | 2014-09-17 | 2017-11-07 | Sumitomo Chemical Company, Limited | Method for manufacturing nitride semiconductor template |
US10062807B2 (en) | 2014-09-17 | 2018-08-28 | Sumitomo Chemical Company, Limited | Method for manufacturing nitride semiconductor template |
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WO2011145283A1 (ja) * | 2010-05-20 | 2011-11-24 | パナソニック株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
DE102010036180A1 (de) * | 2010-09-02 | 2012-03-08 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
KR20140100115A (ko) * | 2013-02-05 | 2014-08-14 | 삼성전자주식회사 | 반도체 발광 소자 |
JP6048233B2 (ja) * | 2013-03-12 | 2016-12-21 | 豊田合成株式会社 | Iii 族窒化物半導体発光素子 |
JP2015056647A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 窒化物半導体発光装置 |
JP5957771B2 (ja) * | 2013-10-11 | 2016-07-27 | パナソニックIpマネジメント株式会社 | 窒化物半導体積層構造、半導体発光素子および窒化物半導体積層構造を製造する方法 |
WO2018180724A1 (ja) * | 2017-03-28 | 2018-10-04 | 東芝マテリアル株式会社 | 半導体発光素子 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009283620A (ja) * | 2008-05-21 | 2009-12-03 | Showa Denko Kk | Iii族窒化物半導体発光素子及びその製造方法、並びにランプ |
JP2010010363A (ja) * | 2008-06-26 | 2010-01-14 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体の製造方法 |
JP2011077265A (ja) * | 2009-09-30 | 2011-04-14 | Toyoda Gosei Co Ltd | Iii族窒化物半導体の製造方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5024967A (en) | 1989-06-30 | 1991-06-18 | At&T Bell Laboratories | Doping procedures for semiconductor devices |
JPH08259385A (ja) | 1995-03-27 | 1996-10-08 | Sumitomo Electric Ind Ltd | エピタキシャルウェハおよびその製造方法 |
US6472300B2 (en) * | 1997-11-18 | 2002-10-29 | Technologies And Devices International, Inc. | Method for growing p-n homojunction-based structures utilizing HVPE techniques |
JP3592553B2 (ja) | 1998-10-15 | 2004-11-24 | 株式会社東芝 | 窒化ガリウム系半導体装置 |
JP3472714B2 (ja) | 1999-01-25 | 2003-12-02 | シャープ株式会社 | 半導体発光素子の製造方法 |
JP2002075880A (ja) * | 2000-09-01 | 2002-03-15 | Sanyo Electric Co Ltd | 窒化物系半導体層の形成方法および窒化物系半導体素子の製造方法 |
JP2002190621A (ja) * | 2000-10-12 | 2002-07-05 | Sharp Corp | 半導体発光素子およびその製造方法 |
JP3595277B2 (ja) | 2001-03-21 | 2004-12-02 | 三菱電線工業株式会社 | GaN系半導体発光ダイオード |
JP3898575B2 (ja) | 2002-06-12 | 2007-03-28 | ソニー株式会社 | GaInN層の成膜方法 |
US7683386B2 (en) * | 2003-08-19 | 2010-03-23 | Nichia Corporation | Semiconductor light emitting device with protrusions to improve external efficiency and crystal growth |
JP4396816B2 (ja) * | 2003-10-17 | 2010-01-13 | 日立電線株式会社 | Iii族窒化物半導体基板およびその製造方法 |
JP4652888B2 (ja) | 2004-05-27 | 2011-03-16 | 昭和電工株式会社 | 窒化ガリウム系半導体積層構造体の製造方法 |
US20080048194A1 (en) * | 2004-06-14 | 2008-02-28 | Hiromitsu Kudo | Nitride Semiconductor Light-Emitting Device |
JP2006278616A (ja) | 2005-03-29 | 2006-10-12 | Furukawa Electric Co Ltd:The | 薄膜製造装置、薄膜の製造方法、および薄膜積層体 |
JP4963816B2 (ja) * | 2005-04-21 | 2012-06-27 | シャープ株式会社 | 窒化物系半導体素子の製造方法および発光素子 |
JP4888857B2 (ja) | 2006-03-20 | 2012-02-29 | 国立大学法人徳島大学 | Iii族窒化物半導体薄膜およびiii族窒化物半導体発光素子 |
JP4908381B2 (ja) | 2006-12-22 | 2012-04-04 | 昭和電工株式会社 | Iii族窒化物半導体層の製造方法、及びiii族窒化物半導体発光素子、並びにランプ |
WO2008117627A1 (ja) | 2007-03-26 | 2008-10-02 | Tokyo University Of Agriculture And Technology Tlo Co., Ltd | シリコン基板上におけるAlGaN結晶成長方法 |
JP2008270689A (ja) | 2007-04-25 | 2008-11-06 | Mitsubishi Chemicals Corp | GaN系発光ダイオード素子及びその製造方法 |
JP5777196B2 (ja) * | 2009-04-22 | 2015-09-09 | パナソニック株式会社 | 窒化物半導体発光素子の製造方法 |
-
2010
- 2010-02-24 JP JP2010039174A patent/JP4865047B2/ja active Active
- 2010-09-03 US US12/875,560 patent/US8658450B2/en active Active
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009283620A (ja) * | 2008-05-21 | 2009-12-03 | Showa Denko Kk | Iii族窒化物半導体発光素子及びその製造方法、並びにランプ |
JP2010010363A (ja) * | 2008-06-26 | 2010-01-14 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体の製造方法 |
JP2011077265A (ja) * | 2009-09-30 | 2011-04-14 | Toyoda Gosei Co Ltd | Iii族窒化物半導体の製造方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013128103A (ja) * | 2011-11-17 | 2013-06-27 | Sanken Electric Co Ltd | 窒化物半導体装置及び窒化物半導体装置の製造方法 |
US9812607B2 (en) | 2014-09-17 | 2017-11-07 | Sumitomo Chemical Company, Limited | Method for manufacturing nitride semiconductor template |
US10062807B2 (en) | 2014-09-17 | 2018-08-28 | Sumitomo Chemical Company, Limited | Method for manufacturing nitride semiconductor template |
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