JP2010536142A5 - - Google Patents

Download PDF

Info

Publication number
JP2010536142A5
JP2010536142A5 JP2010519881A JP2010519881A JP2010536142A5 JP 2010536142 A5 JP2010536142 A5 JP 2010536142A5 JP 2010519881 A JP2010519881 A JP 2010519881A JP 2010519881 A JP2010519881 A JP 2010519881A JP 2010536142 A5 JP2010536142 A5 JP 2010536142A5
Authority
JP
Japan
Prior art keywords
plasma
radiation
substance
radiation source
fuel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010519881A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010536142A (ja
Filing date
Publication date
Priority claimed from US11/882,853 external-priority patent/US8493548B2/en
Application filed filed Critical
Publication of JP2010536142A publication Critical patent/JP2010536142A/ja
Publication of JP2010536142A5 publication Critical patent/JP2010536142A5/ja
Pending legal-status Critical Current

Links

JP2010519881A 2007-08-06 2008-08-05 リソグラフィ装置およびデバイス製造方法 Pending JP2010536142A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/882,853 US8493548B2 (en) 2007-08-06 2007-08-06 Lithographic apparatus and device manufacturing method
PCT/NL2008/050536 WO2009020390A1 (en) 2007-08-06 2008-08-05 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
JP2010536142A JP2010536142A (ja) 2010-11-25
JP2010536142A5 true JP2010536142A5 (enExample) 2011-09-22

Family

ID=39846624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010519881A Pending JP2010536142A (ja) 2007-08-06 2008-08-05 リソグラフィ装置およびデバイス製造方法

Country Status (8)

Country Link
US (2) US8493548B2 (enExample)
EP (1) EP2186386A1 (enExample)
JP (1) JP2010536142A (enExample)
KR (1) KR101331069B1 (enExample)
CN (1) CN101779524B (enExample)
NL (1) NL1035746A1 (enExample)
TW (1) TWI398900B (enExample)
WO (1) WO2009020390A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7872244B2 (en) * 2007-08-08 2011-01-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5896910B2 (ja) * 2009-10-29 2016-03-30 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． ガス放電光源用の電極システム
US10217625B2 (en) * 2015-03-11 2019-02-26 Kla-Tencor Corporation Continuous-wave laser-sustained plasma illumination source
KR102669150B1 (ko) 2016-07-27 2024-05-27 삼성전자주식회사 자외선(uv) 노광 장치를 구비한 극자외선(euv) 노광 시스템
US12437883B1 (en) 2019-03-27 2025-10-07 Consolidated Nuclear Security, LLC Diode assembly for pulsed fusion events
US11437152B1 (en) 2019-06-27 2022-09-06 Consolidated Nuclear Security, LLC Diode assembly and method of forming a diode assembly for pulsed fusion events

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3586244T2 (de) * 1984-12-26 2000-04-20 Kabushiki Kaisha Toshiba Vorrichtung zur Erzeugung von Weich-Röntgenstrahlen durch ein Hochenergiebündel.
US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
WO1991017483A1 (de) 1990-05-02 1991-11-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Belichtungsvorrichtung
SE502094C2 (sv) * 1991-08-16 1995-08-14 Sandvik Ab Metod för diamantbeläggning med mikrovågsplasma
JPH0917595A (ja) * 1995-06-28 1997-01-17 Nikon Corp Ｘ線発生装置
DE69711929T2 (de) 1997-01-29 2002-09-05 Micronic Laser Systems Ab, Taeby Verfahren und gerät zur erzeugung eines musters auf einem mit fotoresist beschichteten substrat mittels fokusiertem laserstrahl
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US6232613B1 (en) 1997-03-11 2001-05-15 University Of Central Florida Debris blocker/collector and emission enhancer for discharge sources
US6815700B2 (en) * 1997-05-12 2004-11-09 Cymer, Inc. Plasma focus light source with improved pulse power system
US7329886B2 (en) * 1998-05-05 2008-02-12 Carl Zeiss Smt Ag EUV illumination system having a plurality of light sources for illuminating an optical element
TWI246872B (en) * 1999-12-17 2006-01-01 Asml Netherlands Bv Radiation source for use in lithographic projection apparatus
US6972421B2 (en) 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
DE10139677A1 (de) * 2001-04-06 2002-10-17 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung und weicher Röntgenstrahlung
KR100408405B1 (ko) * 2001-05-03 2003-12-06 삼성전자주식회사 반도체 소자의 제조 장치
US7372056B2 (en) * 2005-06-29 2008-05-13 Cymer, Inc. LPP EUV plasma source material target delivery system
DE10219173A1 (de) * 2002-04-30 2003-11-20 Philips Intellectual Property Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung
CN101795527B (zh) 2002-09-19 2013-02-20 Asml荷兰有限公司 辐射源、光刻装置和器件制造方法
SG129259A1 (en) * 2002-10-03 2007-02-26 Asml Netherlands Bv Radiation source lithographic apparatus, and device manufacturing method
DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
DE10310623B8 (de) * 2003-03-10 2005-12-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen eines Plasmas durch elektrische Entladung in einem Entladungsraum
DE10342239B4 (de) * 2003-09-11 2018-06-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung
US20070019789A1 (en) * 2004-03-29 2007-01-25 Jmar Research, Inc. Systems and methods for achieving a required spot says for nanoscale surface analysis using soft x-rays
JP4337648B2 (ja) * 2004-06-24 2009-09-30 株式会社ニコン Ｅｕｖ光源、ｅｕｖ露光装置、及び半導体デバイスの製造方法
JP4301094B2 (ja) * 2004-06-25 2009-07-22 トヨタ自動車株式会社 燃料又は還元剤添加装置及び方法、並びにプラズマトーチ
DE102004042501A1 (de) * 2004-08-31 2006-03-16 Xtreme Technologies Gmbh Vorrichtung zur Bereitstellung eines reproduzierbaren Targetstromes für die energiestrahlinduzierte Erzeugung kurzwelliger elektromagnetischer Strahlung
US7154109B2 (en) * 2004-09-30 2006-12-26 Intel Corporation Method and apparatus for producing electromagnetic radiation
DE102005041567B4 (de) 2005-08-30 2009-03-05 Xtreme Technologies Gmbh EUV-Strahlungsquelle mit hoher Strahlungsleistung auf Basis einer Gasentladung
US7462851B2 (en) * 2005-09-23 2008-12-09 Asml Netherlands B.V. Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby
US7332731B2 (en) * 2005-12-06 2008-02-19 Asml Netherlands, B.V. Radiation system and lithographic apparatus
US7705331B1 (en) * 2006-06-29 2010-04-27 Kla-Tencor Technologies Corp. Methods and systems for providing illumination of a specimen for a process performed on the specimen
TW200808134A (en) * 2006-07-28 2008-02-01 Ushio Electric Inc Light source device for producing extreme ultraviolet radiation and method of generating extreme ultraviolet radiation

Similar Documents

Publication Publication Date Title
JP2010536142A5 (enExample)
US10766248B2 (en) Method and apparatus for exposing printing plates using light emitting diodes
TW200617616A (en) Lithographic apparatus and device manufacturing method
TW200745727A (en) Lithographic projection apparatus, gas purging method, device manufacturing method and purge gas supply system
TW200801848A (en) Lithographic projection apparatus, gas purging method, device manufacturing method and purge gas supply system
JP2011530823A5 (enExample)
WO2008010710A3 (en) Correction of spatial instability of an euv source by laser beam steering
JP6866463B2 (ja) ターゲット材料を供給するための装置及び方法
TW200507064A (en) Exposure apparatus and method for manufacturing device
JP2010534946A5 (enExample)
CN102736409B (zh) 在单个印刷板上通过uv固化形成的平顶和圆顶结构
NL1036272A1 (nl) Radiation source, lithographic apparatus and device manufacturing method.
NL2009372A (en) Methods to control euv exposure dose and euv lithographic methods and apparatus using such methods.
TW200834267A (en) Process, apparatus and device
EP2475229A1 (en) Plasma light source
WO2014202585A3 (en) Lithographic method and system
CN1497349A (zh) 辐射源、光刻装置和器件的制造方法
JP2021513097A (ja) Ｅｕｖチャンバにおける構造物表面の洗浄
JP2010539700A5 (enExample)
TW200500822A (en) Lithographic apparatus and device manufacturing method
TWI566054B (zh) Lighting device with discharge lamp
EP2203033A3 (en) Extreme ultraviolet light source device
EP1653283A3 (en) Lithographic apparatus and device manufacturing method
JP2008544574A5 (enExample)
US8809818B2 (en) EUV light source, EUV exposure apparatus, and electronic device manufacturing method