JP2012023213A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2012023213A JP2012023213A JP2010160119A JP2010160119A JP2012023213A JP 2012023213 A JP2012023213 A JP 2012023213A JP 2010160119 A JP2010160119 A JP 2010160119A JP 2010160119 A JP2010160119 A JP 2010160119A JP 2012023213 A JP2012023213 A JP 2012023213A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 37
- 238000005530 etching Methods 0.000 claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 30
- 238000001020 plasma etching Methods 0.000 claims description 22
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 7
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 5
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 5
- 230000000052 comparative effect Effects 0.000 description 35
- 239000000460 chlorine Substances 0.000 description 24
- 229910002601 GaN Inorganic materials 0.000 description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 229910003902 SiCl 4 Inorganic materials 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
- H01L21/30621—Vapour phase etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】本発明は、Al組成比が0.2以上のAlGaN層をエッチングして、RMS粗さが0.3nm未満の底面を有する凹部を形成する工程と、前記凹部の底面に接して、4nmから8nmの厚さの第1Ta層を形成する工程と、前記第1Ta層に熱処理を施して、前記AlGaN層にオーミック接触させる工程と、を有する半導体装置の製造方法である。
【選択図】図2
Description
12 シード層
14 GaN電子走行層
16 AlGaN電子供給層
18 GaNキャップ層
20 フォトレジスト
22 凹部
24 第1Ta層
26 Al層
28 第2Ta層
30 ソース電極
32 ドレイン電極
34 ゲート電極
36 チャネル層
Claims (7)
- Al組成比が0.2以上のAlGaN層をエッチングして、RMS粗さが0.3nm未満の底面を有する凹部を形成する工程と、
前記凹部の底面に接して、4nmから8nmの厚さの第1Ta層を形成する工程と、
前記第1Ta層に熱処理を施して、前記AlGaN層にオーミック接触させる工程と、を有することを特徴とする半導体装置の製造方法。 - 前記第1Ta層を形成する工程は、5nmから7nmの厚さの前記第1Ta層を形成することを特徴とする請求項1記載の半導体装置の製造方法。
- 前記凹部を形成する工程は、塩化ホウ素ガスと塩素ガスとの混合ガス、塩化ホウ素ガスと塩化珪素ガスと塩素ガスとの混合ガス、塩化珪素ガスと塩素ガスとの混合ガスのうちのいずれかの混合ガスをエッチングガスに用いたプラズマエッチングにより実施することを特徴とする請求項1または2記載の半導体装置の製造方法。
- 前記第1Ta層上に、前記熱処理前にAl層を形成する工程を有することを特徴とする請求項1から3のいずれか一項記載の半導体装置の製造方法。
- 前記Al層上に、前記熱処理前に第2Ta層またはTi層を形成する工程を有することを特徴とする請求項4記載の半導体装置の製造方法。
- 前記凹部を形成する工程は、ICP法を用い0.2Paから4Paの圧力の下、20Wから300Wの高周波電力を印加して前記プラズマエッチングを実施することを特徴とする請求項3記載の半導体装置の製造方法。
- 前記オーミック接触させる工程は、ソース電極およびドレイン電極をオーミック接触させる工程であることを特徴とする請求項1記載の半導体装置の製造方法。
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JP2010160119A JP5714250B2 (ja) | 2010-07-14 | 2010-07-14 | 半導体装置の製造方法 |
US13/182,124 US8896025B2 (en) | 2010-07-14 | 2011-07-13 | Method for fabricating semiconductor device |
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JP2010160119A JP5714250B2 (ja) | 2010-07-14 | 2010-07-14 | 半導体装置の製造方法 |
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JP2012023213A true JP2012023213A (ja) | 2012-02-02 |
JP2012023213A5 JP2012023213A5 (ja) | 2013-08-29 |
JP5714250B2 JP5714250B2 (ja) | 2015-05-07 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9306030B2 (en) | 2013-04-12 | 2016-04-05 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device and method of manufacturing the same |
JP2018125440A (ja) * | 2017-02-01 | 2018-08-09 | 株式会社東芝 | 半導体装置の製造方法 |
WO2019009111A1 (ja) * | 2017-07-07 | 2019-01-10 | パナソニックIpマネジメント株式会社 | 半導体装置およびその製造方法 |
Families Citing this family (7)
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CN103996706A (zh) * | 2014-04-16 | 2014-08-20 | 中国科学院半导体研究所 | 氮化镓基晶体管及其制备方法 |
US10932684B2 (en) * | 2016-03-10 | 2021-03-02 | Epitronic Holdings Pte Ltd. | Microelectronic sensor for air quality monitoring |
US10224285B2 (en) | 2017-02-21 | 2019-03-05 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
US10096550B2 (en) | 2017-02-21 | 2018-10-09 | Raytheon Company | Nitride structure having gold-free contact and methods for forming such structures |
KR101914707B1 (ko) * | 2017-03-20 | 2018-11-05 | 전남대학교산학협력단 | 고성능 저전력 전계효과 트랜지스터 소자 및 이의 제조방법 |
RU2696825C1 (ru) * | 2018-12-14 | 2019-08-06 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" (ТУСУР) | Способ изготовления омического контакта к AlGaN/GaN |
CN114242583B (zh) * | 2021-12-22 | 2023-03-21 | 江苏第三代半导体研究院有限公司 | AlGaN材料的刻蚀方法及其应用 |
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- 2011-07-13 US US13/182,124 patent/US8896025B2/en active Active
Patent Citations (5)
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JP2003124188A (ja) * | 2001-10-10 | 2003-04-25 | Matsushita Electric Ind Co Ltd | GaN系半導体デバイスの製造方法 |
JPWO2005057641A1 (ja) * | 2003-12-08 | 2007-07-05 | 日本電気株式会社 | 電極、その製造方法およびそれを用いた半導体素子 |
JP2006165207A (ja) * | 2004-12-07 | 2006-06-22 | Fujitsu Ltd | 化合物半導体装置およびその製造方法 |
JP2007273844A (ja) * | 2006-03-31 | 2007-10-18 | Matsushita Electric Ind Co Ltd | 半導体素子 |
JP2009194081A (ja) * | 2008-02-13 | 2009-08-27 | New Japan Radio Co Ltd | 窒化物半導体装置の製造方法 |
Cited By (7)
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US9306030B2 (en) | 2013-04-12 | 2016-04-05 | Sumitomo Electric Device Innovations, Inc. | Semiconductor device and method of manufacturing the same |
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JP7002015B2 (ja) | 2017-07-07 | 2022-01-20 | パナソニックIpマネジメント株式会社 | 半導体装置およびその製造方法 |
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