WO2020095743A1 - 荷電粒子ビーム描画装置、荷電粒子ビーム描画方法及びプログラム - Google Patents
荷電粒子ビーム描画装置、荷電粒子ビーム描画方法及びプログラム Download PDFInfo
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- WO2020095743A1 WO2020095743A1 PCT/JP2019/042111 JP2019042111W WO2020095743A1 WO 2020095743 A1 WO2020095743 A1 WO 2020095743A1 JP 2019042111 W JP2019042111 W JP 2019042111W WO 2020095743 A1 WO2020095743 A1 WO 2020095743A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/153—Electron-optical or ion-optical arrangements for the correction of image defects, e.g. stigmators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20228—Mechanical X-Y scanning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31769—Proximity effect correction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0277—Electrolithographic processes
Definitions
- the present invention relates to a charged particle beam drawing apparatus, a charged particle beam drawing method and a program.
- a reduction projection type exposure apparatus is used, and a high-precision original image pattern formed on quartz (a mask, or especially a stepper or scanner is also called a reticle). .) Is reduced and transferred onto the wafer.
- a high-precision original image pattern is drawn by an electron beam drawing device, and so-called electron beam lithography technology is used.
- a drawing device has been proposed that uses a charging effect correction method that calculates a correction amount of a beam irradiation position by obtaining a charge amount distribution (for example, see Patent Documents 1 and 2).
- a charging effect correction method that calculates a correction amount of a beam irradiation position by obtaining a charge amount distribution
- An object of the present invention is to provide a charged particle beam drawing apparatus, a charged particle beam drawing method, and a program that correct a positional deviation due to a charging phenomenon.
- a charged particle beam drawing apparatus is a charged particle beam drawing apparatus that draws a pattern on a substrate on a stage by deflecting a charged particle beam by a deflector, wherein the drawing area of the substrate is formed into a mesh shape.
- a pattern density distribution calculation unit that virtually divides and calculates a pattern density distribution indicating the arrangement ratio of the pattern for each mesh region, and a dose that calculates a dose amount distribution indicating the dose amount for each mesh region using the pattern density distribution
- a dose distribution calculation unit using the pattern density distribution and the dose distribution, a dose distribution calculation unit that calculates the dose distribution of the charged particle beam emitted from the emission unit and applied to the substrate, Convolution products of the distribution center and the distribution functions of a plurality of fogged charged particles having different influence radii of the fog effect and the dose distribution, respectively.
- the fog charged particle amount distribution calculation unit that calculates a plurality of fog charged particle amount distributions
- the pattern density distribution, the dose amount distribution, and the irradiation amount distribution are used to calculate the charge amount distribution by direct charging.
- a charge amount distribution calculation unit that calculates a charge amount distribution due to a plurality of fog electrifications by using the plurality of fog charged particle amount distributions, and a charge amount distribution due to the direct electrification and a plurality of fog electrification charge distributions
- a position deviation amount calculation unit that calculates the position deviation amount of the drawing position, a correction unit that corrects the irradiation position using the position deviation amount, and a drawing unit that irradiates the charged particle beam to the corrected irradiation position. Be prepared.
- the positional deviation due to the charging phenomenon can be corrected with high accuracy.
- FIG. 9A is a diagram showing an example of a drawing result
- FIG. 9A is a diagram showing an example of a drawing result
- 9B is a diagram showing a drawn pattern.
- 10A is a diagram showing an example of a drawing result according to the comparative example
- FIG. 10B is a diagram showing an example of a drawing result according to the same embodiment.
- 11A is a graph showing a drawing position error according to a comparative example
- FIG. 11B is a graph showing a drawing position error according to the same embodiment.
- 9 is a flowchart illustrating a drawing method according to another embodiment.
- 13A and 13B are diagrams showing examples of evaluation patterns.
- 14a to 14c are diagrams showing examples of drawing results.
- 15a to 15c are graphs showing low energy fog electron charge amount distributions.
- the charged particle beam is not limited to the electron beam, and may be an ion beam or the like.
- FIG. 1 is a schematic configuration diagram of a drawing device according to an embodiment.
- the drawing apparatus 100 shown in FIG. 1 includes a drawing unit 150 and a control unit 160.
- the drawing device 100 is an example of an electron beam drawing device.
- the drawing unit 150 includes the electron lens barrel 1 and the drawing chamber 14.
- An electron gun 5, an illumination lens 7, a first aperture 8, a projection lens 9, a shaping deflector 10, a second aperture 11, an objective lens 12, an objective deflector 13, and an electrostatic lens 15 are provided in the electron barrel 1. Will be placed.
- XY stage 3 is placed in drawing room 14.
- the substrate 2 to be drawn is arranged.
- the substrate 2 includes a photomask used for exposure in semiconductor manufacturing, a semiconductor wafer forming a semiconductor device, and the like. Further, the photomask to be drawn includes mask blanks in which nothing has been drawn yet. At the time of drawing, a resist layer which is exposed to an electron beam is formed on the substrate.
- a stage position measuring mirror 4 is arranged at a position different from the position where the substrate 2 is arranged.
- the control unit 160 includes control computers 110 and 120, a stage position detection unit 45, a stage control unit 46, a deflection control circuit 130, a memory 142, and storage devices 21 and 140 such as a magnetic disk device.
- the deflection control circuit 130 is connected to the shaping deflector 10 and the objective deflector 13.
- the control computer 110 includes a drawing control unit 30, a pattern density distribution calculation unit 31, a dose amount distribution calculation unit 32, an irradiation amount distribution calculation unit 33, a fog electron amount distribution calculation unit 34, a charge amount distribution calculation unit 35, and a drawing elapsed time calculation. It has the functions of the unit 36, the cumulative time calculation unit 37, and the positional deviation amount distribution calculation unit 38.
- Each unit of the control computer 110 may be configured by hardware including an electric circuit, a computer, a processor, a circuit board, a quantum circuit, a semiconductor device, or the like, or may be configured by software. When it is configured by software, a program that realizes the function may be stored in a recording medium and read and executed by a computer including a processor. Input data and calculation results of each unit of the control computer 110 are stored in the memory 142.
- the control computer 120 has the functions of the shot data generation unit 41 and the positional deviation correction unit 42.
- the shot data generation unit 41 and the positional deviation correction unit 42 may be configured by software or hardware.
- the deflection control circuit 130 has the functions of the shaping deflector control unit 43 and the objective deflector control unit 44.
- the shaping deflector control unit 43 and the objective deflector control unit 44 may be configured by software or hardware.
- the storage device 140 stores drawing data (layout data) that defines a plurality of drawn graphic patterns.
- the electron beam 6 emitted from the electron gun 5 illuminates the entire first aperture 8 having a rectangular hole by the illumination lens 7.
- the electron beam 6 is first shaped into a rectangle.
- the electron beam 6 of the first aperture image that has passed through the first aperture 8 is projected onto the second aperture 11 by the projection lens 9.
- the position of the first aperture image on the second aperture 11 is deflected by the shaping deflector 10 controlled by the shaping deflector controller 43, and the beam shape and size can be changed (variable shaping).
- the electron beam 6 of the second aperture image that has passed through the second aperture 11 is focused by the objective lens 12 and is deflected by, for example, an electrostatic deflector (objective deflector 13) controlled by the objective deflector control unit 44. Then, the desired position of the substrate 2 on the XY stage 3 movably arranged is irradiated.
- the XY stage 3 is drive-controlled by the stage controller 46.
- the position of the XY stage 3 is detected by the stage position detector 45.
- the stage position detection unit 45 includes, for example, a laser length measuring device that irradiates a laser on the mirror 4 and measures the position based on the interference between the incident light and the reflected light.
- the electrostatic lens 15 dynamically corrects the focal position of the electron beam 6 in accordance with the unevenness of the surface of the substrate 2 (dynamic focus).
- FIG. 2 is a diagram for explaining how the stage moves.
- the XY stage 3 When drawing on the substrate 2, the XY stage 3 is continuously moved in the X direction, for example.
- the drawing area is virtually divided into a plurality of strip-shaped stripe areas (SR) with a deflectable width of the electron beam 6.
- the drawing process is performed in stripe area units.
- the movement of the XY stage 3 in the X direction is, for example, continuous movement, and at the same time, the shot position of the electron beam 6 also follows the movement of the stage. Drawing time can be shortened by continuously moving.
- the XY stage 3 is stepwise moved in the Y direction to perform the drawing operation of the next stripe area in the X direction (reverse direction).
- the movement time of the XY stage 3 can be shortened by advancing the drawing operation of each stripe region in a meandering manner.
- the drawing apparatus 100 In processing the layout data (drawing data), the drawing apparatus 100 virtually divides the drawing area into a plurality of strip-shaped frame areas and performs data processing for each frame area. When multiple exposure is not performed, the frame area and the stripe area are usually the same area. When multiple exposure is performed, the frame area and the stripe area are displaced according to the multiplicity. In this way, the drawing area of the substrate 2 is virtually divided into a plurality of frame areas (stripe areas) serving as drawing unit areas, and the drawing unit 150 draws in each frame area (stripe area).
- the fog electron amount distribution is calculated based on the irradiation amount distribution of the electron beam applied to the substrate 2 and the spread distribution of the fog electrons spreading from the irradiation area where the electron beam is irradiated to the non-irradiation area.
- the charge amount distribution in the irradiated region and the charge amount distribution in the non-irradiated region were calculated using the irradiation amount distribution and the fog electron amount distribution.
- the position deviation amount distribution of the electron beam on the substrate 2 is calculated from the charge amount distribution in the irradiation region and the charge amount distribution in the non-irradiation region to correct the beam irradiation position.
- the inventors of the present invention can correct the deviation of the irradiation position of the beam with high accuracy based on the model in which the center position of the fog electron distribution and the influence radius of the fog effect are different depending on the energy of the fog electron. I found it.
- FIG. 3 a is a diagram for explaining a mechanism in which a plurality of different fog electron distributions are assumed to exist in the present embodiment.
- the surface of the substrate 2 is held at the ground potential.
- a negative potential is applied to the electrostatic lens 15 arranged above the substrate 2. Therefore, an electric field in which lines of electric force extend from the surface of the substrate 2 toward the electrostatic lens 15 (in the z direction) is generated between the surface of the substrate 2 and the height surface of the electrostatic lens 15.
- a potential difference is generated at the left and right (x direction) positions on the substrate 2, and a horizontal electric field is generated. ..
- the electron beam 6 (e) itself has high energy, so it is not bent by this electric field. Further, the fog electrons, which are elastically scattered by the substrate 2 and the ceiling plate of the drawing chamber 14 and land on the substrate 2, have high energy and therefore do not bend in this electric field as shown in FIG. 3b.
- the secondary electrons generated by the beam irradiation on the substrate 2 and repelled to the substrate 2 by the electric field in the z direction by the electrostatic lens have low energy, the secondary electrons are affected by the electric field in the left and right directions as shown in FIG. 4a. Received and shifted to the positive potential side. As a result, as shown in FIG. 4b, the distribution center of the fog electron F is displaced from the center of the irradiation area E.
- the present inventors utilize such a mechanism, as shown in FIG. 5a, by direct charging R1 by the irradiated electron beam (e) and elastic scattering on the substrate 2 and the top of the drawing chamber 14.
- a charging model including a high-energy fog electronic charge R2 that pours onto the substrate 2 and a low-energy fog electronic charge R3 that pours onto the substrate 2 so as to be repelled by the potential of the electrostatic lens 15 generated by beam irradiation to the substrate 2. It was found that the deviation of the irradiation position of the beam can be corrected with high accuracy by using.
- FIG. 5B shows an example in which different fog electron charges R3_1 to R3_3 are generated due to the difference in fog electron energy.
- the charging effect correction is performed using a plurality of fog electron amount distributions.
- FIG. 6 is a flowchart illustrating the drawing method according to this embodiment.
- This drawing method includes a pattern area density distribution calculation step (step S100), a dose distribution calculation step (step S102), a dose distribution calculation step (step S104), and a fog electron quantity distribution calculation step (step S106).
- the pattern density distribution calculation unit 31 reads the drawing data from the storage device 140 and virtually divides the drawing area (or frame area) into a mesh with a predetermined size (grid size). For each mesh area, a pattern area density ⁇ (x, y) indicating the arrangement ratio of the graphic pattern defined in the drawing data is calculated. Then, the distribution ⁇ (x, y) of the pattern density for each mesh area is created.
- the dose amount distribution calculation unit 32 calculates the dose amount distribution D (x, y) for each mesh region using the pattern density distribution ⁇ (x, y). For the calculation of the dose amount, it is preferable to perform proximity effect correction using backscattered electrons.
- the dose amount D can be defined by the following equation (1).
- D D 0 ⁇ ⁇ (1 + 2 ⁇ ⁇ ) / (1 + 2 ⁇ ⁇ ⁇ ⁇ ) ⁇
- D 0 is the reference dose amount
- ⁇ is the backscattering rate
- the reference dose amount D 0 and the backscattering rate ⁇ are set by the user of the drawing apparatus 100.
- the backscattering rate ⁇ can be set in consideration of the acceleration voltage of the electron beam 6, the resist film thickness of the substrate 2, the type of the underlying substrate, the process conditions (for example, PEB conditions and development conditions), and the like.
- the dose distribution calculation unit 33 multiplies each mesh value of the pattern density distribution ⁇ (x, y) by the corresponding mesh value of the dose distribution D (x, y). By doing so, the dose distribution E (x, y) (also referred to as “irradiation intensity distribution”) for each mesh region is calculated.
- the fog electron amount distribution F (fog charged particle amount distribution) is calculated by performing convolution integration of and.
- a plurality of distribution functions g 1 to g n according to the energy of fog electrons are used. Therefore, a plurality of fog electron amount distributions F 1 to F n corresponding to the energy of the fog electrons are calculated.
- the distribution functions g 1 to g n for example, a Gaussian distribution can be used. Due to the influence of the electric field generated on the substrate 2, the position where the fog electrons reach the substrate 2 is displaced. Further, the amount of deviation of the arrival position differs depending on the energy of the fog electrons. Therefore, the distribution functions g 1 to g n may have different distribution center positions and different influence radii of the fogging effect.
- the j-th distribution function g j (x, y) and the j-th fog electron distribution F j (x, y) can be defined by the following equations, respectively.
- g j (x, y) (1 / ⁇ j 2) ⁇ exp [- ⁇ (x- ⁇ x j) 2 + (y- ⁇ y j) 2 ⁇ / ⁇ j 2]
- F j (x, y) ⁇ g j (x ⁇ x ′, y ⁇ y ′) E (x ′, y ′) dx′dy ′
- ⁇ x j and ⁇ y j are distribution center positions of the j-th fog electron distribution
- ⁇ j is a constant representing the influence radius of the j-th fog electron.
- the charge amount distribution calculation unit 35 uses the irradiation amount distribution E, the fog electron amount distributions F 1 to F n, and the charge attenuation amount with the passage of time to perform charging.
- the quantity distribution C (x, y) is calculated.
- the drawing elapsed time calculation unit 36 calculates the elapsed time T1 (x, y) from the drawing start time (the start of the layout or the time of starting the drawing of the top frame) to the actual drawing time for each position on the substrate 2. .. For example, when the corresponding frame area (stripe area) is the i-th i-th frame area, the i-1th frame area (stripe area) immediately before the drawing start time at which drawing at the drawing start position is started. The estimated time until each position (x, y) is drawn is calculated as the elapsed time T1 (x, y).
- the cumulative time calculation unit 37 calculates the cumulative time T2, which is the cumulative drawing time required for drawing the drawing unit area (eg, frame area, stripe area) for which drawing has already been completed. For example, when the corresponding frame area is currently the i-th i-th frame area, the time T2 (1) for drawing the first frame area and the time T2 (2 for drawing the second frame area are ), ... Addition value is calculated by cumulatively adding up to time T2 (i) for drawing the i-th frame area. As a result, the cumulative time T2 up to the corresponding frame area can be obtained.
- the cumulative time T2 is the cumulative drawing time required for drawing the drawing the drawing unit area (eg, frame area, stripe area) for which drawing has already been completed.
- the function for obtaining the charge amount distribution C (x, y) includes a direct charge term contributed by irradiation electrons and a fog charge term contributed by fog electrons.
- a plurality of fog charging terms are included depending on the energy of fog electrons.
- the direct charging term and the plurality of fog charging terms each include an attenuation term that contributes elapsed time and a static term that does not contribute elapsed time.
- a charge attenuation amount which is the charge amount immediately after drawing with reference to the charge amount after a sufficient time has elapsed after drawing, and a charge attenuation time constant are used.
- C ET (t) decay terms
- C FT1 (t) C FTn (t) that contribute to the elapsed time
- the function C (E, F 1 , F 2 , ..., F n , t) is defined by the following equation (4).
- C ES (E), C ET (t), C FSj (F j ) and C FTj (t) are defined by the following equations (5), (6), (7) and (8).
- C ES (E) d 0 + d 1 ⁇ ⁇ + d 2 ⁇ D + d 3 ⁇ E (6)
- C ET (t) ⁇ E ( ⁇ ) ⁇ exp ⁇ t / ⁇ E ( ⁇ ) ⁇ (7)
- C FSj (F j ) f 1, j ⁇ F j + f 2, j ⁇ F j 2 + f 3, j ⁇ F j 3
- C FTj (t) ⁇ Fj ( ⁇ ) ⁇ exp ⁇ t / ⁇ Fj ( ⁇ ) ⁇
- d 0 , d 1 , d 2 and d 3 are constants.
- f 1,1 , f 2,1 , f 3,1 , ..., F 1, n , f 2, n , f 3, n are constants whose values can be different from each other, and f 1 of fogging electron intensity F j It expresses that the contribution to charging depends on the energy of the fog electrons.
- the charge attenuation amounts ⁇ E ( ⁇ ) and ⁇ Fj ( ⁇ ) depending on the pattern area density ⁇ used in the equations (6) and (8) are calculated by the following equations (9) and (10), respectively. Can be approximated.
- the equations (9) and (10) are quadratic functions, but the present invention is not limited to this, and higher-order functions or lower-order functions may be used.
- ⁇ E ( ⁇ ) ⁇ E0 + ⁇ E1 ⁇ + ⁇ E2 ⁇ 2
- ⁇ Fj ( ⁇ ) ⁇ F0, j + ⁇ F1, j ⁇ + ⁇ F2, j ⁇ 2
- ⁇ E0 , ⁇ E1 , and ⁇ E2 are constants.
- ⁇ F0,1 , ⁇ F1,1 , ⁇ F2,1 , ..., ⁇ F0, n , ⁇ F1, n , ⁇ F2, n are constants whose values can differ, and are charged by the energy of fog electrons. It expresses that the amount of attenuation is different.
- the charging decay time constants ⁇ E ( ⁇ ) and ⁇ Fj ( ⁇ ) depending on the pattern area density ⁇ used in the equation (4) can be approximated by the following equations (11) and (12).
- the equations (11) and (12) are quadratic functions, but the present invention is not limited to this, and higher-order functions or lower-order functions may be used.
- (11) ⁇ E ( ⁇ ) ⁇ E 0 + ⁇ E 1 ⁇ + ⁇ E 2 ⁇ 2
- ⁇ Fj ( ⁇ ) ⁇ F0, j + ⁇ F1, j ⁇ + ⁇ F2, j ⁇ 2
- ⁇ E0 , ⁇ E1 , and ⁇ E2 are constants.
- ⁇ F0,1 , ⁇ F1,1 , ⁇ F2,1 , ..., ⁇ F0, n , ⁇ F1, n , ⁇ F2, n are constants whose values can be different, and are charged by the energy of fog electrons. It expresses that the decay time constants are different. That is, the charge amount distribution C (x, y) can be defined by an equation as shown in FIG.
- each fog electrification term may be further divided into an irradiation section and a non-irradiation section, as in the above-mentioned Patent Documents 1, 2, and 3.
- the charge amount distribution can be defined by an equation as shown in FIG.
- the high-energy fog-electron charging charges only the non-irradiated part
- the low-energy fog-electron charged charges the irradiated and non-irradiated parts.
- the positional deviation amount distribution calculation unit 38 calculates the positional deviation amount based on the charge amount distribution. Specifically, the misregistration amount distribution calculation unit 38 performs convolution integration of the response function r (x, y) on the charge amount distribution calculated in step S108 to obtain each position of the charge amount distribution C (x, y). A positional deviation amount P of the drawing position (x, y) due to the charge amount of (x, y) is calculated.
- a response function r (x, y) that converts this charge amount distribution C (x, y) into a positional deviation amount distribution P (x, y).
- the charging position indicated by each position of the charge amount distribution C (x, y) is represented by (x ′, y ′), and the corresponding frame region (for example, the i-th frame region) currently undergoing data processing is represented.
- the beam irradiation position of () is represented by (x, y).
- the response function is r (xx ′, y). -Y ').
- the response function r (xx ′, yy ′) is obtained by conducting an experiment in advance and obtaining it so as to match the experimental result, or by performing a numerical calculation in the same manner as in Patent Documents 1 and 2 described above. You can leave it.
- (x, y) indicates the beam irradiation position of the corresponding frame area where data processing is currently being performed.
- the positional deviation amount distribution calculation unit 38 calculates the positional deviation amount distribution Pi (x, y) (or the positional deviation amount map from the positional deviation amount P at each position (x, y) to be drawn in the corresponding frame area). Pi (x, y)) is created.
- the calculated positional deviation amount map Pi (x, y) is stored in the storage device 21 and is output to the control computer 120.
- the shot data generation unit 41 reads the drawing data from the storage device 140, performs the data conversion processing of multiple stages, and generates the shot data in the format unique to the drawing device 100.
- the size of the graphic pattern defined by the drawing data is usually larger than the shot size that the drawing apparatus 100 can form in one shot. Therefore, in the drawing apparatus 100, each figure pattern is divided into a plurality of shot figures so that the drawing apparatus 100 has a size that can be formed by one shot (shot division). Then, for each shot figure, data such as a figure code indicating a figure type, coordinates, and size is defined as shot data.
- step S112 position shift correction process
- the position shift correction unit 42 corrects the irradiation position using the position shift amount calculated in step S110.
- the shot data at each position is corrected.
- a correction value for correcting the positional deviation amount indicated by the positional deviation amount map Pi (x, y) is added to each position (x, y) of the shot data.
- the correction value for example, it is preferable to use a value obtained by reversing the positive and negative signs of the positional deviation amount indicated by the positional deviation amount map Pi (x, y).
- the shot data is defined in the data file so as to be arranged in the order of shots.
- the shaping deflector control unit 43 variably shapes the electron beam 6 for each shot figure from the figure type and size defined in the shot data for each shot figure.
- the deflection amount of the shaping deflector 10 is calculated.
- the objective deflector control unit 44 calculates the deflection amount of the objective deflector 13 for deflecting the shot figure to the position on the substrate 2 to be irradiated. In other words, the objective deflector control unit 44 (deflection amount calculation unit) calculates the deflection amount for deflecting the electron beam to the corrected irradiation position.
- the objective deflector 13 arranged in the electron lens barrel 1 deflects the electron beam in accordance with the calculated deflection amount, and irradiates the corrected irradiation position with the electron beam.
- the drawing unit 150 draws a pattern at the position on the substrate 2 where the charge is corrected.
- FIG. 9 is a diagram showing an example of a drawing result of the beam irradiation unit and its periphery in the present embodiment.
- FIG. 9A after a pattern having a pattern density of 25% is drawn on the irradiation area IR as shown in FIG. 9B, 41 pieces in the x direction (column direction) and a y direction (row) at a constant pitch over the irradiation area / non-irradiation area.
- the amount of positional deviation (positional error map) from the design position on each grid of the cross pattern CP for position measurement drawn on 23 grids arranged in (direction) is shown.
- FIG. 9 a the outline of the region including the beam irradiation region and its peripheral region is seen as a rectangular shape.
- FIG. 10A is an example of a position error map when the irradiation position is corrected based on the charge amount distribution including only one fog charging term without considering the difference in fog electron energy as in the conventional charge correction method.
- FIG. 10a it can be seen that there is a region where the correction residual is large in the region A at the left end and the region B at the right end of the irradiation region. It is considered that this is because the misregistration calculation based on the charge amount distribution including only one fog charging term cannot reproduce the misregistration due to the charging R3 due to the low energy fog electrons in FIG. 5a.
- FIG. 10b shows an example of the position error map when drawing is performed using the drawing method according to the present embodiment. It can be seen that the correction residual is improved compared to FIG. 10a.
- 11a and 11b are graphs showing the position error in the broken line area in FIGS. 10a and 10b.
- the position error was calculated by averaging the row data of row numbers 4 to 21 for each column number. It was confirmed that the correction residual, which was approximately ⁇ 2 nm in the regions A and B when the difference in the energy of the fog electrons was not taken into consideration, can be reduced to approximately ⁇ 1 nm by the method according to the present embodiment.
- the charge amount distribution due to the high-energy fog electrons and the charge amount distribution due to the low-energy fog electrons are separately calculated, and the positional deviation amount distribution is obtained.
- the misaligned position can be corrected with high accuracy.
- the present invention is also applied to the case where there are a plurality of fog electron distributions due to the structure of the optical system or the structure of the device. Applicable. For example, in addition to the above-described high-energy fog electrons, a part of the electron beam 6 in the electron lens barrel 1 is diffusely reflected in the aperture or the lens barrel and then falls into the drawing chamber 14 in a different trajectory from the electron beam 6.
- the present invention can also be applied to the case where there is an image, or when there is an asymmetric structure near the top of the drawing chamber 14 and a portion of the high-energy fog electrons are asymmetrically scattered and there are fog electrons falling on the substrate. ..
- the distribution function corresponding to these fog electrons is used to calculate the fog electron amount distribution.
- the distribution center position and the influence radius of the fog effect may be newly calculated based on the charge amount distribution, for example, in frame region units.
- the low-energy fog electrons receive the leakage magnetic field of the objective lens 12 and perform cyclotron motion.
- This cyclotron motion drifts in the direction based on the leakage magnetic field and the electric field created by the charging of the written area (so-called E cross B drift). Therefore, for the distribution function corresponding to the low-energy fog electrons, it is preferable to determine the distribution center position and the influence radius based on the charge amount distribution (the magnitude and direction of the electric field calculated by the writing history). Since the high-energy fog electrons have a high velocity, they do not perform cyclotron motion, and the amount of deflection due to the electric field created by the charging of the drawn area is sufficiently small. It is set to the center (beam irradiation position), and the distribution center position and the influence radius are constant.
- FIG. 12 is a flowchart illustrating a method of drawing while updating the distribution function corresponding to low energy fog electrons.
- the drawing data of the i-th frame area is read, the pattern area density for each mesh area is calculated, and the pattern density distribution ⁇ i (x, y) is created (steps S201 and S202).
- the dose distribution D i (x, y) for each mesh region is calculated using the pattern density distribution ⁇ i (x, y) (step S203).
- Each mesh value of the pattern density distribution ⁇ i (x, y) is multiplied by the corresponding mesh value of the dose distribution D i (x, y), and the multiplication result is the irradiation amount of the (i ⁇ 1) th frame region.
- the distribution E i-1 (x, y) is added to calculate the dose distribution E i (x, y) in the i-th frame region (step S204).
- the high-energy fog electron distribution function g 1 and ⁇ i D i are convolutively integrated, and the high-energy fog electron amount distribution F 1 i-1 (x, y) in the (i-1) th frame region is added to the calculation result. Then, the high-energy fog electron amount distribution F 1 i (x, y) in the i-th frame region is calculated (step S205).
- the distribution center and the influence radius are constant during the calculation process shown in the flowchart.
- Step S206 Based on the already calculated charge amount distribution C i-1 (x, y) of the (i ⁇ 1) th frame region, the center shift amount and the influence radius of the distribution function g 2 of low energy fog electrons are updated ( Step S206).
- the updated low energy fog electron distribution function g 2 and ⁇ i D i are convolved and integrated, and the calculation result is the low energy fog electron amount distribution F 2 i-1 (x, y) in the (i-1) th frame region.
- the distribution function g 2 of the low-energy fog electrons is updated during the calculation process shown in the flowchart.
- step S209 From the charge amount distribution C i (x, y), the position shift amount distribution of the i-th frame area is calculated (step S209).
- the beam deflection position is corrected using the calculated positional deviation amount, and the i-th frame area is drawn (steps S210 and S211).
- the above-described processing is sequentially performed on all frame areas (steps S201 to S213).
- the distribution corresponding to the low-energy fog electrons is used by using the charge amount distribution in the state where drawing is completed up to the (i-1) th frame area.
- the distribution center position of the function and the influence radius are determined (updated). Then, the low energy fog electron amount distribution in the processing of the i-th frame region is calculated using the updated distribution function.
- the distribution center position and the influence radius of the distribution function are, for example, the intensity of the electrostatic force in the xy plane direction at the i-th frame position using the charge amount distribution in the state where drawing is completed up to the (i-1) th frame area. And the direction calculation result.
- the relationship between the distribution center position and the influence radius with respect to the electrostatic force is calculated using, for example, the axial z-direction electric field distribution in the design of the electrostatic lens, the axial z-direction magnetic field distribution in the design of the objective lens, and the charging distribution. It is determined by orbital simulation of low-energy secondary electrons generated on the axis under electrostatic force.
- the distribution position center and the influence radius corresponding to the electrostatic force in the xy plane direction at the drawing position may be obtained in advance by simulating the trajectory of energy secondary electrons.
- FIGS. 13 to 15 The positional shift correction effect by updating the distribution center position and the influence radius of the distribution function corresponding to the low-energy fog electron will be described with reference to FIGS. 13 to 15.
- a cross-shaped reference pattern P1 is drawn on each grid except the central portion of the evaluation substrate.
- a test pattern TP having an area density of about 25% is drawn on the central portion of the evaluation substrate.
- an L-shaped evaluation pattern P2 is drawn in the vicinity of the reference pattern P1 on each grid.
- FIG. 14A shows a case where the irradiation position of the evaluation pattern P2 is corrected based on the charge amount distribution including only one fog charging term without considering the difference in energy of fog electrons, as in the conventional charge correction method.
- the positional deviation amount is shown in a vector diagram.
- FIG. 14b shows a position error map when the irradiation position of the evaluation pattern P2 is corrected with the distribution center position and the influence radius of the distribution function corresponding to the high energy fog electrons and the distribution function corresponding to the low energy fog electrons being constant. .. FIG.
- 14c shows a position error map in the case where the irradiation position of the evaluation pattern P2 is corrected while updating the distribution center position and the influence radius of the distribution function corresponding to the low-energy fog electron, according to the charge amount distribution.
- the scale of the length of the vector representing the absolute value of the positional deviation amount is common.
- 15a to 15c show the low-energy fog electron charge distribution calculated during the correction of FIGS. 14a to 14c.
- the area surrounded by the broken line in the figure represents the area of the test pattern TP in FIG. 12b.
- the low-energy fog electron distribution is set to zero without taking into consideration the difference in fog electron energy, as in the conventional charging correction method.
- FIG. 15b since the distribution center position and the influence radius of the distribution function corresponding to the low-energy fog electrons are constant and the charge distribution is calculated, a constant low-energy fog electron charge is calculated at a position deviated from the area of the test pattern TP. ing.
- FIG. 15a constant low-energy fog electron charge is calculated at a position deviated from the area of the test pattern TP.
- the charge distribution was calculated while updating the distribution center position and the influence radius of the distribution function corresponding to the low-energy fog electron, by updating the charge amount distribution.
- the drawing is performed from the ⁇ Y direction to the + Y direction, for example, the low-energy secondary electrons generated in the i-th frame region are the drawn (i ⁇ 1) -th side of the ⁇ Y side.
- Electrostatic force in the + Y direction is received from the electrostatic charge distribution in the region up to the frame and deflected in that direction, and after the E cross B drift also occurs in the ⁇ X direction due to the action of the leakage magnetic field of the objective lens, it reaches the substrate. And become low energy fog electrons.
- the low-energy fog electron charge distribution is shifted from the area of the test pattern TP as shown in FIG. 15b, and unlike FIG. 15b, the negative charge in the X direction and the more positive charge in the Y direction. It is calculated as a biased distribution with a large quantity.
- the gray scale indicating the charge amount is displayed on an arbitrary scale.
- the correction residual is improved by separately calculating the charge amount distribution due to the high-energy fog electrons and the charge amount distribution due to the low-energy fog electrons. I understand that it will be done. Further, as shown in FIG. 15c, it can be seen that the correction residual is further improved by updating the distribution center position and the influence radius of the distribution function corresponding to the low-energy fog electron by the charge amount distribution.
- the deviation of the irradiation position due to the charging phenomenon is not limited to the electron beam drawing device.
- INDUSTRIAL APPLICABILITY The present invention can be applied to a charged particle beam apparatus that uses a result obtained by irradiating a target position with a charged particle beam, such as an inspection apparatus that inspects a pattern with a charged particle beam such as an electron beam.
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Abstract
Description
式(1)において、D0は基準ドーズ量であり、ηは後方散乱率である。
(2)gj(x,y)
=(1/πσj 2)×exp[-{(x-Δxj)2+(y-Δyj)2}/σj 2]
(3)Fj(x、y)
=∫∫gj(x-x’,y-y’)E(x’,y’)dx’dy’
式(2)において、Δxj、Δyjはj番目のかぶり電子分布の分布中心位置、σjはj番目のかぶり電子の影響半径を表す定数である。
(4) C(x,y)=C(E,F1,F2,・・・,Fn,t)
=CE(E,t)+ΣjCFj(Fj,t)
=CES(E)+CET(t)+ΣjCFSj(Fj)+ΣjCFTj(t)
(5) CES(E)=d0+d1×ρ+d2×D+d3×E
(6) CET(t)=κE(ρ)・exp{-t/λE(ρ)}
(7) CFSj(Fj)=f1,j×Fj+f2,j×Fj 2+f3,j×Fj 3
(8) CFTj(t)=κFj(ρ)・exp{-t/λFj(ρ)}
ここで、d0、d1、d2、d3は定数である。またf1,1、f2,1、f3,1、・・・、f1,n、f2,n、f3,nはそれぞれ値の異なりうる定数であり、かぶり電子強度Fjの帯電への寄与がかぶり電子のエネルギーによって異なることを表現している。
(9) κE(ρ)=κE0+κE1ρ+κE2ρ2
(10)κFj(ρ)=κF0,j+κF1,jρ+κF2,jρ2
ここで、κE0、κE1、κE2は定数である。またκF0,1、κF1,1、κF2,1、・・・、κF0,n、κF1,n、κF2,nはそれぞれ値の異なりうる定数であり、かぶり電子のエネルギーによって帯電減衰量が異なることを表現している。
(11) λE(ρ)=λE0+λE1ρ+λE2ρ2
(12) λFj(ρ)=λF0,j+λF1,jρ+λF2,jρ2
ここで、λE0、λE1、λE2は定数である。またλF0,1、λF1,1、λF2,1、・・・、λF0,n、λF1,n、λF2,nはそれぞれ値の異なりうる定数であり、かぶり電子のエネルギーによって帯電減衰時定数が異なることを表現している。すなわち、帯電量分布C(x,y)は図7に示すような式で定義できる。
本出願は、2018年11月9日付で出願された日本特許出願2018-211526に基づいており、その全体が引用により援用される。
2 基板
3 XYステージ
4 ミラー
5 電子銃
6 電子ビーム
7 照明レンズ
8 第1アパーチャ
9 投影レンズ
10 偏向器
11 第2アパーチャ
12 対物レンズ
13 偏向器
14 描画室
15 静電レンズ
21,140 記憶装置
30 描画制御部
31 パターン密度分布算出部
32 ドーズ量分布算出部
33 照射量分布算出部
34 かぶり電子量分布算出部
35 帯電量分布算出部
36 描画経過時間演算部
37 累積時間演算部
38 位置ずれ量分布算出部
41 ショットデータ生成部
42 位置ずれ補正部
43 成形偏向器制御部
44 対物偏向器制御部
45 ステージ位置検出部
46 ステージ制御部
100 描画装置
150 描画部
160 制御部
Claims (14)
- 荷電粒子ビームを偏向器により偏向させてステージ上の基板にパターンを描画する荷電粒子ビーム描画装置であって、
前記基板の描画領域をメッシュ状に仮想分割し、メッシュ領域毎の前記パターンの配置割合を示すパターン密度分布を算出するパターン密度分布算出部と、
前記パターン密度分布を用いてメッシュ領域毎のドーズ量を示すドーズ量分布を算出するドーズ量分布算出部と、
前記パターン密度分布及び前記ドーズ量分布を用いて、前記放出部から放出され、前記基板に照射される前記荷電粒子ビームの照射量分布を算出する照射量分布算出部と、
分布中心及びかぶり効果の影響半径の異なる複数のかぶり荷電粒子の分布関数の各々と、前記照射量分布とをそれぞれ畳み込み積分することで、複数のかぶり荷電粒子量分布を算出するかぶり荷電粒子量分布算出部と、
前記パターン密度分布、前記ドーズ量分布及び前記照射量分布を用いて、直接帯電による帯電量分布を算出し、前記複数のかぶり荷電粒子量分布を用いて、複数のかぶり帯電による帯電量分布を算出する帯電量分布算出部と、
前記直接帯電による帯電量分布及び前記複数のかぶり帯電による帯電量分布に基づく描画位置の位置ずれ量を算出する位置ずれ量算出部と、
前記位置ずれ量を用いて、照射位置を補正する補正部と、
補正された照射位置に荷電粒子ビームを照射する描画部と、
を備える荷電粒子ビーム描画装置。 - 前記帯電量分布算出部は、描画後十分に時間が経過した後の帯電量を基準とする描画直後の帯電量である帯電減衰量と、帯電減衰時定数と、を用いて、前記直接帯電による帯電量分布及び前記複数のかぶり帯電による帯電量分布を算出することを含むことを特徴とする請求項1に記載の荷電粒子ビーム描画装置。
- 前記複数のかぶり荷電粒子の分布関数は、第1の分布関数と第2の分布関数を含み、前記第1の分布関数の分布中心位置は、かぶり荷電粒子の設計上の分布中心であり、前記第2の分布関数の分布中心位置は、かぶり荷電粒子の設計上の分布中心からずれていることを特徴とする請求項1または請求項2に記載の荷電粒子ビーム描画装置。
- 前記第2の分布関数は、前記帯電量分布に基づいて前記分布中心位置及び前記かぶり効果の影響半径が更新されることを特徴とする請求項3に記載の荷電粒子ビーム描画装置。
- 前記基板の上方に負の電位が印加された静電レンズが配置されることを特徴とする請求項1から請求項4のいずれか1項に記載の荷電粒子ビーム描画装置。
- 荷電粒子ビームを偏向器により偏向させてステージ上の基板にパターンを描画する荷電粒子ビーム描画方法であって、
前記基板の描画領域をメッシュ状に仮想分割し、メッシュ領域毎の前記パターンの配置割合を示すパターン密度分布を算出する工程と、
前記パターン密度分布を用いてメッシュ領域毎のドーズ量を示すドーズ量分布を算出する工程と、
前記パターン密度分布及び前記ドーズ量分布を用いて、前記基板に照射される前記荷電粒子ビームの照射量分布を算出する工程と、
分布中心及びかぶり効果の影響半径の異なる複数のかぶり荷電粒子の分布関数の各々と、前記照射量分布とをそれぞれ畳み込み積分することで、複数のかぶり荷電粒子量分布を算出する工程と、
前記パターン密度分布、前記ドーズ量分布及び前記照射量分布を用いて、直接帯電による帯電量分布を算出し、前記複数のかぶり荷電粒子量分布を用いて、複数のかぶり帯電による帯電量分布を算出する工程と、
前記直接帯電による帯電量分布及び前記複数のかぶり帯電による帯電量分布に基づく描画位置の位置ずれ量を算出する工程と、
前記位置ずれ量を用いて、照射位置を補正する工程と、
補正された照射位置に荷電粒子ビームを照射する工程と、
を備える荷電粒子ビーム描画方法。 - 前記帯電量分布の算出には、描画後十分に時間が経過した後の帯電量を基準とする描画直後の帯電量である帯電減衰量と、帯電減衰時定数と、が用いられることを特徴とする請求項6に記載の荷電粒子ビーム描画方法。
- 前記複数のかぶり荷電粒子の分布関数は第1の分布関数と第2の分布関数を含み、前記第1の分布関数の分布中心位置は、かぶり荷電粒子の設計上の分布中心であり、前記第2の分布関数の分布中心位置は、かぶり荷電粒子の設計上の分布中心からずれていることを特徴とする請求項6または請求項7に記載の荷電粒子ビーム描画方法。
- 前記帯電量分布に基づいて、前記第2の分布関数の分布中心位置及びかぶり効果の影響半径を更新することを特徴とする請求項8に記載の荷電粒子ビーム描画方法。
- 前記基板上に配置される静電レンズに負の電位が印加される請求項6から請求項9のいずれか1項に記載の荷電粒子ビーム描画方法。
- 荷電粒子ビームを偏向器により偏向させてパターンが描画される基板の描画領域をメッシュ状に仮想分割し、メッシュ領域毎の前記パターンの配置割合を示すパターン密度分布を算出する処理と、
前記パターン密度分布を用いてメッシュ領域毎のドーズ量を示すドーズ量分布を算出する処理と、
前記パターン密度分布及び前記ドーズ量分布を用いて、前記基板に照射される前記荷電粒子ビームの照射量分布を算出する処理と、
分布中心およびかぶり効果の影響半径の異なる複数のかぶり荷電粒子の分布関数の各々と、前記照射量分布とをそれぞれ畳み込み積分することで、複数のかぶり荷電粒子量分布を算出する処理と、
前記パターン密度分布、前記ドーズ量分布及び前記照射量分布を用いて、直接帯電による帯電量分布を算出し、前記複数のかぶり荷電粒子量分布を用いて、複数のかぶり帯電による帯電量分布を算出する処理と、
前記直接帯電による帯電量分布及び前記複数のかぶり帯電による帯電量分布に基づく描画位置の位置ずれ量を算出する処理と、
前記位置ずれ量を用いて、照射位置を補正する処理と、
補正された照射位置に荷電粒子ビームを照射する処理と、
をコンピュータに実行させるためのプログラム。 - 前記帯電量分布の算出には、描画後十分に時間が経過した後の帯電量を基準とする描画直後の帯電量である帯電減衰量と、帯電減衰時定数と、が用いられることを特徴とする請求項11に記載のプログラム。
- 前記複数のかぶり荷電粒子の分布関数は第1の分布関数と第2の分布関数を含み、前記第1の分布関数の分布中心位置は、かぶり荷電粒子の設計上の分布中心であり、前記第2の分布関数の分布中心位置は、かぶり荷電粒子の設計上の分布中心からずれていることを特徴とする請求項11または請求項12に記載のプログラム。
- 前記帯電量分布に基づいて、前記第2の分布関数の分布中心位置及びかぶり効果の影響半径を更新することを特徴とする請求項13に記載のプログラム。
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