JP2010536142A - リソグラフィ装置およびデバイス製造方法 - Google Patents

リソグラフィ装置およびデバイス製造方法 Download PDF

Info

Publication number
JP2010536142A
JP2010536142A JP2010519881A JP2010519881A JP2010536142A JP 2010536142 A JP2010536142 A JP 2010536142A JP 2010519881 A JP2010519881 A JP 2010519881A JP 2010519881 A JP2010519881 A JP 2010519881A JP 2010536142 A JP2010536142 A JP 2010536142A
Authority
JP
Japan
Prior art keywords
radiation
plasma
fuel
substance
radiation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010519881A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010536142A5 (enExample
Inventor
イヴァノヴ，ブラディミア，ヴィタレヴィッチ
バニエ，バディム，エヴィジェンエビッチ
コシェレヴ，コンスタンティン，ニコラエヴィッチ
クリヴツン，ヴラディミア，ミハイロヴィッチ
Original Assignee
エーエスエムエル ネザーランズ ビー．ブイ．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エーエスエムエル ネザーランズ ビー．ブイ． filed Critical エーエスエムエル ネザーランズ ビー．ブイ．
Publication of JP2010536142A publication Critical patent/JP2010536142A/ja
Publication of JP2010536142A5 publication Critical patent/JP2010536142A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/002—Supply of the plasma generating material
    • H05G2/0027—Arrangements for controlling the supply; Arrangements for measurements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2010519881A 2007-08-06 2008-08-05 リソグラフィ装置およびデバイス製造方法 Pending JP2010536142A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/882,853 US8493548B2 (en) 2007-08-06 2007-08-06 Lithographic apparatus and device manufacturing method
PCT/NL2008/050536 WO2009020390A1 (en) 2007-08-06 2008-08-05 Lithographic apparatus and device manufacturing method

Publications (2)

Publication Number Publication Date
JP2010536142A true JP2010536142A (ja) 2010-11-25
JP2010536142A5 JP2010536142A5 (enExample) 2011-09-22

Family

ID=39846624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010519881A Pending JP2010536142A (ja) 2007-08-06 2008-08-05 リソグラフィ装置およびデバイス製造方法

Country Status (8)

Country Link
US (2) US8493548B2 (enExample)
EP (1) EP2186386A1 (enExample)
JP (1) JP2010536142A (enExample)
KR (1) KR101331069B1 (enExample)
CN (1) CN101779524B (enExample)
NL (1) NL1035746A1 (enExample)
TW (1) TWI398900B (enExample)
WO (1) WO2009020390A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170128441A (ko) * 2015-03-11 2017-11-22 케이엘에이-텐코 코포레이션 연속파 레이저 유지 플라즈마 조명원

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7872244B2 (en) * 2007-08-08 2011-01-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP5896910B2 (ja) * 2009-10-29 2016-03-30 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． ガス放電光源用の電極システム
KR102669150B1 (ko) 2016-07-27 2024-05-27 삼성전자주식회사 자외선(uv) 노광 장치를 구비한 극자외선(euv) 노광 시스템
US12437883B1 (en) 2019-03-27 2025-10-07 Consolidated Nuclear Security, LLC Diode assembly for pulsed fusion events
US11437152B1 (en) 2019-06-27 2022-09-06 Consolidated Nuclear Security, LLC Diode assembly and method of forming a diode assembly for pulsed fusion events

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917595A (ja) * 1995-06-28 1997-01-17 Nikon Corp Ｘ線発生装置
JP2004165155A (ja) * 2002-09-19 2004-06-10 Asml Netherlands Bv 放射源、リソグラフィ装置、およびデバイス製造方法
JP2005522839A (ja) * 2002-04-10 2005-07-28 サイマー インコーポレイテッド 極紫外線光源
JP2007087939A (ja) * 2005-08-30 2007-04-05 Xtreme Technologies Gmbh 気体放電に基づく高い放射線出力を備える極紫外放射線源

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3586244T2 (de) * 1984-12-26 2000-04-20 Kabushiki Kaisha Toshiba Vorrichtung zur Erzeugung von Weich-Röntgenstrahlen durch ein Hochenergiebündel.
US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
WO1991017483A1 (de) 1990-05-02 1991-11-14 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Belichtungsvorrichtung
SE502094C2 (sv) * 1991-08-16 1995-08-14 Sandvik Ab Metod för diamantbeläggning med mikrovågsplasma
DE69711929T2 (de) 1997-01-29 2002-09-05 Micronic Laser Systems Ab, Taeby Verfahren und gerät zur erzeugung eines musters auf einem mit fotoresist beschichteten substrat mittels fokusiertem laserstrahl
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US6232613B1 (en) 1997-03-11 2001-05-15 University Of Central Florida Debris blocker/collector and emission enhancer for discharge sources
US6815700B2 (en) * 1997-05-12 2004-11-09 Cymer, Inc. Plasma focus light source with improved pulse power system
US7329886B2 (en) * 1998-05-05 2008-02-12 Carl Zeiss Smt Ag EUV illumination system having a plurality of light sources for illuminating an optical element
TWI246872B (en) * 1999-12-17 2006-01-01 Asml Netherlands Bv Radiation source for use in lithographic projection apparatus
DE10139677A1 (de) * 2001-04-06 2002-10-17 Fraunhofer Ges Forschung Verfahren und Vorrichtung zum Erzeugen von extrem ultravioletter Strahlung und weicher Röntgenstrahlung
KR100408405B1 (ko) * 2001-05-03 2003-12-06 삼성전자주식회사 반도체 소자의 제조 장치
US7372056B2 (en) * 2005-06-29 2008-05-13 Cymer, Inc. LPP EUV plasma source material target delivery system
DE10219173A1 (de) * 2002-04-30 2003-11-20 Philips Intellectual Property Verfahren zur Erzeugung von Extrem-Ultraviolett-Strahlung
SG129259A1 (en) * 2002-10-03 2007-02-26 Asml Netherlands Bv Radiation source lithographic apparatus, and device manufacturing method
DE10256663B3 (de) * 2002-12-04 2005-10-13 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gasentladungslampe für EUV-Strahlung
DE10310623B8 (de) * 2003-03-10 2005-12-01 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen eines Plasmas durch elektrische Entladung in einem Entladungsraum
DE10342239B4 (de) * 2003-09-11 2018-06-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Erzeugen von Extrem-Ultraviolettstrahlung oder weicher Röntgenstrahlung
US20070019789A1 (en) * 2004-03-29 2007-01-25 Jmar Research, Inc. Systems and methods for achieving a required spot says for nanoscale surface analysis using soft x-rays
JP4337648B2 (ja) * 2004-06-24 2009-09-30 株式会社ニコン Ｅｕｖ光源、ｅｕｖ露光装置、及び半導体デバイスの製造方法
JP4301094B2 (ja) * 2004-06-25 2009-07-22 トヨタ自動車株式会社 燃料又は還元剤添加装置及び方法、並びにプラズマトーチ
DE102004042501A1 (de) * 2004-08-31 2006-03-16 Xtreme Technologies Gmbh Vorrichtung zur Bereitstellung eines reproduzierbaren Targetstromes für die energiestrahlinduzierte Erzeugung kurzwelliger elektromagnetischer Strahlung
US7154109B2 (en) * 2004-09-30 2006-12-26 Intel Corporation Method and apparatus for producing electromagnetic radiation
US7462851B2 (en) * 2005-09-23 2008-12-09 Asml Netherlands B.V. Electromagnetic radiation source, lithographic apparatus, device manufacturing method and device manufactured thereby
US7332731B2 (en) * 2005-12-06 2008-02-19 Asml Netherlands, B.V. Radiation system and lithographic apparatus
US7705331B1 (en) * 2006-06-29 2010-04-27 Kla-Tencor Technologies Corp. Methods and systems for providing illumination of a specimen for a process performed on the specimen
TW200808134A (en) * 2006-07-28 2008-02-01 Ushio Electric Inc Light source device for producing extreme ultraviolet radiation and method of generating extreme ultraviolet radiation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0917595A (ja) * 1995-06-28 1997-01-17 Nikon Corp Ｘ線発生装置
JP2005522839A (ja) * 2002-04-10 2005-07-28 サイマー インコーポレイテッド 極紫外線光源
JP2004165155A (ja) * 2002-09-19 2004-06-10 Asml Netherlands Bv 放射源、リソグラフィ装置、およびデバイス製造方法
JP2007087939A (ja) * 2005-08-30 2007-04-05 Xtreme Technologies Gmbh 気体放電に基づく高い放射線出力を備える極紫外放射線源

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170128441A (ko) * 2015-03-11 2017-11-22 케이엘에이-텐코 코포레이션 연속파 레이저 유지 플라즈마 조명원
JP2018515875A (ja) * 2015-03-11 2018-06-14 ケーエルエー−テンカー コーポレイション 連続波レーザ維持プラズマ光源
JP2020198306A (ja) * 2015-03-11 2020-12-10 ケーエルエー コーポレイション 光維持プラズマ形成によって広帯域光を生成する光学システム
KR20230035469A (ko) * 2015-03-11 2023-03-13 케이엘에이 코포레이션 연속파 레이저 유지 플라즈마 조명원
KR102539898B1 (ko) * 2015-03-11 2023-06-02 케이엘에이 코포레이션 연속파 레이저 유지 플라즈마 조명원
KR102600360B1 (ko) * 2015-03-11 2023-11-08 케이엘에이 코포레이션 연속파 레이저 유지 플라즈마 조명원

Also Published As

Publication number Publication date
US20130287968A1 (en) 2013-10-31
WO2009020390A1 (en) 2009-02-12
KR20100029849A (ko) 2010-03-17
US20090040491A1 (en) 2009-02-12
US8493548B2 (en) 2013-07-23
EP2186386A1 (en) 2010-05-19
CN101779524B (zh) 2012-12-05
KR101331069B1 (ko) 2013-11-19
CN101779524A (zh) 2010-07-14
NL1035746A1 (nl) 2009-02-09
TW200912999A (en) 2009-03-16
TWI398900B (zh) 2013-06-11

Similar Documents

Publication Publication Date Title
JP5955423B2 (ja) デブリ粒子を抑制するための放射線源装置、リソグラフィ装置、照明システム、および方法
JP5878120B2 (ja) Ｅｕｖ放射システムおよびリソグラフィ装置
KR101652361B1 (ko) 방사선 소스, 리소그래피 장치 및 디바이스 제조방법
TWI414213B (zh) 輻射源，微影裝置及器件製造方法
TW201109854A (en) Lithographic apparatus and device manufacturing method
TWI586222B (zh) 輻射源、雷射系統、微影裝置及產生雷射光束之方法
US20130287968A1 (en) Lithographic apparatus and device manufacturing method
TWI452440B (zh) 多層鏡及微影裝置
US7145631B2 (en) Lithographic apparatus, illumination system and method for mitigating debris particles
US20110020752A1 (en) Extreme ultraviolet radiation source and method for producing extreme ultraviolet radiation
JP2010045355A (ja) 放射源、リソグラフィ装置、および、デバイス製造方法
JP4384082B2 (ja) かすめ入射ミラー、かすめ入射ミラーを含むリソグラフィ装置、かすめ入射ミラーを提供する方法、かすめ入射ミラーのｅｕｖ反射を強化する方法、デバイス製造方法およびそれによって製造したデバイス
US7872244B2 (en) Lithographic apparatus and device manufacturing method

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110804

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110804

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130304

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140303

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20141002