JP2010521817A - 複数のチャネル領域を互いに異なる高さに備える電子デバイス、およびその製造方法 - Google Patents

複数のチャネル領域を互いに異なる高さに備える電子デバイス、およびその製造方法 Download PDF

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JP2010521817A
JP2010521817A JP2009553665A JP2009553665A JP2010521817A JP 2010521817 A JP2010521817 A JP 2010521817A JP 2009553665 A JP2009553665 A JP 2009553665A JP 2009553665 A JP2009553665 A JP 2009553665A JP 2010521817 A JP2010521817 A JP 2010521817A
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gate electrode
forming
layer
control gate
substrate
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JP2009553665A
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Japanese (ja)
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JP2010521817A5 (enExample
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エイ． ラオ、ラジェッシュ
ムラリダール、ラマチャンドラン
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6892—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6893—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode wherein the floating gate has multiple non-connected parts, e.g. multi-particle floating gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/6891—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode
    • H10D30/6894—Floating-gate IGFETs characterised by the shapes, relative sizes or dispositions of the floating gate electrode having one gate at least partly in a trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/697—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having trapping at multiple separated sites, e.g. multi-particles trapping sites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/699—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having the gate at least partly formed in a trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2009553665A 2007-03-13 2008-02-11 複数のチャネル領域を互いに異なる高さに備える電子デバイス、およびその製造方法 Pending JP2010521817A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/685,297 US8803217B2 (en) 2007-03-13 2007-03-13 Process of forming an electronic device including a control gate electrode, a semiconductor layer, and a select gate electrode
PCT/US2008/053569 WO2008112370A1 (en) 2007-03-13 2008-02-11 Electronic device including channel regions lying at different elevations and processes of forming the same

Publications (2)

Publication Number Publication Date
JP2010521817A true JP2010521817A (ja) 2010-06-24
JP2010521817A5 JP2010521817A5 (enExample) 2011-03-31

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JP2009553665A Pending JP2010521817A (ja) 2007-03-13 2008-02-11 複数のチャネル領域を互いに異なる高さに備える電子デバイス、およびその製造方法

Country Status (7)

Country Link
US (1) US8803217B2 (enExample)
EP (1) EP2126977A4 (enExample)
JP (1) JP2010521817A (enExample)
KR (1) KR20090128413A (enExample)
CN (1) CN101647122B (enExample)
TW (1) TWI424571B (enExample)
WO (1) WO2008112370A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016524342A (ja) * 2013-07-05 2016-08-12 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 分割ゲート型不揮発性メモリセル用の自己整合ソースの形成
KR101923773B1 (ko) 2016-07-13 2018-11-29 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스 및 그 제조 방법

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JP2009010104A (ja) * 2007-06-27 2009-01-15 Renesas Technology Corp 半導体装置およびその製造方法
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US20120074485A1 (en) * 2009-12-30 2012-03-29 Hynix Semiconductor Inc. Nonvolatile Memory Device and Manufacturing Method Thereof
JP6297430B2 (ja) * 2014-06-30 2018-03-20 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9356106B2 (en) 2014-09-04 2016-05-31 Freescale Semiconductor, Inc. Method to form self-aligned high density nanocrystals
US9472645B1 (en) 2015-06-08 2016-10-18 Taiwan Semiconductor Manufacturing Co., Ltd. Dual control gate spacer structure for embedded flash memory
US9960176B2 (en) 2015-11-05 2018-05-01 Taiwan Semiconductor Manufacturing Co., Ltd. Nitride-free spacer or oxide spacer for embedded flash memory
US11309324B2 (en) * 2020-07-28 2022-04-19 Globalfoundries Singapore Pte. Ltd. Compact memory cell with a shared conductive word line and methods of making such a memory cell
US11437392B2 (en) * 2020-07-28 2022-09-06 Globalfoundries Singapore Pte. Ltd. Compact memory cell with a shared conductive select gate and methods of making such a memory cell
CN114664836B (zh) * 2022-03-11 2025-11-21 上海华虹宏力半导体制造有限公司 分栅式存储器及其制造方法

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JP2000077632A (ja) * 1998-09-01 2000-03-14 Nec Corp フラッシュメモリ、その書き込み・消去方法、およびその製造方法
WO2003012878A1 (fr) * 2001-07-27 2003-02-13 Renesas Technology Corp. Dispositif semi-conducteur
JP2003218212A (ja) * 2002-01-25 2003-07-31 Hitachi Ltd 半導体装置
US20030218203A1 (en) * 2002-05-21 2003-11-27 Taiwan Semiconductor Manufacturing Company Split gate flash with strong source side injection and method of fabrication thereof

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JPS60246677A (ja) 1984-05-22 1985-12-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
US5780341A (en) * 1996-12-06 1998-07-14 Halo Lsi Design & Device Technology, Inc. Low voltage EEPROM/NVRAM transistors and making method
US5824584A (en) * 1997-06-16 1998-10-20 Motorola, Inc. Method of making and accessing split gate memory device
US6570213B1 (en) * 2002-02-08 2003-05-27 Silicon Based Technology Corp. Self-aligned split-gate flash memory cell and its contactless NOR-type memory array
US6828618B2 (en) * 2002-10-30 2004-12-07 Freescale Semiconductor, Inc. Split-gate thin-film storage NVM cell
US6706599B1 (en) 2003-03-20 2004-03-16 Motorola, Inc. Multi-bit non-volatile memory device and method therefor
US6939767B2 (en) * 2003-11-19 2005-09-06 Freescale Semiconductor, Inc. Multi-bit non-volatile integrated circuit memory and method therefor
US7301197B2 (en) * 2004-09-21 2007-11-27 Atmel Corporation Non-volatile nanocrystal memory transistors using low voltage impact ionization
US7119396B2 (en) * 2004-10-08 2006-10-10 Silicon Storage Technology, Inc. NROM device
US7060594B2 (en) * 2004-10-19 2006-06-13 Macronix International Co., Ltd. Memory device and method of manufacturing including deuterated oxynitride charge trapping structure
KR100632461B1 (ko) * 2005-02-03 2006-10-11 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
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Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
JP2000077632A (ja) * 1998-09-01 2000-03-14 Nec Corp フラッシュメモリ、その書き込み・消去方法、およびその製造方法
WO2003012878A1 (fr) * 2001-07-27 2003-02-13 Renesas Technology Corp. Dispositif semi-conducteur
JP2003218212A (ja) * 2002-01-25 2003-07-31 Hitachi Ltd 半導体装置
US20030218203A1 (en) * 2002-05-21 2003-11-27 Taiwan Semiconductor Manufacturing Company Split gate flash with strong source side injection and method of fabrication thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016524342A (ja) * 2013-07-05 2016-08-12 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 分割ゲート型不揮発性メモリセル用の自己整合ソースの形成
KR101923773B1 (ko) 2016-07-13 2018-11-29 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 디바이스 및 그 제조 방법

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Publication number Publication date
KR20090128413A (ko) 2009-12-15
EP2126977A4 (en) 2010-09-29
TW200901483A (en) 2009-01-01
US20080227254A1 (en) 2008-09-18
CN101647122A (zh) 2010-02-10
CN101647122B (zh) 2011-09-28
US8803217B2 (en) 2014-08-12
EP2126977A1 (en) 2009-12-02
TWI424571B (zh) 2014-01-21
WO2008112370A1 (en) 2008-09-18

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