WO2014045938A1 - ガス供給方法及びプラズマ処理装置 - Google Patents
ガス供給方法及びプラズマ処理装置 Download PDFInfo
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- WO2014045938A1 WO2014045938A1 PCT/JP2013/074375 JP2013074375W WO2014045938A1 WO 2014045938 A1 WO2014045938 A1 WO 2014045938A1 JP 2013074375 W JP2013074375 W JP 2013074375W WO 2014045938 A1 WO2014045938 A1 WO 2014045938A1
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- gas
- chamber
- film
- wafer
- additive
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- 238000000034 method Methods 0.000 title claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000638 solvent extraction Methods 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims description 134
- 239000000654 additive Substances 0.000 claims description 70
- 230000000996 additive effect Effects 0.000 claims description 70
- 230000008021 deposition Effects 0.000 claims description 42
- 230000002093 peripheral effect Effects 0.000 claims description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 26
- 239000010703 silicon Substances 0.000 claims description 26
- 239000007789 gas Substances 0.000 description 491
- 239000010408 film Substances 0.000 description 103
- 238000000151 deposition Methods 0.000 description 38
- 238000010586 diagram Methods 0.000 description 26
- 238000003860 storage Methods 0.000 description 16
- 238000001020 plasma etching Methods 0.000 description 13
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 7
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000001934 delay Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Definitions
- Various aspects and embodiments of the present invention relate to a gas supply method and a plasma processing apparatus.
- plasma processing apparatuses that perform plasma processing for the purpose of thin film deposition or etching are widely used.
- the plasma processing apparatus include a plasma CVD (Chemical Vapor Deposition) apparatus that performs a thin film deposition process and a plasma etching apparatus that performs an etching process.
- CVD Chemical Vapor Deposition
- plasma etching apparatus that performs an etching process.
- a plasma processing apparatus includes a processing chamber in which a substrate on which a target film to be processed is formed is disposed, a shower head which is a gas introduction unit for introducing a processing gas necessary for plasma processing into the processing chamber, and processing A sample stage for installing the substrate in the room is provided.
- the plasma processing apparatus includes a plasma generation mechanism that supplies electromagnetic energy such as microwaves and RF waves in order to turn the processing gas in the processing chamber into plasma.
- Patent Document 1 the inside of a shower head for introducing a processing gas into a processing chamber is divided into a plurality of gas chambers, and a gas chamber corresponding to the central portion of the substrate and a gas chamber corresponding to the peripheral portion of the substrate A technique for individually supplying a processing gas at an arbitrary type or an arbitrary flow rate is disclosed.
- Patent Document 2 discloses a technique for supplying an additive gas to be added to a processing gas as needed.
- the conventional technique has a problem that the uniformity of the surface to be processed of the film to be processed cannot be maintained following the change of the film to be processed that is the target of plasma processing. That is, in the prior art, even if the film to be processed is changed after the type and flow rate of the gas supplied to each gas chamber are once selected, the gas supply is continued at the selected type or flow rate. Therefore, there is a possibility that the uniformity of the processed surface of the processed film after the change cannot be maintained.
- the gas supply method includes a selection step and an additive gas supply step.
- an additive gas is supplied from among a plurality of gas chambers obtained by partitioning a gas introduction portion for introducing a processing gas used for plasma processing into a processing chamber in which a substrate on which a film to be processed is formed is disposed.
- the combination of the gas chamber and the type of the additive gas is selected according to the type of the film to be processed.
- the additive gas supply step the additive gas is supplied to the gas chamber based on the combination selected in the selection step.
- a gas supply method capable of appropriately maintaining the uniformity of the surface to be processed of the film to be processed following the change of the film to be processed that is subject to plasma processing, and A plasma processing apparatus is realized.
- FIG. 1 is a cross-sectional view illustrating a schematic configuration of a plasma processing apparatus according to an embodiment.
- FIG. 2 is a cross-sectional view of the inner upper electrode in the present embodiment.
- FIG. 3 is a block diagram illustrating a configuration example of the control unit in the present embodiment.
- FIG. 4 is a diagram showing an example of the structure of data stored in the storage means in this embodiment.
- FIG. 5 is a flowchart showing a processing procedure of the gas supply method by the plasma processing apparatus according to the present embodiment.
- FIG. 6A is a diagram (part 1) illustrating an etching rate when a wafer is etched without using the gas supply method of the present embodiment.
- FIG. 6B is a diagram (part 1) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- FIG. 6C is a diagram (part 1) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- FIG. 7A is a diagram (part 2) illustrating an etching rate when a wafer is etched without using the gas supply method of the present embodiment.
- FIG. 7B is a diagram (part 2) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- FIG. 8A is a diagram (No. 3) showing an etching rate when a wafer is etched without using the gas supply method of the present embodiment.
- FIG. 8B is a diagram (part 3) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- FIG. 8C is a diagram (part 3) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- FIG. 9A is a diagram (part 4) illustrating an etching rate when a wafer is etched without using the gas supply method of the present embodiment.
- FIG. 9B is a diagram (part 4) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- FIG. 9C is a diagram (part 4) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- FIG. 9A is a diagram (part 4) illustrating an etching rate when a wafer is etched without using the gas supply method of the present embodiment.
- FIG. 9B is a diagram (part 4) illustrating an etching
- FIG. 10A is a diagram (No. 5) showing an etching rate when a wafer is etched without using the gas supply method of the present embodiment.
- FIG. 10B is a diagram (part 5) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- FIG. 10C is a diagram (part 5) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- an additive gas is supplied from among a plurality of gas chambers obtained by partitioning a gas introduction portion for introducing a processing gas used for plasma processing into a processing chamber in which a substrate on which a film to be processed is formed is disposed.
- the selection step is performed in a gas chamber arranged at a position corresponding to the central portion of the substrate among the plurality of gas chambers.
- a combination for supplying the first etching gas as the additive gas is selected.
- the gas supply method is arranged in a position corresponding to a position outside the peripheral edge of the substrate in the plurality of gas chambers when the type of film to be processed indicates an organic film.
- a combination for supplying the first deposition gas as the additive gas to the gas chamber is selected.
- the selection process is performed on a gas chamber disposed at a position corresponding to the central portion of the substrate among the plurality of gas chambers.
- a combination for supplying the second etching gas as the additive gas is selected.
- the gas supply method is arranged in a position corresponding to a position outside the peripheral edge of the substrate in the plurality of gas chambers when the type of film to be processed indicates a silicon film.
- a combination for supplying the second deposition gas as the additive gas to the gas chamber is selected.
- the first etching gas is O 2 gas.
- the first deposition gas is at least one of a CF-based gas and a COS gas.
- the second etching gas is at least one of HBr gas, NF3 gas, and Cl2 gas.
- the second deposition gas is O 2 gas.
- a plasma processing apparatus defines a processing chamber in which a substrate on which a film to be processed is formed is disposed, a gas introducing unit that introduces a processing gas used for plasma processing into the processing chamber, and a gas introducing unit.
- the additive gas supply unit for supplying the additive gas to the plurality of gas chambers obtained in this manner, and the combination of the gas chamber to which the additive gas is supplied among the plurality of gas chambers and the type of the additive gas, And a control unit that supplies the additive gas from the additive gas supply unit to the gas chamber based on the selected combination.
- FIG. 1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus according to an embodiment.
- the plasma processing apparatus according to the present embodiment is applied to a parallel plate type plasma etching apparatus will be described.
- the plasma processing apparatus 100 has a processing chamber 110 constituted by a substantially cylindrical processing container.
- the processing container is made of, for example, an aluminum alloy and is electrically grounded.
- the inner wall surface of the processing vessel is covered with an alumina film or an yttrium oxide film (Y2O3).
- a susceptor 116 constituting a lower electrode that also serves as a mounting table on which a wafer W as a substrate is mounted is disposed.
- the susceptor 116 is supported on a columnar susceptor support 114 provided via an insulating plate 112 at the approximate center of the bottom of the processing chamber 110.
- the susceptor 116 is made of, for example, an aluminum alloy.
- An electrostatic chuck 118 that holds the wafer W is provided on the susceptor 116.
- the electrostatic chuck 118 has an electrode 120 inside.
- a DC power source 122 is electrically connected to the electrode 120.
- the electrostatic chuck 118 can attract the wafer W on its upper surface by a Coulomb force generated when a DC voltage is applied to the electrode 120 from the DC power source 122.
- a focus ring 124 is provided on the upper surface of the susceptor 116 so as to surround the periphery of the electrostatic chuck 118.
- a cylindrical inner wall member 126 made of, for example, quartz is attached to the outer peripheral surfaces of the susceptor 116 and the susceptor support base 114.
- a ring-shaped refrigerant chamber 128 is formed inside the susceptor support 114.
- the refrigerant chamber 128 communicates with a chiller unit (not shown) installed outside the processing chamber 110 via pipes 130a and 130b, for example.
- a refrigerant (refrigerant liquid or cooling water) is circulated and supplied to the refrigerant chamber 128 via the pipes 130a and 130b. Thereby, the temperature of the wafer W on the susceptor 116 can be controlled.
- the gas supply line 132 that passes through the susceptor 116 and the susceptor support 114 is connected to the upper surface of the electrostatic chuck 118.
- a heat transfer gas (backside gas) such as He gas can be supplied between the wafer W and the electrostatic chuck 118 via the gas supply line 132.
- an upper electrode 300 facing the susceptor 116 constituting the lower electrode in parallel.
- a plasma generation space PS is formed between the susceptor 116 and the upper electrode 300.
- the upper electrode 300 includes a disk-shaped inner upper electrode 302 and a ring-shaped outer upper electrode 304 surrounding the outer side of the inner upper electrode 302.
- the inner upper electrode 302 constitutes a shower head that ejects a predetermined gas including a processing gas toward the plasma generation space PS on the wafer W placed on the susceptor 116.
- the inner upper electrode 302 is an example of a gas introduction unit that introduces a processing gas used for plasma processing into the processing chamber 110 in which a substrate on which a processing target film is formed is placed.
- the inner upper electrode 302 includes a circular electrode plate 310 having a large number of gas ejection holes 312 and an electrode support 320 that detachably supports the upper surface side of the electrode plate 310.
- the electrode support 320 is formed in a disk shape having substantially the same diameter as the electrode plate 310. A specific configuration example of the inner upper electrode 302 will be described later.
- a ring-shaped dielectric 306 is interposed between the inner upper electrode 302 and the outer upper electrode 304.
- a ring-shaped insulating shielding member 308 made of alumina, for example, is airtightly interposed between the outer upper electrode 304 and the inner peripheral wall of the processing chamber 110.
- a first high frequency power supply 154 is electrically connected to the outer upper electrode 304 via a power supply tube 152, a connector 150, an upper power supply rod 148, and a matching unit 146.
- the first high frequency power supply 154 can output high frequency power having a frequency of 40 MHz or more (for example, 100 MHz).
- the feeding cylinder 152 is formed in, for example, a substantially cylindrical shape having an open bottom surface, and a lower end portion is connected to the outer upper electrode 304.
- a lower end portion of the upper power supply rod 148 is electrically connected to the center of the upper surface of the power supply tube 152 by a connector 150.
- the upper end of the upper power feed rod 148 is connected to the output side of the matching unit 146.
- the matching unit 146 is connected to the first high-frequency power source 154 and can match the internal impedance of the first high-frequency power source 154 with the load impedance.
- the outer side of the feeding cylinder 152 is covered with a cylindrical ground conductor 111 having a side wall having substantially the same diameter as the processing chamber 110.
- a lower end portion of the ground conductor 111 is connected to an upper portion of the side wall of the processing chamber 110.
- the upper power feed rod 148 described above penetrates the center portion of the upper surface of the ground conductor 111, and an insulating member 156 is interposed at the contact portion between the ground conductor 111 and the upper power feed rod 148.
- FIG. 2 is a cross-sectional view of the inner upper electrode in the present embodiment.
- a buffer chamber 332 formed in a disk shape is formed inside the inner upper electrode 302.
- the inner upper electrode 302 has a plurality of gas chambers 332a to 332e obtained by partitioning the buffer chamber 332 from each other via a partition wall 324.
- a plurality of gas ejection holes 312 for ejecting the processing gas into the processing chamber 110 are formed.
- the gas chamber 332 a is a gas chamber disposed at a position corresponding to the central portion of the wafer W.
- the gas chamber 332b is a gas chamber disposed at a position corresponding to the central portion of the wafer W, and surrounds the periphery of the gas chamber 332a.
- the gas chamber 332a is appropriately expressed as “central gas chamber 332a”
- the gas chamber 332b is appropriately described as “central gas chamber 332b”.
- the gas chamber 332c is a gas chamber disposed at a position corresponding to the peripheral edge of the wafer W, and surrounds the central gas chamber 332b.
- the gas chamber 332c is appropriately described as a “peripheral gas chamber 332c”.
- the gas chamber 332d is a gas chamber disposed at a position corresponding to the position of the focus ring 124, which is a position outside the peripheral edge of the wafer W.
- the gas chamber 332e is a gas chamber disposed at a position corresponding to a position further outside the focus ring 124, and surrounds the periphery of the gas chamber 332d.
- the gas chamber 332d is appropriately expressed as “outer gas chamber 332d”
- the gas chamber 332e is appropriately described as “outer gas chamber 332e”.
- the gas chambers 332a to 332e are supplied with a processing gas used for plasma processing from a processing gas supply unit 200 described later.
- the processing gas supplied to the central gas chambers 332 a and 332 b is ejected from the gas ejection holes 312 toward the center of the wafer W.
- the processing gas supplied to the peripheral gas chamber 332 c is ejected from the gas ejection hole 312 toward the peripheral edge of the wafer W.
- the processing gas supplied to the outer gas chambers 332 d and 332 e is ejected from the gas ejection hole 312 toward a position outside the peripheral edge of the wafer W.
- the gas chambers 332a to 332e are selectively supplied with an additive gas to be added to the processing gas from an additive gas supply unit 250 described later.
- the additive gas supplied to the central gas chambers 332a and 332b is ejected from the gas ejection holes 312 toward the central portion of the wafer W together with the processing gas.
- the additive gas supplied to the peripheral gas chamber 332c is ejected from the gas ejection holes 312 toward the peripheral edge of the wafer W together with the processing gas.
- the additive gas supplied to the outer gas chambers 332d and 332e is ejected from the gas ejection holes 312 together with the processing gas toward a position outside the peripheral edge of the wafer W.
- a lower power supply tube 170 is electrically connected to the upper surface of the electrode support 320 as shown in FIG.
- the lower power supply tube 170 is connected to the upper power supply rod 148 via the connector 150.
- a variable capacitor 172 is provided in the middle of the lower power supply tube 170. By adjusting the capacitance of the variable capacitor 172, the electric field strength formed immediately below the outer upper electrode 304 when the high frequency power is applied from the first high frequency power supply 154 and the inner strength of the inner upper electrode 302 are formed. It is possible to adjust the relative ratio with the electric field strength.
- An exhaust port 174 is formed at the bottom of the processing chamber 110.
- the exhaust port 174 is connected to an exhaust device 178 having a vacuum pump or the like via an exhaust pipe 176.
- an exhaust device 178 By exhausting the inside of the processing chamber 110 by the exhaust device 178, the inside of the processing chamber 110 can be reduced to a desired pressure.
- a second high frequency power source 182 is electrically connected to the susceptor 116 via a matching unit 180.
- the second high frequency power source 182 can output high frequency power having a frequency of, for example, 2 MHz to 20 MHz, for example, 13 MHz.
- a low pass filter 184 is electrically connected to the inner upper electrode 302 of the upper electrode 300.
- the low pass filter 184 is for cutting off the high frequency from the first high frequency power supply 154 and passing the high frequency from the second high frequency power supply 182 to the ground.
- a high pass filter 186 is electrically connected to the susceptor 116 constituting the lower electrode.
- the high-pass filter 186 is for passing the high frequency from the first high frequency power supply 154 to the ground.
- the processing gas supply unit 200 includes a gas source 202 and a gas source 204.
- the gas source 202 and the gas source 204 supply processing gases used for plasma processing such as plasma etching processing and plasma CVD processing to the gas chambers 332 a to 332 e of the inner upper electrode 302.
- processing gases used for plasma processing such as plasma etching processing and plasma CVD processing
- the gas source 202 uses CF4 gas / CHF3 gas as a processing gas as the gas of the inner upper electrode 302. Supply to chambers 332a-332e.
- the gas source 204 supplies HBr gas / He gas / O 2 gas as a processing gas to the gas chambers 332 a to 332 e of the inner upper electrode 302 when the plasma etching process is performed on the silicon film.
- the processing gas supply unit 200 supplies gas (for example, He gas) used for various processes of the plasma processing apparatus 100.
- the processing gas supply unit 200 is connected to the flow rate adjusting valves 212 and 214 provided between the gas sources 202 and 204 and the gas chambers 332 a to 332 e of the inner upper electrode 302, and the flow rate adjusting valves 212 and 214.
- a flow splitter 216 is connected to the branch channels 216a to 216e, and the branch channels 216a to 216e are connected to the gas chambers 332a to 332e of the inner upper electrode 302, respectively.
- the flow rate of the processing gas supplied to the gas chambers 332a to 332e of the inner upper electrode 302 is controlled by the flow rate adjusting valves 212, 214 and the like.
- the additive gas supply unit 250 includes a gas source 252, a gas source 254, a gas source 256, and a gas source 258.
- the gas source 252, the gas source 254, the gas source 256, and the gas source 258 selectively supply an additive gas to be added to the processing gas to the gas chambers 332 a to 332 e of the inner upper electrode 302.
- the gas source 252 is added to the central gas chamber 332a and / or the central gas chamber 332b among the gas chambers 332a to 332e of the inner upper electrode 302 when a plasma etching process is performed on an organic film such as BARC.
- a first etching gas as a gas is supplied.
- the first etching gas is a gas that promotes the progress of the plasma etching process, and is, for example, O 2 gas.
- the gas source 254 is added to the outer gas chamber 332d and / or the outer gas chamber 332e among the gas chambers 332a to 332e of the inner upper electrode 302 when a plasma etching process is performed on an organic film such as BARC.
- a first deposition gas as a gas is supplied.
- the first deposition gas is a gas that delays the progress of the plasma etching process.
- the first deposition gas is at least one of a CF-based gas such as CH2F2 gas and a COS gas.
- the gas source 256 serves as an additive gas to the central gas chamber 332a and / or the central gas chamber 332b among the gas chambers 332a to 332e of the inner upper electrode 302.
- a second etching gas is supplied.
- the second etching gas is a gas that promotes the progress of the plasma etching process, and is, for example, at least one of HBr gas, NF3 gas, and Cl2 gas.
- the gas source 258 serves as an additive gas for the outer gas chamber 332d and / or the outer gas chamber 332e among the gas chambers 332a to 332e of the inner upper electrode 302 when the plasma etching process is performed on the silicon film.
- a second deposition gas is supplied.
- the second deposition gas is a gas that delays the progress of the plasma etching process, and is, for example, O 2 gas.
- the additive gas supply unit 250 includes flow rate adjustment valves 262, 264, 266, 268 provided between the gas sources 252, 254, 256, 258 and the gas chambers 332a to 332e of the inner upper electrode 302, and flow rate adjustments. Valves 263, 265, 267, and 269 are provided.
- the flow rate adjusting valves 262, 264, 266, and 268 are connected to a merging channel 272 that merges the outputs of the respective flow rate adjusting valves 262, 264, 266, and 268, and the merging channel 272 includes the branch channels 272a to 272e. It is branched to.
- the branch channels 272a to 272e are connected to the gas chambers 332a to 332e of the inner upper electrode 302, respectively.
- the branch flow paths 272a to 272e are provided with opening and closing valves 282a to 282e.
- the open / close valves 282a to 282e switch between supply and stop of supply of additive gas from the gas sources 252, 254, 256, and 258, respectively.
- the flow rate of the additive gas supplied to the gas chambers 332a to 332e of the inner upper electrode 302 is controlled by flow rate adjusting valves 262, 264, 266, 268 and the like.
- the flow rate adjusting valves 263, 265, 267, and 269 are connected to a merging channel 273 that merges the outputs of the respective flow rate adjusting valves 263, 265, 267, and 269, and the merging channel 273 includes the branch channels 273a to 273e. It is branched to.
- the branch flow paths 273a to 273e are connected to gas chambers 332a to 332e of the inner upper electrode 302, respectively.
- the branch flow paths 273a to 273e are provided with opening and closing valves 283a to 283e.
- the open / close valves 283a to 283e switch between supply and stop of supply of the additive gas from the gas sources 252, 254, 256, and 258, respectively.
- the flow rate of the additive gas supplied to the gas chambers 332a to 332e of the inner upper electrode 302 is controlled by flow rate adjusting valves 263, 265, 267, 269 and the like.
- FIG. 3 is a block diagram illustrating a configuration example of the control unit in the present embodiment.
- the control unit 400 includes a CPU (Central Processing Unit) 410 that constitutes the control unit main body, and a RAM (such as a memory area used for various data processing performed by the CPU 410).
- a CPU Central Processing Unit
- RAM such as a memory area used for various data processing performed by the CPU 410.
- Random Access Memory 420
- display means 430 including a liquid crystal display for displaying an operation screen, a selection screen, etc., input of various data such as process recipe input and editing by an operator, and process recipes to a predetermined storage medium
- An operation unit 440, a storage unit 450, and an interface 460 configured with a touch panel or the like capable of outputting various data such as process log output are provided.
- the storage unit 450 stores, for example, a processing program for executing various processes of the plasma processing apparatus 100, information (data) necessary for executing the processing program, and the like.
- the storage unit 450 is configured by a memory, a hard disk (HDD), or the like, for example. A structural example of data stored in the storage unit 450 will be described later.
- the CPU 410 reads program data and the like as necessary and executes various processing programs.
- the interface 460 is connected to each unit such as the processing gas supply unit 200 and the additive gas supply unit 250 controlled by the CPU 410.
- the interface 460 includes a plurality of I / O ports, for example.
- the CPU 410, the RAM 420, the display unit 430, the operation unit 440, the storage unit 450, the interface 460, and the like are connected by a bus line such as a control bus or a data bus.
- control unit 400 controls each unit of the plasma processing apparatus 100 so as to execute a gas supply method described later.
- the control unit 400 includes a film to be processed formed on a substrate by combining a combination of a gas chamber to which an additive gas is supplied and a type of additive gas among the gas chambers 332a to 332e of the inner upper electrode 302.
- the additive gas is supplied from the additive gas supply unit 250 to the gas chambers 332a to 332e based on the selected combination.
- the substrate is, for example, the wafer W.
- the film to be processed corresponds to, for example, an organic film or a silicon film.
- the control unit 400 executes the gas supply method using data stored in the storage unit 450.
- FIG. 4 is a diagram showing an example of the structure of data stored in the storage means in this embodiment.
- the storage means 450 stores the combination of the type of additive gas and the gas chamber in association with the type of film to be processed.
- the type of film to be processed indicates the type of film to be processed formed on the wafer W to be plasma processed.
- the type of additive gas indicates the type of additive gas supplied to any of the gas chambers 332a to 332e of the inner upper electrode 302 according to the type of film to be processed.
- the gas chamber indicates a gas chamber in which the additive gas is actually supplied among the gas chambers 332a to 332e of the inner upper electrode 302, and the mark “ ⁇ ” indicates that the additive gas is actually supplied. , “ ⁇ ” indicates that the gas chamber is not supplied with the additive gas.
- the first line written as “organic film” in FIG. 4 shows the central gas chamber 332a among the gas chambers 332a to 332e of the inner upper electrode 302 when the film to be processed of the wafer W is “organic film”.
- 332b indicates that a combination for supplying the first etching gas can be selected.
- the first row of FIG. 4 shows that when the film to be processed of the wafer W is an “organic film”, the outer gas chambers 332d and 332e out of the gas chambers 332a to 332e of the inner upper electrode 302 1 shows that a combination of supplying one deposition gas can be selected.
- FIG. 4 shows the central gas in the gas chambers 332a to 332e of the inner upper electrode 302 when the film to be processed of the wafer W is “silicon film”. It shows that a combination for supplying the second etching gas to the chambers 332a and 332b can be selected. Further, for example, the second row of FIG. 4 shows the case where the film to be processed of the wafer W is a “silicon film” with respect to the outer gas chambers 332 d and 332 e among the gas chambers 332 a to 332 e of the inner upper electrode 302. 2 shows that a combination of supplying two deposition gases can be selected.
- FIG. 5 is a flowchart showing a processing procedure of the gas supply method by the plasma processing apparatus according to the present embodiment.
- the gas supply method illustrated in FIG. 5 is, for example, plasma after processing gas from the processing gas supply unit 200 is introduced into the processing chamber 110 and plasma that converts the processing gas introduced into the processing chamber 110 into plasma. It is executed before the process is executed.
- a wafer W on which an organic film or a silicon film is formed as a film to be processed is disposed in the processing chamber 110 will be described.
- the control unit 400 of the plasma processing apparatus 100 determines whether or not the type of film to be processed has been received (step S101). For example, the control unit 400 receives the type of film to be processed from the operation unit 440. Moreover, the control part 400 can also receive the classification of a to-be-processed film as a detection result from detection means, such as a detection sensor which detects the classification of a to-be-processed film autonomously. Further, the control unit 400 holds a table in which the time at which the type of the film to be processed is changed and the type of the film to be processed after the change are associated is stored in the storage unit 450, and the type of the film to be processed is changed. When the time to be processed arrives, the type of film to be processed corresponding to the time can also be received from the table. When the type of film to be processed is not received (step S101; No), the control unit 400 stands by.
- step S101 when the type of film to be processed is received (step S101; Yes), the control unit 400 determines whether or not the type of film to be processed indicates an organic film (step S102).
- the control unit 400 refers to the storage unit 450 and supplies the first etching gas to the central gas chambers 332a and 332b.
- a combination for supplying the first deposition gas to the outer gas chambers 332d and 332e is selected (step S103).
- the control unit 400 supplies O2 gas as the first etching gas to the central gas chamber 332a as a combination corresponding to the organic film, and as the first deposition gas to the outer gas chamber 332d.
- the combination for supplying the CH 2 F 2 gas is selected from the storage means 450.
- the controller 400 supplies O2 gas as the first etching gas to the central gas chambers 332a and 332b based on the selected combination (step S104).
- the control unit 400 controls the flow rate adjustment valve 262 and the open / close valves 282a and 282b of the additive gas supply unit 250 to be in an open state, and supplies O2 gas as the first etching gas to the central gas chambers 332a and 332b.
- the O 2 gas as the first etching gas supplied to the central gas chambers 332a and 332b is ejected from the gas ejection holes 312 toward the central portion of the wafer W together with the processing gas.
- the controller 400 supplies CH2F2 gas as the first deposition gas to the outer gas chambers 332d and 332e based on the selected combination (step S105).
- the control unit 400 controls the flow rate adjustment valve 265 and the opening / closing valves 283d and 283e of the additive gas supply unit 250 to be in an open state, and supplies CH2F2 gas as the first deposition gas to the outer gas chambers 332d and 332e.
- the CH 2 F 2 gas as the first deposition gas supplied to the outer gas chambers 332 d and 332 e is ejected from the gas ejection holes 312 toward the position outside the peripheral edge of the wafer W together with the processing gas.
- step S106 determines whether or not the type of film to be processed indicates a silicon film.
- step S106 determines whether or not the type of film to be processed indicates a silicon film.
- the control unit 400 supplies HBr gas as the second etching gas to the central gas chamber 332b, and as the second deposition gas to the outer gas chamber 332d.
- the combination for supplying the O 2 gas is selected from the storage means 450.
- the control unit 400 supplies HBr gas as the second etching gas to the central gas chamber 332b based on the selected combination (step S108).
- the control unit 400 controls the flow rate adjustment valve 266 and the opening / closing valve 282b of the additive gas supply unit 250 to be in an open state, and supplies HBr gas as the second etching gas to the central gas chamber 332b.
- the HBr gas as the second etching gas supplied to the central gas chamber 332b is ejected from the gas ejection holes 312 toward the central portion of the wafer W together with the processing gas.
- control unit 400 supplies O 2 gas as the second deposition gas to the outer gas chambers 332d and 332e based on the selected combination (step S109).
- control unit 400 controls the flow rate adjustment valve 269 and the opening / closing valves 283d and 283e of the additive gas supply unit 250 to be in an open state, and supplies O 2 gas as the second deposition gas to the outer gas chambers 332d and 332e.
- the O 2 gas as the second deposition gas supplied to the outer gas chambers 332d and 332e is ejected from the gas ejection hole 312 toward the position outside the peripheral edge of the wafer W together with the processing gas.
- a plasma process is performed for converting the processing gas introduced into the processing chamber 110 and the additive gas into plasma.
- active species such as ions are generated from the plasma gas, and the film to be processed on the wafer W is etched by the active species.
- the combination of the gas chamber to which the additive gas is supplied and the type of the additive gas among the gas chambers 332a to 332e is selected according to the type of the film to be processed formed on the substrate.
- the additive gas is supplied to the gas chambers 332a to 332e based on the selected combination. For this reason, even when the type of the film to be processed is changed, the supply position of the additive gas and the type of the additive gas can be appropriately changed according to the type of the film to be processed after the change.
- the type of additive gas introduced from the central gas chambers 332a and 332b to the vicinity of the central portion of the wafer W and the outer gas chambers 332d and 332e to the vicinity of the peripheral portion of the wafer W can be changed according to the type of film to be processed.
- the etching rate near the center of the wafer W and the etching rate near the peripheral edge of the wafer W can be relatively adjusted, It is possible to appropriately maintain the uniformity of the surface to be processed of the film to be processed following the change of the film.
- the first deposition gas or the second deposition gas is supplied to the outer gas chambers 332d and 332e among the gas chambers 332a to 332e. It is possible to suppress the gas from entering the vicinity of the center of the wafer W. For this reason, it is possible to prevent the etching rate in the vicinity of the central portion of the wafer W from inadvertently changing due to the deposition gas. As a result, the uniformity of the surface to be processed of the film to be processed can be accurately maintained.
- the above processing procedures are not limited to the above order, and may be appropriately changed within a range that does not contradict the processing contents.
- the above steps S104 and S105 may be executed in parallel.
- the above steps S108 and S109 may be executed in parallel.
- the first etching gas is supplied to the central gas chamber and the first deposition is performed to the outer gas chamber.
- the combination selected is not limited to this.
- a combination for supplying the first etching gas to the central gas chamber in step S103 may be selected.
- the above step S105 can be omitted.
- a combination in which the first deposition gas is supplied to the outer gas chamber in step S103 may be selected.
- the above step S104 can be omitted.
- the second etching gas is supplied to the central gas chamber, and the second deposition gas is applied to the outer gas chamber.
- the combination selected is not limited to this.
- a combination for supplying the second etching gas to the central gas chamber in step S107 may be selected.
- the above step S109 can be omitted.
- a combination of supplying the second deposition gas to the outer gas chamber in step S107 may be selected.
- FIG. 6A is a diagram (part 1) illustrating an etching rate when a wafer is etched without using the gas supply method of the present embodiment.
- 6B and 6C are diagrams (part 1) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- the etching rate (nm / min) in the case of etching with a processing gas of / 3 sccm is shown.
- the etching rate (nm / min) in the case of etching with a processing gas of / 3 sccm is shown.
- the etching rate at the peripheral portion of the wafer W is higher than the etching rate at the central portion of the wafer W. That is, when CH2F2 as the first deposition gas is not supplied to the outer gas chambers 332d and 332e, the difference between the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W is determined in advance. The acceptable specifications were not met.
- the etching rate of the peripheral portion of the wafer W and the etching rate of the central portion of the wafer W are relative to each other.
- the difference between the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W is determined in advance. Meet acceptable specifications.
- FIG. 7A is a diagram (part 2) showing an etching rate when a wafer is etched without using the gas supply method of the present embodiment.
- FIG. 7B is a diagram (part 2) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- the etching rate (nm / min) in the case of etching with a processing gas is shown.
- the horizontal axis indicates the position of the wafer W in the radial direction.
- FIGS. 7A and 7B show the etching rate from the position “ ⁇ 150 (mm)” to the position “+150 (mm)” of the wafer W, where the center position of the wafer W is “0”.
- the pressure in the processing chamber 110 was 60 mTorr (8 Pa)
- the output of the first high-frequency power supply / the output of the second high-frequency power supply 300/50 W.
- the etching rate of the peripheral portion of the wafer W is higher than the etching rate of the central portion of the wafer W. That is, when O2 as the first etching gas is not supplied to the central gas chamber 332b, the difference between the etching rate at the central portion of the wafer W and the etching rate at the peripheral portion of the wafer W satisfies a predetermined allowable specification. It did not meet.
- the etching rate of the peripheral portion of the wafer W and the etching rate of the central portion of the wafer W are relatively uniform. Adjusted. That is, when O2 as the first etching gas is supplied to the central gas chamber 332b, the difference between the etching rate at the central portion of the wafer W and the etching rate at the peripheral portion of the wafer W satisfies a predetermined allowable specification. It became to satisfy.
- FIG. 8A is a diagram (part 3) illustrating an etching rate when a wafer is etched without using the gas supply method of the present embodiment.
- FIG. 8B and FIG. 8C are views (No. 3) showing the etching rate when the wafer is etched using the gas supply method of this embodiment.
- the etching rate (nm / min) is shown.
- the etching rate (nm / min) is shown.
- the horizontal axis indicates the position of the wafer W in the radial direction. That is, FIGS. 8A to 8C show the etching rate from the position “ ⁇ 150 (mm)” to the position “+150 (mm)” of the wafer W, with the center position of the wafer W being “0”.
- the etching rate at the center of the wafer W is lower than the etching rate at the peripheral edge of the wafer W. That is, when HBr as the second etching gas is not supplied to the central gas chambers 332a and 332b, a difference between the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W is determined in advance. The acceptable specifications were not met.
- the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W are relative to each other.
- the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W are relative to each other.
- HBr as the second etching gas is supplied to the central gas chambers 332a and 332b, a difference between the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W is determined in advance. Meet acceptable specifications.
- FIG. 9A is a diagram (part 4) illustrating an etching rate when a wafer is etched without using the gas supply method of the present embodiment.
- FIG. 9B and FIG. 9C are diagrams (part 4) illustrating an etching rate when a wafer is etched using the gas supply method of the present embodiment.
- the etching rate (nm / min) when etching with a certain processing gas is shown.
- the etching rate (nm / min) when etching with a certain processing gas is shown.
- the horizontal axis indicates the position of the wafer W in the radial direction. That is, FIGS. 9A to 9C show the etching rate from the position “ ⁇ 150 (mm)” to the position “+150 (mm)” of the wafer W, where the center position of the wafer W is “0”. .
- the etching rate at the center of the wafer W is lower than the etching rate at the peripheral edge of the wafer W. That is, when NF3 as the second etching gas is not supplied to the central gas chambers 332a and 332b, the difference between the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W is determined in advance. The acceptable specifications were not met.
- the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W are relative to each other.
- the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W are relative to each other.
- the difference between the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W is determined in advance. Meet acceptable specifications.
- FIG. 10A is a diagram (No. 5) showing an etching rate when a wafer is etched without using the gas supply method of the present embodiment.
- FIG. 10B and FIG. 10C are views (No. 5) showing the etching rate when the wafer is etched using the gas supply method of the present embodiment.
- the etching rate (nm / min) is shown.
- the etching rate at the center of the wafer W is lower than the etching rate at the peripheral edge of the wafer W. That is, when O2 as the second deposition gas is not supplied to the outer gas chambers 332d and 332e, the difference between the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W is determined in advance. The acceptable specifications were not met.
- the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W are relative to each other.
- the difference between the etching rate at the center of the wafer W and the etching rate at the peripheral edge of the wafer W is determined in advance. Meet acceptable specifications.
- Plasma processing apparatus 110 Processing chamber 250 Addition gas supply unit 252, 254, 256, 258 Gas source 262, 264, 266, 268 Flow rate adjustment valve 282a to 282e Open / close valve 300 Upper electrode 302 Inner upper electrode (gas introduction unit) 332a to 332e Gas chamber 400 control unit
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Abstract
Description
110 処理室
250 添加ガス供給部
252,254,256,258 ガス源
262,264,266,268 流量調整バルブ
282a~282e 開閉バルブ
300 上部電極
302 内側上部電極(ガス導入部)
332a~332e ガス室
400 制御部
Claims (10)
- 被処理膜が形成された基板が配置される処理室内にプラズマ処理に用いられる処理ガスを導入するガス導入部を区画して得られた複数のガス室のうち添加ガスが供給されるガス室と前記添加ガスの種別との組合せを前記被処理膜の種別に応じて選択する選択工程と、
前記選択工程によって選択された前記組合せに基づいて、前記ガス室に対して前記添加ガスを供給する添加ガス供給工程と
を含むことを特徴とするガス供給方法。 - 前記選択工程は、前記被処理膜の種別が有機膜を示す場合には、前記複数のガス室のうち前記基板の中央部に対応する位置に配置されたガス室に対して前記添加ガスとしての第1のエッチングガスを供給する前記組合せを選択することを特徴とする請求項1に記載のガス供給方法。
- 前記選択工程は、前記被処理膜の種別が有機膜を示す場合には、前記複数のガス室のうち前記基板の周縁部よりも外側の位置に対応する位置に配置されたガス室に対して前記添加ガスとしての第1の堆積ガスを供給する前記組合せを選択することを特徴とする請求項1又は2に記載のガス供給方法。
- 前記選択工程は、前記被処理膜の種別がシリコン膜を示す場合には、前記複数のガス室のうち前記基板の中央部に対応する位置に配置されたガス室に対して前記添加ガスとしての第2のエッチングガスを供給する前記組合せを選択することを特徴とする請求項1又は2に記載のガス供給方法。
- 前記選択工程は、前記被処理膜の種別がシリコン膜を示す場合には、前記複数のガス室のうち前記基板の周縁部よりも外側の位置に対応する位置に配置されたガス室に対して前記添加ガスとしての第2の堆積ガスを供給する前記組合せを選択することを特徴とする請求項1又は2に記載のガス供給方法。
- 前記第1のエッチングガスは、O2ガスであることを特徴とする請求項2に記載のガス供給方法。
- 前記第1の堆積ガスは、CF系ガス及びCOSガスのうち少なくともいずれか一つのガスであることを特徴とする請求項3に記載のガス供給方法。
- 前記第2のエッチングガスは、HBrガス、NF3ガス及びCl2ガスのうち少なくともいずれか一つのガスであることを特徴とする請求項4に記載のガス供給方法。
- 前記第2の堆積ガスは、O2ガスであることを特徴とする請求項5に記載のガス供給方法。
- 被処理膜が形成された基板が配置される処理室と、
前記処理室内にプラズマ処理に用いられる処理ガスを導入するガス導入部と、
前記ガス導入部を区画して得られた複数のガス室に対して添加ガスを供給する添加ガス供給部と、
前記複数のガス室のうち前記添加ガスが供給されるガス室と前記添加ガスの種別との組合せを前記被処理膜の種別に応じて選択するとともに、選択された前記組合せに基づいて、前記添加ガス供給部から前記ガス室に対して前記添加ガスを供給する制御部と
を備えることを特徴とするプラズマ処理装置。
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JP6336719B2 (ja) * | 2013-07-16 | 2018-06-06 | 株式会社ディスコ | プラズマエッチング装置 |
US9275869B2 (en) * | 2013-08-02 | 2016-03-01 | Lam Research Corporation | Fast-gas switching for etching |
KR101560623B1 (ko) * | 2014-01-03 | 2015-10-15 | 주식회사 유진테크 | 기판처리장치 및 기판처리방법 |
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TWI608515B (zh) | 2017-12-11 |
JP2014063918A (ja) | 2014-04-10 |
KR20150056536A (ko) | 2015-05-26 |
US20150228457A1 (en) | 2015-08-13 |
TW201428811A (zh) | 2014-07-16 |
JP6140412B2 (ja) | 2017-05-31 |
KR102132045B1 (ko) | 2020-07-08 |
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