JP2010537943A - 気相合成法を利用したフッ素含有酸化マグネシウム粉末及びその製造方法 - Google Patents
気相合成法を利用したフッ素含有酸化マグネシウム粉末及びその製造方法 Download PDFInfo
- Publication number
- JP2010537943A JP2010537943A JP2010523964A JP2010523964A JP2010537943A JP 2010537943 A JP2010537943 A JP 2010537943A JP 2010523964 A JP2010523964 A JP 2010523964A JP 2010523964 A JP2010523964 A JP 2010523964A JP 2010537943 A JP2010537943 A JP 2010537943A
- Authority
- JP
- Japan
- Prior art keywords
- fluorine
- magnesium oxide
- gas
- oxide powder
- magnesium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F5/00—Compounds of magnesium
- C01F5/02—Magnesia
- C01F5/04—Magnesia by oxidation of metallic magnesium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F5/00—Compounds of magnesium
- C01F5/02—Magnesia
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/61—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing fluorine, chlorine, bromine, iodine or unspecified halogen elements
- C09K11/615—Halogenides
- C09K11/616—Halogenides with alkali or alkaline earth metals
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
- H01J11/34—Vessels, containers or parts thereof, e.g. substrates
- H01J11/40—Layers for protecting or enhancing the electron emission, e.g. MgO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Geology (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
- Gas-Filled Discharge Tubes (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
図1の装置を利用して酸化マグネシウム粉末を製造した。
前記比較例と同一な装置を利用して、フッ素含有酸化マグネシウム粉末を製造した。
前記実施例1と同一な条件及び装置を利用して酸化マグネシウム粉末を製造した。
前記実施例1と同一な条件及び装置を利用して、フッ素含有酸化マグネシウム粉末を製造した。
気相合成法により製造された比較例1−1、実施例1−1の酸化マグネシウム粉末を、プラズマディスプレイパネルの誘電体保護膜である酸化マグネシウム蒸着膜表面にスプレー塗布して製造した誘電体保護膜に対する放電効率、輝度を測定した。放電特性は、放電ガスとしてXe(キセノン)とNe(ネオン)の混合ガスを利用し、Xe(キセノン)20重量%含量で測定した。その結果を下記表2に示した。
2 耐火物
3 マグネシウム蒸発坩堝
4 マグネシウム溶湯
5 発熱体
6 フッ素含有気体注入口
7 反応器本体
8 酸素含有気体注入口
9 冷却用ガス注入口
10 粉末を含有した気体の排気管
11 酸化マグネシウム粉末の捕集装置
12 酸化マグネシウム粉末の捕集容器
13 ブロワー(Blower)
Claims (5)
- BET比表面積が0.1〜50m2/g範囲にあって、酸化マグネシウム粉末の形状が単結晶六面体または多結晶六面体構造であり、マグネシウム気体にフッ素含有気体と酸素含有気体を噴射して製造され、及び前記酸化マグネシウム粉末は、電子線により励起され、220〜320nm範囲と400〜600nmの波長範囲内に弱いピークを示す陰極線発光をすることを特徴とする、気相合成法を利用したフッ素含有酸化マグネシウム粉末。
- 前記酸化マグネシウム粉末におけるフッ素含量が0.001〜2重量%範囲であり、酸化マグネシウムの純度が98重量%以上であることを特徴とする、請求項1に記載の気相合成法を利用したフッ素含有酸化マグネシウム粉末。
- フッ素と酸素気体が存在する雰囲気で金属マグネシウムを蒸発させる段階と、マグネシウム気体を、フッ素と酸素を含有する気体と衝突させる段階と、フッ素含有酸化マグネシウムを冷却させて微粒子に製造する段階とを含むことを特徴とする、気相合成法を利用したフッ素含有酸化マグネシウム粉末の製造方法。
- 前記フッ素含有気体は、フッ素ガス、フッ化水素ガス、フッ化アンモニウム、フッ素含有有機化合物、SF4、SF6、S2F10、フッ化炭素(CxFy、x=1〜2、y=1〜6)、SbF4及びNF3ガスからなる群から選択されたことを特徴とする、請求項3に記載の気相合成法を利用したフッ素含有酸化マグネシウム粉末の製造方法。
- 前記フッ素含有気体は、フッ素含有量が5〜5,000ppmとして供給されて、フッ素含有気体と酸素含有気体は、1〜50l/minの流量で供給されることを特徴とする、請求項3に記載の気相合成法を利用したフッ素含有酸化マグネシウム粉末の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070096503A KR100918375B1 (ko) | 2007-09-21 | 2007-09-21 | 기상합성법을 이용한 불소 함유 산화마그네슘 분말 및 그제조방법 |
KR10-2007-0096503 | 2007-09-21 | ||
PCT/KR2008/005481 WO2009038334A2 (en) | 2007-09-21 | 2008-09-18 | Fluorine-containing magnesium oxide powder prepared by vapor phase reaction and method of preparing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010537943A true JP2010537943A (ja) | 2010-12-09 |
JP5336492B2 JP5336492B2 (ja) | 2013-11-06 |
Family
ID=40468589
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010523964A Expired - Fee Related JP5336492B2 (ja) | 2007-09-21 | 2008-09-18 | 気相合成法を利用したフッ素含有酸化マグネシウム粉末及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7972586B2 (ja) |
EP (1) | EP2155609A4 (ja) |
JP (1) | JP5336492B2 (ja) |
KR (1) | KR100918375B1 (ja) |
CN (1) | CN101784483A (ja) |
WO (1) | WO2009038334A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012063444A1 (ja) * | 2010-11-12 | 2012-05-18 | タテホ化学工業株式会社 | フッ素含有酸化マグネシウム発光体及びその製造方法 |
JP2013193910A (ja) * | 2012-03-19 | 2013-09-30 | Ube Material Industries Ltd | 酸化マグネシウム粉末 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100918375B1 (ko) * | 2007-09-21 | 2009-09-21 | 대주전자재료 주식회사 | 기상합성법을 이용한 불소 함유 산화마그네슘 분말 및 그제조방법 |
WO2014126273A1 (ko) * | 2013-02-13 | 2014-08-21 | 한국에너지기술연구원 | 고순도 MOx 나노 구조체 제조 장치 및 그 제조 방법 |
CN105315992A (zh) * | 2014-06-25 | 2016-02-10 | 松下知识产权经营株式会社 | 荧光体、深紫外光发光器件以及荧光体的制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62105920A (ja) * | 1985-10-29 | 1987-05-16 | Ube Ind Ltd | 高純度酸化マグネシウム微粉末の製造方法 |
JP2001035382A (ja) * | 1998-06-30 | 2001-02-09 | Mitsubishi Materials Corp | Fpd用保護膜及びその製造方法並びにこれを用いたfpd |
JP2004182521A (ja) * | 2002-12-02 | 2004-07-02 | Ube Material Industries Ltd | 高純度酸化マグネシウム微粉末の製造方法 |
KR20070083428A (ko) * | 2006-02-21 | 2007-08-24 | 우베 마테리알즈 가부시키가이샤 | 불소 함유 산화 마그네슘 분말 및 그 제조 방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59213619A (ja) * | 1983-05-20 | 1984-12-03 | Ube Ind Ltd | 高純度マグネシア微粉末の製造方法 |
US5910297A (en) * | 1997-07-31 | 1999-06-08 | E. I. Du Pont De Nemours And Company | Alkaline earth fluoride manufacturing process |
US6821616B1 (en) | 1998-12-10 | 2004-11-23 | Mitsubishi Materials Corporation | Protective thin film for FPDS, method for producing said thin film and FPDS using said thin film |
KR100297059B1 (ko) | 1999-09-28 | 2001-11-02 | 김석기 | 스테레오 비젼의 3차원 정보를 이용한 동작 검출기 및 그 방법 |
WO2003072492A1 (en) * | 2002-02-22 | 2003-09-04 | Conoco Inc. | Promoted nickel-magnesium oxide catalysts and process for producing synthesis gas |
WO2006111568A2 (en) * | 2005-04-20 | 2006-10-26 | Etech Ag | Novel materials used for emitting light |
KR100918375B1 (ko) * | 2007-09-21 | 2009-09-21 | 대주전자재료 주식회사 | 기상합성법을 이용한 불소 함유 산화마그네슘 분말 및 그제조방법 |
-
2007
- 2007-09-21 KR KR1020070096503A patent/KR100918375B1/ko not_active IP Right Cessation
-
2008
- 2008-09-18 US US12/601,254 patent/US7972586B2/en not_active Expired - Fee Related
- 2008-09-18 JP JP2010523964A patent/JP5336492B2/ja not_active Expired - Fee Related
- 2008-09-18 EP EP08832664.0A patent/EP2155609A4/en not_active Withdrawn
- 2008-09-18 WO PCT/KR2008/005481 patent/WO2009038334A2/en active Application Filing
- 2008-09-18 CN CN200880025379A patent/CN101784483A/zh active Pending
-
2011
- 2011-01-26 US US13/013,888 patent/US8303928B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62105920A (ja) * | 1985-10-29 | 1987-05-16 | Ube Ind Ltd | 高純度酸化マグネシウム微粉末の製造方法 |
JP2001035382A (ja) * | 1998-06-30 | 2001-02-09 | Mitsubishi Materials Corp | Fpd用保護膜及びその製造方法並びにこれを用いたfpd |
JP2004182521A (ja) * | 2002-12-02 | 2004-07-02 | Ube Material Industries Ltd | 高純度酸化マグネシウム微粉末の製造方法 |
KR20070083428A (ko) * | 2006-02-21 | 2007-08-24 | 우베 마테리알즈 가부시키가이샤 | 불소 함유 산화 마그네슘 분말 및 그 제조 방법 |
Non-Patent Citations (1)
Title |
---|
JPN6012047341; 林 真 ほか: 窯業協会誌 1974年,第82巻,第4号, 第229〜233ページ * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012063444A1 (ja) * | 2010-11-12 | 2012-05-18 | タテホ化学工業株式会社 | フッ素含有酸化マグネシウム発光体及びその製造方法 |
JP2012101988A (ja) * | 2010-11-12 | 2012-05-31 | Tateho Chemical Industries Co Ltd | フッ素含有酸化マグネシウム発光体及びその製造方法 |
JP2013193910A (ja) * | 2012-03-19 | 2013-09-30 | Ube Material Industries Ltd | 酸化マグネシウム粉末 |
Also Published As
Publication number | Publication date |
---|---|
US7972586B2 (en) | 2011-07-05 |
US20100166639A1 (en) | 2010-07-01 |
US8303928B2 (en) | 2012-11-06 |
JP5336492B2 (ja) | 2013-11-06 |
EP2155609A2 (en) | 2010-02-24 |
US20110117005A1 (en) | 2011-05-19 |
WO2009038334A2 (en) | 2009-03-26 |
WO2009038334A3 (en) | 2009-05-07 |
KR100918375B1 (ko) | 2009-09-21 |
WO2009038334A4 (en) | 2009-06-25 |
EP2155609A4 (en) | 2014-05-21 |
CN101784483A (zh) | 2010-07-21 |
KR20090030863A (ko) | 2009-03-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5336492B2 (ja) | 気相合成法を利用したフッ素含有酸化マグネシウム粉末及びその製造方法 | |
Jung et al. | Improved photoluminescence of BaMgAl10O17 blue phosphor prepared by spray pyrolysis | |
JP6237221B2 (ja) | 非晶質酸化物およびそのエレクトライドの薄膜の製造方法 | |
CN103108843B (zh) | 含氟氧化镁发光体及其制造方法 | |
JP5174634B2 (ja) | 酸化マグネシウム固溶体粒子及びその製法 | |
JP5230143B2 (ja) | フッ素含有酸化マグネシウム焼成物粉末の製造方法 | |
JP4696342B2 (ja) | バリウム系複合金属酸化物粉末の製造方法 | |
JP4575035B2 (ja) | 単結晶酸化マグネシウム焼結体及びその製造方法並びにプラズマディスプレイパネル用保護膜 | |
JP5602811B2 (ja) | 塩素含有酸化マグネシウム粉末 | |
JP2009215486A (ja) | 球状蛍光体粒子、その製造方法並びにそれが含有された樹脂組成物及びガラス組成物 | |
Roh et al. | Morphological control of Zn2SiO4: Mn phosphor particles by adding citric acid in spray pyrolysis process | |
JP4638767B2 (ja) | 蓚酸バリウムチタニルの製造方法及びチタン酸バリウムの製造方法 | |
JP4818318B2 (ja) | 酸化マグネシウム蒸着材及びその製造方法 | |
JP2009146899A (ja) | マグネシウム酸化物粒子が表面に付着されたマグネシウム酸化物含有膜を含んだプラズマディスプレイパネル用保護膜、その製造方法、及び該保護膜を具備したプラズマディスプレイパネル | |
JP2006274244A (ja) | 青色発光蛍光体粉末及びその製造方法 | |
KR100912176B1 (ko) | Pdp 보호막용 나노분말의 제조방법 | |
JP4373670B2 (ja) | 真空紫外線励起発光体の製造方法およびプラズマディスプレイパネルの製造方法 | |
KR101055434B1 (ko) | PDP보호막용 CaAlO계 나노분말의 제조방법 | |
JP2010059049A (ja) | 保護膜の材料、その製造方法、それを利用して形成した保護膜を備えるpdp | |
KR100956964B1 (ko) | 플라즈마 디스플레이 패널용 금속 함유 산화마그네슘 분말및 그 제조방법 | |
KR101080439B1 (ko) | PDP보호막용 MgO계 나노분말의 제조방법 | |
JP4850107B2 (ja) | 酸化アルミニウム含有酸化マグネシウム焼成物粉末 | |
KR20100021397A (ko) | 플라즈마 디스플레이 패널용 금속 함유 산화마그네슘 분말 및 그 제조방법 | |
JP2002322471A (ja) | 蛍光体及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120911 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121211 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121218 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130212 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130219 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130319 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130613 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130709 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130801 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |