JP2011066415A - 導電表面チャネル伸長部分とゲート制御チャネル側壁を有する薄体mosfet - Google Patents
導電表面チャネル伸長部分とゲート制御チャネル側壁を有する薄体mosfet Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 11
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 9
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 9
- 230000007547 defect Effects 0.000 claims description 8
- 238000002955 isolation Methods 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 1
- 108091006146 Channels Proteins 0.000 description 41
- 230000003071 parasitic effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
【解決手段】 導電表面チャネル伸長部分とゲート制御チャネル側壁を有する薄体MOSFETを提供する。一実施例は、半導体基板と、半導体基板の上面に配置されたチャネル層と、ゲート電極とチャネル層間を介するゲート誘電層と、チャネル層上に配置され、ゲート電極とオーミックコンタクト間を介する誘電伸長層とを備えたMOSFETである。ゲート誘電層は第一材料からなり、第一材料は、チャネル層に対する低欠陥の界面を形成する。一方、誘電伸長部分は、第一材料と異なる第二材料からなり、第二材料は、チャネル層に対する導電表面チャネルを形成する。
【選択図】 図2
Description
101 基板層
102 チャネル層
103 イオン注入伸長部分
104 オーミックコンタクト
106 ゲート酸化層
108 ゲート電極
110 ゲート側壁
112 分離領域
120 MOSFET
122 基板層
124 チャネル層
126 ゲート酸化層
128 ソースとドレインオーミックコンタクト
130 ゲート電極
132 ゲート側壁
133 分離領域
134 導電表面チャネル
136 伸長部分
138 界面
200 MOSFET
202 基板層
204 チャネル層
206 ゲート誘電層
207 伸長誘電体
208 ソースとドレインオーミックコンタクト
210 ゲート電極
212 ゲート側壁
213 分離領域
214 領域
216 導電表面チャネル
300 側壁
Claims (13)
- 半導体基板と、
前記半導体基板の上面に配置されたチャネル層と、
ゲート電極と前記チャネル層間に介在するゲート誘電層と、
前記チャネル層上に配置され、前記ゲート電極とオーミックコンタクト間に介在する誘電伸長層とを備えたMOSFETにおいて、
前記ゲート誘電層は第一材料からなり、前記第一材料は、前記チャネル層の上面に対して低欠陥の界面を形成し、
前記誘電伸長層は、前記第一材料と異なる第二材料からなり、前記第二材料は、前記チャネル層に対する導電表面チャネルを形成することを特徴とするMOSFET。 - 前記チャネル層は、InGaAs、InAs、及びInAsSbのうちの一つからなることを特徴とする請求項1に記載のMOSFET。
- 前記基板は、ワイドバンドギャップ半導体材料からなることを特徴とする請求項1に記載のMOSFET。
- 前記ゲート誘電層は、酸化物からなることを特徴とする請求項1に記載のMOSFET。
- 更に、前記半導体基板の辺縁に沿って、分離領域を備えることを特徴とする請求項1に記載のMOSFET。
- 半導体基板と、
前記半導体基板の上面に配置され、III-V族半導体からなるチャネル層と、
ゲート電極と前記チャネル層間に介在し、前記チャネル層の前後側面に沿って配置されるゲート誘電層と、
前記チャネル層上に配置され、前記ゲート電極と前記オーミックコンタクト間に介在する誘電伸長層とを備えた薄体MOSFETにおいて、
前記ゲート誘電層は第一材料からなり、前記第一材料は、前記チャネルの上面と前後面に沿って、前記チャネル層に対する低欠陥の界面を形成し、
前記誘電伸長部分は、前記第一材料と異なる第二材料からなり、前記第二材料は、前記チャネル層に対する導電表面チャネルを形成することを特徴とする薄体MOSFET。 - 前記チャネル層は、InGaAs、InAs、及び、InAsSbのうちの一つからなることを特徴とする請求項6に記載の薄体MOSFET。
- 前記誘電伸長部分は、前記半導体基板表面を酸化することにより製造されることを特徴とする請求項6に記載の薄体MOSFET。
- 前記ゲート誘電層は、酸化物からなることを特徴とする請求項6に記載の薄体MOSFET。
- 更に、前記半導体基板の辺縁に沿って配置された分離領域を備えることを特徴とする請求項6に記載の薄体MOSFET。
- ソースとドレインオーミックコンタクト間に配置されたゲート電極を備えた薄体MOSFETの製造方法であって、本方法は、
半導体基板の上面に、チャネル層を提供するステップと、
前記ゲート電極と前記チャネル層間に、ゲート誘電層を提供するステップと、
前記チャネル層上に配置され、前記ゲート電極と前記オーミックコンタクト間に介在する誘電伸長層を提供するステップとを備え、
前記ゲート誘電体層は第一材料からなり、前記第一材料は、前記チャネル層に対する低欠陥の界面を形成し、
前記誘電伸長層は、前記第一材料と異なる第二材料からなり、前記第二材料は、前記チャネル層に対する導電表面チャネルを形成することを特徴とする薄体MOSFETの製造方法。 - 前記チャネル層は、InGaAs、InAs、及びInAsSbのうちの一つからなることを特徴とする請求項11に記載の薄体MOSFETの製造方法。
- 前記誘電伸長層は、前記チャネル層の表面を酸化することにより製造されることを特徴とする請求項11に記載の薄体MOSFETの製造方法。
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US12/562,790 | 2009-09-18 | ||
US12/562,790 US20110068348A1 (en) | 2009-09-18 | 2009-09-18 | Thin body mosfet with conducting surface channel extensions and gate-controlled channel sidewalls |
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JP2011066415A true JP2011066415A (ja) | 2011-03-31 |
JP5334934B2 JP5334934B2 (ja) | 2013-11-06 |
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EP (1) | EP2299480A3 (ja) |
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KR (1) | KR101145991B1 (ja) |
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US7435636B1 (en) * | 2007-03-29 | 2008-10-14 | Micron Technology, Inc. | Fabrication of self-aligned gallium arsenide MOSFETs using damascene gate methods |
US7812370B2 (en) | 2007-07-25 | 2010-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tunnel field-effect transistor with narrow band-gap channel and strong gate coupling |
-
2009
- 2009-09-18 US US12/562,790 patent/US20110068348A1/en not_active Abandoned
- 2009-12-22 TW TW098144138A patent/TWI419331B/zh active
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2010
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JP2006513572A (ja) * | 2003-01-09 | 2006-04-20 | フリースケール セミコンダクター インコーポレイテッド | エンハンスメントモード金属酸化膜半導体電界効果トランジスタ及びその形成方法 |
JP2008277640A (ja) * | 2007-05-02 | 2008-11-13 | Toshiba Corp | 窒化物半導体素子 |
JP2010239063A (ja) * | 2009-03-31 | 2010-10-21 | Furukawa Electric Co Ltd:The | 電界効果トランジスタ |
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EP2299480A2 (en) | 2011-03-23 |
US20110068348A1 (en) | 2011-03-24 |
CN102024850A (zh) | 2011-04-20 |
KR101145991B1 (ko) | 2012-05-15 |
CN102024850B (zh) | 2012-11-14 |
TW201112420A (en) | 2011-04-01 |
TWI419331B (zh) | 2013-12-11 |
KR20110031078A (ko) | 2011-03-24 |
EP2299480A3 (en) | 2013-06-05 |
JP5334934B2 (ja) | 2013-11-06 |
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