WO2008117627A1 - シリコン基板上におけるＡｌＧａＮ結晶成長方法 - Google Patents

シリコン基板上におけるＡｌＧａＮ結晶成長方法 Download PDF

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Publication number
WO2008117627A1
WO2008117627A1 PCT/JP2008/053631 JP2008053631W WO2008117627A1 WO 2008117627 A1 WO2008117627 A1 WO 2008117627A1 JP 2008053631 W JP2008053631 W JP 2008053631W WO 2008117627 A1 WO2008117627 A1 WO 2008117627A1
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Prior art keywords
silicon substrate
algan
hydrogen
crystal
algan crystal
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PCT/JP2008/053631
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English (en)
French (fr)
Inventor
Akinori Koukitu
Yoshinao Kumagai
Hisashi Murakami
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Tokyo University Of Agriculture And Technology Tlo Co., Ltd
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Application filed by Tokyo University Of Agriculture And Technology Tlo Co., Ltd filed Critical Tokyo University Of Agriculture And Technology Tlo Co., Ltd
Priority to JP2008512629A priority Critical patent/JPWO2008117627A1/ja
Publication of WO2008117627A1 publication Critical patent/WO2008117627A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　煩雑な処理をすることなく、シリコン基板上に高品質なＡｌＧａＮの結晶の成長を行う方法を提供する。 　シリコン基板１０２４の表面は、水素で終端されている。まず、<>７００°C以上、</>例えば９５０°C程度で加熱し、水素を脱離する。キャリアガスを水素から窒素に変えた後、ＡｌＧａＮの結晶成長温度まで上昇させる。同時に原料ガスも導入する。このようにして、ＡｌＧａＮをエピタキシャル成長させる。水素を脱離してからＡｌＧａＮの結晶成長を行ったので、より高品質なＡｌＧａＮ結晶を得ることができる。
PCT/JP2008/053631 2007-03-26 2008-02-29 シリコン基板上におけるＡｌＧａＮ結晶成長方法 WO2008117627A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008512629A JPWO2008117627A1 (ja) 2007-03-26 2008-02-29 シリコン基板上におけるＡｌＧａＮ結晶成長方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007078761 2007-03-26
JP2007-078761 2007-03-26

Publications (1)

Publication Number Publication Date
WO2008117627A1 true WO2008117627A1 (ja) 2008-10-02

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ID=39788365

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053631 WO2008117627A1 (ja) 2007-03-26 2008-02-29 シリコン基板上におけるＡｌＧａＮ結晶成長方法

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JP (1) JPWO2008117627A1 (ja)
WO (1) WO2008117627A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012039151A (ja) * 2011-11-08 2012-02-23 Toshiba Corp 半導体発光素子の製造方法
US8658450B2 (en) 2010-02-24 2014-02-25 Kabushiki Kaisha Toshiba Crystal growth method and semiconductor light emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005298291A (ja) * 2004-04-14 2005-10-27 Toyoda Gosei Co Ltd 半導体バルク結晶の製造方法
JP2006261476A (ja) * 2005-03-18 2006-09-28 Nokodai Tlo Kk Ｓｉ基板結晶上における窒化ガリウム結晶成長方法
JP2006278616A (ja) * 2005-03-29 2006-10-12 Furukawa Electric Co Ltd:The 薄膜製造装置、薄膜の製造方法、および薄膜積層体

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2663583B2 (ja) * 1988-11-24 1997-10-15 日本電気株式会社 シリコン基板上のヘテロエピタキシャル膜の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005298291A (ja) * 2004-04-14 2005-10-27 Toyoda Gosei Co Ltd 半導体バルク結晶の製造方法
JP2006261476A (ja) * 2005-03-18 2006-09-28 Nokodai Tlo Kk Ｓｉ基板結晶上における窒化ガリウム結晶成長方法
JP2006278616A (ja) * 2005-03-29 2006-10-12 Furukawa Electric Co Ltd:The 薄膜製造装置、薄膜の製造方法、および薄膜積層体

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8658450B2 (en) 2010-02-24 2014-02-25 Kabushiki Kaisha Toshiba Crystal growth method and semiconductor light emitting device
US9246055B2 (en) 2010-02-24 2016-01-26 Kabushiki Kaisha Toshiba Crystal growth method and semiconductor light emitting device
JP2012039151A (ja) * 2011-11-08 2012-02-23 Toshiba Corp 半導体発光素子の製造方法

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JPWO2008117627A1 (ja) 2010-07-15

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