JP2010529646A5 - - Google Patents

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Publication number
JP2010529646A5
JP2010529646A5 JP2010510279A JP2010510279A JP2010529646A5 JP 2010529646 A5 JP2010529646 A5 JP 2010529646A5 JP 2010510279 A JP2010510279 A JP 2010510279A JP 2010510279 A JP2010510279 A JP 2010510279A JP 2010529646 A5 JP2010529646 A5 JP 2010529646A5
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JP
Japan
Prior art keywords
silicon carbide
type silicon
epitaxial layer
layer
substrate
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JP2010510279A
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English (en)
Japanese (ja)
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JP2010529646A (ja
JP5847398B2 (ja
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Priority claimed from US11/756,020 external-priority patent/US8866150B2/en
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JP2010510279A 2007-05-31 2008-03-31 ｎ型炭化ケイ素基板を少なくとも部分的に除去することによって炭化ケイ素パワーデバイスを作製する方法、およびそのように作製された炭化ケイ素パワーデバイス Active JP5847398B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/756,020 2007-05-31
US11/756,020 US8866150B2 (en) 2007-05-31 2007-05-31 Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts
PCT/US2008/004239 WO2008156516A2 (en) 2007-05-31 2008-03-31 Methods of fabricating silicon carbide power devices by at least partially removing an n-type silicon carbide substrate, and silicon carbide power devices so fabricated

Publications (3)

Publication Number Publication Date
JP2010529646A JP2010529646A (ja) 2010-08-26
JP2010529646A5 true JP2010529646A5 (enExample) 2012-03-01
JP5847398B2 JP5847398B2 (ja) 2016-01-20

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JP2010510279A Active JP5847398B2 (ja) 2007-05-31 2008-03-31 ｎ型炭化ケイ素基板を少なくとも部分的に除去することによって炭化ケイ素パワーデバイスを作製する方法、およびそのように作製された炭化ケイ素パワーデバイス

Country Status (4)

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US (1) US8866150B2 (enExample)
EP (1) EP2149154B1 (enExample)
JP (1) JP5847398B2 (enExample)
WO (1) WO2008156516A2 (enExample)

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