CN101997506B - 高频装置 - Google Patents

高频装置 Download PDF

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Publication number
CN101997506B
CN101997506B CN201010243766.4A CN201010243766A CN101997506B CN 101997506 B CN101997506 B CN 101997506B CN 201010243766 A CN201010243766 A CN 201010243766A CN 101997506 B CN101997506 B CN 101997506B
Authority
CN
China
Prior art keywords
substrate
frequency device
dielectric
dielectric layer
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201010243766.4A
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English (en)
Chinese (zh)
Other versions
CN101997506A (zh
Inventor
秋叶朗
御手洗俊
池田浩一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN101997506A publication Critical patent/CN101997506A/zh
Application granted granted Critical
Publication of CN101997506B publication Critical patent/CN101997506B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0064—Constructional details comprising semiconductor material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/175—Series LC in series path
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/17—Structural details of sub-circuits of frequency selective networks
    • H03H7/1741—Comprising typical LC combinations, irrespective of presence and location of additional resistors
    • H03H7/1775—Parallel LC in shunt or branch path

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Filters And Equalizers (AREA)
CN201010243766.4A 2009-08-07 2010-08-02 高频装置 Expired - Fee Related CN101997506B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009184674A JP2011040882A (ja) 2009-08-07 2009-08-07 高周波デバイス
JP184674/09 2009-08-07

Publications (2)

Publication Number Publication Date
CN101997506A CN101997506A (zh) 2011-03-30
CN101997506B true CN101997506B (zh) 2015-09-16

Family

ID=43534177

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010243766.4A Expired - Fee Related CN101997506B (zh) 2009-08-07 2010-08-02 高频装置

Country Status (3)

Country Link
US (1) US8546911B2 (https=)
JP (1) JP2011040882A (https=)
CN (1) CN101997506B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5540912B2 (ja) * 2009-08-12 2014-07-02 株式会社村田製作所 積層型フィルタ
FR2961345A1 (fr) * 2010-06-10 2011-12-16 St Microelectronics Tours Sas Circuit integre passif
JP5339092B2 (ja) * 2010-07-22 2013-11-13 Ｔｄｋ株式会社 バンドパスフィルタモジュール及びモジュール基板
CN103824755A (zh) * 2012-11-16 2014-05-28 中国科学院上海微系统与信息技术研究所 高q电感及制备方法
JP2014170811A (ja) * 2013-03-01 2014-09-18 Sony Corp ＣＳＰ（ＣｈｉｐＳｉｚｅＰａｃｋａｇｅ）
JP6334439B2 (ja) * 2015-03-12 2018-05-30 日本電信電話株式会社 集積回路内信号伝播構造
CN105140218A (zh) * 2015-09-01 2015-12-09 中国科学院上海微系统与信息技术研究所 一种高品质因数电感制造方法
CN105118771A (zh) * 2015-09-01 2015-12-02 中国科学院上海微系统与信息技术研究所 一种高品质因数电容制造方法
DE102016107678B4 (de) * 2016-04-26 2023-12-28 Infineon Technologies Ag Halbleitervorrichtungen mit on-chip-antennen und deren herstellung
CN105895507B (zh) * 2016-05-09 2018-12-14 中国科学院上海微系统与信息技术研究所 基于绝缘体上硅衬底的射频电容元件及其制备方法
JP2018041767A (ja) * 2016-09-05 2018-03-15 アンリツ株式会社 波形整形回路及びその製造方法とパルスパターン発生器
DE102019109200B4 (de) * 2019-04-08 2024-03-07 Infineon Technologies Ag Halbleitervorrichtungen mit nicht-galvanischer verbindung
US20210281234A1 (en) * 2020-03-07 2021-09-09 Qualcomm Incorporated Hybrid three dimensional inductor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959705A (en) * 1988-10-17 1990-09-25 Ford Microelectronics, Inc. Three metal personalization of application specific monolithic microwave integrated circuit
EP2043150A2 (en) * 2007-09-28 2009-04-01 Delphi Technologies, Inc. Microwave Communication Package

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0677407A (ja) * 1992-04-06 1994-03-18 Nippon Precision Circuits Kk 半導体装置
JP3631667B2 (ja) 2000-06-29 2005-03-23 京セラ株式会社 配線基板およびその導波管との接続構造
JP4130323B2 (ja) * 2002-03-28 2008-08-06 株式会社東芝 高周波フィルタ及び高周波集積回路
JP4159378B2 (ja) * 2002-04-25 2008-10-01 三菱電機株式会社 高周波装置とその製造方法
JP2004235602A (ja) * 2002-12-06 2004-08-19 Matsushita Electric Ind Co Ltd 高周波回路とその製造方法
US7075167B2 (en) * 2003-08-22 2006-07-11 Agere Systems Inc. Spiral inductor formed in a semiconductor substrate
JP4541718B2 (ja) * 2004-02-16 2010-09-08 三菱電機株式会社 高周波集積回路とその製造方法
US8359349B2 (en) * 2004-03-18 2013-01-22 Nokia Corporation System and associated terminal, method and computer program product for uploading content
JP2007053124A (ja) * 2005-08-15 2007-03-01 Renesas Technology Corp 半導体装置
JP2007220874A (ja) 2006-02-16 2007-08-30 Murata Mfg Co Ltd 積層型セラミック電子部品及びｌｃノイズフィルタ
US7518229B2 (en) 2006-08-03 2009-04-14 International Business Machines Corporation Versatile Si-based packaging with integrated passive components for mmWave applications
US7710329B2 (en) * 2007-11-26 2010-05-04 Infineon Technologies Austria Ag System including an inter-chip communication system
TWI441307B (zh) * 2009-08-07 2014-06-11 新力股份有限公司 內插器、模組及包括該內插器之電子裝置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4959705A (en) * 1988-10-17 1990-09-25 Ford Microelectronics, Inc. Three metal personalization of application specific monolithic microwave integrated circuit
EP2043150A2 (en) * 2007-09-28 2009-04-01 Delphi Technologies, Inc. Microwave Communication Package

Also Published As

Publication number Publication date
US8546911B2 (en) 2013-10-01
JP2011040882A (ja) 2011-02-24
CN101997506A (zh) 2011-03-30
US20110031583A1 (en) 2011-02-10

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