JP2011040882A - 高周波デバイス - Google Patents

高周波デバイス Download PDF

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Publication number
JP2011040882A
JP2011040882A JP2009184674A JP2009184674A JP2011040882A JP 2011040882 A JP2011040882 A JP 2011040882A JP 2009184674 A JP2009184674 A JP 2009184674A JP 2009184674 A JP2009184674 A JP 2009184674A JP 2011040882 A JP2011040882 A JP 2011040882A
Authority
JP
Japan
Prior art keywords
substrate
frequency device
dielectric
opening
inductive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009184674A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011040882A5 (https=
Inventor
Akira Akiba
朗 秋葉
Takashi Mitarai
俊 御手洗
Koichi Ikeda
浩一 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2009184674A priority Critical patent/JP2011040882A/ja
Priority to CN201010241077XA priority patent/CN101996979B/zh
Priority to TW99125503A priority patent/TWI441307B/zh
Priority to US12/847,182 priority patent/US8546911B2/en
Priority to US12/847,240 priority patent/US20110032685A1/en
Priority to CN201010243766.4A priority patent/CN101997506B/zh
Priority to EP20100008048 priority patent/EP2284888A3/en
Publication of JP2011040882A publication Critical patent/JP2011040882A/ja
Publication of JP2011040882A5 publication Critical patent/JP2011040882A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0064—Constructional details comprising semiconductor material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/175—Series LC in series path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775—Parallel LC in shunt or branch path

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Filters And Equalizers (AREA)
JP2009184674A 2009-08-07 2009-08-07 高周波デバイス Pending JP2011040882A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2009184674A JP2011040882A (ja) 2009-08-07 2009-08-07 高周波デバイス
CN201010241077XA CN101996979B (zh) 2009-08-07 2010-07-30 中介层、包括该中介层的模块及电子装置
TW99125503A TWI441307B (zh) 2009-08-07 2010-07-30 內插器、模組及包括該內插器之電子裝置
US12/847,182 US8546911B2 (en) 2009-08-07 2010-07-30 High frequency device
US12/847,240 US20110032685A1 (en) 2009-08-07 2010-07-30 Interposer, module, and electronics device including the same
CN201010243766.4A CN101997506B (zh) 2009-08-07 2010-08-02 高频装置
EP20100008048 EP2284888A3 (en) 2009-08-07 2010-08-02 Interposer, module and electronics device including the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009184674A JP2011040882A (ja) 2009-08-07 2009-08-07 高周波デバイス

Publications (2)

Publication Number Publication Date
JP2011040882A true JP2011040882A (ja) 2011-02-24
JP2011040882A5 JP2011040882A5 (https=) 2012-09-13

Family

ID=43534177

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009184674A Pending JP2011040882A (ja) 2009-08-07 2009-08-07 高周波デバイス

Country Status (3)

Country Link
US (1) US8546911B2 (https=)
JP (1) JP2011040882A (https=)
CN (1) CN101997506B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012029016A (ja) * 2010-07-22 2012-02-09 Tdk Corp バンドパスフィルタモジュール及びモジュール基板
JP2016171170A (ja) * 2015-03-12 2016-09-23 日本電信電話株式会社 集積回路内信号伝播構造
JP2018041767A (ja) * 2016-09-05 2018-03-15 アンリツ株式会社 波形整形回路及びその製造方法とパルスパターン発生器

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5540912B2 (ja) * 2009-08-12 2014-07-02 株式会社村田製作所 積層型フィルタ
FR2961345A1 (fr) * 2010-06-10 2011-12-16 St Microelectronics Tours Sas Circuit integre passif
CN103824755A (zh) * 2012-11-16 2014-05-28 中国科学院上海微系统与信息技术研究所 高q电感及制备方法
JP2014170811A (ja) * 2013-03-01 2014-09-18 Sony Corp ＣＳＰ（ＣｈｉｐＳｉｚｅＰａｃｋａｇｅ）
CN105140218A (zh) * 2015-09-01 2015-12-09 中国科学院上海微系统与信息技术研究所 一种高品质因数电感制造方法
CN105118771A (zh) * 2015-09-01 2015-12-02 中国科学院上海微系统与信息技术研究所 一种高品质因数电容制造方法
DE102016107678B4 (de) * 2016-04-26 2023-12-28 Infineon Technologies Ag Halbleitervorrichtungen mit on-chip-antennen und deren herstellung
CN105895507B (zh) * 2016-05-09 2018-12-14 中国科学院上海微系统与信息技术研究所 基于绝缘体上硅衬底的射频电容元件及其制备方法
DE102019109200B4 (de) * 2019-04-08 2024-03-07 Infineon Technologies Ag Halbleitervorrichtungen mit nicht-galvanischer verbindung
US20210281234A1 (en) * 2020-03-07 2021-09-09 Qualcomm Incorporated Hybrid three dimensional inductor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677407A (ja) * 1992-04-06 1994-03-18 Nippon Precision Circuits Kk 半導体装置
JP2003297924A (ja) * 2002-03-28 2003-10-17 Toshiba Corp 高周波フィルタ及び高周波集積回路
JP2005072588A (ja) * 2003-08-22 2005-03-17 Agere Systems Inc 半導体基体中に形成されたスパイラル形状インダクタ及びそのインダクタを形成するための方法
JP2005229057A (ja) * 2004-02-16 2005-08-25 Mitsubishi Electric Corp 高周波集積回路とその製造方法
JP2007053124A (ja) * 2005-08-15 2007-03-01 Renesas Technology Corp 半導体装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959705A (en) * 1988-10-17 1990-09-25 Ford Microelectronics, Inc. Three metal personalization of application specific monolithic microwave integrated circuit
JP3631667B2 (ja) 2000-06-29 2005-03-23 京セラ株式会社 配線基板およびその導波管との接続構造
JP4159378B2 (ja) * 2002-04-25 2008-10-01 三菱電機株式会社 高周波装置とその製造方法
JP2004235602A (ja) * 2002-12-06 2004-08-19 Matsushita Electric Ind Co Ltd 高周波回路とその製造方法
US8359349B2 (en) * 2004-03-18 2013-01-22 Nokia Corporation System and associated terminal, method and computer program product for uploading content
JP2007220874A (ja) 2006-02-16 2007-08-30 Murata Mfg Co Ltd 積層型セラミック電子部品及びｌｃノイズフィルタ
US7518229B2 (en) 2006-08-03 2009-04-14 International Business Machines Corporation Versatile Si-based packaging with integrated passive components for mmWave applications
US7855685B2 (en) 2007-09-28 2010-12-21 Delphi Technologies, Inc. Microwave communication package
US7710329B2 (en) * 2007-11-26 2010-05-04 Infineon Technologies Austria Ag System including an inter-chip communication system
TWI441307B (zh) * 2009-08-07 2014-06-11 新力股份有限公司 內插器、模組及包括該內插器之電子裝置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677407A (ja) * 1992-04-06 1994-03-18 Nippon Precision Circuits Kk 半導体装置
JP2003297924A (ja) * 2002-03-28 2003-10-17 Toshiba Corp 高周波フィルタ及び高周波集積回路
JP2005072588A (ja) * 2003-08-22 2005-03-17 Agere Systems Inc 半導体基体中に形成されたスパイラル形状インダクタ及びそのインダクタを形成するための方法
JP2005229057A (ja) * 2004-02-16 2005-08-25 Mitsubishi Electric Corp 高周波集積回路とその製造方法
JP2007053124A (ja) * 2005-08-15 2007-03-01 Renesas Technology Corp 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012029016A (ja) * 2010-07-22 2012-02-09 Tdk Corp バンドパスフィルタモジュール及びモジュール基板
JP2016171170A (ja) * 2015-03-12 2016-09-23 日本電信電話株式会社 集積回路内信号伝播構造
JP2018041767A (ja) * 2016-09-05 2018-03-15 アンリツ株式会社 波形整形回路及びその製造方法とパルスパターン発生器

Also Published As

Publication number Publication date
US8546911B2 (en) 2013-10-01
CN101997506B (zh) 2015-09-16
CN101997506A (zh) 2011-03-30
US20110031583A1 (en) 2011-02-10

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