JP2010522434A - 高電圧GaNベースヘテロ接合トランジスタのための終端およびコンタクト構造 - Google Patents
高電圧GaNベースヘテロ接合トランジスタのための終端およびコンタクト構造 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 21
- 230000006911 nucleation Effects 0.000 claims description 11
- 238000010899 nucleation Methods 0.000 claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 128
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 32
- 229910002601 GaN Inorganic materials 0.000 description 27
- 230000004888 barrier function Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000006557 surface reaction Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- -1 but not limited to Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 208000032750 Device leakage Diseases 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000003877 atomic layer epitaxy Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
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- 150000004678 hydrides Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 150000002830 nitrogen compounds Chemical class 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- NRNCYVBFPDDJNE-UHFFFAOYSA-N pemoline Chemical compound O1C(N)=NC(=O)C1C1=CC=CC=C1 NRNCYVBFPDDJNE-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
【選択図】 図1
Description
本出願は、これと共に同じ日付に出願されて、本願明細書にその全体を引用したものとする、同時継続中の(特許文献1)に関連する。
12 基板
16 終端層
18 核形成層
22 緩衝層
24 ショットキ層
26 チャンネル層
27 ソースコンタクト
28 ゲートコンタクト
30 ドレインコンタクト
302 基板
Claims (20)
- 半導体デバイスであって、
基板と、
前記基板の上に配設される第1の活性層と、
前記第1の活性層上に配設される第2の活性層であって、二次元の電子ガス層が前記第1の活性層と前記第2の活性層との間に生じるように、前記第1の活性層より大きいバンドギャップを有する第2の活性層と、
前記第2の活性層上に配設される終端層であって、InGaNを含む終端層と、
前記終端層上に配設されるソース、ゲートおよびドレインコンタクトと、を備える、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、前記第1の活性層が、III属窒化物半導体材料を備える、ことを特徴とする半導体デバイス。
- 請求項2に記載の半導体デバイスであって、前記第1の活性層がGaNを備える、ことを特徴とする半導体デバイス。
- 請求項1に記載の半導体デバイスであって、前記第2の活性層が、III属窒化物半導体材料を備える、ことを特徴とする半導体デバイス。
- 請求項4に記載の半導体デバイスであって、前記第2の活性層が、AlxGa1−xNを備え、0<X<1である、ことを特徴とする半導体デバイス。
- 請求項4に記載の半導体デバイスであって、前記第2の活性層が、AlGaN、AlInNおよびAlInGaNからなる群から選ばれる、ことを特徴とする半導体デバイス。
- 請求項1に記載の半導体デバイスであって、さらに、前記基板と前記第1の活性層との間に配設される核形成層を備える半導体デバイス。
- 半導体デバイスであって、
基板と、
前記基板の上に配設される第1の活性層と、
前記第1の活性層上に配設される第2の活性層であって、二次元の電子ガス層が前記第1の活性層と前記第2の活性層との間に生じるように、前記第1の活性層より大きいバンドギャップを有する第2の活性層と、
前記第2の活性層上に配設される終端層であって、FeドープされたGaN、SiドープされたGaN、FeNおよびSiNからなる群から選択される終端層と、
前記終端層上に配設されるソース、ゲートおよびドレインコンタクトと、を備える半導体デバイス。 - 請求項8に記載の半導体デバイスであって、前記第1の活性層が、III属窒化物半導体材料を備える、ことを特徴とする半導体デバイス。
- 請求項9に記載の半導体デバイスであって、前記第1の活性層がGaNを備える、ことを特徴とする半導体デバイス。
- 請求項8に記載の半導体デバイスであって、前記第2の活性層が、III属窒化物半導体材料を備える、ことを特徴とする半導体デバイス。
- 請求項11に記載の半導体デバイスであって、前記第2の活性層が、AlxGa1−xNを備え、0<X<1である、ことを特徴とする半導体デバイス。
- 請求項11に記載の半導体デバイスであって、前記第2の活性層が、AlGaN、AlInNおよびAlInGaNからなる群から選ばれる、ことを特徴とする半導体デバイス。
- 請求項8に記載の半導体デバイスであって、さらに、前記基板と前記第1の活性層との間に配設される核形成層を備える半導体デバイス。
- 半導体デバイスであって、
基板と、
前記基板の上に配設される第1の活性層と、
前記第1の活性層上に配設される第2の活性層であって、二次元の電子ガス層が前記第1の活性層と前記第2の活性層との間に生じるように、前記第1の活性層より大きいバンドギャップを有し、前記第2の活性層がその中に形成される第1および第2の凹部を含む、第2の活性層と、
前記第1および第2の凹部内にそれぞれ配設されるソースおよびドレインコンタクトと、
前記第2の活性層の上に配設されるゲート電極と、を備える、ことを特徴とする半導体デバイス。 - 請求項15に記載の半導体デバイスであって、さらに、前記第2の活性層の上に配設される終端層、を備え、そして、前記ソースおよびドレインコンタクトが、前記終端層を通して延伸する、ことを特徴とする半導体デバイス。
- 請求項16に記載の半導体デバイスであって、前記終端層が、InGaNを備える、ことを特徴とする半導体デバイス。
- 請求項16に記載の半導体デバイスであって、前記終端層が、FeドープされたGaN、SiドープされたGaN、FeNおよびSiNからなる群から選択される、ことを特徴とする半導体デバイス。
- 請求項15に記載の半導体デバイスであって、前記第1の活性層が、III属窒化物半導体材料を備える、ことを特徴とする半導体デバイス。
- 請求項19に記載の半導体デバイスであって、前記第1の活性層がGaNを備える、ことを特徴とする半導体デバイス。
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Application Number | Priority Date | Filing Date | Title |
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US11/725,823 US7939853B2 (en) | 2007-03-20 | 2007-03-20 | Termination and contact structures for a high voltage GaN-based heterojunction transistor |
PCT/US2008/057602 WO2008116040A1 (en) | 2007-03-20 | 2008-03-20 | Termination and contact structures for a high voltage gan-based heterojunction transistor |
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JP2010522434A true JP2010522434A (ja) | 2010-07-01 |
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JP2009554728A Pending JP2010522434A (ja) | 2007-03-20 | 2008-03-20 | 高電圧GaNベースヘテロ接合トランジスタのための終端およびコンタクト構造 |
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EP (2) | EP2140493A4 (ja) |
JP (1) | JP2010522434A (ja) |
KR (1) | KR20090128506A (ja) |
CN (2) | CN103094336A (ja) |
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CN101689561B (zh) | 2013-01-02 |
HK1142995A1 (en) | 2010-12-17 |
WO2008116040A9 (en) | 2009-10-22 |
US7939853B2 (en) | 2011-05-10 |
CN101689561A (zh) | 2010-03-31 |
KR20090128506A (ko) | 2009-12-15 |
EP2450955A2 (en) | 2012-05-09 |
US20080230785A1 (en) | 2008-09-25 |
WO2008116040A1 (en) | 2008-09-25 |
US20110215339A1 (en) | 2011-09-08 |
EP2140493A4 (en) | 2011-06-22 |
CN103094336A (zh) | 2013-05-08 |
US20120238063A1 (en) | 2012-09-20 |
US8169003B2 (en) | 2012-05-01 |
EP2450955A3 (en) | 2012-05-23 |
EP2140493A1 (en) | 2010-01-06 |
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