CN101790774B - 半导体晶圆在薄膜包衣中的重结晶以及有关工艺 - Google Patents

半导体晶圆在薄膜包衣中的重结晶以及有关工艺 Download PDF

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Publication number
CN101790774B
CN101790774B CN2008801047629A CN200880104762A CN101790774B CN 101790774 B CN101790774 B CN 101790774B CN 2008801047629 A CN2008801047629 A CN 2008801047629A CN 200880104762 A CN200880104762 A CN 200880104762A CN 101790774 B CN101790774 B CN 101790774B
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wafer
film
recrystallization
heating
original
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CN101790774A (zh
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E·M·萨赫斯
J·G·塞尔迪
E·T·汉特苏
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Massachusetts Institute of Technology
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/02—Production of homogeneous polycrystalline material with defined structure directly from the solid state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
CN2008801047629A 2007-06-26 2008-06-26 半导体晶圆在薄膜包衣中的重结晶以及有关工艺 Expired - Fee Related CN101790774B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US93712907P 2007-06-26 2007-06-26
US60/937129 2007-06-26
PCT/US2008/008030 WO2009002550A1 (en) 2007-06-26 2008-06-26 Recrystallization of semiconductor wafers in a thin film capsule and related processes

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CN101790774A CN101790774A (zh) 2010-07-28
CN101790774B true CN101790774B (zh) 2012-05-02

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US (2) US8633483B2 (enExample)
EP (1) EP2168145A4 (enExample)
JP (1) JP5591695B2 (enExample)
KR (1) KR101527139B1 (enExample)
CN (1) CN101790774B (enExample)
WO (1) WO2009002550A1 (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201000691A (en) 2008-02-29 2010-01-01 Corning Inc Methods of making an unsupported article of pure or doped semiconducting material
US7771643B1 (en) 2009-02-27 2010-08-10 Corning Incorporated Methods of making an unsupported article of semiconducting material by controlled undercooling
ES2680648T3 (es) 2009-03-09 2018-09-10 1366 Technologies Inc. Procedimientos de fabricación de cuerpos semiconductores delgados a partir de material fundido
US8540920B2 (en) 2009-05-14 2013-09-24 Corning Incorporated Methods of making an article of semiconducting material on a mold comprising particles of a semiconducting material
FR2948492B1 (fr) * 2009-07-24 2012-03-09 Tile S Recristallisation complete de plaquettes semiconductrices
US8480803B2 (en) 2009-10-30 2013-07-09 Corning Incorporated Method of making an article of semiconducting material
US8591795B2 (en) * 2009-12-04 2013-11-26 Corning Incorporated Method of exocasting an article of semiconducting material
US8242033B2 (en) 2009-12-08 2012-08-14 Corning Incorporated High throughput recrystallization of semiconducting materials
CN103119207B (zh) * 2010-09-23 2017-08-18 康宁股份有限公司 改良半导体材料微结构的技术
US9419167B2 (en) * 2010-12-01 2016-08-16 1366 Technologies, Inc. Making semiconductor bodies from molten material using a free-standing interposer sheet
US9879357B2 (en) * 2013-03-11 2018-01-30 Tivra Corporation Methods and systems for thin film deposition processes
JP5975785B2 (ja) * 2012-08-14 2016-08-23 株式会社アドテックエンジニアリング 描画装置、露光描画装置、プログラム及び描画方法
CN104047052B (zh) * 2013-03-11 2018-10-19 三菱综合材料株式会社 半导体装置用硅部件及半导体装置用硅部件的制造方法
AU2016336428A1 (en) 2015-10-09 2018-05-24 Milwaukee Silicon, Llc Devices and systems for purifying silicon
CN114195519A (zh) * 2020-09-17 2022-03-18 山东硅纳新材料科技有限公司 一种先驱体转化碳化硅陶瓷及其制备方法
CN112831185B (zh) * 2021-02-23 2022-09-20 中北大学 梯度导电-均匀导热双功能网络低反射高吸收电磁屏蔽聚合物复合材料

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315479A (en) * 1980-06-27 1982-02-16 Atomel Corporation Silicon wafer steam oxidizing apparatus
US4461670A (en) * 1982-05-03 1984-07-24 At&T Bell Laboratories Process for producing silicon devices
JPH0434961A (ja) 1990-05-30 1992-02-05 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5470397A (en) * 1992-05-12 1995-11-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
US5741359A (en) * 1994-09-08 1998-04-21 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for zone-melting recrystallization of semiconductor layer
US6482704B1 (en) * 1999-11-18 2002-11-19 Denso Corporation Method of manufacturing silicon carbide semiconductor device having oxide film formed thereon with low on-resistances
US6589824B2 (en) * 1994-06-02 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US20050121111A1 (en) * 2001-09-10 2005-06-09 Yasuhisa Oana Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1193308A (en) 1916-08-01 Pipe-wbeirch
DE2659397A1 (de) * 1975-12-31 1977-07-14 Motorola Inc Verfahren zum modifizieren einer kristallstruktur eines halbleitermaterials
DE2659436A1 (de) 1975-12-31 1977-07-07 Motorola Inc Verfahren zum modifizieren einer kristallstruktur einer halbleiterschicht
US4196041A (en) 1976-02-09 1980-04-01 Motorola, Inc. Self-seeding conversion of polycrystalline silicon sheets to macrocrystalline by zone melting
US4590130A (en) * 1984-03-26 1986-05-20 General Electric Company Solid state zone recrystallization of semiconductor material on an insulator
JPS6177513A (ja) 1984-09-26 1986-04-21 Hitachi Ltd 車両用空調装置の給気ダクト
US4602980A (en) 1984-10-01 1986-07-29 Solavolt International Method for improving crystallinity of semiconductor ribbon
JPS6175513A (ja) * 1985-07-01 1986-04-17 Hitachi Ltd シリコン結晶膜の製造方法
JPS6233418A (ja) 1985-08-07 1987-02-13 Mitsubishi Electric Corp 帯域溶融型単結晶半導体層形成装置
US5173271A (en) * 1985-12-04 1992-12-22 Massachusetts Institute Of Technology Enhanced radiative zone-melting recrystallization method and apparatus
JPS62285412A (ja) 1986-06-04 1987-12-11 Hitachi Ltd 半導体基板の製造方法
JPS6325209A (ja) 1986-07-18 1988-02-02 Kawasaki Steel Corp 多結晶シリコンウエハの製造方法
DE3813737A1 (de) 1988-04-23 1989-11-02 Fraunhofer Ges Forschung Verfahren zum herstellen von solarzellen sowie spiegelofen zur durchfuehrung des verfahrens
US4944835A (en) 1989-03-30 1990-07-31 Kopin Corporation Seeding process in zone recrystallization
JP2557137B2 (ja) * 1990-08-13 1996-11-27 三菱電機株式会社 半導体製造用加熱装置
JPH04253323A (ja) 1991-01-29 1992-09-09 Mitsubishi Electric Corp 半導体装置の製造方法
JPH06325209A (ja) * 1993-05-14 1994-11-25 Kawasaki Steel Corp 文字読取装置
KR970013008A (ko) 1995-08-30 1997-03-29 윤덕용 Soi소자 제조장치 및 그를 이용한 soi소자의 제조방법
US6111191A (en) * 1997-03-04 2000-08-29 Astropower, Inc. Columnar-grained polycrystalline solar cell substrate and improved method of manufacture
JPH11260721A (ja) 1998-03-13 1999-09-24 Toshiba Corp 多結晶薄膜シリコン層の形成方法および太陽光発電素子
JP2000100675A (ja) * 1998-09-25 2000-04-07 Toshiba Corp ダミーウェハー
DE60032358T2 (de) 2000-02-15 2007-10-25 Toshiba Ceramics Co., Ltd. Verfahren zur herstellung von si-sic-gliedern zur thermischen behandlung von halbleitern
DE10039596C2 (de) 2000-08-12 2003-03-27 Omg Ag & Co Kg Geträgerte Metallmembran, Verfahren zu ihrer Herstellung und Verwendung
CA2335260A1 (en) * 2001-02-12 2002-08-12 Sabin Boily Method of forming single crystals of a ceramic, semiconductive or magnetic material
KR20030085523A (ko) 2001-03-19 2003-11-05 신에쯔 한도타이 가부시키가이샤 태양전지 및 그 제조방법
US7253032B2 (en) * 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
US6660930B1 (en) 2002-06-12 2003-12-09 Rwe Schott Solar, Inc. Solar cell modules with improved backskin
AU2003256825A1 (en) * 2002-07-31 2004-02-16 Astropower, Inc. Method and apparatus for manufacturing net shape semiconductor wafers
US7135728B2 (en) 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7586171B2 (en) 2004-04-14 2009-09-08 Yong Cao Organic electronic device comprising conductive members and processes for forming and using the organic electronic device
US20060003548A1 (en) 2004-06-30 2006-01-05 Kobrinsky Mauro J Highly compliant plate for wafer bonding
FR2948492B1 (fr) * 2009-07-24 2012-03-09 Tile S Recristallisation complete de plaquettes semiconductrices

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4315479A (en) * 1980-06-27 1982-02-16 Atomel Corporation Silicon wafer steam oxidizing apparatus
US4461670A (en) * 1982-05-03 1984-07-24 At&T Bell Laboratories Process for producing silicon devices
JPH0434961A (ja) 1990-05-30 1992-02-05 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5470397A (en) * 1992-05-12 1995-11-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
US6589824B2 (en) * 1994-06-02 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
US5741359A (en) * 1994-09-08 1998-04-21 Mitsubishi Denki Kabushiki Kaisha Method and apparatus for zone-melting recrystallization of semiconductor layer
US6482704B1 (en) * 1999-11-18 2002-11-19 Denso Corporation Method of manufacturing silicon carbide semiconductor device having oxide film formed thereon with low on-resistances
US20050121111A1 (en) * 2001-09-10 2005-06-09 Yasuhisa Oana Thin film semiconductor device having a gate electrode insulator formed through high-heat oxidization

Also Published As

Publication number Publication date
CN101790774A (zh) 2010-07-28
US9932689B2 (en) 2018-04-03
JP5591695B2 (ja) 2014-09-17
KR101527139B1 (ko) 2015-06-08
US8633483B2 (en) 2014-01-21
EP2168145A1 (en) 2010-03-31
US20140124963A1 (en) 2014-05-08
US20100295061A1 (en) 2010-11-25
JP2010532570A (ja) 2010-10-07
KR20100038306A (ko) 2010-04-14
HK1146765A1 (en) 2011-07-08
EP2168145A4 (en) 2011-06-29
WO2009002550A1 (en) 2008-12-31

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