JP5325198B2 - 電界効果トランジスタ - Google Patents
電界効果トランジスタ Download PDFInfo
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- 230000005669 field effect Effects 0.000 title claims abstract description 14
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 43
- 230000004888 barrier function Effects 0.000 claims abstract description 29
- 238000000605 extraction Methods 0.000 claims description 23
- 239000002019 doping agent Substances 0.000 claims description 18
- 230000007717 exclusion Effects 0.000 claims description 15
- 239000000969 carrier Substances 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 229960001716 benzalkonium Drugs 0.000 claims 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 claims 1
- 238000005469 granulation Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 description 15
- 239000002800 charge carrier Substances 0.000 description 10
- 239000000370 acceptor Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 229910000673 Indium arsenide Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 238000005275 alloying Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000010407 anodic oxide Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000011982 device technology Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- -1 indium aluminum antimony Chemical compound 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Description
ベース領域は、少なくとも5×1017cm−3のアクセプタを含むp+InSbであってもよく、
障壁領域は、0.05から0.25の範囲のxを有するp +In1−xAlxSbであり、少なくとも5×1017cm−3のアクセプタを有してもよく、
真性領域は、5×1017cm−3より小さなアクセプタ、好ましくは1×1015cm−3から5×1016cm−3の範囲のアクセプタを含むπInSbであり、
ソースおよびドレイン領域は、少なくとも5×1017cm−3のドナーを含むn+InSbである。
第1の(ベース)層102、p+InSb厚さ2μm、Beドーパント濃度3×1018cm−3、
第2の(障壁)層104、p +In0.85Al0.15Sb厚さ20nm、Beドーパント濃度3×1018cm−3、
第3の(真性)層106、πInSb厚さ0.5μm、Beドーパント濃度1×1015cm−3、および
第4の(絶縁)層108、SiO2厚さ70nm、
である。
ベース領域、少なくとも5×1017cm−3のアクセプタ濃度を有するp+InSb、
障壁領域、0.05から0.25の範囲のxを有するp +In1−xAlxSbであり、少なくとも5×1017cm−3のアクセプタ濃度を有する、および
真性領域、5×1017cm−3よりも小さなアクセプタ濃度、好ましくは1×1015cm−3から5×1016cm−3の範囲のアクセプタ濃度をもつπInSbである。
第1の(ベース)層202、p+InSb厚さ2μm、Beドーパント濃度3×1018cm−3、
第2の(障壁)層204、p +In0.85Al0.15Sb厚さ20nm、Beドーパント濃度3×1018cm−3、
第3の(真性)層206、πInSb厚さ0.5μm、Beドーパント濃度1×1015cm−3、および
第4の(チャネル)層208、pInSb厚さ20nm、Siドーパント濃度3×1017cm−3、
第5の(ゲート絶縁)層210:SiO2厚さ70nm
である。
Claims (11)
- 電界効果トランジスタ(FET)の動作温度でバイアスされていない時に真性導電率を有する真正領域(106)と、真性領域(106)から少数キャリアを取り去るための抽出コンタクトおよび真性領域(106)への少数キャリアの再導入を阻止するための排除コンタクトとを含む種類の電界効果トランジスタ(FET)であって、
FETが、エンハンスメントモードMISFET(100)であり、
FET(100)が、ソース領域(110)とドレイン領域(112)の間に延びるチャネルを画定するための手段を含み、
前記真性領域(106)が、それ自体がベース領域(102)との界面を有する障壁領域(104)との界面を有し、真性、障壁およびベースの領域(106、104、102)が同じ導電型であり、障壁領域(104)が真性およびベースの領域(106、102)よりも広いバンドギャップをもち、かつ真性領域(106)に対する排除コンタクトを提供し、
ベース、障壁および真性領域(102、104、106)が、層構造に連続して配置され、真性領域(106)が、ゲート絶縁層(108)およびゲートコンタクト(116)を支持する実質的に平坦な表面部分を有し、ゲート絶縁層(108)およびゲートコンタクト(116)を支持する該実質的に平坦な表面部分の凹または凸が限度において50nm以下であり、
真性領域(106)がp型であり、ソースおよびドレイン領域(110、112)との組合せで抽出コンタクト手段を形成し、
a)ベース領域(102)が、p + InSbであり、かつ少なくとも5×10 17 cm −3 のアクセプタ濃度を有し、
b)障壁領域(104)が、0.05から0.25の範囲のxをもつp + In 1−x Al x Sbであり、かつ少なくとも5×10 17 cm −3 のアクセプタ濃度を有し、
c)真性領域(106)が、5×10 17 cm −3 より少ないアクセプタ濃度をもつπInSbであり、
d)ソースおよびドレイン領域(110、112)が、少なくとも5×10 17 cm −3 のドーパント濃度をもつn + InSbであることを特徴とする電界効果トランジスタ。 - ゲート絶縁層(108)およびゲートコンタクト(116)を支持する実質的に平坦な表面部分の凹または凸が、限度において5nmより大きくないことを特徴とする請求項1に記載のFET。
- 高濃度n型である前記ソースおよびドレイン領域(110、112)を組み込んでいることを特徴とする請求項1または2に記載のFET。
- 前記ゲートコンタクト(116)が、動作時にエンハンスメントチャネルを前記ソースとドレイン領域(110、112)の間に画定するように、前記ソースとドレイン領域(110、112)の間の前記真性領域(106)の部分から絶縁され、かつ少なくともその部分にわたって延びることを特徴とする請求項1から3のいずれか一項に記載のFET。
- 電界効果トランジスタ(FET)の動作温度でバイアスされていない時に真性導電率を有する真性領域(206)と、真性領域(206)から少数キャリアを取り去るための抽出コンタクトおよび真性領域(206)への少数キャリアの再導入を阻止するための排除コンタクトとを含む種類の電界効果トランジスタ(FET)であって、
FETが、結合されたチャネル領域(208)を有するデプレッションモードMISFET(200)であり、
FET(200)が、ソース領域(212)とドレイン領域(214)の間に延びるチャネルを画定するための手段を含み、
真性領域(206)が、それ自体がベース領域(102)との界面を有する障壁領域(204)との界面を有し、真性、障壁およびベース領域(206、204、202)が同じ導電型であり、障壁領域(204)が真性およびベース領域(206、202)よりも比較的広いバンドギャップをもち、かつ真性領域(206)に対する排除コンタクトを提供し、
真性領域(206)が、チャネル領域(208)を支持し、ベース、障壁、真性およびチャネル領域(202、204、206、208)が層構造に連続して配置され、ソースおよびドレイン領域(212、214)がチャネル領域(208)上で成長され、チャネル領域(208)が、ゲート絶縁層(210)およびゲートコンタクト(218)を支持する実質的に平坦な表面部分を有し、ゲート絶縁層(210)およびゲートコンタクト(218)を支持する該実質的に平坦な表面部分の凹または凸が限度において50nm以下であり、
真性領域(206)がp型であり、それ自体かチャネル領域(208)のいずれかが、ソースおよびドレイン領域(212、214)と抽出コンタクト手段を形成し、
a)ベース領域(102)が、p + InSbであり、かつ少なくとも5×10 17 cm −3 のアクセプタ濃度を有し、
b)障壁領域(104)が、0.05から0.25の範囲のxをもつp + In 1−x Al x Sbであり、かつ少なくとも5×10 17 cm −3 のアクセプタ濃度を有し、
c)真性領域(106)が、5×10 17 cm −3 より小さなアクセプタ濃度を含むπInSbであり、
d)ソースおよびドレイン領域(110、112)が、少なくとも5×10 17 cm −3 のドナー濃度をもつn + InSbであることを特徴とする電界効果トランジスタ。 - ゲート絶縁層(210)およびゲートコンタクト(218)を支持する実質的に平坦な表面部分の凹または凸が、限度において5nmより大きくないことを特徴とする請求項5に記載のFET。
- 前記チャネル領域(208)の上に成長により形成された高濃度にドープされた前記ソースおよびドレイン領域(212、214)を組み込み、前記ソースおよびドレイン領域(212、214)がゲートコンタクト(218)を収容するゲート凹部(222)をその間に画定することを特徴とする請求項5または6に記載のFET。
- 前記ソースおよびドレイン領域(212、214)が、その間にゲート凹部(222)を画定し、前記チャネル領域(208)が、前記ゲート絶縁層(208)および前記ゲートコンタクト(210)を支持する前記ゲート凹部(222)の端部に表面部分を有することを特徴とする請求項5から7のいずれか一項に記載のFET。
- チャネル領域が、真性領域の部分の間にあり、真性領域が、ソースおよびドレイン領域(212、214)との組合せで抽出コンタクト手段を形成することを特徴とする請求項5から8のいずれか一項に記載のFET。
- 前記ベース、障壁および真性領域(202、204、206)が層構造に連続して配置され、前記真性領域(206)が前記チャネル領域(208)を含み、前記ソースおよびドレイン領域(212、214)が前記真性領域(206)で支持され、その間にゲート凹部(222)を画定し、前記真性領域(206)が、前記ゲート絶縁層(208)およびゲートコンタクト(210)を支持するゲート凹部(222)の端部に表面部分を有することを特徴とする請求項9に記載のFET。
- 前記抽出コンタクト及び前記排除コンタクトが、基板バイアス電圧変化によるゲート閾値電圧の変化が最小となる無限大の差動インピーダンスの点で、FET(100、200)をバイアスするように構成されることを特徴とする請求項1から10のいずれか一項に記載のFET。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9725189A GB2331841A (en) | 1997-11-28 | 1997-11-28 | Field effect transistor |
GB9725189.6 | 1997-11-28 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009097671A Division JP2009194392A (ja) | 1997-11-28 | 2009-04-14 | 電界効果トランジスタ |
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JP2011049599A JP2011049599A (ja) | 2011-03-10 |
JP5325198B2 true JP5325198B2 (ja) | 2013-10-23 |
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Family Applications (3)
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JP2000523711A Pending JP2001525615A (ja) | 1997-11-28 | 1998-06-10 | 電界効果トランジスタ |
JP2009097671A Pending JP2009194392A (ja) | 1997-11-28 | 2009-04-14 | 電界効果トランジスタ |
JP2010269978A Expired - Lifetime JP5325198B2 (ja) | 1997-11-28 | 2010-12-03 | 電界効果トランジスタ |
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Application Number | Title | Priority Date | Filing Date |
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JP2000523711A Pending JP2001525615A (ja) | 1997-11-28 | 1998-06-10 | 電界効果トランジスタ |
JP2009097671A Pending JP2009194392A (ja) | 1997-11-28 | 2009-04-14 | 電界効果トランジスタ |
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US (1) | US6624451B2 (ja) |
EP (1) | EP1034568B1 (ja) |
JP (3) | JP2001525615A (ja) |
KR (1) | KR100542963B1 (ja) |
CN (1) | CN1284204A (ja) |
CA (1) | CA2311778C (ja) |
GB (2) | GB2331841A (ja) |
WO (1) | WO1999028975A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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GB2362506A (en) * | 2000-05-19 | 2001-11-21 | Secr Defence | Field effect transistor with an InSb quantum well and minority carrier extraction |
US7226843B2 (en) * | 2002-09-30 | 2007-06-05 | Intel Corporation | Indium-boron dual halo MOSFET |
CN100403549C (zh) * | 2002-12-19 | 2008-07-16 | 松下电器产业株式会社 | 半导体器件及保持电路 |
US7288821B2 (en) * | 2005-04-08 | 2007-10-30 | International Business Machines Corporation | Structure and method of three dimensional hybrid orientation technology |
JP2007115971A (ja) * | 2005-10-21 | 2007-05-10 | Fujitsu Ltd | 半導体装置とその製造方法 |
DE102006030631B4 (de) | 2006-07-03 | 2011-01-05 | Infineon Technologies Austria Ag | Halbleiterbauelementanordnung mit einem Leistungsbauelement und einem Logikbauelement |
KR100847827B1 (ko) * | 2006-12-29 | 2008-07-23 | 동부일렉트로닉스 주식회사 | 고전압 트랜지스터의 제조 방법 |
US8017915B2 (en) | 2008-03-14 | 2011-09-13 | Reflexion Medical, Inc. | Method and apparatus for emission guided radiation therapy |
US8735903B2 (en) | 2010-02-10 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Density of states engineered field effect transistor |
US20140217470A1 (en) * | 2011-09-08 | 2014-08-07 | Tamura Corporation | Ga2O3 SEMICONDUCTOR ELEMENT |
US8803242B2 (en) * | 2011-09-19 | 2014-08-12 | Eta Semiconductor Inc. | High mobility enhancement mode FET |
US8891573B2 (en) | 2012-05-14 | 2014-11-18 | Arizona Board Of Regents | 6.1 angstrom III-V and II-VI semiconductor platform |
WO2016081595A1 (en) * | 2014-11-18 | 2016-05-26 | Avidien Technologies | Multichannel air displacement pipettor |
WO2018093933A1 (en) | 2016-11-15 | 2018-05-24 | Reflexion Medical, Inc. | System for emission-guided high-energy photon delivery |
WO2018183748A1 (en) | 2017-03-30 | 2018-10-04 | Reflexion Medical, Inc. | Radiation therapy systems and methods with tumor tracking |
WO2019014387A1 (en) | 2017-07-11 | 2019-01-17 | Reflexion Medical, Inc. | METHODS FOR MANAGING RETENTION FOR PET SENSOR |
JP7315961B2 (ja) | 2017-08-09 | 2023-07-27 | リフレクション メディカル, インコーポレイテッド | 放出誘導放射線療法における異常検出のためのシステムおよび方法 |
US11369806B2 (en) | 2017-11-14 | 2022-06-28 | Reflexion Medical, Inc. | Systems and methods for patient monitoring for radiotherapy |
US11239802B2 (en) * | 2019-10-02 | 2022-02-01 | Wolfspeed, Inc. | Radio frequency transistor amplifiers having engineered instrinsic capacitances for improved performance |
US11798983B2 (en) | 2021-07-19 | 2023-10-24 | United Semiconductor Japan Co., Ltd. | Semiconductor device with deeply depleted channel and manufacturing method thereof |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4080721A (en) * | 1975-06-30 | 1978-03-28 | International Business Machines Corporation | Fabrication of semiconductor device |
DE3018988A1 (de) * | 1980-05-17 | 1981-11-26 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Isolierschicht-feldeffekttransistor |
JPS5710269A (en) * | 1980-12-22 | 1982-01-19 | Itt | Insulated gate type field effect transistor |
US4452646A (en) * | 1981-09-28 | 1984-06-05 | Mcdonnell Douglas Corporation | Method of making planar III-V compound device by ion implantation |
JP2515751B2 (ja) * | 1986-08-13 | 1996-07-10 | 株式会社日立製作所 | 超伝導トランジスタ |
EP0401356A1 (en) * | 1988-12-09 | 1990-12-12 | Hughes Aircraft Company | Ultrathin submicron mosfet with intrinsic channel |
US4927782A (en) * | 1989-06-27 | 1990-05-22 | The United States Of America As Represented By The Secretary Of The Navy | Method of making self-aligned GaAs/AlGaAs FET's |
GB9100351D0 (en) * | 1991-01-08 | 1991-02-20 | Secr Defence | Semiconductor heterostructure device |
US5329137A (en) * | 1991-07-17 | 1994-07-12 | The United States Of America As Represented By The Secretary Of The Air Force | Integrated total internal reflection optical switch utilizing charge storage in a quantum well |
TW215967B (en) * | 1992-01-17 | 1993-11-11 | Seiko Electron Co Ltd | MOS Poly-Si thin film transistor with a flattened channel interface and method of producing same |
JPH06267991A (ja) * | 1993-03-12 | 1994-09-22 | Hitachi Ltd | 半導体装置およびその製造方法 |
KR970000538B1 (ko) * | 1993-04-27 | 1997-01-13 | 엘지전자 주식회사 | 게이트 리세스 구조를 갖는 전계효과트랜지스터의 제조방법 |
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1997
- 1997-11-28 GB GB9725189A patent/GB2331841A/en not_active Withdrawn
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1998
- 1998-06-10 CA CA002311778A patent/CA2311778C/en not_active Expired - Fee Related
- 1998-06-10 CN CN98813383A patent/CN1284204A/zh active Pending
- 1998-06-10 KR KR1020007005781A patent/KR100542963B1/ko not_active IP Right Cessation
- 1998-06-10 GB GB0011379A patent/GB2346481B/en not_active Expired - Fee Related
- 1998-06-10 WO PCT/GB1998/001695 patent/WO1999028975A1/en active IP Right Grant
- 1998-06-10 EP EP98928446A patent/EP1034568B1/en not_active Expired - Lifetime
- 1998-06-10 JP JP2000523711A patent/JP2001525615A/ja active Pending
-
2001
- 2001-05-21 US US09/860,770 patent/US6624451B2/en not_active Expired - Lifetime
-
2009
- 2009-04-14 JP JP2009097671A patent/JP2009194392A/ja active Pending
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2010
- 2010-12-03 JP JP2010269978A patent/JP5325198B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CA2311778C (en) | 2006-05-30 |
CA2311778A1 (en) | 1999-06-10 |
GB2346481A (en) | 2000-08-09 |
JP2001525615A (ja) | 2001-12-11 |
KR20010032538A (ko) | 2001-04-25 |
GB9725189D0 (en) | 1998-01-28 |
US20020014633A1 (en) | 2002-02-07 |
WO1999028975A1 (en) | 1999-06-10 |
GB0011379D0 (en) | 2000-06-28 |
US6624451B2 (en) | 2003-09-23 |
EP1034568A1 (en) | 2000-09-13 |
KR100542963B1 (ko) | 2006-01-20 |
JP2011049599A (ja) | 2011-03-10 |
CN1284204A (zh) | 2001-02-14 |
JP2009194392A (ja) | 2009-08-27 |
GB2346481B (en) | 2002-11-20 |
GB2331841A (en) | 1999-06-02 |
EP1034568B1 (en) | 2013-03-13 |
GB2331841A9 (en) |
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