JP2011108968A5 - - Google Patents

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JP2011108968A5
JP2011108968A5 JP2009264543A JP2009264543A JP2011108968A5 JP 2011108968 A5 JP2011108968 A5 JP 2011108968A5 JP 2009264543 A JP2009264543 A JP 2009264543A JP 2009264543 A JP2009264543 A JP 2009264543A JP 2011108968 A5 JP2011108968 A5 JP 2011108968A5
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distribution
calculation
charged particle
calculating
unit
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JP2009264543A
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JP2011108968A (ja
JP5525798B2 (ja
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Priority claimed from JP2009264543A external-priority patent/JP5525798B2/ja
Priority to JP2009264543A priority Critical patent/JP5525798B2/ja
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Priority to TW099139403A priority patent/TWI431655B/zh
Priority to US12/948,178 priority patent/US20110121208A1/en
Priority to KR1020100115368A priority patent/KR101252354B1/ko
Publication of JP2011108968A publication Critical patent/JP2011108968A/ja
Priority to US13/647,691 priority patent/US20130032707A1/en
Publication of JP2011108968A5 publication Critical patent/JP2011108968A5/ja
Publication of JP5525798B2 publication Critical patent/JP5525798B2/ja
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JP2009264543A 2009-11-20 2009-11-20 荷電粒子ビーム描画装置およびその帯電効果補正方法 Expired - Fee Related JP5525798B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009264543A JP5525798B2 (ja) 2009-11-20 2009-11-20 荷電粒子ビーム描画装置およびその帯電効果補正方法
TW099139403A TWI431655B (zh) 2009-11-20 2010-11-16 Charge particle beam drawing device and its charging effect correction method
US12/948,178 US20110121208A1 (en) 2009-11-20 2010-11-17 Charged particle beam drawing apparatus and electrical charging effect correction method thereof
KR1020100115368A KR101252354B1 (ko) 2009-11-20 2010-11-19 하전 입자 빔 묘화 장치 및 그 대전 효과 보정 방법
US13/647,691 US20130032707A1 (en) 2009-11-20 2012-10-09 Charged particle beam drawing apparatus and electrical charging effect correction method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009264543A JP5525798B2 (ja) 2009-11-20 2009-11-20 荷電粒子ビーム描画装置およびその帯電効果補正方法

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JP2011108968A JP2011108968A (ja) 2011-06-02
JP2011108968A5 true JP2011108968A5 (enExample) 2012-11-29
JP5525798B2 JP5525798B2 (ja) 2014-06-18

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JP2009264543A Expired - Fee Related JP5525798B2 (ja) 2009-11-20 2009-11-20 荷電粒子ビーム描画装置およびその帯電効果補正方法

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US (2) US20110121208A1 (enExample)
JP (1) JP5525798B2 (enExample)
KR (1) KR101252354B1 (enExample)
TW (1) TWI431655B (enExample)

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JP5636238B2 (ja) 2010-09-22 2014-12-03 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
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JP6295035B2 (ja) * 2013-07-10 2018-03-14 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP6147642B2 (ja) * 2013-10-11 2017-06-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置
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JP6190254B2 (ja) * 2013-12-04 2017-08-30 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
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JP6951174B2 (ja) * 2016-09-28 2021-10-20 株式会社ニューフレアテクノロジー 電子ビーム装置及び電子ビームの位置ずれ補正方法
JP6951922B2 (ja) * 2016-09-28 2021-10-20 株式会社ニューフレアテクノロジー 荷電粒子ビーム装置及び荷電粒子ビームの位置ずれ補正方法
US10325757B2 (en) 2017-01-27 2019-06-18 Ims Nanofabrication Gmbh Advanced dose-level quantization of multibeam-writers
US10522329B2 (en) 2017-08-25 2019-12-31 Ims Nanofabrication Gmbh Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus
US11569064B2 (en) 2017-09-18 2023-01-31 Ims Nanofabrication Gmbh Method for irradiating a target using restricted placement grids
US10651010B2 (en) 2018-01-09 2020-05-12 Ims Nanofabrication Gmbh Non-linear dose- and blur-dependent edge placement correction
US10840054B2 (en) 2018-01-30 2020-11-17 Ims Nanofabrication Gmbh Charged-particle source and method for cleaning a charged-particle source using back-sputtering
JP7026575B2 (ja) 2018-05-22 2022-02-28 株式会社ニューフレアテクノロジー 電子ビーム照射方法、電子ビーム照射装置、及びプログラム
JP7367695B2 (ja) * 2018-11-09 2023-10-24 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置、荷電粒子ビーム描画方法及びプログラム
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
JP7159970B2 (ja) * 2019-05-08 2022-10-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
KR20210099516A (ko) 2020-02-03 2021-08-12 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
JP7628114B2 (ja) * 2020-04-27 2025-02-07 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置
EP4095882A1 (en) 2021-05-25 2022-11-30 IMS Nanofabrication GmbH Pattern data processing for programmable direct-write apparatus
US12154756B2 (en) 2021-08-12 2024-11-26 Ims Nanofabrication Gmbh Beam pattern device having beam absorber structure

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