JP2010507252A - 基板処理構成部品からの残留物の除去 - Google Patents

基板処理構成部品からの残留物の除去 Download PDF

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Publication number
JP2010507252A
JP2010507252A JP2009533334A JP2009533334A JP2010507252A JP 2010507252 A JP2010507252 A JP 2010507252A JP 2009533334 A JP2009533334 A JP 2009533334A JP 2009533334 A JP2009533334 A JP 2009533334A JP 2010507252 A JP2010507252 A JP 2010507252A
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Japan
Prior art keywords
residue
substrate processing
component
processing component
adhesive
Prior art date
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Pending
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JP2009533334A
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English (en)
Japanese (ja)
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JP2010507252A5 (zh
Inventor
ブライアン， ティー． ウェスト，
カール ブルックナー，
シュン ウー，
ロバート ヘイニー，
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Applied Materials Inc
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Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2010507252A publication Critical patent/JP2010507252A/ja
Publication of JP2010507252A5 publication Critical patent/JP2010507252A5/ja
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00—Cleaning by methods involving the use of tools
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
JP2009533334A 2006-10-19 2007-10-15 基板処理構成部品からの残留物の除去 Pending JP2010507252A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/551,114 US20080092806A1 (en) 2006-10-19 2006-10-19 Removing residues from substrate processing components
PCT/US2007/022005 WO2008051393A2 (en) 2006-10-19 2007-10-15 Removing residues from substrate processing components

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012124612A Division JP2012216849A (ja) 2006-10-19 2012-05-31 基板処理構成部品からの残留物の除去

Publications (2)

Publication Number Publication Date
JP2010507252A true JP2010507252A (ja) 2010-03-04
JP2010507252A5 JP2010507252A5 (zh) 2010-12-02

Family

ID=39217999

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2009533334A Pending JP2010507252A (ja) 2006-10-19 2007-10-15 基板処理構成部品からの残留物の除去
JP2012124612A Pending JP2012216849A (ja) 2006-10-19 2012-05-31 基板処理構成部品からの残留物の除去
JP2013255612A Active JP6261974B2 (ja) 2006-10-19 2013-12-11 基板処理構成部品からの残留物の除去

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2012124612A Pending JP2012216849A (ja) 2006-10-19 2012-05-31 基板処理構成部品からの残留物の除去
JP2013255612A Active JP6261974B2 (ja) 2006-10-19 2013-12-11 基板処理構成部品からの残留物の除去

Country Status (5)

Country Link
US (3) US20080092806A1 (zh)
JP (3) JP2010507252A (zh)
CN (2) CN102626698B (zh)
TW (1) TWI395263B (zh)
WO (1) WO2008051393A2 (zh)

Cited By (3)

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JP2014095140A (ja) * 2012-11-12 2014-05-22 Toray Eng Co Ltd 薄膜形成装置
JP2014513868A (ja) * 2011-03-14 2014-06-05 プラズマ − サーム、エルエルシー 半導体ウェーハをプラズマ・ダイシングする方法及び装置
WO2014104218A1 (ja) * 2012-12-28 2014-07-03 花王株式会社 電子部品が接合した回路基板の製造方法

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JP6261974B2 (ja) 2018-01-17
TWI395263B (zh) 2013-05-01

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