CN111293065A - 基板处理装置以及基板处理方法 - Google Patents
基板处理装置以及基板处理方法 Download PDFInfo
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- CN111293065A CN111293065A CN201911256495.3A CN201911256495A CN111293065A CN 111293065 A CN111293065 A CN 111293065A CN 201911256495 A CN201911256495 A CN 201911256495A CN 111293065 A CN111293065 A CN 111293065A
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- liquid
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Abstract
本发明提供基板处理装置以及基板处理方法。提供能够提高基板处理的面内均匀性的技术。本公开的基板处理装置具备载置部、供给部、阻挡部以及移动机构。载置部载置基板。供给部对载置于载置部的基板供给处理液。阻挡部包围载置于载置部的基板,阻止供给至基板的处理液自基板流出。移动机构对阻挡部的高度进行变更。
Description
技术领域
本公开涉及基板处理装置以及基板处理方法。
背景技术
以往,公知有一种基板处理方法,通过使半导体晶圆等基板旋转,并且向旋转的基板的中心部供给蚀刻液等处理液,来对基板进行处理(参照专利文献1)。
专利文献1:日本特开2014-187253号公报
发明内容
发明要解决的问题
本公开提供一种能够提高基板处理的面内均匀性的技术。
用于解决问题的方案
本公开的一方案的基板处理装置具备载置部、供给部、阻挡部以及移动机构。载置部载置基板。供给部对载置于载置部的基板供给处理液。阻挡部包围载置于载置部的基板,阻止供给至基板的处理液自基板流出。移动机构对阻挡部的高度进行变更。
发明的效果
根据本公开,能够提高基板处理的面内均匀性。
附图说明
图1是表示第1实施方式的基板处理系统的结构的图。
图2是表示第1实施方式的处理单元的结构的图。
图3是表示第1实施方式的阻挡机构的结构的图。
图4是图3所示的IV-IV线剖视图的一例。
图5是表示第1实施方式的基板处理系统所执行的基板处理的步骤的流程图。
图6是第1实施方式的基板处理的动作说明图。
图7是第1实施方式的基板处理的动作说明图。
图8是第1实施方式的基板处理的动作说明图。
图9是第1实施方式的基板处理的动作说明图。
图10是第1实施方式的基板处理的动作说明图。
图11是第1实施方式的基板处理的动作说明图。
图12是表示第2实施方式的基板处理系统所执行的基板处理的步骤的流程图。
图13是对外周部处的膜厚比中心部处的膜厚厚的晶圆进行的局部蚀刻处理的动作说明图。
图14是表示对外周部处的膜厚比中心部处的膜厚厚的晶圆进行的局部蚀刻处理以及由蚀刻处理所产生的膜厚的变化的图。
图15是对中心部处的膜厚比外周部处的膜厚厚的晶圆进行的局部蚀刻处理的动作说明图。
图16是表示对中心部处的膜厚比外周部处的膜厚厚的晶圆进行的局部蚀刻处理以及由蚀刻处理所产生的膜厚的变化的图。
图17是表示第3实施方式的高度调整处理的步骤的流程图。
图18是表示第4实施方式的第1变形例的阻挡机构的结构的图。
图19是表示第4实施方式的第2变形例的阻挡机构的结构的图。
图20是表示第4实施方式的第3变形例的阻挡机构的结构的图。
具体实施方式
以下,参照附图,详细地说明用于实施本公开的基板处理装置和基板处理方法的形态(以下,记载为“实施方式”)。此外,本公开的基板处理装置和基板处理方法并不被该实施方式限定。此外,各实施方式能够在不使处理内容矛盾的范围内适当组合。此外,在以下的各实施方式中,对相同的部位标注相同的附图标记,省略重复的说明。
此外,在以下所参照的各附图中,为了易于理解说明,存在表示正交坐标系的情况下,该正交坐标系为:规定相互正交的X轴、Y轴和Z轴,并且将Z轴正方向设为铅垂朝上方向。
近年来,在半导体的制造工序中,对于湿蚀刻的需求不断增加。湿蚀刻中的、逐张处理基板的单片式的湿蚀刻通过使基板旋转并且向旋转的基板的中心部供给蚀刻液来进行。
在单片式的湿蚀刻中,例如为了处理的高效化等,有时使用加热为预定温度的蚀刻液。然而,被加热的蚀刻液在向基板的中心部供给之后、到达基板的外周部的期间,由于向基板等的吸热、汽化热等产生的散热而温度降低。具体而言,蚀刻液的温度在基板的外周部比中央部低。这样,在基板的面内蚀刻液的温度不均匀,从而有可能降低蚀刻处理的面内均匀性。
因此,在本公开的基板处理装置中,通过提高基板的面内的蚀刻液的温度均匀性,从而提高蚀刻处理的面内均匀性。
(第1实施方式)
首先,参照图1对第1实施方式的基板处理系统的结构进行说明。图1是表示第1实施方式的基板处理系统的结构的图。
如图1所示,基板处理系统1具备送入送出站2和处理站3。送入送出站2和处理站3相邻地设置。
送入送出站2具备承载件载置部11和输送部12。在承载件载置部11载置有以水平状态收纳多张基板、在本实施方式中为半导体晶圆(以下,记载为“晶圆W”)的多个承载件C。
输送部12与承载件载置部11相邻地设置,在输送部12的内部配置有基板输送装置13和交接部14。基板输送装置13具备保持晶圆W的晶圆保持机构。基板输送装置13能够进行水平方向和铅垂方向的移动以及以铅垂轴线为中心的回转,使用晶圆保持机构而在承载件C与交接部14之间进行晶圆W的输送。
处理站3与输送部12相邻地设置。处理站3具备输送部15和多个处理单元16。多个处理单元16沿着输送部15的两侧排列设置。
输送部15在内部具有基板输送装置17。基板输送装置17具备保持晶圆W的晶圆保持机构。另外,基板输送装置17能够进行水平方向和铅垂方向的移动以及以铅垂轴线为中心的回转,使用晶圆保持机构而在交接部14与处理单元16之间进行晶圆W的输送。
处理单元16对利用基板输送装置17输送的晶圆W进行预定的基板处理。
此外,基板处理系统1具备控制装置4。控制装置4是例如计算机,具备控制部18和存储部19。在存储部19储存有对在基板处理系统1中执行的各种处理进行控制的程序。控制部18通过读取并执行存储于存储部19的程序来对基板处理系统1的动作进行控制。
此外,该程序既可以是存储到利用计算机能够读取的存储介质的程序,也可以是从该存储介质加载到控制装置4的存储部19的程序。作为利用计算机能够读取的存储介质,存在例如硬盘(HD)、软盘(FD)、光盘(CD)、磁光盘(MO)以及存储卡等。
在上述这样构成的基板处理系统1中,首先,送入送出站2的基板输送装置13从载置于承载件载置部11的承载件C取出晶圆W,将取出的晶圆W载置于交接部14。利用处理站3的基板输送装置17将载置于交接部14的晶圆W从交接部14取出,并向处理单元16送入。
在利用处理单元16对送入到处理单元16的晶圆W进行了处理之后,利用基板输送装置17将该晶圆W自处理单元16送出,并载置于交接部14。然后,利用基板输送装置13使载置于交接部14的已处理的晶圆W返回承载件载置部11的承载件C。
接下来,参照图2~图4对处理单元16的结构进行说明。图2是表示第1实施方式的处理单元16的结构的图。图3是表示第1实施方式的阻挡机构60的结构的图。图4是图3所示的IV-IV线剖视图的一例。
如图2所示,处理单元16具备腔室20、基板保持机构30、供给部40、回收杯50、阻挡机构60以及温度检测部70。
腔室20收纳基板保持机构30、供给部40、回收杯50、阻挡机构60以及温度检测部70。腔室20的顶部设有FFU(Fan Filter Unit:风扇过滤单元)21。FFU21在腔室20内形成下向流动。
基板保持机构30具备旋转板31、支柱部32以及驱动部33。旋转板31设于腔室20的大致中央。在旋转板31的上表面设有从下方支承晶圆W的外周部的多个支承构件311。晶圆W被多个支承构件311支承从而以自旋转板31略微分开的状态被水平地载置。另外,不限于此,也可以为多个支承构件311从侧方把持晶圆W的结构。
支柱部32为沿铅垂方向延伸的构件,支柱部32的基端部被驱动部33支承为能够旋转,在支柱部32的顶端部将旋转板31支承为水平。驱动部33使支柱部32绕铅垂轴线旋转。
该基板保持机构30使用驱动部33使支柱部32旋转,从而使支承于支柱部32的旋转板31旋转,由此,使载置于旋转板31的晶圆W旋转。晶圆W利用因旋转而产生的负压保持于旋转板31。
供给部40对保持于基板保持机构30的晶圆W供给各种处理液。该供给部40具备喷嘴41、水平地支承喷嘴41的臂42以及使臂42旋转和升降的旋转升降机构43。
喷嘴41经由流量调整器44a、加热部45以及阀46a与蚀刻液供给源47a连接。自蚀刻液供给源47a供给的蚀刻液被加热部45加热为预定的温度,而从喷嘴41向晶圆W的上表面喷出。作为蚀刻液,例如使用HF(氢氟酸)、TMAH(四甲基氢氧化铵)等。
此外,喷嘴41经由流量调整器44b以及阀46b与冲洗液供给源47b连接。自冲洗液供给源47b供给例如DIW(脱离子水)作为冲洗液。
回收杯50以包围旋转板31的方式配置,收集因旋转板31的旋转而自晶圆W飞散的处理液。在回收杯50的底部形成有排液口51,被回收杯50收集来的处理液自该排液口51向处理单元16的外部排出。此外,在回收杯50的底部形成有使自FFU21供给来的气体向处理单元16的外部排出的排气口52。
阻挡机构60具备阻挡部61、支承部62、支柱部63以及移动机构64。如图2以及图3所示,阻挡部61为圆筒状的构件,在回收杯50的内部以包围载置于旋转板31的晶圆W的方式配置于旋转板31的外周,阻止向晶圆W供给的蚀刻液自晶圆W流出。另外,为了防止阻挡部61和旋转板31之间的干涉,在两者之间设有间隙。
如图4所示,阻挡部61具有由第1构件611和第2构件612构成的双层构造。第1构件611配置于阻挡部61的内周侧,该第1构件611为在对晶圆W供给了蚀刻液时与供给至晶圆W的蚀刻液接触的构件。第2构件612配置于阻挡部61的外周侧,该第2构件612为与大气接触的构件。
作为第1构件611,优选使用与第2构件612相比较导热率较高的材质。使用导热率较高的材质作为第1构件611,从而能够使与蚀刻液接触的第1构件611的温度及早调整为蚀刻液的温度。因而,能够抑制例如由于第1构件611的温度低于蚀刻液的温度的状态长时间持续而使蚀刻液的温度在晶圆W的外周部和中央部之间产生差异。
此外,作为第2构件612,优选使用绝热材料等绝热性能较高的材质。使用绝热性能较高的材质作为第2构件612,从而被蚀刻液加热的阻挡部61的热量向难以大气释放,因此,易于将阻挡部61的温度维持为蚀刻液的温度。因而,能够抑制例如由于阻挡部61的温度降低而使蚀刻液的温度在晶圆W的外周部和中央部之间产生差异。
另外,阻挡部61只要是包含至少第1构件611和第2构件612的结构即可,不需要必须为双层构造。即、阻挡部61只要是包含第1构件611以及第2构件612在内的多层构造即可。
支承部62支承阻挡部61。具体而言,支承部62例如具备:第1支承构件62a,其沿水平方向延伸;以及第2支承构件62b,其沿铅垂方向延伸,该第2支承构件62b将阻挡部61与第1支承构件62a连接起来。在此,示出了第1支承构件62a设于比旋转板31靠下方的位置的情况的例子,但也可以是,第1支承构件62a设于比旋转板31靠上方的位置。即、支承部62也可以为自上方支承旋转板31的结构。
支柱部63为沿铅垂方向延伸的构件,在该支柱部63的顶端部将支承部62的第1支承构件62a支承为水平。移动机构64使支柱部63沿铅垂方向移动。在此,支柱部63为中空状的构件,在内部贯穿有支柱部32,但支柱部63不需要必须是供支柱部32贯穿的结构。支柱部63也可以例如为支承第1支承构件62a的除中央部以外的部位的结构。
该阻挡机构60使用移动机构64使支柱部63沿铅垂方向移动,从而使被支柱部63支承的支承部62沿铅垂方向移动。由此,阻挡机构60能够变更阻挡部61的高度。例如,阻挡机构60能够使阻挡部61在包围晶圆W的位置和未包围晶圆W的位置之间移动。“包围晶圆W的位置”是指阻挡部61的如下位置:例如阻挡部61的上端面配置在比晶圆W的上表面高的位置。此外,“未包围晶圆W的位置”是指阻挡部61的如下位置:阻挡部61的上端面配置在比晶圆W的上表面低的位置。
温度检测部70在腔室20内配置在比载置于旋转板31的晶圆W靠上方的位置,检测晶圆W的上表面的温度,向控制部18输出检测结果。
温度检测部70例如为红外线传感器。具体而言,温度检测部70具备接受红外线的受光元件,利用受光元件接受从对象区域内的物体放射的红外线从而以非接触的方式检测对象区域内的物体的温度。在此,以载置于旋转板31的晶圆W的上表面整体作为对象区域,但对象区域包含至少晶圆W的中心部以及外周部即可。
接下来,参照图5~图11说明基板处理系统1的具体动作。图5是表示第1实施方式的基板处理系统1所执行的基板处理的步骤的流程图。基板处理系统1所具备的各装置按照控制部18的控制而执行图5所示的各处理步骤。此外,图6~图11是第1实施方式的基板处理的动作说明图。
如图5所示,在基板处理系统1中,首先,进行向处理单元16送入晶圆W的送入处理(步骤S101)。具体而言,送入送出站2的基板搬送装置13从载置于承载件载置部11的承载件C取出晶圆W,将取出的晶圆W载置于交接部14。之后,处理站3的基板输送装置17从交接部14取出载置于交接部14的晶圆W,并载置于处理单元16的旋转板31。
如图6所示,在送入处理时,阻挡部61的上端面配置在比被支承构件311支承的晶圆W的上表面低的位置。由此,能够防止晶圆W的送入送出被阻挡部61阻碍。
接下来,在基板处理系统1中,控制部18对移动机构64进行控制而使阻挡部61上升(步骤S102)。由此,如图7所示,晶圆W成为被阻挡部61包围的状态。此外,如图7所示,控制部18对旋转升降机构43进行控制而使喷嘴41位于晶圆W的中央上方的位置。
接下来,在基板处理系统1中,进行蚀刻处理(步骤S103)。具体而言,控制部18对驱动部33进行控制而使旋转板31旋转,从而使载置于旋转板31的晶圆W旋转。此外,控制部18使阀46a开放预定时间,从而自喷嘴41朝向旋转的晶圆W的上表面喷出自蚀刻液供给源47a供给来的蚀刻液。蚀刻液以被加热部45加热了的状态自喷嘴41喷出。
向晶圆W供给的蚀刻液利用随着晶圆W的旋转而产生的离心力在晶圆W的整面扩展。之后,蚀刻液欲自晶圆W的上表面流出,但被阻挡部61阻止,从而使该蚀刻液存积在晶圆W上。由此,如图8所示,与未设置阻挡部61的情况相比较,能够使在晶圆W上形成的蚀刻液的液膜增厚。另外,蚀刻液自阻挡部61的上端或阻挡部61和旋转板31之间的间隙慢慢地流出,并自排液口5向处理单元16的外部排出。
如上所述,蚀刻液的温度由于向晶圆W等的吸热、或者因蒸发而产生的汽化热而降低。其中,因吸热而产生的温度降低在晶圆W的外周部比在晶圆W的中心部大。这是因为,例如,由于晶圆W的旋转、表面张力等的影响,晶圆W的外周部处的蚀刻液的液膜比中心部处的液膜薄,从而外周部处的液膜的蓄热量比中心部处的液膜的蓄热量少。
因此,在第1实施方式的处理单元16中,利用阻挡部61阻止蚀刻液自晶圆W的流出,从而使在晶圆W上形成的蚀刻液的液膜增厚。
蚀刻液的液膜增厚,从而液膜所具有的蓄热量增加,因此,假设即使在晶圆W的中心部和外周部之间液膜的厚度存在差异的情况下,该差异给蚀刻液的温度带来的影响也减少。也就是说,蚀刻液的温度在晶圆W的中心部和外周部之间难以产生差异。
这样,根据第1实施方式的处理单元16,能够提高晶圆W的面内的蚀刻液的温度均匀性,因此,能够提高蚀刻处理的面内均匀性。
接下来,在蚀刻处理结束时,在基板处理系统1中,控制部18对移动机构64进行控制而使阻挡部61下降(步骤S104)。由此,如图9所示,阻挡部61成为如下状态:阻挡部61配置在未包围晶圆W的位置、具体而言是阻挡部61的上端面比晶圆W的上表面低的位置。
这样,在结束蚀刻处理后使阻挡部61下降,从而能够在短时间使大量蚀刻液自晶圆W流出,该大量蚀刻液是自晶圆W的流出被阻挡部61阻止了的大量蚀刻液。因而,能够及早行进至冲洗处理。
接下来,在基板处理系统1中,进行冲洗处理(步骤S105)。具体而言,控制部18使阀46b开放预定时间,从而自喷嘴41朝向旋转的晶圆W的中心部喷出自冲洗液供给源47b供给来的冲洗液。向晶圆W的上表面喷出的冲洗液利用随着晶圆W的旋转而产生的离心力从晶圆W的中心部向外周部扩展。由此,如图10所示,在晶圆W的上表面残存的蚀刻液被冲洗液冲洗。
接下来,在基板处理系统1中,进行干燥处理(步骤S106)。具体而言,控制部18对驱动部33进行控制而使晶圆W的转速增加。由此,如图11所示,在晶圆W上残存的冲洗液被去除而使晶圆W干燥。之后,控制部18对驱动部33进行控制从而使晶圆W的旋转停止。
接下来,在基板处理系统1中,进行送出处理(步骤S107)。在送出处理中,利用基板输送装置17将干燥处理后的晶圆W从处理单元16送出,并载置于交接部14。之后,载置于交接部14的已处理的晶圆W利用基板搬送装置13向承载件载置部11的承载件C返回。由此,对于一张晶圆W的一系列的基板处理结束。
优选阻挡部61的高度设定为如下高度:在晶圆W上形成的蚀刻液的液膜的厚度成为不受因吸热、汽化热所产生的影响的厚度。然而,因汽化热所产生的对于蚀刻液的温度的影响的程度因蚀刻液的性质而不同。例如,蚀刻液的沸点越低,因汽化热所产生的对于蚀刻液的温度的影响的程度就越高。
因此,也可以是,控制部18在步骤S102将阻挡部61的高度调整为与蚀刻液的种类相对应的高度。在该情况下,控制装置4例如在存储部19预先存储高度设定信息,该高度设定信息是将蚀刻液的种类与阻挡部61的高度关联起来的高度设定信息。然后,控制部18从示出基板处理的内容的制程信息中指定蚀刻液的种类,并从在存储部19存储的高度设定信息中指定与所指定的蚀刻液的种类相关联的阻挡部61的高度。然后,控制部18对移动机构64进行控制而使阻挡部61上升,从而使阻挡部61成为指定的高度。
这样,也可以是,与蚀刻液的种类相对应地调整阻挡部61的高度。具体而言,也可以是,例如蚀刻液的沸点越高,阻挡部61的高度设定地越高。通过这样,能够适当地抑制因汽化热导致的蚀刻液的温度降低。
此外,因汽化热所产生的对于蚀刻液的温度的影响的程度因蚀刻液的加热温度而不同。例如,蚀刻液的加热温度越高,因汽化热所产生的对于蚀刻液的温度的影响的程度就越高。
因此,也可以是,控制部18在步骤S102将阻挡部61的高度调整为与蚀刻液的加热温度相对应的高度。在该情况下,控制装置4例如在存储部19预先存储高度设定信息,该高度设定信息是将蚀刻液的加热温度与阻挡部61的高度关联起来的高度设定信息。然后,控制部18从示出基板处理的内容的制程信息中指定蚀刻液的加热温度,并从在存储部19存储的高度设定信息中指定与所指定的蚀刻液的加热温度相关联的阻挡部61的高度。然后,控制部18对移动机构64进行控制而使阻挡部61上升,从而使阻挡部61成为指定的的高度。
这样,也可以是,与蚀刻液的加热温度相对应地调整阻挡部61的高度。具体而言,也可以是,在蚀刻液的加热温度较高的情况下,与蚀刻液的加热温度较低的情况相比,阻挡部61的高度升高。通过这样,能够适当地抑制因汽化热导致的蚀刻液的温度降低。
此外,也可以是,控制部18在步骤S104使阻挡部61下降而使蚀刻液自晶圆W的上表面流出之后,在步骤S105,在开始冲洗处理之前,使阻挡部61上升。即、控制部18也可以以利用阻挡部61包围晶圆W的状态进行冲洗处理。由此,能够利用冲洗液冲洗附着于阻挡部61的蚀刻液。
此外,在此,对从阻挡部61的上端溢出蚀刻液的情况的例子进行了说明。不限于此,也可以是,例如在蚀刻液被存积之后,控制部18对流量调整器44a进行控制而使从喷嘴41喷出的蚀刻液的流量减少,以使从阻挡部61和旋转板31之间流出的蚀刻液与从喷嘴41喷出的蚀刻液的流量相同。由此,能够抑制蚀刻液的消耗量。
此外,也可以是,控制部18在蚀刻处理结束之前关闭阀46a,从而停止来自于喷嘴41的蚀刻液的供给。即使在蚀刻处理结束前停止蚀刻液的供给,也能够利用在晶圆W上存积的蚀刻液对晶圆W进行蚀刻。由此,能够抑制蚀刻液的消耗量。
(第2实施方式)
然而,根据晶圆W的不同存在由蚀刻处理去除的膜的膜厚不均匀的情况。例如,存在外周部处的膜厚比中心部处的膜厚厚的晶圆W、中心部处的膜厚比外周部处的膜厚厚的晶圆W。
因此,也可以是,在基板处理系统1中,在进行蚀刻处理之前,进行使在晶圆W的上表面形成的膜的膜厚均匀化的局部蚀刻处理。
参照图12~图16对该点进行说明。图12是表示第2实施方式的基板处理系统1中执行的基板处理的步骤的流程图。此外,图13是对外周部处的膜厚比中心部处的膜厚厚的晶圆W进行的局部蚀刻处理的动作说明图,图14是表示对该晶圆W的局部蚀刻处理以及由蚀刻处理所产生的膜厚的变化的图。此外,图15是对中心部处的膜厚比外周部处的膜厚厚的晶圆W进行的局部蚀刻处理的动作说明图,图16是表示对该晶圆W的局部蚀刻处理以及由蚀刻处理所产生的膜厚的变化的图。
图12所示的步骤S201、S203~S208的处理与上述的图5所示的步骤S101~S107的处理相同。在第2实施方式的基板处理系统1中,在步骤S201向处理单元16送入晶圆W之后,在步骤S203使阻挡部61上升之前,进行局部蚀刻处理(步骤S202)。
在局部蚀刻处理中,在使阻挡部61下降了的状态、即未阻止蚀刻液自晶圆W的流出的状态下,向晶圆W的一部分具体而言膜厚相对厚的部分供给蚀刻液。
例如,如图14的上方图所示,在晶圆W形成有外周部处的膜厚比中心部处的膜厚厚的膜的情况下,如图13所示,控制部18对旋转升降机构43进行控制而使喷嘴41位于晶圆W的外周部的上方的位置。之后,控制部18打开阀46a从而自喷嘴41对晶圆W的外周部供给蚀刻液。向晶圆W的外周部供给的蚀刻液在随着晶圆W的旋转而产生的离心力的作用下朝向晶圆W的外方。因此,不会向晶圆W的中心部供给蚀刻液。这样,仅向晶圆W的外周部供给蚀刻液,从而仅去除在晶圆W的外周部形成的膜。由此,如图14的中间图所示,与开始局部蚀刻处理之前相比较,能够使在晶圆W的上表面形成的膜的膜厚均匀化。之后,在基板处理系统1中,以使阻挡部61上升了的状态进行蚀刻处理(步骤S204)。由此,如图14的下方图所示,在晶圆W的上表面形成的膜被均匀地去除。
此外,例如,如图16的上方图所示,在晶圆W形成有中心部处的膜厚比外周部处的膜厚厚的膜的情况下,如图15所示,控制部18对旋转升降机构43进行控制而使喷嘴41位于晶圆W的中心部的上方的位置。之后,控制部18打开阀46a从而自喷嘴41对晶圆W的中心部供给蚀刻液。向晶圆W的中心部供给的蚀刻液在随着晶圆W的旋转而产生的离心力的作用下在晶圆W的整面扩展。在此,如上所述,在未使阻挡部61上升的状态下,与晶圆W的中心部相比较,外周部的蚀刻量降低。因此,成为形成在晶圆W的中心部的膜比形成在外周部的膜更多地被去除。由此,如图16的中间图所示,与开始局部蚀刻处理之前相比较,能够使在晶圆W的上表面形成的膜的膜厚均匀化。之后,在基板处理系统1中,以使阻挡部61上升了的状态进行蚀刻处理(步骤S204)。由此,如图16的下方图所示,在晶圆W的上表面形成的膜被均匀地去除。
这样,也可以是,在送入处理之后、使阻挡部61上升之前,进行向晶圆W的一部分供给蚀刻液的局部蚀刻处理。由此,能够提高基板处理的面内均匀性,并且也提高基板处理后的膜厚均匀性。
另外,也可以是,控制部18例如预先获取在晶圆W形成的膜的膜厚信息,与膜厚信息相对应地对旋转升降机构43进行控制,从而使喷嘴41向晶圆W的上表面中的与其他部分相比较形成有较厚的膜的部分的上方移动。测量在晶圆W形成的膜的膜厚的膜厚测量部既可以配置于基板处理系统1,也可以配置于基板处理系统1的外部。
(第3实施方式)
例如,在阻挡部61的高度不充分的情况下,有可能使晶圆W面内的蚀刻液的温度产生偏差。因此,也可以是,控制部18基于蚀刻处理中的晶圆W面内的温度分布对阻挡部61的高度进行调整。参照图17对这点进行説明。图17是表示第3实施方式的高度调整处理的步骤的流程图。另外,图17所示的高度调整处理例如在开始了蚀刻处理的情况下开始进行。
如图17所示,控制部18首先获取温度检测部70(参照图2)的检测结果(步骤S301)。如上所述,温度检测部70检测晶圆W的上表面整体的温度。因而,温度检测部70的检测结果示出晶圆W面内的温度分布。接下来,控制部18基于温度检测部70的检测结果来判断晶圆W面内的温度之差是否小于阈值(步骤S302)。
在步骤S302中,在判断为晶圆W面内的温度之差超过阈值的情况下(步骤S302、否),控制部18对移动机构64进行控制而使阻挡部61上升(步骤S303)。此时的阻挡部61的上升量也可以为预先决定的量。此外,也可以在存储部19预先存储高度调整信息,该高度调整信息是将晶圆W面内的温度之差与阻挡部61的上升量关联起来的高度调整信息,控制部18也可以使用该高度调整信息决定阻挡部61的上升量。
在步骤S303的处理结束的情况下、或者在步骤S302中,在判断为晶圆W面内的温度之差小于阈值的情况下(步骤S302、是),控制部18判断蚀刻处理是否已经结束(步骤S304)。在该处理中,在蚀刻处理未结束的情况下(步骤S304、否),控制部18使处理向步骤S301返回。另一方面,在蚀刻处理已经结束的情况下(步骤S304、是),控制部18结束高度调整处理。
这样,也可以是,控制部18与被温度检测部70检测出的晶圆W的面内温度的分布相对应地对移动机构64进行控制而调整阻挡部61的高度。由此,例如,在晶圆W的面内温度的分布存在偏差的情况下,升高阻挡部61的高度,从而能够降低该偏差。即、能够提高蚀刻液的温度的面内均匀性。因而,能够提高基板处理的面内均匀性。
(第4实施方式)
在第4实施方式中,对阻挡机构的変形例进行说明。图18是表示第4实施方式的第1变形例的阻挡机构的结构的图。
如图18所示,第1变形例的阻挡机构60A在阻挡部61A的内部具备加热部613。加热部613设置在阻挡部61A的整周上,在整周上对阻挡部61A进行加热。控制部18在蚀刻处理中,例如,对加热部613进行控制而加热阻挡部61A,以使阻挡部61A的温度与向晶圆W供给的蚀刻液的温度相同。由此,抑制蚀刻液的温度因向阻挡部61A的吸热而降低,因此能够提高蚀刻液的温度的面内均匀性。因而,能够提高基板处理的面内均匀性。
另外,加热部613不需要必须在阻挡部61A的整周上设置。例如,也可以是,阻挡部61A为内置有沿着阻挡部61A的周向隔开间隔配置的多个加热部的结构。此外,控制部18不需要必须使阻挡部61A的温度与蚀刻液的温度一致。也可以是,例如控制部18对加热部613进行控制,以使阻挡部61A的温度比蚀刻液的温度高。在该情况下,能够使晶圆W的外周部处的蚀刻液的温度比中心部处的蚀刻液的温度高。由此,不用进行第2实施方式的局部蚀刻处理,就能够使外周部处的膜厚比中心部处的膜厚厚的晶圆W的膜厚均匀化。
图19是示出第4实施方式的第2变形例的阻挡机构的结构的图。如图19所示,第2变形例的阻挡机构60B的阻挡部61B在内周面具备用于喷出蚀刻液的多个喷出口615。多个喷出口615沿着阻挡部61B的周向隔开间隔排列配置。此外,阻挡部61B在内部具备向多个喷出口615供给蚀刻液的供给路616。供给路616例如设置在阻挡部61B的整周上。蚀刻液供给源47a经由流量调整器65、加热部66以及阀67与供给路616连接。
自蚀刻液供给源47a供给来的蚀刻液被加热部66加热为例如与自喷嘴41供给来的蚀刻液相同的温度,自多个喷出口615向晶圆W的外周部供给。
控制部18在蚀刻处理中,通过打开阀46a以及阀67,从而进行蚀刻液自喷嘴41向晶圆W的中心部的供给以及进行蚀刻液自多个喷出口615向晶圆W的外周部的供给。
在蚀刻处理中,自喷嘴41供给到晶圆W的中心部的蚀刻液直到到达晶圆W的外周部会产生时间滞后。因此,由于该时间滞后,可能使蚀刻量在晶圆W的中心部和外周部之间产生差异。
与此相对,如第2变形例那样,与喷嘴41一起也自阻挡部61B供给蚀刻液,从而与仅进行来自于喷嘴41的供给的情况相比较,能够使蚀刻液以更短时间积存在晶圆W上。因而,能够抑制在晶圆W上积存蚀刻液为止的期间所产生的基板处理的面内均匀性的降低。此外,进行蚀刻液向晶圆W的中心部的供给,以及进行蚀刻液向晶圆W的外周部的供给,从而蚀刻量在晶圆W的中心部和外周部之间能够难以产生差异。
此外,使加热了的蚀刻液在供给路616流动,从而能够对阻挡部61B进行加热。由此,与第1变形例的阻挡部61A相同,能够抑制因向阻挡部61B的吸热而产生的蚀刻液的温度降低。
另外,也可以是,控制部18在开始蚀刻处理之后、经过了预定時間的情况下,关闭阀67从而仅停止来自于阻挡部61B的蚀刻液的供给。也可以是,例如控制部18在开始蚀刻处理之后、在蚀刻液自阻挡部61B的上端溢出之前,停止来自于阻挡部61B的蚀刻液的供给。
以短时间在晶圆W上积存蚀刻液的方法并不限定于上述的例子。例如,也可以是,控制部18在开始蚀刻处理之后、在溢出蚀刻液之前的期间,以第1流量自喷嘴41喷出蚀刻液,之后,以比第1流量少的第2流量自喷嘴41喷出蚀刻液。在晶圆W上积存蚀刻液的期间,以大流量自喷嘴41喷出蚀刻液,从而能够以短时间在晶圆W上积存蚀刻液。
此外,也可以是,控制部18在开始蚀刻处理之后、在溢出蚀刻液之前的期间,对旋转升降机构43进行控制而使喷嘴41在晶圆W的中心部和外周部之间持续移动。由此,能够抑制晶圆W的中心部和外周部之间的蚀刻量的偏差。
此外,也可以是,在臂42设置沿着晶圆W的径向设有多个喷出口的喷嘴(杆状喷嘴),向晶圆W的包含中心部以及外周部在内的多个位置同时喷出蚀刻液。由此,能够在晶圆W上及早积存蚀刻液,并且,能够抑制晶圆W的中心部和外周部之间的蚀刻量的偏差。设置多个供给部40且自各供给部40的喷嘴41向晶圆W的包含中心部以及外周部在内的多个位置同时喷出蚀刻液的情况也是同样的。
此外,也可以是,控制部18在开始蚀刻处理之后,例如在蚀刻液扩展至晶圆W的整面期间,对驱动部33进行控制而以第1转速使晶圆W旋转,之后,对驱动部33进行控制而以比第1转速慢的第2转速使晶圆W旋转。这样,通过以高速使晶圆W旋转,从而能够使蚀刻液及早在晶圆W的整面扩展。由此,能够抑制晶圆W的中心部和外周部之间的蚀刻量的偏差。
图20是示出第4实施方式的第3变形例的阻挡机构的结构的图。如图20所示,第3变形例的阻挡机构60C的阻挡部61C具备多个(在此为两个)分割体61C1、61C2。各分割体61C1、61C2具有俯视时半圆形状。此外,阻挡机构60C具备使分割体61C1移动的分割体移动机构661以及使分割体61C2移动的分割体移动机构662。分割体移动机构661、662使分割体61C1、61C2在如下两个状态之间移动:分割体61C1、61C2彼此合体而形成圆筒状的阻挡部61C的状态以及使阻挡部61C分割为多个分割体61C1、61C2的状态。在阻挡部61C分割为多个分割体61C1、61C2的状态下,多个分割体61C1、61C2配置在例如送入处理时、送出处理时不与晶圆W干涉的位置。由此,能够防止晶圆W的送入送出被阻挡部61阻碍。
(其他实施方式)
也可以是,阻挡机构60、60A~60C具备使支柱部63(参照图2)旋转的旋转机构。在该情况下,阻挡机构60、60A~60C使用旋转机构使支柱部63旋转,从而能够使阻挡部61、61A~61C绕与晶圆W的旋转轴线相同的旋转轴线旋转。
此外,在该情况下,也可以是,控制部18在蚀刻处理中,例如,使阻挡部61、61A~61C向与晶圆W的旋转方向相同的方向旋转。由此,例如,能够抑制蚀刻液的飞散。此外,也可以是,在蚀刻处理中,控制部18例如使阻挡部61、61A~61C向与晶圆W的旋转方向相反的方向旋转。由此,晶圆W的外周部附近处的蚀刻液的流动紊乱,从而与晶圆W的中心部处的蚀刻量相比较能够提高外周部处的蚀刻量。
在上述的各实施方式中,作为处理液的一例列举蚀刻液进行了说明,但处理液不限定于蚀刻液。例如,也可以是,处理液为用于去除颗粒的SC1(氨气/过氧化氢/水混合物)或SC2(盐酸/过氧化氢/水混合物)等化学溶液。此外,也可以是,处理液为用于干燥处理的IPA(异丙醇)等有机溶剂。
如上所述,实施方式的基板处理装置(作为一例为处理单元16)具备载置部(作为一例为旋转板31)、供给部40、阻挡部61、61A~61C以及移动机构64。载置部载置基板(作为一例为晶圆W)。供给部40对载置于载置部的基板供给处理液(作为一例为蚀刻液)。阻挡部61、61A~61C包围载置于载置部的基板,阻止供给至基板的处理液自基板流出。移动机构64对阻挡部的高度进行变更。
利用阻挡部61、61A~61C阻止供给至基板的处理液自基板流出,从而能够使在基板上形成的处理液的液膜增厚。由此,处理液的温度在基板的中心部和外周部之间难以产生差异,因此能够提高基板的面内的处理液的温度均匀性。因而,根据实施方式的基板处理装置,能够提高基板处理的面内均匀性。
此外,也可以是,阻挡部具备与供给至基板的处理液接触的第1构件611以及设于比第1构件611靠外周侧的第2构件612。在该情况下,也可以是,第1构件611为与第2构件612相比较导热率较高的构件。
使用导热率较高的构件作为第1构件611,从而能够使与处理液接触的第1构件611的温度及早调整为处理液的温度。因而,能够抑制例如由于第1构件611的温度低于处理液的温度的状态长时间持续而使处理液的温度在基板的外周部和中央部之间产生差异。此外,使用导热率较低的构件作为第2构件612,从而能够抑制被处理液加热的阻挡部61的热量向大气释放。因而,能够抑制例如由于阻挡部61的温度降低而使处理液的温度在基板的外周部和中央部之间产生差异。
此外,也可以是,实施方式的基板处理装置具备加热阻挡部61A的加热部613。由此,抑制因向阻挡部61A的吸热而产生的处理液的温度降低,因此能够提高处理液的温度的面内均匀性。因而,能够谋求进一步提高基板处理的面内均匀性。
此外,也可以是,阻挡部61B为在内周面具备用于喷出处理液的多个喷出口615的结构。与供给部40一起也自阻挡部61B供给处理液,从而与仅进行来自于供给部40的供给的情况相比较,能够使处理液以更短时间积存在基板上。因而,能够抑制在基板上积存处理液的期间所产生的基板处理的面内均匀性的降低。
此外,也可以是,实施方式的基板处理装置还具备控制移动机构64的控制部18。在该情况下,也可以是,控制部18对移动机构64进行控制,从而将阻挡部61、61A~61C的高度调整为与处理液的种类相对应的高度。由此,能够适当地抑制因汽化热导致的处理液的温度降低。
此外,也可以是,实施方式的基板处理装置还具备控制移动机构64的控制部18。在该情况下,也可以是,控制部18对移动机构64进行控制,从而将阻挡部61、61A~61C的高度调整为与处理液的温度相对应的高度。具体而言,也可以是,在处理液的温度较高的情况下,与处理液的温度较低的情况相比较,控制部18使阻挡部61、61A~61C的高度升高。由此,能够适当地抑制因汽化热导致的处理液的温度降低。
此外,也可以是,实施方式的基板处理装置还具备控制移动机构64的控制部18以及检测基板的面内温度的温度检测部70。在该情况下,也可以是,控制部18在自供给部40对载置于载置部的基板供给处理液期间,与被温度检测部70检测出的基板的面内温度的分布相对应地对移动机构64进行控制而调整阻挡部61、61A~61C的高度。
由此,例如,在基板的面内温度的分布存在偏差的情况下,使阻挡部61、61A~61C的高度升高,从而能够降低该偏差。即,能够提高处理液的温度的面内均匀性。因而,能够提高基板处理的面内均匀性。
此外,也可以是,在实施方式的基板处理装置中,进行局部供给工序(作为一例为步骤S202的局部蚀刻处理)。局部供给工序在载置工序(作为一例为步骤S101、S201的送入处理)之后、包围工序(作为一例为使步骤S102、S203的阻挡部61、61A~61C上升的处理)之前,向基板的一部分供给处理液。由此,能够提高基板处理的面内均匀性,并且也能够提高基板处理后的膜厚均匀性。
此外,也可以是,在实施方式的基板处理装置中,进行流出工序(作为一例为在步骤S104、S205使阻挡部61、61A~61C下降的处理)以及冲洗工序(作为一例为步骤S105、S206的冲洗处理)。流出工序在供给工序(作为一例为步骤S103、S204的蚀刻处理)之后,使阻挡部61、61A~61C移动至不阻止处理液自基板流出的位置,从而使处理液自基板流出。冲洗液在流出工序之后,对载置于载置部的基板供给冲洗液。
这样,在供给工序结束之后使阻挡部61下降,从而能够在短时间使大量处理液自基板流出,该大量处理液是自基板的流出被阻挡部61阻止了的大量处理液。因而,能够及早行进至冲洗工序。
此外,也可以是,在实施方式的基板处理装置中,在流出工序之后、冲洗工序之前,进行使阻挡部61、61A~61C移动并利用阻挡部61、61A~61C包围载置于载置部的基板的再包围工序。由此,能够利用冲洗液冲洗附着于阻挡部61的处理液。
此外,在上述的各实施方式中,作为处理液的一例,举例加热后的蚀刻液进行了说明,但处理液不需要必须被加热。即,也可以为常温的处理液。
应该认为此次所公开的实施方式在全部的点均是例示,并非限制性的。实质上,上述的实施方式能够以多种形态具体体现。此外,上述的实施方式在不脱离权利要求书及其主旨的前提下,也可以被以各种形态省略、置换、变更。
Claims (12)
1.一种基板处理装置,其中,
该基板处理装置具备:
载置部,其用于载置基板;
供给部,其用于对载置于所述载置部的所述基板供给处理液;
阻挡部,其包围载置于所述载置部的所述基板,该阻挡部阻止供给至所述基板的所述处理液自所述基板流出;以及
移动机构,其用于对所述阻挡部的高度进行变更。
2.根据权利要求1所述的基板处理装置,其中,
所述阻挡部具备:
第1构件,其与供给至所述基板的所述处理液接触;以及
第2构件,其设于比所述第1构件靠外周侧的位置,
所述第1构件的导热率比所述第2构件的导热率高。
3.根据权利要求1或2所述的基板处理装置,其中,
该基板处理装置具备对所述阻挡部进行加热的加热部。
4.根据权利要求1~3中任一项所述的基板处理装置,其中,
所述阻挡部在内周面具备用于喷出所述处理液的多个喷出口。
5.根据权利要求1~3中任一项所述的基板处理装置,其中,
该基板处理装置还具备对所述移动机构进行控制的控制部,
所述控制部对所述移动机构进行控制,从而将所述阻挡部的高度调整为与所述处理液的种类相对应的高度。
6.根据权利要求1~3中任一项所述的基板处理装置,其中,
该基板处理装置还具备对所述移动机构进行控制的控制部,
所述控制部对所述移动机构进行控制,从而将所述阻挡部的高度调整为与所述处理液的温度相对应的高度。
7.根据权利要求6所述的基板处理装置,其中,
在所述处理液的温度较高的情况下,与所述处理液的温度较低的情况相比较,所述控制部使所述阻挡部的高度升高。
8.根据权利要求1~3中任一项所述的基板处理装置,其中,
该基板处理装置还具备:
控制部,其对所述移动机构进行控制;以及
温度检测部,其对所述基板的面内温度进行检测,
在自所述供给部对载置于所述载置部的所述基板供给所述处理液的期间,所述控制部与被所述温度检测部检测出的所述基板的面内温度的分布相对应地对所述移动机构进行控制而调整所述阻挡部的高度。
9.一种基板处理方法,其中,
该基板处理方法包含:
载置工序,将基板载置于载置部;
包围工序,在所述载置工序之后,利用阻挡部包围载置于所述载置部的所述基板;以及
供给工序,在所述包围工序之后,对载置于所述载置部的所述基板供给处理液,利用所述阻挡部阻止供给至所述基板的所述处理液自所述基板流出。
10.根据权利要求9所述的基板处理方法,其中,
该基板处理方法还包含局部供给工序,在所述载置工序之后、所述包围工序之前,向所述基板的一部分供给所述处理液。
11.根据权利要求9或10所述的基板处理方法,其中,
该基板处理方法还包含:
流出工序,在所述供给工序之后,使所述阻挡部向不阻止所述处理液自所述基板流出的位置移动,从而使所述处理液自所述基板流出;以及
冲洗工序,在所述流出工序之后,对载置于所述载置部的所述基板供给冲洗液。
12.根据权利要求11所述的基板处理方法,其中,
该基板处理方法还包含再包围工序,在所述流出工序之后、所述冲洗工序之前,使所述阻挡部移动,利用所述阻挡部包围载置于所述载置部的所述基板。
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CN111293065B (zh) | 2024-04-09 |
JP7169865B2 (ja) | 2022-11-11 |
US20200185261A1 (en) | 2020-06-11 |
KR20200071015A (ko) | 2020-06-18 |
JP2020096012A (ja) | 2020-06-18 |
US11211281B2 (en) | 2021-12-28 |
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