KR101331069B1 - 리소그래피 장치 및 디바이스 제조 방법 - Google Patents

리소그래피 장치 및 디바이스 제조 방법 Download PDF

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KR101331069B1
KR101331069B1 KR1020107002713A KR20107002713A KR101331069B1 KR 101331069 B1 KR101331069 B1 KR 101331069B1 KR 1020107002713 A KR1020107002713 A KR 1020107002713A KR 20107002713 A KR20107002713 A KR 20107002713A KR 101331069 B1 KR101331069 B1 KR 101331069B1
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South Korea
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radiation
plasma
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fuel
source
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Korean (ko)
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KR20100029849A (ko
Inventor
블라디미르 비탈에비치 이바노프
바딤 예프겐예비치 바니네
콘스탄틴 니콜라에비치 코셀레프
블라디미르 미하일로비치 크리브트선
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에이에스엠엘 네델란즈 비.브이.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020107002713A 2007-08-06 2008-08-05 리소그래피 장치 및 디바이스 제조 방법 Expired - Fee Related KR101331069B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/882,853 2007-08-06
US11/882,853 US8493548B2 (en) 2007-08-06 2007-08-06 Lithographic apparatus and device manufacturing method
PCT/NL2008/050536 WO2009020390A1 (en) 2007-08-06 2008-08-05 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
KR20100029849A KR20100029849A (ko) 2010-03-17
KR101331069B1 true KR101331069B1 (ko) 2013-11-19

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KR1020107002713A Expired - Fee Related KR101331069B1 (ko) 2007-08-06 2008-08-05 리소그래피 장치 및 디바이스 제조 방법

Country Status (8)

Country Link
US (2) US8493548B2 (enExample)
EP (1) EP2186386A1 (enExample)
JP (1) JP2010536142A (enExample)
KR (1) KR101331069B1 (enExample)
CN (1) CN101779524B (enExample)
NL (1) NL1035746A1 (enExample)
TW (1) TWI398900B (enExample)
WO (1) WO2009020390A1 (enExample)

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US7872244B2 (en) * 2007-08-08 2011-01-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5896910B2 (ja) * 2009-10-29 2016-03-30 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． ガス放電光源用の電極システム
US10217625B2 (en) * 2015-03-11 2019-02-26 Kla-Tencor Corporation Continuous-wave laser-sustained plasma illumination source
KR102669150B1 (ko) 2016-07-27 2024-05-27 삼성전자주식회사 자외선(uv) 노광 장치를 구비한 극자외선(euv) 노광 시스템
US12437883B1 (en) 2019-03-27 2025-10-07 Consolidated Nuclear Security, LLC Diode assembly for pulsed fusion events
US11437152B1 (en) 2019-06-27 2022-09-06 Consolidated Nuclear Security, LLC Diode assembly and method of forming a diode assembly for pulsed fusion events

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KR20010062437A (ko) * 1999-12-17 2001-07-07 에이에스엠 리소그라피 비.브이. 전사투영장치용 방사원
KR20040025632A (ko) * 2002-09-19 2004-03-24 에이에스엠엘 네델란즈 비.브이. 방사선소스, 리소그래피장치 및 디바이스 제조방법
KR20040101571A (ko) * 2002-04-30 2004-12-02 코닌클리케 필립스 일렉트로닉스 엔.브이. 극자외선 복사를 발생시키는 방법
KR20070019736A (ko) * 2004-06-24 2007-02-15 가부시키가이샤 니콘 Ｅｕｖ 광원, ｅｕｖ 노광 장치 및 반도체 장치의 제조방법

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US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
WO1991017483A1 (de) 1990-05-02 1991-11-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Belichtungsvorrichtung
SE502094C2 (sv) * 1991-08-16 1995-08-14 Sandvik Ab Metod för diamantbeläggning med mikrovågsplasma
JPH0917595A (ja) * 1995-06-28 1997-01-17 Nikon Corp Ｘ線発生装置
DE69711929T2 (de) 1997-01-29 2002-09-05 Micronic Laser Systems Ab, Taeby Verfahren und gerät zur erzeugung eines musters auf einem mit fotoresist beschichteten substrat mittels fokusiertem laserstrahl
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US6232613B1 (en) 1997-03-11 2001-05-15 University Of Central Florida Debris blocker/collector and emission enhancer for discharge sources
US6815700B2 (en) * 1997-05-12 2004-11-09 Cymer, Inc. Plasma focus light source with improved pulse power system
US7329886B2 (en) * 1998-05-05 2008-02-12 Carl Zeiss Smt Ag EUV illumination system having a plurality of light sources for illuminating an optical element
US6972421B2 (en) 2000-06-09 2005-12-06 Cymer, Inc. Extreme ultraviolet light source
DE10139677A1 (de) * 2001-04-06 2002-10-17 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung und weicher Röntgenstrahlung
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DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
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DE10342239B4 (de) * 2003-09-11 2018-06-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung
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JP4301094B2 (ja) * 2004-06-25 2009-07-22 トヨタ自動車株式会社 燃料又は還元剤添加装置及び方法、並びにプラズマトーチ
DE102004042501A1 (de) * 2004-08-31 2006-03-16 Xtreme Technologies Gmbh Vorrichtung zur Bereitstellung eines reproduzierbaren Targetstromes für die energiestrahlinduzierte Erzeugung kurzwelliger elektromagnetischer Strahlung
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DE102005041567B4 (de) 2005-08-30 2009-03-05 Xtreme Technologies Gmbh EUV-Strahlungsquelle mit hoher Strahlungsleistung auf Basis einer Gasentladung
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KR20010062437A (ko) * 1999-12-17 2001-07-07 에이에스엠 리소그라피 비.브이. 전사투영장치용 방사원
KR20040101571A (ko) * 2002-04-30 2004-12-02 코닌클리케 필립스 일렉트로닉스 엔.브이. 극자외선 복사를 발생시키는 방법
KR20040025632A (ko) * 2002-09-19 2004-03-24 에이에스엠엘 네델란즈 비.브이. 방사선소스, 리소그래피장치 및 디바이스 제조방법
KR20070019736A (ko) * 2004-06-24 2007-02-15 가부시키가이샤 니콘 Ｅｕｖ 광원, ｅｕｖ 노광 장치 및 반도체 장치의 제조방법

Also Published As

Publication number Publication date
US20130287968A1 (en) 2013-10-31
WO2009020390A1 (en) 2009-02-12
KR20100029849A (ko) 2010-03-17
US20090040491A1 (en) 2009-02-12
US8493548B2 (en) 2013-07-23
EP2186386A1 (en) 2010-05-19
CN101779524B (zh) 2012-12-05
CN101779524A (zh) 2010-07-14
JP2010536142A (ja) 2010-11-25
NL1035746A1 (nl) 2009-02-09
TW200912999A (en) 2009-03-16
TWI398900B (zh) 2013-06-11

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