JP2011119310A - エッチングガス - Google Patents
エッチングガス Download PDFInfo
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- JP2011119310A JP2011119310A JP2009273031A JP2009273031A JP2011119310A JP 2011119310 A JP2011119310 A JP 2011119310A JP 2009273031 A JP2009273031 A JP 2009273031A JP 2009273031 A JP2009273031 A JP 2009273031A JP 2011119310 A JP2011119310 A JP 2011119310A
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- 238000005530 etching Methods 0.000 title claims abstract description 95
- 229910002091 carbon monoxide Inorganic materials 0.000 claims abstract description 10
- 229910052786 argon Inorganic materials 0.000 claims abstract description 8
- 239000000654 additive Substances 0.000 claims abstract description 7
- 230000000996 additive effect Effects 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000004380 ashing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 53
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000006227 byproduct Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- CCGKOQOJPYTBIH-UHFFFAOYSA-N ketene group Chemical group C=C=O CCGKOQOJPYTBIH-UHFFFAOYSA-N 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
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- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000010792 warming Methods 0.000 description 3
- YQQHEHMVPLLOKE-UHFFFAOYSA-N 1,1,2,2-tetrafluoro-1-methoxyethane Chemical compound COC(F)(F)C(F)F YQQHEHMVPLLOKE-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 150000002500 ions Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- CRLSHTZUJTXOEL-UHFFFAOYSA-N 2,2-difluoroacetyl fluoride Chemical compound FC(F)C(F)=O CRLSHTZUJTXOEL-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920006926 PFC Polymers 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- -1 WSix Chemical compound 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000003421 catalytic decomposition reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001784 detoxification Methods 0.000 description 1
- PBWZKZYHONABLN-UHFFFAOYSA-N difluoroacetic acid Chemical compound OC(=O)C(F)F PBWZKZYHONABLN-UHFFFAOYSA-N 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C19/00—Acyclic saturated compounds containing halogen atoms
- C07C19/08—Acyclic saturated compounds containing halogen atoms containing fluorine
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C53/00—Saturated compounds having only one carboxyl group bound to an acyclic carbon atom or hydrogen
- C07C53/38—Acyl halides
- C07C53/46—Acyl halides containing halogen outside the carbonyl halide group
- C07C53/48—Halogenated acetyl halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/12—Gaseous compositions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
本発明は、対レジスト選択比や加工形状のエッチング性能に優れるだけでなく、入手が容易で、環境に負荷をかけるCF4を実質的に副生しない新規なエッチングガスを提供する。
【解決手段】
CHF2COFを含んでなるエッチングガスであって、O2、O3、CO、CO2、F2、NF3、Cl2、Br2、I2、XFn(式中、XはCl、IまたはBrを表し、nは1≦n≦5の整数を表す。)、CH4、CH3F、CH2F2、CHF3、N2、He、Ar、Ne、Krなど、または、CH4、C2H2,C2H4,C2H6、C3H4、C3H6、C3H8、HI、HBr、HCl、CO、NO、NH3、H2など、または、CH4、CH3F、CH2F2、CHF3の中から選ばれた少なくとも1種のガスを添加物として含むエッチングガス。
【選択図】 図1
Description
[発明1]
半導体、誘電体または金属からなる薄膜をエッチングする用に供する、CHF2COFを含むエッチングガス。
[発明2]半導体または誘電体が、シリコン含有物質である発明1のエッチングガス。
[発明3]エッチングガスが、O2、O3、CO、CO2、F2、NF3、Cl2、Br2、I2、XFn(式中、XはCl、IまたはBrを表し、nは1≦n≦5の整数を表す。)、CH4、CH3F、CH2F2、CHF3、N2、He、Ar、Ne、Krの中から選ばれた少なくとも1種のガスを添加物として含む発明1または2のエッチングガス。
[発明4]エッチングガスが、CH4、C2H2,C2H4,C2H6、C3H4、C3H6、C3H8、HI、HBr、HCl、CO、NO、NH3、H2、N2、He、Ar、Ne、Krの中から選ばれた少なくとも1種のガスを添加物として含む発明1または2のエッチングガス。
[発明5]エッチングガスが、CH4、CH3F、CH2F2、CHF3の中から選ばれた少なくとも1種のガスを添加物として含む発明1〜3のエッチングガス。
[発明6]発明1〜4のエッチングガスを用いる半導体膜、誘電体膜または金属膜のエッチング方法。
[発明7]発明5のエッチング方法を施し、次いで、F2またはO2によりアッシングすることを含むエッチング方法。
CHF2COFは、洗浄剤、発泡剤等として使用されているHFE−254pc(CHF2CF2OMe)やHFE−374pc−f(CHF2CF2OEt)等のCHF2CF2OR(RはMe,Et,n−Pr,iso−Pr,n−Bu,sec−Bu,iso−Bu,tert−Bu等のアルキル基アルキル基)の1−アルコキシ−1,1,2,2−テトラフルオロエタンを接触分解することによって容易かつ定量的に合成可能である。また、HFE−254pcやHFE−374pc−fは、工業的に大量生産されているテトラフルオロエチレンにメタノールやエタノールを付加することで合成できるので、非常に入手の容易な化合物である。
実施例1〜3、比較例1、2
本発明のエッチングガスをコンタクトホール加工に使用し、層間絶縁膜(SiO2)をエッチングした例を示す。
2 アース
3 高周波電源
4 第一ガス導入口
5 第二ガス導入口
6 第三ガス導入口
7 サファイア管
8 誘導コイル
9 電子式圧力計
10 排気ガスライン
11 試料ホルダ
12 試料
21 シリコンウエハ
22 SiO2層間絶縁膜
23 レジスト・マスク
24 肩落ち部
Claims (7)
- 半導体、誘電体または金属からなる薄膜をエッチングする用に供する、CHF2COFを含むエッチングガス。
- 半導体または誘電体が、シリコン含有物質である請求項1に記載のエッチングガス。
- エッチングガスが、O2、O3、CO、CO2、F2、NF3、Cl2、Br2、I2、XFn(式中、XはCl、IまたはBrを表し、nは1≦n≦5の整数を表す。)、CH4、CH3F、CH2F2、CHF3、N2、He、Ar、Ne、Krの中から選ばれた少なくとも1種のガスを添加物として含む請求項1または2に記載のエッチングガス。
- エッチングガスが、CH4、C2H2,C2H4,C2H6、C3H4、C3H6、C3H8、HI、HBr、HCl、CO、NO、NH3、H2、N2、He、Ar、Ne、Krの中から選ばれた少なくとも1種のガスを添加物として含む請求項1または2に記載のエッチングガス。
- エッチングガスが、CH4、CH3F、CH2F2、CHF3の中から選ばれた少なくとも1種のガスを添加物として含む請求項1〜3のいずれか1項に記載のエッチングガス。
- 請求項1〜4のいずれか1項に記載のエッチングガスを用いる半導体膜、誘電体膜または金属膜のエッチング方法。
- 請求項5に記載のエッチング方法を施し、次いで、F2またはO2によりアッシングすることを含むエッチング方法。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009273031A JP5655296B2 (ja) | 2009-12-01 | 2009-12-01 | エッチングガス |
EP10834491.2A EP2508500A4 (en) | 2009-12-01 | 2010-11-19 | ETCHING GAS |
KR1020127014442A KR101391347B1 (ko) | 2009-12-01 | 2010-11-19 | 에칭 가스 |
PCT/JP2010/070656 WO2011068039A1 (ja) | 2009-12-01 | 2010-11-19 | エッチングガス |
US13/513,038 US20120231630A1 (en) | 2009-12-01 | 2010-11-19 | Etching Gas |
CN2010800546650A CN102648171A (zh) | 2009-12-01 | 2010-11-19 | 蚀刻气体 |
TW099140845A TWI431686B (zh) | 2009-12-01 | 2010-11-25 | Etching gas |
US14/455,128 US9234133B2 (en) | 2009-12-01 | 2014-08-08 | Etching gas |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009273031A JP5655296B2 (ja) | 2009-12-01 | 2009-12-01 | エッチングガス |
Publications (2)
Publication Number | Publication Date |
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JP2011119310A true JP2011119310A (ja) | 2011-06-16 |
JP5655296B2 JP5655296B2 (ja) | 2015-01-21 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009273031A Expired - Fee Related JP5655296B2 (ja) | 2009-12-01 | 2009-12-01 | エッチングガス |
Country Status (7)
Country | Link |
---|---|
US (2) | US20120231630A1 (ja) |
EP (1) | EP2508500A4 (ja) |
JP (1) | JP5655296B2 (ja) |
KR (1) | KR101391347B1 (ja) |
CN (1) | CN102648171A (ja) |
TW (1) | TWI431686B (ja) |
WO (1) | WO2011068039A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3070736A1 (en) | 2015-03-20 | 2016-09-21 | Renesas Electronics Corporation | Manufacturing method of semiconductor device |
KR20160112928A (ko) | 2015-03-20 | 2016-09-28 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 장치의 제조 방법 |
WO2019054490A1 (ja) * | 2017-09-15 | 2019-03-21 | 関東電化工業株式会社 | 酸ハロゲン化物を用いた原子層エッチング |
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Also Published As
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US20140349488A1 (en) | 2014-11-27 |
KR20120078749A (ko) | 2012-07-10 |
EP2508500A1 (en) | 2012-10-10 |
JP5655296B2 (ja) | 2015-01-21 |
WO2011068039A1 (ja) | 2011-06-09 |
US9234133B2 (en) | 2016-01-12 |
KR101391347B1 (ko) | 2014-05-07 |
TW201140685A (en) | 2011-11-16 |
CN102648171A (zh) | 2012-08-22 |
TWI431686B (zh) | 2014-03-21 |
US20120231630A1 (en) | 2012-09-13 |
EP2508500A4 (en) | 2013-05-15 |
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