JP6140412B2 - ガス供給方法及びプラズマ処理装置 - Google Patents
ガス供給方法及びプラズマ処理装置 Download PDFInfo
- Publication number
- JP6140412B2 JP6140412B2 JP2012208730A JP2012208730A JP6140412B2 JP 6140412 B2 JP6140412 B2 JP 6140412B2 JP 2012208730 A JP2012208730 A JP 2012208730A JP 2012208730 A JP2012208730 A JP 2012208730A JP 6140412 B2 JP6140412 B2 JP 6140412B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- processed
- chamber
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 93
- 238000005530 etching Methods 0.000 claims description 134
- 239000000654 additive Substances 0.000 claims description 69
- 230000000996 additive effect Effects 0.000 claims description 69
- 230000008021 deposition Effects 0.000 claims description 42
- 230000002093 peripheral effect Effects 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 25
- 238000000638 solvent extraction Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 description 491
- 239000010408 film Substances 0.000 description 103
- 238000000151 deposition Methods 0.000 description 38
- 238000010586 diagram Methods 0.000 description 26
- 238000003860 storage Methods 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 13
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 7
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
110 処理室
250 添加ガス供給部
252,254,256,258 ガス源
262,264,266,268 流量調整バルブ
282a〜282e 開閉バルブ
300 上部電極
302 内側上部電極(ガス導入部)
332a〜332e ガス室
400 制御部
Claims (10)
- 処理室内にプラズマ処理に用いられる処理ガスを導入するガス導入部を区画して得られた複数のガス室のうち添加ガスが供給されるガス室と前記添加ガスの種別との組合せを被処理膜の種別に応じて複数準備する準備工程と、
被処理膜が形成された基板が処理室内に配置される配置工程と、
前記基板の被処理膜の種別を識別する識別工程と、
前記準備された複数の組合せから、前記識別された前記被処理膜の種別に対応する組合せを選択する選択工程と、
前記選択工程によって選択された前記組合せに基づいて、前記ガス室に対して前記添加ガスを供給する添加ガス供給工程と
を含むことを特徴とするガス供給方法。 - 前記選択工程は、前記被処理膜の種別が有機膜を示す場合には、前記複数のガス室のうち前記基板の中央部に対応する位置に配置されたガス室に対して前記添加ガスとしての第1のエッチングガスを供給する前記組合せを選択することを特徴とする請求項1に記載のガス供給方法。
- 前記選択工程は、前記被処理膜の種別が有機膜を示す場合には、前記複数のガス室のうち前記基板の周縁部よりも外側の位置に対応する位置に配置されたガス室に対して前記添加ガスとしての第1の堆積ガスを供給する前記組合せを選択することを特徴とする請求項1又は2に記載のガス供給方法。
- 前記選択工程は、前記被処理膜の種別がシリコン膜を示す場合には、前記複数のガス室のうち前記基板の中央部に対応する位置に配置されたガス室に対して前記添加ガスとしての第2のエッチングガスを供給する前記組合せを選択することを特徴とする請求項1〜3のいずれか一つに記載のガス供給方法。
- 前記選択工程は、前記被処理膜の種別がシリコン膜を示す場合には、前記複数のガス室のうち前記基板の周縁部よりも外側の位置に対応する位置に配置されたガス室に対して前記添加ガスとしての第2の堆積ガスを供給する前記組合せを選択することを特徴とする請求項1〜4のいずれか一つに記載のガス供給方法。
- 前記第1のエッチングガスは、O2ガスであることを特徴とする請求項2に記載のガス供給方法。
- 前記第1の堆積ガスは、CF系ガス及びCOSガスのうち少なくともいずれか一つのガスであることを特徴とする請求項3に記載のガス供給方法。
- 前記第2のエッチングガスは、HBrガス、NF3ガス及びCl2ガスのうち少なくともいずれか一つのガスであることを特徴とする請求項4に記載のガス供給方法。
- 前記第2の堆積ガスは、O2ガスであることを特徴とする請求項5に記載のガス供給方法。
- 被処理膜が形成された基板が配置される処理室と、
前記処理室内にプラズマ処理に用いられる処理ガスを導入するガス導入部と、
前記ガス導入部を区画して得られた複数のガス室に対して添加ガスを供給する添加ガス供給部と、
前記複数のガス室のうち添加ガスが供給されるガス室と前記添加ガスの種別との組合せを被処理膜の種別に応じて複数準備する準備工程と、被処理膜が形成された基板が処理室内に配置される配置工程と、前記基板の被処理膜の種別を識別する識別工程と、前記準備された複数の組合せから、前記識別された前記被処理膜の種別に対応する組合せを選択する選択工程と、前記選択工程によって選択された前記組合せに基づいて、前記ガス室に対して前記添加ガスを供給する添加ガス供給工程とを実行する制御部と
を備えることを特徴とするプラズマ処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012208730A JP6140412B2 (ja) | 2012-09-21 | 2012-09-21 | ガス供給方法及びプラズマ処理装置 |
KR1020157004334A KR102132045B1 (ko) | 2012-09-21 | 2013-09-10 | 가스 공급 방법 및 플라즈마 처리 장치 |
PCT/JP2013/074375 WO2014045938A1 (ja) | 2012-09-21 | 2013-09-10 | ガス供給方法及びプラズマ処理装置 |
US14/422,329 US20150228457A1 (en) | 2012-09-21 | 2013-09-10 | Gas supply method and plasma processing apparatus |
TW102133767A TWI608515B (zh) | 2012-09-21 | 2013-09-18 | Gas supply method and plasma processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012208730A JP6140412B2 (ja) | 2012-09-21 | 2012-09-21 | ガス供給方法及びプラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014063918A JP2014063918A (ja) | 2014-04-10 |
JP6140412B2 true JP6140412B2 (ja) | 2017-05-31 |
Family
ID=50341252
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012208730A Expired - Fee Related JP6140412B2 (ja) | 2012-09-21 | 2012-09-21 | ガス供給方法及びプラズマ処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20150228457A1 (ja) |
JP (1) | JP6140412B2 (ja) |
KR (1) | KR102132045B1 (ja) |
TW (1) | TWI608515B (ja) |
WO (1) | WO2014045938A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107424901B (zh) * | 2013-03-12 | 2019-06-11 | 应用材料公司 | 具有方位角与径向分布控制的多区域气体注入组件 |
JP6336719B2 (ja) * | 2013-07-16 | 2018-06-06 | 株式会社ディスコ | プラズマエッチング装置 |
US9275869B2 (en) * | 2013-08-02 | 2016-03-01 | Lam Research Corporation | Fast-gas switching for etching |
KR101560623B1 (ko) * | 2014-01-03 | 2015-10-15 | 주식회사 유진테크 | 기판처리장치 및 기판처리방법 |
JP6357436B2 (ja) * | 2014-07-25 | 2018-07-11 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
EP3401949B1 (en) * | 2016-01-06 | 2021-03-24 | Toshiba Mitsubishi-Electric Industrial Systems Corporation | Gas supply device |
KR102096700B1 (ko) * | 2017-03-29 | 2020-04-02 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치 및 기판 처리 방법 |
JP7122102B2 (ja) * | 2017-11-08 | 2022-08-19 | 東京エレクトロン株式会社 | ガス供給システム及びガス供給方法 |
JP7296699B2 (ja) * | 2018-07-02 | 2023-06-23 | 東京エレクトロン株式会社 | ガス供給システム、プラズマ処理装置およびガス供給システムの制御方法 |
JP7169865B2 (ja) * | 2018-12-10 | 2022-11-11 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
KR102518875B1 (ko) * | 2020-09-10 | 2023-04-06 | 주식회사 이루테크놀러지 | 대기압 플라즈마 기판처리장치 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03166389A (ja) * | 1989-11-27 | 1991-07-18 | Hitachi Ltd | エネルギービーム加工方法および同加工装置 |
JPH06310463A (ja) * | 1993-04-23 | 1994-11-04 | Tokyo Electron Ltd | 処理方法 |
US20060191637A1 (en) * | 2001-06-21 | 2006-08-31 | John Zajac | Etching Apparatus and Process with Thickness and Uniformity Control |
US20040040658A1 (en) * | 2002-08-29 | 2004-03-04 | Tatehito Usui | Semiconductor fabricating apparatus and method and apparatus for determining state of semiconductor fabricating process |
JP2005353812A (ja) * | 2004-06-10 | 2005-12-22 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法 |
WO2006033489A1 (en) * | 2004-09-22 | 2006-03-30 | Hantech Co., Ltd. | System for processing semiconductor substrate by using laser and method of the same |
US7718030B2 (en) * | 2005-09-23 | 2010-05-18 | Tokyo Electron Limited | Method and system for controlling radical distribution |
JP4911984B2 (ja) | 2006-02-08 | 2012-04-04 | 東京エレクトロン株式会社 | ガス供給装置,基板処理装置,ガス供給方法及びシャワーヘッド |
US20070254483A1 (en) * | 2006-04-28 | 2007-11-01 | Applied Materials, Inc. | Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformity |
US7431859B2 (en) * | 2006-04-28 | 2008-10-07 | Applied Materials, Inc. | Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation |
US20080110569A1 (en) * | 2006-11-09 | 2008-05-15 | Go Miya | Plasma etching apparatus and plasma etching method |
TW200849325A (en) * | 2007-02-13 | 2008-12-16 | Hitachi High Tech Corp | Plasma processing method and plasma processing apparatus |
US20090275206A1 (en) * | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias |
JP2010034415A (ja) * | 2008-07-30 | 2010-02-12 | Hitachi High-Technologies Corp | プラズマ処理方法 |
US8236700B2 (en) * | 2009-08-17 | 2012-08-07 | Tokyo Electron Limited | Method for patterning an ARC layer using SF6 and a hydrocarbon gas |
JP5655296B2 (ja) * | 2009-12-01 | 2015-01-21 | セントラル硝子株式会社 | エッチングガス |
JP5697389B2 (ja) * | 2010-09-27 | 2015-04-08 | 東京エレクトロン株式会社 | プラズマエッチング用の電極板及びプラズマエッチング処理装置 |
JP5689294B2 (ja) | 2010-11-25 | 2015-03-25 | 東京エレクトロン株式会社 | 処理装置 |
US8809199B2 (en) * | 2011-02-12 | 2014-08-19 | Tokyo Electron Limited | Method of etching features in silicon nitride films |
US8334083B2 (en) * | 2011-03-22 | 2012-12-18 | Tokyo Electron Limited | Etch process for controlling pattern CD and integrity in multi-layer masks |
-
2012
- 2012-09-21 JP JP2012208730A patent/JP6140412B2/ja not_active Expired - Fee Related
-
2013
- 2013-09-10 WO PCT/JP2013/074375 patent/WO2014045938A1/ja active Application Filing
- 2013-09-10 US US14/422,329 patent/US20150228457A1/en not_active Abandoned
- 2013-09-10 KR KR1020157004334A patent/KR102132045B1/ko active IP Right Grant
- 2013-09-18 TW TW102133767A patent/TWI608515B/zh active
Also Published As
Publication number | Publication date |
---|---|
KR102132045B1 (ko) | 2020-07-08 |
TWI608515B (zh) | 2017-12-11 |
WO2014045938A1 (ja) | 2014-03-27 |
US20150228457A1 (en) | 2015-08-13 |
TW201428811A (zh) | 2014-07-16 |
JP2014063918A (ja) | 2014-04-10 |
KR20150056536A (ko) | 2015-05-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6140412B2 (ja) | ガス供給方法及びプラズマ処理装置 | |
KR102418245B1 (ko) | 플라즈마 처리 방법 및 플라즈마 처리 장치 | |
US9721803B2 (en) | Etching method for substrate to be processed and plasma-etching device | |
TWI642104B (zh) | 蝕刻方法及電漿處理裝置 | |
US8641916B2 (en) | Plasma etching apparatus, plasma etching method and storage medium | |
EP3032925B1 (en) | Plasma processing device and plasma processing method | |
KR102099408B1 (ko) | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 | |
KR20210042939A (ko) | 전자빔 매개 플라즈마 에칭 및 증착 공정을 위한 장치 및 공정 | |
US10074800B2 (en) | Method for etching magnetic layer including isopropyl alcohol and carbon dioxide | |
KR101835683B1 (ko) | 다층막을 에칭하는 방법 | |
KR20140092257A (ko) | 플라즈마 처리 방법 및 플라즈마 처리 장치 | |
US9818582B2 (en) | Plasma processing method | |
KR20200051494A (ko) | 배치대, 엣지 링의 위치 결정 방법 및 기판 처리 장치 | |
KR20150021475A (ko) | 실리콘 산화막을 에칭하는 방법 | |
KR20150001664A (ko) | 온도 제어 방법 및 플라즈마 처리 장치 | |
WO2020059596A1 (ja) | 載置台及び基板処理装置 | |
KR102661835B1 (ko) | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 | |
TW202002014A (zh) | 基板處理方法及基板處理裝置 | |
KR102264005B1 (ko) | 플라즈마 처리 장치 | |
TW202044405A (zh) | 清潔處理方法及電漿處理裝置 | |
KR20200051505A (ko) | 배치대 및 기판 처리 장치 | |
JP2021176193A (ja) | 基板処理装置および基板処理装置の制御方法 | |
US20240194500A1 (en) | Substrate processing apparatus and method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150526 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160705 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160901 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161206 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161221 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170404 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170501 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6140412 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |