JP2016100445A5 - - Google Patents

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Publication number
JP2016100445A5
JP2016100445A5 JP2014235901A JP2014235901A JP2016100445A5 JP 2016100445 A5 JP2016100445 A5 JP 2016100445A5 JP 2014235901 A JP2014235901 A JP 2014235901A JP 2014235901 A JP2014235901 A JP 2014235901A JP 2016100445 A5 JP2016100445 A5 JP 2016100445A5
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JP
Japan
Prior art keywords
proximity effect
charged particle
particle beam
pattern
calculating
Prior art date
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Application number
JP2014235901A
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English (en)
Japanese (ja)
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JP6456118B2 (ja
JP2016100445A (ja
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Priority to JP2014235901A priority Critical patent/JP6456118B2/ja
Priority claimed from JP2014235901A external-priority patent/JP6456118B2/ja
Priority to US14/942,164 priority patent/US9484185B2/en
Publication of JP2016100445A publication Critical patent/JP2016100445A/ja
Publication of JP2016100445A5 publication Critical patent/JP2016100445A5/ja
Application granted granted Critical
Publication of JP6456118B2 publication Critical patent/JP6456118B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014235901A 2014-11-20 2014-11-20 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 Expired - Fee Related JP6456118B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2014235901A JP6456118B2 (ja) 2014-11-20 2014-11-20 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US14/942,164 US9484185B2 (en) 2014-11-20 2015-11-16 Charged particle beam writing apparatus, and charged particle beam writing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014235901A JP6456118B2 (ja) 2014-11-20 2014-11-20 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Publications (3)

Publication Number Publication Date
JP2016100445A JP2016100445A (ja) 2016-05-30
JP2016100445A5 true JP2016100445A5 (enExample) 2017-11-16
JP6456118B2 JP6456118B2 (ja) 2019-01-23

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ID=56010914

Family Applications (1)

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JP2014235901A Expired - Fee Related JP6456118B2 (ja) 2014-11-20 2014-11-20 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法

Country Status (2)

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US (1) US9484185B2 (enExample)
JP (1) JP6456118B2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6484491B2 (ja) * 2015-04-10 2019-03-13 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
US10157723B2 (en) * 2016-08-03 2018-12-18 Nuflare Technology, Inc. Multi charged particle beam writing apparatus and method of adjusting the same
JP6834429B2 (ja) * 2016-08-03 2021-02-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びその調整方法
JP7031516B2 (ja) * 2018-07-06 2022-03-08 株式会社ニューフレアテクノロジー 照射量補正量の取得方法、荷電粒子ビーム描画方法、及び荷電粒子ビーム描画装置
JP7159970B2 (ja) * 2019-05-08 2022-10-25 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画方法及び荷電粒子ビーム描画装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079392A (ja) * 2003-09-01 2005-03-24 Toshiba Mach Co Ltd 描画データ作成方法
JP5063071B2 (ja) * 2006-02-14 2012-10-31 株式会社ニューフレアテクノロジー パタン作成方法及び荷電粒子ビーム描画装置
KR101244525B1 (ko) * 2010-04-20 2013-03-18 가부시키가이샤 뉴플레어 테크놀로지 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법
JP5441806B2 (ja) * 2010-04-20 2014-03-12 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2012019066A (ja) * 2010-07-08 2012-01-26 Jeol Ltd 荷電粒子ビーム描画方法及び装置
JP2012069667A (ja) * 2010-09-22 2012-04-05 Nuflare Technology Inc 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2013115373A (ja) * 2011-11-30 2013-06-10 Nuflare Technology Inc 荷電粒子ビーム描画装置および荷電粒子ビーム描画方法
JP6147528B2 (ja) * 2012-06-01 2017-06-14 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置

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