JP2010515244A - 三次元集積回路を製造するための方法、装置、および、システム - Google Patents
三次元集積回路を製造するための方法、装置、および、システム Download PDFInfo
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Abstract
【解決手段】本発明は、三次元集積回路を製造するための方法、装置、および、システムに関する。本方法の一実施形態は、複数のスルーホールを有するウエハまたはその他の基板を提供する工程を含む。さらに、本方法は、処理チャンバ内に取り付けられたウエハまたはその他の基板用のホルダでウエハまたはその他の基板を支持する工程を備える。本方法は、ウエハまたはその他の基板がウエハまたはその他の基板用のホルダ上に支持されている間に、ウエハまたはその他の基板の前面とウエハまたはその他の基板の背面との間で圧力差を生じさせて、その圧力差により、スルーホールを通る流体の流れを引き起こす工程をさらに含む。また、本方法は、集積回路を製造するための少なくとも1つの処理について処理チャンバ内の処理条件を確立する工程を含む。本発明に従ったシステムの実施形態および装置の実施形態も開示されている。
【選択図】図1
Description
Claims (35)
- 三次元集積回路のためのウエハを処理するシステムであって、
大気圧未満の圧力下で前記ウエハを処理するよう構成された処理チャンバと、
前記処理チャンバ内に配置されたウエハホルダであって、半導体ウエハの背面と接触するための実質的な平面を提供するよう構成された実質的な剛体を備えると共に、前記平面と流体をやり取り可能に連通する流体流路を有する、ウエハホルダと、
前記流体流路と接続され、前記半導体ウエハの前面と背面の間に圧力差を生じさせるよう構成された真空ポンプと、
を備える、システム。 - 請求項1に記載のシステムであって、
前記ウエハホルダは、前記平面に前記ウエハを静電的に保持するよう構成されている、システム。 - 請求項1に記載のシステムであって、
前記ウエハホルダは、前記平面に前記ウエハを保持するためのクランプをさらに備える、システム。 - 請求項1に記載のシステムであって、
前記実質的な剛体は、前記ウエハの背面に接触する前記平面のために多孔質材料をさらに備える、システム。 - 請求項1に記載のシステムであって、
前記実質的な剛体は、空洞と、前記空洞内に配置された少なくとも1つの構造体と、を有し、
前記少なくとも1つの構造体は、前記平面を形成するように前記空洞の基部から伸びている、システム。 - 請求項1に記載のシステムであって、
前記ウエハは、少なくとも1つのホールを有し、
前記実質的な剛体は、空洞と、前記空洞内に配置された少なくとも1つの構造体と、を有し、
前記少なくとも1つの構造体は、前記平面を形成するように前記空洞の基部から伸びており、
前記少なくとも1つの構造体は、ウエハを通るガスの流れの抵抗を最小化するような形状を有する、システム。 - 請求項1に記載のシステムであって、
前記実質的な剛体は、空洞と、前記空洞内に配置された少なくとも1つの構造体と、を有し、
前記少なくとも1つの構造体は、前記平面を形成するように前記空洞の基部から伸びており、
前記少なくとも1つの構造体は、前記ウエハと接触するためのナイフエッジを有する、システム。 - 請求項1に記載のシステムであって、
前記ウエハは、前記ウエハの前面から前記ウエハの背面にガスが移動するよう構成された少なくとも1つのスルーホールを有し、
前記真空ポンプは、前記ガスの移動を促進するよう構成されている、システム。 - 請求項1に記載のシステムであって、前記ウエハホルダは、前記ウエハの背面外周において密閉を形成するための表面を備える、システム。
- 請求項1に記載のシステムであって、
前記ウエハホルダは、前記ウエハを支持するよう構成されたポンププレートを備え、
前記ポンププレートは、集積回路デバイスが形成される前記ウエハの領域を露出させるよう配置された少なくとも1つの穴を有する、システム。 - 請求項1に記載のシステムであって、
前記ウエハホルダは、前記ウエハを支持するよう構成されたポンププレートを備え、
前記ポンププレートは、集積回路デバイスが形成される前記ウエハの領域を露出させるよう配置された少なくとも1つの穴を有しており、前記ウエハホルダに対して着脱可能に取り付けられる、システム。 - 請求項1に記載のシステムであって、
前記ウエハホルダは、前記ウエハの背面外周において密閉を形成するための表面を備え、
前記実質的な剛体は、空洞と、前記空洞内に配置される少なくとも1つの構造体と、を有し、
前記少なくとも1つの構造体は、前記空洞の基部から前記平面に至るまで伸びている、システム。 - 請求項1に記載のシステムであって、
前記ウエハホルダは、前記ウエハの背面外周において密閉を形成するための表面を備え、
前記実質的な剛体は、空洞と、前記空洞内に配置される少なくとも1つの構造体と、を有し、
前記少なくとも1つの構造体は、前記空洞の基部から前記平面に至るまで伸びており、
前記少なくとも1つの構造体は、前記ウエハと接触するためのナイフエッジを有する、システム。 - 請求項1に記載のシステムであって、前記処理チャンバは、化学蒸着チャンバ、低圧化学蒸着チャンバ、プラズマ化学蒸着チャンバ、または、原子層堆積チャンバを含む、システム。
- 請求項1に記載のシステムであって、前記処理チャンバは、プラズマ処理チャンバを含む、システム。
- 三次元集積回路を製造する方法であって、
複数のスルーホールを有するウエハを提供する工程と、
処理チャンバ内に取り付けられたウエハホルダで前記ウエハを支持する工程と、
前記ウエハが前記ウエハホルダ上に支持されている間に、前記ウエハの前面と前記ウエハの背面との間で圧力差を生じさせて、前記圧力差により、前記スルーホールを通る流体の流れを引き起こす工程と、
集積回路を製造するための少なくとも1つの処理について前記処理チャンバ内の処理条件を確立する工程と、
を含む方法。 - 請求項16に記載の方法であって、前記スルーホールは、前記ウエハを貫通する座ぐり穴付ホールであり、大直径を有する前記座ぐり穴は前記ウエハの背面側にある、方法。
- 請求項16に記載の方法であって、前記ウエハホルダで前記ウエハを支持する工程は、前記ウエハホルダに前記ウエハを静電的に保持する工程を含む、方法。
- 請求項16に記載の方法であって、前記ウエハホルダで前記ウエハを支持する工程は、前記ウエハホルダに前記ウエハを機械的にクランプする工程を含む、方法。
- 請求項16に記載の方法であって、前記圧力差を生じさせる工程は、前記ウエハホルダを用いて前記ウエハの背面において減圧を引き起こす、方法。
- 請求項16に記載の方法であって、前記圧力差を生じさせる工程は、前記ウエハの背面外周における密閉の形成を含み、前記ウエハホルダを用いて前記ウエハの背面において減圧を引き起こす、方法。
- 請求項16に記載の方法であって、前記処理チャンバ内の処理条件を確立する工程は、大気圧未満の圧力の処理条件を含む、方法。
- 請求項16に記載の方法であって、前記処理チャンバ内の処理条件を確立する工程は、湿式化学処理条件または乾式化学処理条件を含む、方法。
- 請求項16に記載の方法であって、前記処理チャンバ内の処理条件を確立する工程は、堆積処理条件またはエッチング処理条件を含む、方法。
- 請求項16に記載の方法であって、前記処理チャンバ内の処理条件を確立する工程は、電気絶縁層を堆積するための処理条件を含む、方法。
- 請求項16に記載の方法であって、前記処理チャンバ内の処理条件を確立する工程は、導電層を堆積するための処理条件を含む、方法。
- 請求項16に記載の方法であって、前記処理チャンバ内の処理条件を確立する工程は、
化学蒸着、
低圧化学蒸着、または、
原子層堆積を実現するための処理条件を含む、方法。 - 請求項16に記載の方法であって、前記処理チャンバ内の処理条件を確立する工程は、無電解堆積または電気化学めっきを実現するための処理条件を含む、方法。
- 請求項16に記載の方法であって、前記処理チャンバ内の処理条件を確立する工程は、物理蒸着を実現するための処理条件を含む、方法。
- 請求項16に記載の方法であって、前記処理チャンバ内の処理条件を確立する工程は、銅を堆積するための処理条件を含む、方法。
- 請求項16に記載の方法であって、前記処理チャンバ内の処理条件を確立する工程は、タンタルまたは窒化タンタルを堆積するための処理条件を含む、方法。
- 請求項16に記載の方法であって、前記処理チャンバ内の処理条件を確立する工程は、二酸化ケイ素または低誘電体を堆積するための処理条件を含む、方法。
- 三次元集積回路を製造する処理を実行するための処理チャンバ内で半導体ウエハを支持するためのウエハホルダであって、
前記ウエハは、前記ウエハの背面から前記ウエハの前面に至る複数の座ぐり穴付スルーホールを有し、
前記ウエハホルダは、前記半導体ウエハの背面に接触するための実質的な平面を提供するよう構成された実質的な剛体を備え、
前記ウエハホルダは、前記平面と流体をやり取り可能に連通する流体流路を有し、
前記ウエハホルダは、前記流体流路を減圧状態として前記半導体ウエハの前面と背面との間に圧力差を生じさせるためのポンプと接続されるよう構成されており、
前記ウエハホルダは、前記ウエハホルダに前記ウエハを静電的にクランプするよう構成されており、
前記実質的な剛体は、空洞と、前記空洞内に配置され前記平面を形成するように前記空洞の基部から伸びる少なくとも1つの構造体と、を有し、
前記構造体は、前記ウエハを通るガスの流れの抵抗を最小化するように前記ウエハの背面に接触するためのナイフエッジを有し、
前記ウエハホルダは、前記ウエハの背面外周において密閉を形成するための表面を有する、ウエハホルダ。 - 三次元集積回路を製造する処理のためのウエハホルダであって、ウエハを静電的に保持するよう構成されると共に、前記処理中に、前記ウエハの前面と前記ウエハの背面との間で圧力差を生じさせるように、前記ウエハの背面に減圧状態を生じさせるよう構成されている、ウエハホルダ。
- 請求項16に記載の方法であって、前記スルーホールは、円錐形皿穴付スルーホール、変形された座ぐり穴付スルーホール、または、半球形座ぐり穴付スルーホールであり、前記スルーホールの大直径は前記ウエハの背面側にある、方法。
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