JP2011129929A - 電界効果トランジスタの金属ゲート構造 - Google Patents
電界効果トランジスタの金属ゲート構造 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 50
- 239000002184 metal Substances 0.000 title claims abstract description 50
- 230000005669 field effect Effects 0.000 title claims abstract description 21
- 239000007769 metal material Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000010410 layer Substances 0.000 description 78
- 238000000034 method Methods 0.000 description 63
- 239000004065 semiconductor Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- -1 transition metal nitride Chemical class 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910010038 TiAl Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- 150000004645 aluminates Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- ZQXQADNTSSMHJI-UHFFFAOYSA-N hafnium(4+) oxygen(2-) tantalum(5+) Chemical compound [O-2].[Ta+5].[Hf+4] ZQXQADNTSSMHJI-UHFFFAOYSA-N 0.000 description 1
- KQHQLIAOAVMAOW-UHFFFAOYSA-N hafnium(4+) oxygen(2-) zirconium(4+) Chemical compound [O--].[O--].[O--].[O--].[Zr+4].[Hf+4] KQHQLIAOAVMAOW-UHFFFAOYSA-N 0.000 description 1
- KUVFGOLWQIXGBP-UHFFFAOYSA-N hafnium(4+);oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[Ti+4].[Hf+4] KUVFGOLWQIXGBP-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910000326 transition metal silicate Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
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- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
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- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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Abstract
【解決手段】本発明は、集積回路製造に関するものであって、特に、低抵抗の金属ゲート電極を有する電界効果トランジスタに関するものである。電界効果トランジスタのゲート電極の例は、凹部326aを有し、かつ、第一抵抗を有する第一金属材料からなる下側部分326と、突起328aを有し、かつ、第二抵抗を有する第二金属材料からなる上側部分328とからなり、突起が凹部に延伸し、第二抵抗は第一抵抗より小さい材料で形成される。
【選択図】図3H
Description
102 基板
103 アクティブ領域
104 絶縁領域
106 ソース/ドレイン領域
108 低濃度ドープ領域
110 ゲートスペーサ
112 コンタクトエッチ停止層
114 ILD層
120 ゲート構造
120a 多層金属ゲート電極
122 界面層
124 ゲート誘電層
126 下側部分
128 上側部分
200 方法
202、204、206、208、210、212、214、216 ステップ
300 電界効果トランジスタ
302 半導体基板
303 アクティブ領域
304 絶縁領域
306 ソース/ドレイン領域
308 低濃度ドープソース/ドレイン領域
310 ゲートスペーサ
312 コンタクトエッチ停止層
314 ILD層
320 ゲート構造
320a 修正されたゲート電極
322 界面層
324 ゲート誘電層
325 トレンチ
326 第一金属材料
326a 第一金属材料の第一凹部
326b 第一金属材料の第二凹部
326c 下側部分の最大高さ
327 犠牲層
328 第二金属材料
328a 第二金属材料の突起
328b金属ストリップ
328c 上側部分の最低高さ
Claims (10)
- 電界効果トランジスタのゲート電極であって、
凹部を有し、かつ、第一抵抗を有する第一金属材料からなる下側部分と、
突起を有し、かつ、第二抵抗を有する第二金属材料からなる上側部分と、
を具備し、
前記突起が前記凹部に延伸し、前記第二抵抗は前記第一抵抗より小さいことを特徴とするゲート電極。 - 前記下側部分はほぼU型であることを特徴とする請求項1記載のゲート電極。
- 前記第一金属材料は、仕事関数が大きい金属を含む積層構造からなることを特徴とする請求項1記載のゲート電極。
- 前記上側部分はほぼT型であることを特徴とする請求項1記載のゲート電極。
- 電界効果トランジスタであって、
アクティブ領域を有する基板と、
前記基板のアクティブ領域上に位置し、ゲート誘電体とゲート電極とを有するゲート構造を具備し、
前記ゲート電極は、凹部を有し、かつ、第一抵抗を有する第一金属材料からなる下側部分と、突起を有し、かつ、第二抵抗を有する第二金属材料からなる上側部分とを備え、前記突起は前記凹部に延伸し、前記第一金属材料および第二金属材料は、前記第二抵抗が前記第一抵抗より小さい材料で形成され、
前記ゲート構造の反対側の前記アクティブ領域の両端部にソース領域とドレイン領域とが形成され
ていることを特徴とする電界効果トランジスタ。 - 前記下側部分はほぼU型であることを特徴とする請求項5記載の電界効果トランジスタ。
- 前記第一金属材料は、仕事関数が大きい金属を含む積層構造からなることを特徴とする請求項5記載の電界効果トランジスタ。
- 前記上側部分はほぼT型であることを特徴とする請求項5記載の電界効果トランジスタ。
- 前記第二金属材料は、Al、Cu、Co、およびWの群から選択されることを特徴とする請求項5記載の電界効果トランジスタ。
- 前記ゲート誘電体は、高誘電率誘電層からなることを特徴とする請求項5記載の電界効果トランジスタ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/643,414 | 2009-12-21 | ||
US12/643,414 US8779530B2 (en) | 2009-12-21 | 2009-12-21 | Metal gate structure of a field effect transistor |
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Publication Number | Publication Date |
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JP2011129929A true JP2011129929A (ja) | 2011-06-30 |
JP5503517B2 JP5503517B2 (ja) | 2014-05-28 |
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JP2010281727A Active JP5503517B2 (ja) | 2009-12-21 | 2010-12-17 | 電界効果トランジスタの製造方法 |
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US (3) | US8779530B2 (ja) |
JP (1) | JP5503517B2 (ja) |
KR (1) | KR101218479B1 (ja) |
CN (2) | CN105244284A (ja) |
TW (1) | TWI437708B (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160021266A (ko) * | 2013-06-19 | 2016-02-24 | 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. | 대체 금속 게이트 트랜지스터 |
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TWI437708B (zh) | 2014-05-11 |
US8779530B2 (en) | 2014-07-15 |
US9129953B2 (en) | 2015-09-08 |
CN102104061A (zh) | 2011-06-22 |
KR101218479B1 (ko) | 2013-01-18 |
JP5503517B2 (ja) | 2014-05-28 |
US20150357435A1 (en) | 2015-12-10 |
CN105244284A (zh) | 2016-01-13 |
US20140295659A1 (en) | 2014-10-02 |
KR20110073214A (ko) | 2011-06-29 |
TW201123448A (en) | 2011-07-01 |
US9431505B2 (en) | 2016-08-30 |
US20110147858A1 (en) | 2011-06-23 |
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