JP2010532570A5 - - Google Patents
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- Publication number
- JP2010532570A5 JP2010532570A5 JP2010514829A JP2010514829A JP2010532570A5 JP 2010532570 A5 JP2010532570 A5 JP 2010532570A5 JP 2010514829 A JP2010514829 A JP 2010514829A JP 2010514829 A JP2010514829 A JP 2010514829A JP 2010532570 A5 JP2010532570 A5 JP 2010532570A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- thin film
- providing
- capsule
- support element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 claims 30
- 238000000034 method Methods 0.000 claims 26
- 239000010409 thin film Substances 0.000 claims 20
- 239000002775 capsule Substances 0.000 claims 14
- 238000010438 heat treatment Methods 0.000 claims 8
- 239000002245 particle Substances 0.000 claims 8
- 238000001816 cooling Methods 0.000 claims 7
- 238000001953 recrystallisation Methods 0.000 claims 4
- 239000000463 material Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000011109 contamination Methods 0.000 claims 1
- 238000001035 drying Methods 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000006911 nucleation Effects 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US93712907P | 2007-06-26 | 2007-06-26 | |
| US60/937,129 | 2007-06-26 | ||
| PCT/US2008/008030 WO2009002550A1 (en) | 2007-06-26 | 2008-06-26 | Recrystallization of semiconductor wafers in a thin film capsule and related processes |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010532570A JP2010532570A (ja) | 2010-10-07 |
| JP2010532570A5 true JP2010532570A5 (enExample) | 2011-08-11 |
| JP5591695B2 JP5591695B2 (ja) | 2014-09-17 |
Family
ID=40185969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010514829A Expired - Fee Related JP5591695B2 (ja) | 2007-06-26 | 2008-06-26 | 薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US8633483B2 (enExample) |
| EP (1) | EP2168145A4 (enExample) |
| JP (1) | JP5591695B2 (enExample) |
| KR (1) | KR101527139B1 (enExample) |
| CN (1) | CN101790774B (enExample) |
| WO (1) | WO2009002550A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201000691A (en) | 2008-02-29 | 2010-01-01 | Corning Inc | Methods of making an unsupported article of pure or doped semiconducting material |
| US7771643B1 (en) | 2009-02-27 | 2010-08-10 | Corning Incorporated | Methods of making an unsupported article of semiconducting material by controlled undercooling |
| ES2680648T3 (es) | 2009-03-09 | 2018-09-10 | 1366 Technologies Inc. | Procedimientos de fabricación de cuerpos semiconductores delgados a partir de material fundido |
| US8540920B2 (en) | 2009-05-14 | 2013-09-24 | Corning Incorporated | Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material |
| FR2948492B1 (fr) * | 2009-07-24 | 2012-03-09 | Tile S | Recristallisation complete de plaquettes semiconductrices |
| US8480803B2 (en) | 2009-10-30 | 2013-07-09 | Corning Incorporated | Method of making an article of semiconducting material |
| US8591795B2 (en) * | 2009-12-04 | 2013-11-26 | Corning Incorporated | Method of exocasting an article of semiconducting material |
| US8242033B2 (en) | 2009-12-08 | 2012-08-14 | Corning Incorporated | High throughput recrystallization of semiconducting materials |
| CN103119207B (zh) * | 2010-09-23 | 2017-08-18 | 康宁股份有限公司 | 改良半导体材料微结构的技术 |
| US9419167B2 (en) * | 2010-12-01 | 2016-08-16 | 1366 Technologies, Inc. | Making semiconductor bodies from molten material using a free-standing interposer sheet |
| US9879357B2 (en) * | 2013-03-11 | 2018-01-30 | Tivra Corporation | Methods and systems for thin film deposition processes |
| JP5975785B2 (ja) * | 2012-08-14 | 2016-08-23 | 株式会社アドテックエンジニアリング | 描画装置、露光描画装置、プログラム及び描画方法 |
| CN104047052B (zh) * | 2013-03-11 | 2018-10-19 | 三菱综合材料株式会社 | 半导体装置用硅部件及半导体装置用硅部件的制造方法 |
| AU2016336428A1 (en) | 2015-10-09 | 2018-05-24 | Milwaukee Silicon, Llc | Devices and systems for purifying silicon |
| CN114195519A (zh) * | 2020-09-17 | 2022-03-18 | 山东硅纳新材料科技有限公司 | 一种先驱体转化碳化硅陶瓷及其制备方法 |
| CN112831185B (zh) * | 2021-02-23 | 2022-09-20 | 中北大学 | 梯度导电-均匀导热双功能网络低反射高吸收电磁屏蔽聚合物复合材料 |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1193308A (en) | 1916-08-01 | Pipe-wbeirch | ||
| DE2659397A1 (de) * | 1975-12-31 | 1977-07-14 | Motorola Inc | Verfahren zum modifizieren einer kristallstruktur eines halbleitermaterials |
| DE2659436A1 (de) | 1975-12-31 | 1977-07-07 | Motorola Inc | Verfahren zum modifizieren einer kristallstruktur einer halbleiterschicht |
| US4196041A (en) | 1976-02-09 | 1980-04-01 | Motorola, Inc. | Self-seeding conversion of polycrystalline silicon sheets to macrocrystalline by zone melting |
| US4315479A (en) | 1980-06-27 | 1982-02-16 | Atomel Corporation | Silicon wafer steam oxidizing apparatus |
| US4461670A (en) * | 1982-05-03 | 1984-07-24 | At&T Bell Laboratories | Process for producing silicon devices |
| US4590130A (en) * | 1984-03-26 | 1986-05-20 | General Electric Company | Solid state zone recrystallization of semiconductor material on an insulator |
| JPS6177513A (ja) | 1984-09-26 | 1986-04-21 | Hitachi Ltd | 車両用空調装置の給気ダクト |
| US4602980A (en) | 1984-10-01 | 1986-07-29 | Solavolt International | Method for improving crystallinity of semiconductor ribbon |
| JPS6175513A (ja) * | 1985-07-01 | 1986-04-17 | Hitachi Ltd | シリコン結晶膜の製造方法 |
| JPS6233418A (ja) | 1985-08-07 | 1987-02-13 | Mitsubishi Electric Corp | 帯域溶融型単結晶半導体層形成装置 |
| US5173271A (en) * | 1985-12-04 | 1992-12-22 | Massachusetts Institute Of Technology | Enhanced radiative zone-melting recrystallization method and apparatus |
| JPS62285412A (ja) | 1986-06-04 | 1987-12-11 | Hitachi Ltd | 半導体基板の製造方法 |
| JPS6325209A (ja) | 1986-07-18 | 1988-02-02 | Kawasaki Steel Corp | 多結晶シリコンウエハの製造方法 |
| DE3813737A1 (de) | 1988-04-23 | 1989-11-02 | Fraunhofer Ges Forschung | Verfahren zum herstellen von solarzellen sowie spiegelofen zur durchfuehrung des verfahrens |
| US4944835A (en) | 1989-03-30 | 1990-07-31 | Kopin Corporation | Seeding process in zone recrystallization |
| JPH06103732B2 (ja) | 1990-05-30 | 1994-12-14 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
| JP2557137B2 (ja) * | 1990-08-13 | 1996-11-27 | 三菱電機株式会社 | 半導体製造用加熱装置 |
| JPH04253323A (ja) | 1991-01-29 | 1992-09-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| US5248349A (en) * | 1992-05-12 | 1993-09-28 | Solar Cells, Inc. | Process for making photovoltaic devices and resultant product |
| JPH06325209A (ja) * | 1993-05-14 | 1994-11-25 | Kawasaki Steel Corp | 文字読取装置 |
| US6326248B1 (en) | 1994-06-02 | 2001-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Process for fabricating semiconductor device |
| JP3453436B2 (ja) * | 1994-09-08 | 2003-10-06 | 三菱電機株式会社 | 半導体層を溶融再結晶化するための装置 |
| KR970013008A (ko) | 1995-08-30 | 1997-03-29 | 윤덕용 | Soi소자 제조장치 및 그를 이용한 soi소자의 제조방법 |
| US6111191A (en) * | 1997-03-04 | 2000-08-29 | Astropower, Inc. | Columnar-grained polycrystalline solar cell substrate and improved method of manufacture |
| JPH11260721A (ja) | 1998-03-13 | 1999-09-24 | Toshiba Corp | 多結晶薄膜シリコン層の形成方法および太陽光発電素子 |
| JP2000100675A (ja) * | 1998-09-25 | 2000-04-07 | Toshiba Corp | ダミーウェハー |
| JP3551909B2 (ja) * | 1999-11-18 | 2004-08-11 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
| DE60032358T2 (de) | 2000-02-15 | 2007-10-25 | Toshiba Ceramics Co., Ltd. | Verfahren zur herstellung von si-sic-gliedern zur thermischen behandlung von halbleitern |
| DE10039596C2 (de) | 2000-08-12 | 2003-03-27 | Omg Ag & Co Kg | Geträgerte Metallmembran, Verfahren zu ihrer Herstellung und Verwendung |
| CA2335260A1 (en) * | 2001-02-12 | 2002-08-12 | Sabin Boily | Method of forming single crystals of a ceramic, semiconductive or magnetic material |
| KR20030085523A (ko) | 2001-03-19 | 2003-11-05 | 신에쯔 한도타이 가부시키가이샤 | 태양전지 및 그 제조방법 |
| US7253032B2 (en) * | 2001-04-20 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Method of flattening a crystallized semiconductor film surface by using a plate |
| JP2003086604A (ja) * | 2001-09-10 | 2003-03-20 | Advanced Lcd Technologies Development Center Co Ltd | 薄膜半導体装置及びその基板ならびにその製造方法 |
| US6660930B1 (en) | 2002-06-12 | 2003-12-09 | Rwe Schott Solar, Inc. | Solar cell modules with improved backskin |
| AU2003256825A1 (en) * | 2002-07-31 | 2004-02-16 | Astropower, Inc. | Method and apparatus for manufacturing net shape semiconductor wafers |
| US7135728B2 (en) | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
| US7586171B2 (en) | 2004-04-14 | 2009-09-08 | Yong Cao | Organic electronic device comprising conductive members and processes for forming and using the organic electronic device |
| US20060003548A1 (en) | 2004-06-30 | 2006-01-05 | Kobrinsky Mauro J | Highly compliant plate for wafer bonding |
| FR2948492B1 (fr) * | 2009-07-24 | 2012-03-09 | Tile S | Recristallisation complete de plaquettes semiconductrices |
-
2008
- 2008-06-26 CN CN2008801047629A patent/CN101790774B/zh not_active Expired - Fee Related
- 2008-06-26 KR KR1020097026653A patent/KR101527139B1/ko not_active Expired - Fee Related
- 2008-06-26 US US12/665,495 patent/US8633483B2/en active Active
- 2008-06-26 JP JP2010514829A patent/JP5591695B2/ja not_active Expired - Fee Related
- 2008-06-26 EP EP08779827A patent/EP2168145A4/en not_active Withdrawn
- 2008-06-26 WO PCT/US2008/008030 patent/WO2009002550A1/en not_active Ceased
-
2014
- 2014-01-15 US US14/155,546 patent/US9932689B2/en not_active Expired - Fee Related
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