JP2006165207A - 化合物半導体装置およびその製造方法 - Google Patents
化合物半導体装置およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 150000001875 compounds Chemical class 0.000 title claims description 22
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 115
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 30
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 24
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 24
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 21
- 229910052763 palladium Inorganic materials 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 abstract description 51
- 230000008018 melting Effects 0.000 abstract description 11
- 238000002844 melting Methods 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 6
- 239000002184 metal Substances 0.000 abstract description 6
- 238000003475 lamination Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 112
- 239000010408 film Substances 0.000 description 60
- 239000011241 protective layer Substances 0.000 description 36
- 239000007789 gas Substances 0.000 description 15
- 239000012298 atmosphere Substances 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000012528 membrane Substances 0.000 description 6
- 230000005533 two-dimensional electron gas Effects 0.000 description 6
- 229910004490 TaAl Inorganic materials 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 4
- 229910010038 TiAl Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229940127573 compound 38 Drugs 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- PIDFDZJZLOTZTM-KHVQSSSXSA-N ombitasvir Chemical compound COC(=O)N[C@@H](C(C)C)C(=O)N1CCC[C@H]1C(=O)NC1=CC=C([C@H]2N([C@@H](CC2)C=2C=CC(NC(=O)[C@H]3N(CCC3)C(=O)[C@@H](NC(=O)OC)C(C)C)=CC=2)C=2C=CC(=CC=2)C(C)(C)C)C=C1 PIDFDZJZLOTZTM-KHVQSSSXSA-N 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
【解決手段】GaN系HEMTは、基板と、窒化ガリウム系半導体と、融点が3000℃と高融点金属のタンタルと低融点金属のアルミニウムが前記窒化ガリウム系半導体上に積層されてなる前記ソースおよび前記ドレイン電極を備えている。前記ソース電極および前記ドレイン電極は、前記タンタルと前記アルミニウムの積層膜厚の比(前記アルミニウム膜厚/前記タンタル膜厚)を10以上にし、積層後のアニール処理温度が510℃以上、600℃未満で処理されて成る。
【選択図】 図1
Description
このようにGaAs系電子デバイスより従来のGaN系HEMTの電流オン時の耐圧は向上したが、電流オン時の耐圧は更に50Vまで向上させる必要があるとともに、この様な従来のGaN系HEMTにおいては、高ゲート電圧動作下においてI‐V特性に大きなヒステリシスが発生して、高周波領域における相互コンダクタンスが低下し電流駆動ができなくなるという問題がある。
次いで、全面に、CVD法を用いて表面保護膜としてSiN膜56を堆積したのち、ゲート形成領域に開口部を設けてNi/Auからなるゲート電極57を形成するとともに、オーミック電極となるソース電極58およびドレイン電極59の形成予定領域に開口部を設けてソース電極58及びドレイン電極59を形成する。
このようにして前記ソース電極および前記ドレイン電極と接触する前記GaN保護層との接触抵抗率が小さくなるようにしている。
また、前述の600℃〜800℃のアニール処理によって、Ti/Alから成るソース電極およびドレイン電極の表面とエッジに凹凸が発生する、いわゆるソース電極およびドレイン電極のモフォロジ(表面に表れる形態)が悪化する。そのために電界が不均一に印加されてオーミック性(デバイスの特性)を劣化させてしまう。
更には、前述の600℃〜800℃のアニール処理によるAl層62d,62e、Al層との反応により形成される図13に示すAlGaN保護層63は、アニール処理におけるガス流量、温度等のばらつきによって、膜厚にばらつきが生じてしまう。そのために、ソース電極およびドレイン電極と、GaN保護層55とのオーミック性が左右されてしまう。
熱耐久性を高めるためにTiより融点の高いW(タングステン)とAlを主とする積層電極も開発されている。Wは融点が3220℃と高いが、製造方法が限定され、加工性もTaより容易ではなく量産性には不向きである。また、Ta/Mo(モリブデン)から成る電極も開発されているが、膜厚を厚くすることが難しく、電極の電流密度を低減させることが難しいため大電流動作に不向きである。
本発明は、上記実状に鑑みてなされるもので、ソース電極およびドレイン電極の熱耐久性を向上させて、かつ製造過程においてオーミック性に与える不安定要因を取り除き信頼性および量産性の高いGaN系HEMTを提供することを目的とする。
5、47、57 ゲート電極、
6、26、48、58 ソース電極、
7、27、49、59 ドレイン電極、
16、36 ソース電極(アニール処理後)、
17、37 ドレイン電極(アニール処理後)、
7a Ta層、
7b、7d、7e Al層、
7c TaAl3層、
11 SiC基板、
12、42、52 i型GaN電子走行層、
13、43、53 i型Al0.25Ga0.75N層、
14、44、54 n型Al0.25Ga0.75N電子供給層、
15、55 n型GaN保護層、
19 レジスト、
31 Al層、
32 TaAl3層、
33 Ta層、
34 Pd層、
35 Al層
38 PdAl層、
49a、59a Ti層、
49b Al層、
59b Al層、
62d、62e Al層、
63 AlGaN層、
64 TiAl3層
Claims (5)
- 基板と、前記基板上に形成された窒化ガリウム系半導体と、タンタルとアルミニウムが前記窒化ガリウム系半導体上に任意の順に積層されてなるオーミック電極を備えることを特徴とする化合物半導体装置。
- 基板と、前記基板上に形成された窒化ガリウム系半導体と、タンタルとパラジウムとアルミニウムが前記窒化ガリウム系半導体上に任意の順に積層されてなるオーミック電極を備えることを特徴とする化合物半導体装置。
- 前記オーミック電極に積層する前記タンタルの膜厚に対する前記アルミニウムの膜厚の比が10以上であることを特徴とする請求項1または2に記載の化合物半導体装置。
- 前記窒化ガリウム系半導体上に積層した前記オーミック電極が、510℃以上、600℃未満の温度で熱処理されてなることを特徴とする請求項1乃至3のいずれか1項に記載の化合物半導体装置。
- 基板と、前記基板上に形成された窒化ガリウム系半導体と、タンタルとアルミニウムが前記窒化ガリウム系半導体上に任意の順に積層されてなるオーミック電極を備える化合物半導体装置の製造方法であって、前記基板上に前記窒化ガリウム系半導体を形成する工程と、前記窒化ガリウム系半導体上に前記タンタルと前記アルミニウムを積層する工程と、前記タンタルと前記アルミニウムを510℃以上、600℃未満で熱処理してオーミック電極を形成する工程とを有する化合物半導体装置の製造方法。
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JP2012020288A Division JP5464218B2 (ja) | 2012-02-01 | 2012-02-01 | 窒化ガリウム系hemtの製造方法及び窒化ガリウム系hemt |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008041277A1 (fr) * | 2006-09-29 | 2008-04-10 | Fujitsu Limited | Dispositif à semi-conducteur a base de composé et processus de fabrication correspondant |
EP1975984A2 (en) | 2007-03-30 | 2008-10-01 | Fujitsu Ltd. | Compound semiconductor device including ain layer of controlled skewness |
JP2008306025A (ja) * | 2007-06-08 | 2008-12-18 | Eudyna Devices Inc | 半導体装置の製造方法 |
US7663162B2 (en) | 2007-02-27 | 2010-02-16 | Fujitsu Limited | Compound semiconductor device and doherty amplifier using compound semiconductor device |
JP2010522434A (ja) * | 2007-03-20 | 2010-07-01 | ヴェロックス セミコンダクター コーポレーション | 高電圧GaNベースヘテロ接合トランジスタのための終端およびコンタクト構造 |
JP2011129715A (ja) * | 2009-12-17 | 2011-06-30 | Fujitsu Ltd | 化合物半導体装置の製造方法 |
US8003452B2 (en) | 2008-12-26 | 2011-08-23 | Fujitsu Limited | Compound semiconductor device and manufacturing method thereof |
WO2011108614A1 (ja) | 2010-03-02 | 2011-09-09 | 次世代パワーデバイス技術研究組合 | 半導体トランジスタの製造方法 |
JP2012023213A (ja) * | 2010-07-14 | 2012-02-02 | Sumitomo Electric Device Innovations Inc | 半導体装置の製造方法 |
JP2012028641A (ja) * | 2010-07-26 | 2012-02-09 | Sumitomo Electric Device Innovations Inc | 半導体装置の製造方法 |
US8222672B2 (en) | 2006-03-30 | 2012-07-17 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
JP2013179359A (ja) * | 2008-02-13 | 2013-09-09 | Toshiba Corp | 半導体装置 |
JP2015073034A (ja) * | 2013-10-03 | 2015-04-16 | 富士通株式会社 | 半導体装置の製造方法 |
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Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
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